专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07758979B2 Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film 有权
标题翻译：压电薄膜，压电材料以及压电薄膜和压电材料的制造方法以及压电谐振器，致动器元件和使用压电薄膜的物理传感器
公开(公告)号：US07758979B2
公开(公告)日：2010-07-20
申请号：US12155015
申请日：2008-05-29
申请人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
发明人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
IPC分类号： B32B9/00
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2201/032 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/187 , H01L41/316 , H03H9/02015 , H03H9/02574 , H03H9/173
摘要： A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.
摘要翻译：本发明的压电薄膜包括含有钪的氮化铝薄膜。假设钪原子的总数和铝原子数为100原子％，则氮化铝薄膜中的钪的含有比例为0.5原子％〜50原子％。根据该结构，本发明的压电薄膜能够在保持氮化铝薄膜的弹性波传播速度，Q值和频率 - 温度系数的特性的同时提高压电响应。

12. 发明授权

US07508120B2 Piezoelectric element and method for manufacturing 失效
标题翻译：压电元件及其制造方法
公开(公告)号：US07508120B2
公开(公告)日：2009-03-24
申请号：US10543119
申请日：2004-01-21
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
IPC分类号： H01L41/09
CPC分类号： H01L41/316
摘要： A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film.A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.
摘要翻译：在石英玻璃基板或不锈钢基板上形成下电极。通过溅射工艺，在下基板上形成氮化铝和/或氧化锌薄膜，使得偶极取向度达到55％以上，从而形成压电薄膜。并且在压电薄膜上形成上电极。压电装置具有由氮化铝和/或氧化锌制成的压电层。具有晶体结构的氮化铝和氧化锌具有先天的压电特性，因为它们的晶体结构不对称，它们不像铁电体那样具有居里温度，并且在氮化铝和氧化锌中，即使在高温下也不会发生磁转变，因此在晶体熔化或升华之前，它们不会失去压电特性。

13. 发明申请

US20090036779A1 ULTRASOUND DIAGNOSTIC APPARATUS 失效
标题翻译：超声诊断装置
公开(公告)号：US20090036779A1
公开(公告)日：2009-02-05
申请号：US12161921
申请日：2007-01-23
申请人： Osamu Fukuda , Naohiro Ueno , Masayoshi Tsubai , Morito Akiyama
发明人： Osamu Fukuda , Naohiro Ueno , Masayoshi Tsubai , Morito Akiyama
IPC分类号： A61B8/14
CPC分类号： A61B8/14 , A61B8/4281 , A61B8/485 , A61B2562/0247 , A61B2562/046 , B06B1/0629 , G01S15/899
摘要： Pressure distribution on a surface of an ultrasonic probe can be measured directly. Piezoelectric sensors, in which a piezoelectric thin film is formed on a film-like substrate, are arranged in the form of an array on the surface of an ultrasonic probe, and a sensor output signal processing unit outputs pressure measured for each piezoelectric sensor S1, S2 to S9 based on output signals from each of the piezoelectric sensors to an image processing unit. The image processing unit generates a histogram of the measured pressures for piezoelectric sensors S1, S2 to S9, and displays the histogram, while plotting the piezoelectric sensors on the x axis and the measured pressures on the Y axis, along with the resulting ultrasound tomographic image, on a monitor.
摘要翻译：可以直接测量超声波探头表面的压力分布。在薄膜状基板上形成有压电薄膜的压电传感器以超声波探头的表面排列成阵列状，并且传感器输出信号处理单元输出针对每个压电传感器S1测量的压力， S2至S9，其基于从每个压电传感器到图像处理单元的输出信号。图像处理单元生成压电传感器S1，S2至S9的测量压力的直方图，并显示直方图，同时将压电传感器绘制在x轴上，测量的Y轴上的压力连同所得到的超声断层图像在监视器上。

