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11. 发明授权

US08313886B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08313886B2
公开(公告)日：2012-11-20
申请号：US12761202
申请日：2010-04-15
申请人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobatashi
发明人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Tomohiro Kobatashi
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.
摘要翻译：将包含式（1）的重复单元的添加剂聚合物加入到包含基础树脂，光致酸发生剂和有机溶剂的抗蚀剂组合物中。 R1是氢或甲基，R2是亚烷基或氟代亚烷基，R3是氟烷基。添加剂聚合物对波长高达200nm的辐射是高度透明的。通过选择聚合物结构可以调节聚合物的拒水性，水滑动性，酸性，水解性和其它性能。

12. 发明授权

US08211618B2 Positive resist composition and patterning process 有权
标题翻译：正抗蚀剂组成和图案化工艺
公开(公告)号：US08211618B2
公开(公告)日：2012-07-03
申请号：US12719229
申请日：2010-03-08
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , C08F244/00 , C08F2220/301 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111 , C08F234/02
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含作为基础树脂的具有羧基的聚合物，其氢被酸不稳定的苊基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

13. 发明授权

US08158330B2 Resist protective coating composition and patterning process 有权
标题翻译：抗蚀保护涂料组合物和图案化工艺
公开(公告)号：US08158330B2
公开(公告)日：2012-04-17
申请号：US12463750
申请日：2009-05-11
申请人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Satoshi Shinachi
发明人： Yuji Harada , Jun Hatakeyama , Koji Hasegawa , Satoshi Shinachi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/11 , C08F220/24 , C08F232/08 , G03F7/0046 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A protective coating composition comprising a copolymer of an alkali-soluble (α-trifluoromethyl) acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is applied onto a resist film. The protective coating is effective in minimizing development defects and forming a resist pattern of improved profile.
摘要翻译：包含碱溶性（α-三氟甲基）丙烯酸酯和降冰片烯衍生物作为基础聚合物的共聚物的保护性涂料组合物，任选地与含有重复单元的磺酸和/或磺酸胺盐的第二聚合物的混合物施加到抗蚀膜保护涂层有效地使开发缺陷最小化并形成改进型材的抗蚀剂图案。

14. 发明申请

US20110177462A1 PATTERNING PROCESS 有权
标题翻译：绘图过程
公开(公告)号：US20110177462A1
公开(公告)日：2011-07-21
申请号：US13010318
申请日：2011-01-20
申请人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
发明人： Jun Hatakeyama , Takeshi Nagata , Koji Hasegawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.
摘要翻译：通过将包含含有任选的酸不稳定基取代的萘酚基的重复单元，酸产生剂和有机溶剂的聚合物的抗蚀剂组合物涂布在基材上，烘烤以形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，烘烤，并用有机溶剂显影剂显影曝光的薄膜以形成其中未暴露的薄膜区域溶解并且曝光区域不溶解的负图案。在通过有机溶剂显影的正/负反转的图像形成过程中，抗蚀剂膜具有高的溶解对比度和受控的酸扩散。通过使抗蚀剂膜通过具有格子状图案和有机溶剂显影的掩模进行曝光，可以以高精度的尺寸控制形成细孔图案。

15. 发明申请

US20100227274A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20100227274A1
公开(公告)日：2010-09-09
申请号：US12720098
申请日：2010-03-09
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/30 , C08F220/38 , C08F234/02 , C08F244/00 , G03F7/0045 , G03F7/0046 , C08F232/08
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：包含作为基础树脂的具有羧基的聚合物的正性抗蚀剂组合物，其氢被酸不稳定的芴结构基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

16. 发明申请

US20100227273A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：积极的组合和绘图过程
公开(公告)号：US20100227273A1
公开(公告)日：2010-09-09
申请号：US12719229
申请日：2010-03-08
申请人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
发明人： Jun Hatakeyama , Koji Hasegawa , Seiichiro Tachibana
IPC分类号： G03F7/004 , G03F7/027 , G03F7/20 , C08F32/08 , C08F224/00
CPC分类号： G03F7/0397 , C08F12/24 , C08F212/14 , C08F212/32 , C08F220/18 , C08F220/28 , C08F220/30 , C08F220/38 , C08F244/00 , C08F2220/301 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/111 , C08F234/02
摘要： A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
摘要翻译：一种正性抗蚀剂组合物，其包含作为基础树脂的具有羧基的聚合物，其氢被酸不稳定的苊基团取代，表现出曝光前后的碱溶解速率的高对比度，高分辨率，良好的图案轮廓和最小的LER 暴露后，抑制酸扩散速度，提高耐蚀刻性的显着效果。

