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11. 发明申请

US20110212571A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20110212571A1
公开(公告)日：2011-09-01
申请号：US13104551
申请日：2011-05-10
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Jun KOYAMA
IPC分类号： H01L21/363
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/66969 , H01L29/78696
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

12. 发明申请

US20120319108A1 TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE 有权
标题翻译：晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法
公开(公告)号：US20120319108A1
公开(公告)日：2012-12-20
申请号：US13602393
申请日：2012-09-04
申请人： Junichiro SAKATA , Hiromichi GODO , Takashi SHIMAZU
发明人： Junichiro SAKATA , Hiromichi GODO , Takashi SHIMAZU
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78669 , H01L29/78696
摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.
摘要翻译：为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层，不提供硅层。

13. 发明申请

US20120300151A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120300151A1
公开(公告)日：2012-11-29
申请号：US13567327
申请日：2012-08-06
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
IPC分类号： H01L27/15 , G02F1/136
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

14. 发明申请

US20120286256A1 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC APPLIANCE 有权
标题翻译：发光元件，发光装置和电子设备
公开(公告)号：US20120286256A1
公开(公告)日：2012-11-15
申请号：US13552899
申请日：2012-07-19
申请人： Yuji IWAKI , Junichiro SAKATA , Hisao IKEDA , Tomoya AOYAMA , Takaaki NAGATA , Takahiro KAWAKAMI , Satoshi SEO , Ryoji NOMURA
发明人： Yuji IWAKI , Junichiro SAKATA , Hisao IKEDA , Tomoya AOYAMA , Takaaki NAGATA , Takahiro KAWAKAMI , Satoshi SEO , Ryoji NOMURA
IPC分类号： H01L51/54
CPC分类号： H01L51/5048 , H01L51/0059 , H01L51/0062 , H01L51/0072 , H01L51/0081
摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.
摘要翻译：本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。另一个目的是通过使用发光元件来提供具有低功耗的发光装置。另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

15. 发明申请

US20120280225A1 SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，存储器件及制造半导体器件的方法
公开(公告)号：US20120280225A1
公开(公告)日：2012-11-08
申请号：US13455476
申请日：2012-04-25
申请人： Junichiro SAKATA
发明人： Junichiro SAKATA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1156 , H01L28/40
摘要： An oxide semiconductor is used for a semiconductor layer of a transistor included in a semiconductor device, whereby leakage current between a source and a drain can be reduced, so that reduction in power consumption of a semiconductor device and a memory device including the semiconductor device and an improvement in characteristics of retaining stored data (electric charge) in the semiconductor device and the memory device can be achieved. Further, a drain electrode of the transistor, the semiconductor layer, and a first electrode which overlaps with the drain electrode form a capacitor, and a gate electrode is led to an overlying layer at a position which overlaps with the capacitor. Thus, the semiconductor device and the memory device including the semiconductor device can be miniaturized.
摘要翻译：氧化物半导体被用于半导体器件中包括的晶体管的半导体层，由此可以减小源极与漏极之间的漏电流，从而降低半导体器件和包括半导体器件和存储器件的存储器件的功耗可以实现在半导体器件和存储器件中保持存储数据（电荷）的特性的改进。此外，晶体管的漏电极，半导体层和与漏电极重叠的第一电极形成电容器，并且在与电容器重叠的位置处将栅电极引导到上覆层。因此，可以使包括半导体器件的半导体器件和存储器件小型化。

16. 发明申请

US20120256179A1 TRANSISTOR AND DISPLAY DEVICE 审中-公开
标题翻译：晶体管和显示器件
公开(公告)号：US20120256179A1
公开(公告)日：2012-10-11
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

17. 发明申请

US20120241812A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120241812A1
公开(公告)日：2012-09-27
申请号：US13478547
申请日：2012-05-23
申请人： Hisao IKEDA , Junichiro SAKATA
发明人： Hisao IKEDA , Junichiro SAKATA
IPC分类号： H01L33/40
CPC分类号： H01L51/5088 , H01L51/5048
摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.
摘要翻译：公开了一种可以在低驱动电压下驱动并且比常规发光元件具有更长寿命的发光元件，并且公开了一种用于制造发光元件的方法。所公开的发光元件包括一对电极之间的多个层; 并且所述多个层中的至少一层包含选自氧化物半导体和金属氧化物的一种化合物和具有高空穴传输性的化合物。这样的发光元件可以抑制含有选自氧化物半导体和金属氧化物的一种化合物的层和具有高空穴传输性的化合物的层的结晶。结果，可以延长发光元件的寿命。

18. 发明申请

US20110210355A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110210355A1
公开(公告)日：2011-09-01
申请号：US12871176
申请日：2010-08-30
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masayuki SAKAKURA , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/322 , H01L27/3244 , H01L27/3262 , H01L29/247 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/52 , H01L2227/323
摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
摘要翻译：目的在于提高发光装置的可靠性。发光装置具有包括用于驱动电路的晶体管和包括用于一个衬底上的像素的晶体管的像素部分的驱动器电路部分。用于驱动电路的晶体管和用于像素的晶体管是反向交错晶体管，每个晶体管包括与氧化物绝缘层的一部分接触的氧化物半导体层。在像素部分中，在氧化物绝缘层上设置滤色器层和发光元件。在用于驱动电路的晶体管中，在氧化物绝缘层上设置与栅电极层和氧化物半导体层重叠的导电层。使用金属导电膜形成栅极电极层，源极电极层和漏极电极层。

19. 发明申请

US20110121289A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20110121289A1
公开(公告)日：2011-05-26
申请号：US12950186
申请日：2010-11-19
申请人： Akiharu MIYANAGA , Junichiro SAKATA , Masayuki SAKAKURA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Shunpei YAMAZAKI
发明人： Akiharu MIYANAGA , Junichiro SAKATA , Masayuki SAKAKURA , Masahiro TAKAHASHI , Hideyuki KISHIDA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/10 , H01L29/41733
摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
摘要翻译：提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜，以及设置在金属氧化物膜上的金属膜。氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

20. 发明申请

US20110108864A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110108864A1
公开(公告)日：2011-05-12
申请号：US13009111
申请日：2011-01-19
申请人： Satoshi SEO , Daisuke KUMAKI , Hisao IKEDA , Junichiro SAKATA
发明人： Satoshi SEO , Daisuke KUMAKI , Hisao IKEDA , Junichiro SAKATA
IPC分类号： H01L27/15
CPC分类号： H01L27/156 , H01L27/322 , H01L27/3244 , H01L51/0059 , H01L51/0071 , H01L51/0081 , H01L51/5088 , H01L2251/5315 , H01L2251/558
摘要： Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
摘要翻译：发光元件具有由于发光元件内的散射光或反射光而导致其光提取效率低的问题。需要通过新的方法来增强发光元件的光提取效率。根据本发明，发光元件包括第一层产生孔，包括用于每种发射颜色的发光层的第二层和在阳极和阴极之间产生电子的第三层，以及第一层层根据每个发射颜色的包含发光层的各层而不同。使用其中混合有机化合物和金属氧化物的层作为第一层，因此即使当厚度增加时驱动电压也不会增加，这是优选的。

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