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11. 发明授权

US07977691B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07977691B2
公开(公告)日：2011-07-12
申请号：US12630370
申请日：2009-12-03
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

12. 发明授权

US07951626B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07951626B2
公开(公告)日：2011-05-31
申请号：US12613275
申请日：2009-11-05
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

13. 发明授权

US07723737B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07723737B2
公开(公告)日：2010-05-25
申请号：US12568630
申请日：2009-09-28
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae-Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
摘要翻译：本发明涉及一种发光装置。根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个所述发光单元以及设置在所述导电材料上的第二绝缘层。每个发光单元包括第一半导体层，第二半导体层和倾斜表面。第二绝缘层对应于每个发光单元的轮廓。

14. 发明申请

US20100006870A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100006870A1
公开(公告)日：2010-01-14
申请号：US12568630
申请日：2009-09-28
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
摘要翻译：本发明涉及一种发光装置。根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个所述发光单元以及设置在所述导电材料上的第二绝缘层。每个发光单元包括第一半导体层，第二半导体层和倾斜表面。第二绝缘层对应于每个发光单元的轮廓。

15. 发明授权

US07626209B2 Light emitting diode having active region of multi quantum well structure 有权
标题翻译：具有多量子阱结构的有源区的发光二极管
公开(公告)号：US07626209B2
公开(公告)日：2009-12-01
申请号：US12261627
申请日：2008-10-30
申请人： Dong Seon Lee , Eu Jin Hwang
发明人： Dong Seon Lee , Eu Jin Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
摘要翻译：公开了具有多量子阱结构的有源区的发光二极管。有源区位于GaN基N型和P型化合物半导体层之间。有源区中的至少一个势垒层包括未掺杂的InGaN层和Si掺杂的GaN层，并且掺杂Si的GaN层与位于其P型化合物半导体层侧面的阱层接触。因此，可以降低载流子溢出和量子限制的Stark效应，从而提高电子 - 空穴复合率。此外，公开了包括相对较厚的阻挡层和相对薄的阻挡层的多量子阱结构的有源区。

16. 发明申请

US20080251796A1 Light Emitting Device and Method of Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20080251796A1
公开(公告)日：2008-10-16
申请号：US11993965
申请日：2006-06-22
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semi-conductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻发光单元的P型半导体层彼此连接，并且至少包括P- 发光单元的半导体层的类型与水平面的斜率为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

17. 发明授权

US08476648B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08476648B2
公开(公告)日：2013-07-02
申请号：US11993965
申请日：2006-06-22
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

18. 发明授权

US08294386B2 Light emitting device with light emitting cells arrayed 有权
标题翻译：具有排列发光单元的发光装置
公开(公告)号：US08294386B2
公开(公告)日：2012-10-23
申请号：US13243802
申请日：2011-09-23
申请人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
发明人： Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Lacroix Yves
IPC分类号： H05B37/22
CPC分类号： H05B33/0821 , H01L24/37 , H01L24/40 , H01L27/156 , H01L33/62 , H01L2224/371 , H01L2224/40137 , H01L2924/00014 , H01L2924/12041 , H05B33/0803 , H05B33/0809 , Y02B20/348 , H01L2924/00 , H01L2224/37099 , H01L2224/84
摘要： The present invention relates to a light emitting device. The light emitting device according to the present invention comprises a light emitting cell block having a plurality of light emitting cells; and a bridge rectifying circuit connected to input and output terminals of the light emitting cell block, wherein the bridge rectifying circuit includes a plurality of diodes between nodes. In manufacturing an AC light emitting device with a bridge rectifying circuit built therein, the present invention can provide a light emitting device capable of enhancing the reliability and luminance of the light emitting device by setting the size of diodes of the bridge rectifying circuit to be a certain size and controlling the number thereof.
摘要翻译：本发明涉及一种发光装置。根据本发明的发光器件包括具有多个发光单元的发光单元块; 以及连接到所述发光单元块的输入和输出端子的桥式整流电路，其中所述桥式整流电路在节点之间包括多个二极管。在制造其中内置有桥式整流电路的交流发光装置的情况下，本发明可以提供一种通过将桥式整流电路的二极管的尺寸设定为一个可以提高发光装置的可靠性和亮度的发光装置一定的尺寸并控制其数量。

19. 发明授权

US08183557B2 (Al,In,Ga,B)N device structures on a patterned substrate 有权
标题翻译：（Al，In，Ga，B）N个器件结构
公开(公告)号：US08183557B2
公开(公告)日：2012-05-22
申请号：US12234311
申请日：2008-09-19
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1−xN and InyGa1−yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

20. 发明授权

US07901964B2 Method of fabricating AC light emitting device having photonic crystal structure 有权
标题翻译：制造具有光子晶体结构的AC发光器件的方法
公开(公告)号：US07901964B2
公开(公告)日：2011-03-08
申请号：US12546155
申请日：2009-08-24
申请人： Jae-Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
发明人： Jae-Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Jong Kyu Kim , Jun Hee Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/007 , H01L33/20 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
摘要翻译：公开了具有光子晶体结构的AC发光器件及其制造方法。发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。此外，在第二导电型半导体层中形成光子晶体结构。光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

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