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11. 发明申请

US20060073283A1 Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于金属等离子体气相沉积和重新溅射的装置，其具有通过工件施加的源极和偏置功率频率
公开(公告)号：US20060073283A1
公开(公告)日：2006-04-06
申请号：US11052011
申请日：2005-02-03
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： B01J19/08
CPC分类号： H01J37/3405 , C23C14/046 , C23C14/352 , H01J37/32082
摘要： A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：等离子体反应器包括真空室，该真空室包括侧壁，天花板和在室底部附近的晶片支撑基座，以及耦合到该室的真空泵。工艺气体入口连接到腔室和连接到工艺气体入口的工艺气体源。反应器还包括在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座并具有适于激发动电子的频率的RF等离子体源功率发生器，以及RF等离子体偏置发电机耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

12. 发明申请

US20060172517A1 Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
标题翻译：用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率
公开(公告)号：US20060172517A1
公开(公告)日：2006-08-03
申请号：US11222230
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/20
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
摘要翻译：在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

13. 发明申请

US20060169584A1 Physical vapor deposition plasma reactor with RF source power applied to the target 审中-公开
标题翻译：具有RF源功率的物理气相沉积等离子体反应器施加到目标
公开(公告)号：US20060169584A1
公开(公告)日：2006-08-03
申请号：US11222245
申请日：2005-09-07
申请人： Karl Brown , John Pipitone , Vineet Mehta
发明人： Karl Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet. A metal sputter target is located at the ceiling and a high voltage D.C. source coupled to the sputter target. An RF plasma source power generator is coupled to the metal sputter target and has a frequency suitable for exciting kinetic electrons. Preferably, the wafer support pedestal comprises an electrostatic chuck and an RF plasma bias power generator is coupled to the wafer support pedestal having a frequency suitable for coupling energy to plasma ions. Preferably, a solid metal RF feed rod having a diameter in excess of about 0.5 inches engages the metal sputter target, the RF feed rod extending axially above the target through the ceiling and being coupled to the RF plasma source power generator.
摘要翻译：物理气相沉积反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑台座，耦合到该室的真空泵，耦合到该室的工艺气体入口以及耦合到工艺气体入口。金属溅射靶位于天花板和耦合到溅射靶的高电压源极。 RF等离子体源功率发生器耦合到金属溅射靶并且具有适于激发动电子的频率。优选地，晶片支撑基座包括静电卡盘，并且RF等离子体偏置功率发生器耦合到具有适于将能量耦合到等离子体离子的频率的晶片支撑基座。优选地，具有超过约0.5英寸的直径的固体金属RF馈送棒与金属溅射靶接合，RF馈送杆通过天花板轴向延伸到目标上方并且耦合到RF等离子体源发电机。

14. 发明授权

US07268076B2 Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于通过工件施加的源极和偏置功率频率的金属等离子体气相沉积和再溅射的装置和方法
公开(公告)号：US07268076B2
公开(公告)日：2007-09-11
申请号：US11052012
申请日：2005-02-03
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , C23C14/345 , C23C14/354 , H01J37/32706 , H01J37/3408 , H01L21/76843 , H01L21/76844 , H01L21/76865
摘要： Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。将工艺气体引入所述真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

15. 发明授权

US08512526B2 Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron 有权
标题翻译：使用磁控管施加到靶的RF等离子体源功率进行物理气相沉积的方法
公开(公告)号：US08512526B2
公开(公告)日：2013-08-20
申请号：US11222248
申请日：2005-09-07
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , H01B11/02 , H01B11/06 , H02G3/04 , H05K1/09
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.
摘要翻译：等离子体增强的物理气相沉积方法，其中除了还施加到目标的DC电压之外，VHF功率被施加到溅射靶，VHF功率电平为3.5kW或更大，使得DC目标功率可以是降低到小于500W，同时仍然获得非常高的离子分数（超过50％），允许非常小的工件到目标间距不超过工件直径的分数（7/30），以增强离子化分数在整个过程区域。

16. 发明授权

US07214619B2 Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece 有权
标题翻译：在等离子体中的集成电路中形成阻挡层的方法，其中源极和偏置功率频率通过工件施加
公开(公告)号：US07214619B2
公开(公告)日：2007-05-08
申请号：US11052010
申请日：2005-02-03
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/35 , C23C14/351 , H01J37/32706 , H01L21/2855 , H01L21/76844 , H01L21/76862 , H01L21/76865
摘要： A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.
摘要翻译：在集成电路中通过在室的顶部附近提供金属靶并且在室的底部附近面向靶的晶片支撑台座，在集成电路中形成阻挡层。将工艺气体引入真空室。目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

17. 发明授权

US07399943B2 Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于金属等离子体气相沉积和重新溅射的装置，其具有通过工件施加的源极和偏置功率频率
公开(公告)号：US07399943B2
公开(公告)日：2008-07-15
申请号：US11052011
申请日：2005-02-03
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： B23K10/00
CPC分类号： H01J37/3405 , C23C14/046 , C23C14/352 , H01J37/32082
摘要： A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：等离子体反应器包括真空室，该真空室包括侧壁，天花板和在室底部附近的晶片支撑基座，以及耦合到该室的真空泵。工艺气体入口连接到腔室和连接到工艺气体入口的工艺气体源。反应器还包括在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座并具有适于激发动电子的频率的RF等离子体源功率发生器，以及RF等离子体偏置发电机耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

18. 发明授权

US08562798B2 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron 有权
标题翻译：具有RF源功率的物理气相沉积等离子体反应器施加到靶并具有磁控管
公开(公告)号：US08562798B2
公开(公告)日：2013-10-22
申请号：US11222231
申请日：2005-09-07
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , H01B11/02 , H01B11/06 , H02G3/04 , H05K1/09
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
摘要翻译：物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

19. 发明授权

US08062484B2 Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target 有权
标题翻译：用于等离子体增强物理气相沉积的方法，其具有施加到目标的RF源功率
公开(公告)号：US08062484B2
公开(公告)日：2011-11-22
申请号：US11222230
申请日：2005-09-07
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/046 , C23C14/345 , C23C14/358 , H01J37/32082 , H01J37/32706 , H01L21/2855 , H01L21/76843 , H01L21/76844
摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
摘要翻译：在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

20. 发明申请

US20120028461A1 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：US20120028461A1
公开(公告)日：2012-02-02
申请号：US13178870
申请日：2011-07-08
申请人： Alan Ritchie , Karl Brown , John Pipitone
发明人： Alan Ritchie , Karl Brown , John Pipitone
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/34 , C23C14/345 , C23C14/3492 , C23C14/354 , C23C16/503 , C23C16/52 , C23C16/56 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76865 , H01L21/76873
摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
摘要翻译：本文提供了在基板上形成的高纵横比特征中沉积金属的方法。在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些，以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

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