专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08882916B2 Film deposition apparatus, film deposition method, and computer readable storage medium 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US08882916B2
公开(公告)日：2014-11-11
申请号：US13070844
申请日：2011-03-24
申请人： Takeshi Kumagai , Hitoshi Kato
发明人： Takeshi Kumagai , Hitoshi Kato
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/45536 , C23C16/45551 , C23C16/45557 , C23C16/4584
摘要： In an disclosed film deposition method, after a film deposition-alteration step is carried out that includes a film deposition process where a Si containing gas is adsorbed on a wafer W and the adsorbed Si containing gas on the wafer is oxidized by supplying an O3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layers) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the Si containing gas is not supplied.
摘要翻译：在所公开的膜沉积方法中，在进行膜沉积改变步骤之后，其中包括在晶片W上吸附含Si气体的膜沉积工艺，并且通过提供O 3气体来氧化晶片上吸附的含Si气体到晶片的上表面，从而通过旋转其上放置晶片的转台和氧化硅层的改变工艺）通过等离子体改变来制造氧化硅层，其中氧化硅在不提供含Si气体的情况下，层被等离子体改变。

12. 发明申请

US20100189129A1 BANDWIDTH CONTROL APPARATUS 有权
标题翻译：带宽控制装置
公开(公告)号：US20100189129A1
公开(公告)日：2010-07-29
申请号：US12625595
申请日：2009-11-25
申请人： Hideki Hinosugi , Atsushi Anzai , Takeshi Kumagai
发明人： Hideki Hinosugi , Atsushi Anzai , Takeshi Kumagai
IPC分类号： H04J3/22
CPC分类号： H04L47/10 , H04L47/20 , H04L47/2475 , H04L47/28 , H04L47/32
摘要： A bandwidth calculation section calculates a usable bandwidth from a communication amount of each user or a session connection time stored in a statistic management memory and minimum bandwidth information and maximum bandwidth information recorded in a bandwidth setting memory. The bandwidth calculation section allocates a large usable bandwidth to a user with a small communication amount or a short session connection time. A transmission control section performs transmission scheduling of packet information stored in a packet buffer based on a transmission scheduled time calculated from the usable bandwidth stored in a transmission scheduled time memory.
摘要翻译：带宽计算部分根据存储在统计管理存储器中的每个用户的通信量或会话连接时间来计算可用带宽，以及记录在带宽设置存储器中的最小带宽信息和最大带宽信息。带宽计算部分向具有小通信量或短会话连接时间的用户分配大的可用带宽。传输控制部分根据从发送调度时间存储器中存储的可用带宽计算的传输调度时间，对存储在分组缓冲器中的分组信息执行传输调度。

13. 发明授权

US4742408A Drive pin holding spring for floppy disk drive 失效
标题翻译：驱动器针固定弹簧用于软盘驱动器
公开(公告)号：US4742408A
公开(公告)日：1988-05-03
申请号：US870020
申请日：1986-06-03
申请人： Takeshi Kumagai
发明人： Takeshi Kumagai
IPC分类号： G11B17/028 , G11B5/012
CPC分类号： G11B17/0282
摘要： A floppy disk drive including a disk drive motor having an output shaft, a turntable secured to the output shaft of the motor and having a hole, a spring member attached to the bottom of the turntable, and a disk drive pin provided on the spring member for transmitting the rotation of the motor to a floppy disk on the turntable and having an upper end projecting above the top of the turntable through its hole for engaging the floppy disk. The spring member has a portion to which the drive pin is attached, and which allows the drive pin to incline both radially and circumferentially of a hub on the floppy disk when the hub acts on the drive pin.
摘要翻译：一种软盘驱动器，包括具有输出轴的盘驱动马达，固定在马达的输出轴上并具有孔的转台，附接到转盘底部的弹簧件，以及设置在弹簧件上的盘驱动销用于将电动机的旋转传递到转盘上的软盘，并且其上端通过其孔用于接合软盘而突出在转盘的顶部上方。弹簧构件具有驱动销附接的部分，并且当毂作用在驱动销上时，允许驱动销在软盘上的轮毂的径向和周向两侧倾斜。

14. 发明授权

US07125812B2 CVD method and device for forming silicon-containing insulation film 有权
标题翻译： CVD方法和用于形成含硅绝缘膜的装置
公开(公告)号：US07125812B2
公开(公告)日：2006-10-24
申请号：US10500150
申请日：2003-01-14
申请人： Takeshi Kumagai , Hitoshi Katoh , Jinsu Lee , Shingo Maku
发明人： Takeshi Kumagai , Hitoshi Katoh , Jinsu Lee , Shingo Maku
IPC分类号： H01L21/31
CPC分类号： C23C16/45561 , C23C16/308 , C23C16/345 , C23C16/40 , C23C16/401 , C23C16/452
摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.
摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路（46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。