14. 发明申请

US20080296529A1 Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film 有权
标题翻译：压电薄膜，压电材料以及压电薄膜和压电材料的制造方法以及压电谐振器，致动器元件和使用压电薄膜的物理传感器
公开(公告)号：US20080296529A1
公开(公告)日：2008-12-04
申请号：US12155015
申请日：2008-05-29
申请人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
发明人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
IPC分类号： H01L41/187 , B05D5/12
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2201/032 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/187 , H01L41/316 , H03H9/02015 , H03H9/02574 , H03H9/173
摘要： A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.
摘要翻译：本发明的压电薄膜包括含有钪的氮化铝薄膜。假设钪原子的总数和铝原子数为100原子％，则氮化铝薄膜中的钪的含有比例为0.5原子％〜50原子％。根据该结构，本发明的压电薄膜能够在保持氮化铝薄膜的弹性波传播速度，Q值和频率 - 温度系数的特性的同时提高压电响应。

15. 发明申请

US20060131680A1 Piezoelectric element and method for manufacturing 失效
公开(公告)号：US20060131680A1
公开(公告)日：2006-06-22
申请号：US10543119
申请日：2004-01-21
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Noriyuki Kuwano
IPC分类号： H01L29/84
CPC分类号： H01L41/316
摘要： A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

16. 发明授权

US06823739B2 Thin pressure sensor and biological information measuring device using same, and biological information measuring method 失效
标题翻译：薄压力传感器和使用其的生物信息测量装置，以及生物信息测量方法
公开(公告)号：US06823739B2
公开(公告)日：2004-11-30
申请号：US10317161
申请日：2002-12-12
申请人： Naohiro Ueno , Morito Akiyama , Kiichi Ikeda , Hiroshi Tateyama
发明人： Naohiro Ueno , Morito Akiyama , Kiichi Ikeda , Hiroshi Tateyama
IPC分类号： G01L900
CPC分类号： A61B5/6892 , A61B5/021 , A61B5/1126 , A61B2562/0247 , G01L9/008
摘要： A thin pressure sensor includes: a pair of external electrodes, which are respectively made of conductive thin films that are respectively provided with piezoelectric layers on inner sides; and a single internal electrode, made of a conductive thin film, which is sealed between the pair of external electrodes, one of the pair of external electrodes having a conducting window that conducts to said internal electrode. The thin pressure sensor has a simple and thin structure with sufficient durability and mechanical strength.
摘要翻译：薄压力传感器包括：一对外部电极，其分别由内侧上分别设置有压电层的导电薄膜制成; 以及密封在一对外部电极之间的由导电薄膜制成的单个内部电极，所述一对外部电极中的一个具有导通到所述内部电极的导电窗口。薄压力传感器具有简单而薄的结构，具有足够的耐久性和机械强度。

17. 发明授权

US09246461B2 Manufacturing method of piezoelectric-body film, and piezoelectric-body film manufactured by the manufacturing method 有权
标题翻译：压电体膜的制造方法以及由该制造方法制造的压电体膜
公开(公告)号：US09246461B2
公开(公告)日：2016-01-26
申请号：US13380995
申请日：2010-06-30
申请人： Morito Akiyama , Kazuhiko Kano , Akihiko Teshigahara
发明人： Morito Akiyama , Kazuhiko Kano , Akihiko Teshigahara
IPC分类号： C23C14/00 , H03H3/02 , C23C14/06
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/0617 , C23C14/0641 , H01L41/316 , Y10T428/24355
摘要： A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.
摘要翻译：一种制造包括在基板上含有钪的氮化铝薄膜的压电薄膜的方法，所述方法包括：在至少含有氮气的气氛下溅射铝和钪的溅射步骤。在根据本发明的方法的溅射步骤中，当基板的温度在5℃至450℃的范围内时，钪含量率在0.5原子％至50原子的范围内在溅射步骤期间。