17. 发明授权

US07741015B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US07741015B2
公开(公告)日：2010-06-22
申请号：US12029940
申请日：2008-02-12
申请人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
发明人： Jun Hatakeyama , Takao Yoshihara , Takeshi Kinsho , Koji Hasegawa , Yoshio Kawai , Katsuya Takemura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0035 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123
摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half.
摘要翻译：通过在基材上涂布含有包含含有7-氧代降冰片烷环的重复单元和含酸不稳定基团的重复单元的聚合物和酸产生剂的正性抗蚀剂组合物形成抗蚀剂膜，对抗蚀剂膜进行热处理和曝光来形成图案用显影剂进行辐射，热处理和显影抗蚀剂膜，并使抗蚀剂膜在酸和/或热的帮助下交联和固化。然后在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。双重图案化工艺将图案之间的间距缩小到一半。

18. 发明申请

US20090081588A1 RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：US20090081588A1
公开(公告)日：2009-03-26
申请号：US12236359
申请日：2008-09-23
申请人： Jun Hatakeyama , Koji Hasegawa , Takeru Watanabe , Yuji Harada
发明人： Jun Hatakeyama , Koji Hasegawa , Takeru Watanabe , Yuji Harada
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R1 is F or CF3, R2 and R3 are H or alkyl or form a ring, R4 is H or an acid labile group, R5 to R6 are H, F, or alkyl, or two of R5 to R8 may together form a ring, m=0 or 1, 0.2≦a≦0.8, and 0.1≦b 0.6. A resist film of the composition has good barrier property against water so that leaching of the resist film with water is controlled, minimizing a change of pattern profile due to leach-out.
摘要翻译：抗蚀剂组合物包含在酸的作用下改变其碱溶解性的基础聚合物和包含重复单元（a）和（b）的添加剂共聚物。 R1是F或CF3，R2和R3是H或烷基或形成环，R4是H或酸不稳定基团，R5至R6是H，F或烷基，或R5至R8中的两个可以一起形成环， m = 0或1，0.2 <= a <= 0.8，0.1 <= b 0.6。该组合物的抗蚀剂膜对水具有良好的阻隔性，从而控制抗蚀剂膜与水的浸出，从而最小化由于浸出而导致的图案轮廓的变化。

19. 发明申请

US20080118860A1 Polymer, resist composition, and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20080118860A1
公开(公告)日：2008-05-22
申请号：US11905763
申请日：2007-10-03
申请人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
发明人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
IPC分类号： G03F7/039 , G03F7/30 , C08F24/00
CPC分类号： G03F7/0397 , C08F24/00 , C08F220/32 , G03F7/0046 , G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.
摘要翻译：作为添加剂，作为抗蚀剂组合物，含有含有含氟酯的内酯单元的碱溶性聚合物。抗蚀剂组合物形成显影后具有降低的接触角的抗蚀剂膜。抗蚀剂膜防止浸渍光刻时的水渗透。

20. 发明授权

US06531627B2 Ester compounds, polymers, resist compositions and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06531627B2
公开(公告)日：2003-03-11
申请号：US09842007
申请日：2001-04-26
申请人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Tsunehiro Nishi , Koji Hasegawa , Takeru Watanabe , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： G03F7/039 , C07C69/716 , C08G61/08 , G03F7/0045
摘要： An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, R4 is branched or cyclic, tertiary C5-C20 alkyl group, Z is a divalent C1-C10 hydrocarbon group, and k is 0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译：提供下式（1）的酯化合物：R 1是H，甲基或CH 2 CO 2 R 3，R 2是H，甲基或CO 2 R 3，R 3是C 1 -C 15烷基，R 4是支链或环状的，叔C5-C20烷基，Z 是二价C1-C10烃基，k为0或1.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，以及适用于使用电子束或深紫外线的微图案。

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