15. 发明申请

US20050081789A1 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method 有权
标题翻译：氮化硅膜形成方法，氮化硅膜形成系统和氮化硅膜形成系统预清洗方法
公开(公告)号：US20050081789A1
公开(公告)日：2005-04-21
申请号：US10986282
申请日：2004-11-12
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , C23C16/00
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译：热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。

16. 发明授权

US5162983A Active filter device for suppressing harmonics in a system including a capacitive load 失效
标题翻译：用于在包括电容负载的系统中抑制谐波的主动滤波器装置
公开(公告)号：US5162983A
公开(公告)日：1992-11-10
申请号：US727602
申请日：1991-07-09
申请人： Takeshi Kumagai
发明人： Takeshi Kumagai
IPC分类号： H02J3/01
CPC分类号： H02J3/01 , Y02E40/40
摘要： An active filter suppresses harmonic current components flowing through a power supply, to which a compensation object load including a harmonic component source and a capacitive load is coupled. The active filter supplies a compensation current Ic in accordance with an output of a subtracter coupled to current transformers for detecting the load current I1 and the capacitive load current If, respectively. Thus, the compensation current Ic supplied from the active filter corresponds to and compensates only for the harmonic current components generated by the harmonic component source. The capacitive load current If is excluded from control operation. Thus, the positive feedback of the system is avoided, and stable control operation can be obtained.
摘要翻译：有源滤波器抑制流过电源的谐波电流分量，包括谐波分量源和容性负载的补偿对象负载耦合到该电源。有源滤波器根据耦合到电流互感器的减法器的输出分别提供补偿电流Ic，用于检测负载电流I1和容性负载电流If。因此，从有源滤波器提供的补偿电流Ic对应于并补偿由谐波分量源产生的谐波电流分量。电容负载电流If被排除在控制操作之外。因此，避免了系统的正反馈，可以获得稳定的控制操作。

17. 发明授权

US4831474A Disk supporting mechanism in disk driving device 失效
标题翻译：磁盘驱动装置中的磁盘支持机构
公开(公告)号：US4831474A
公开(公告)日：1989-05-16
申请号：US111460
申请日：1987-10-20
申请人： Takeshi Kumagai
发明人： Takeshi Kumagai
IPC分类号： G11B17/028 , G11B19/20
CPC分类号： G11B17/0282 , G11B19/2009
摘要： A disk driving apparatus is disclosed which, in such apparatus constituted of a disk holding portion on which a hub disposed in the center of a disk is loaded and a motor for supplying the disk holding portion with rotational power, comprises within the disk holding portion two members, a guide cap and a housing, externally attached to the outer rings of bearings fitted to the shaft of the motor. The guide cap is provided thereon with a centering peripheral surface with which the center hole of the hub is engaged and the housing is provided with portions for positioning parts which are attached thereto in the direction of the shaft of the disk.
摘要翻译：公开了一种盘驱动装置，在其中装载有设置在盘中心的轮毂的盘保持部和用于向盘保持部提供旋转动力的马达构成的装置中，包括在盘保持部2内构件，导向盖和壳体，外部附接到安装到电动机的轴的轴承的外圈。导向盖设置有定心圆周表面，毂的中心孔与该中心圆周表面接合，并且壳体设置有用于沿着盘的轴的方向附着到其上的定位部件的部分。

18. 发明授权

US08906246B2 Film deposition apparatus and film deposition method 有权
标题翻译：薄膜沉积装置和薄膜沉积方法
公开(公告)号：US08906246B2
公开(公告)日：2014-12-09
申请号：US13430871
申请日：2012-03-27
申请人： Hitoshi Kato , Takeshi Kumagai
发明人： Hitoshi Kato , Takeshi Kumagai
IPC分类号： C23C16/56 , H01L21/02 , C23C16/04 , C23C16/40 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/402 , C23C16/45534 , C23C16/4554 , C23C16/45551 , H01L21/02164 , H01L21/0234
摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.
摘要翻译：膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

19. 发明授权

US08642487B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US08642487B2
公开(公告)日：2014-02-04
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

20. 发明申请

US20120267341A1 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD 有权
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：US20120267341A1
公开(公告)日：2012-10-25
申请号：US13430871
申请日：2012-03-27
申请人： Hitoshi KATO , Takeshi Kumagai
发明人： Hitoshi KATO , Takeshi Kumagai
IPC分类号： C23C16/56
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/402 , C23C16/45534 , C23C16/4554 , C23C16/45551 , H01L21/02164 , H01L21/0234
摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.
摘要翻译：膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式