18. 发明申请

US20120000766A1 METHOD FOR MANUFACTURING SCANDIUM ALUMINUM NITRIDE FILM 审中-公开
标题翻译：制造氮化铝薄膜的方法
公开(公告)号：US20120000766A1
公开(公告)日：2012-01-05
申请号：US13171806
申请日：2011-06-29
申请人： Akihiko Teshigahara , Kazuhiko Kano , Morito Akiyama , Tatsuo Tabaru , Keiko Nishikubo
发明人： Akihiko Teshigahara , Kazuhiko Kano , Morito Akiyama , Tatsuo Tabaru , Keiko Nishikubo
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/3414
摘要： A method for manufacturing a scandium aluminum nitride film includes: sputtering a scandium aluminum alloy target under atmosphere including nitrogen gas so that a thin film is deposited on a substrate. Since the scandium aluminum nitride film is manufactured with using one alloy target, a composition of the film is maintained even when the sputtering time is long. Further, the above method is capable of being performed by a mass production sputtering apparatus.
摘要翻译：制造氮化钪膜的方法包括：在包括氮气的气氛下溅射钪铝合金靶，使得在基板上沉积薄膜。由于使用一种合金靶来制造氮化钪膜，所以即使在溅射时间长的情况下也能够保持膜的组成。此外，上述方法能够通过大规模生产溅射装置进行。

19. 发明授权

US07642693B2 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods 有权
标题翻译：纤锌矿薄膜，含纤锌矿结晶层的层压板及其制造方法
公开(公告)号：US07642693B2
公开(公告)日：2010-01-05
申请号：US10556663
申请日：2004-05-14
申请人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
发明人： Morito Akiyama , Naohiro Ueno , Hiroshi Tateyama , Toshihiro Kamohara
IPC分类号： H01L41/083
CPC分类号： H01L41/316 , C23C14/06 , C30B23/00 , C30B29/403 , C30B29/406 , H01L41/257
摘要： A thin film made of a wurtzite structure compound is manufactured by a reactive sputtering using a metal material as a target, and a nitrogen gas or oxygen gas as a reactive gas. By optimizing film-forming conditions when manufacturing the film, it is possible to obtain a wurtzite thin film whose polarization directions of crystal grains are aligned in a uniform direction. There is provided a laminate including a first wurtzite crystalline layer made of a wurtzite crystalline structure compound is formed in advance between a substrate and a functional material layer that is a ground. Thus it is possible to improve the crystallinity and crystalline orientation of a second wurtzite crystalline layer on the functional material layer.
摘要翻译：通过使用金属材料作为靶的反应性溅射和作为反应气体的氮气或氧气制造由纤锌矿结构化合物制成的薄膜。通过在制造膜时优化成膜条件，可以获得其晶粒的极化方向在均匀方向上排列的纤锌矿薄膜。提供了一种层压体，其包括在基体和作为地面的功能材料层之间预先形成由纤锌矿结晶化合物制成的第一纤锌矿结晶层。因此，可以提高功能材料层上的第二纤锌矿结晶层的结晶度和结晶取向性。

20. 发明申请

US20050247912A1 Mechanoluminescence material and process for producing the same 失效
标题翻译：机械发光材料及其制造方法
公开(公告)号：US20050247912A1
公开(公告)日：2005-11-10
申请号：US10519937
申请日：2003-07-24
申请人： Morito Akiyama , Chao-Nan Xu , Kazuhiro Nonaka
发明人： Morito Akiyama , Chao-Nan Xu , Kazuhiro Nonaka
IPC分类号： C09K11/64 , C09K11/08 , C09K11/77 , C09K11/80
CPC分类号： C09K11/7734 , C09K11/7792 , F21K2/04
摘要： A mechanoluminescence material comprising a matrix of composite metal oxide containing strontium and aluminum, represented by the general formula SrM1Al6O11 (wherein M1 is an alkaline earth metal) or SrM2Al3O7 (wherein M2 is a rare earth metal), and further comprising, as luminescence centers, a metal selected from among rare earth metals and transition metals capable of emitting light when a carrier having been excited by mechanical energy returns to its ground state.
摘要翻译：一种机械发光材料，其包含由通式SrM 1 Al 6 O 11表示的含有锶和铝的复合金属氧化物的基质（其中M 1是一种碱土金属）或SrM 2 O 3 N 7 O 7（其中M < / SUP>是稀土金属），并且还包含作为发光中心的金属，当通过机械能激发的载体返回到其基态时，能够发光的稀土金属和过渡金属中的金属。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式