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11. 发明申请

US20100197103A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100197103A1
公开(公告)日：2010-08-05
申请号：US12696886
申请日：2010-01-29
申请人： Jun-bum Lee , Tae-hong Ha , Seong-hwee Cheong
发明人： Jun-bum Lee , Tae-hong Ha , Seong-hwee Cheong
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L21/823425 , H01L27/1052 , H01L27/11536 , H01L29/6653
摘要： A method of fabricating a semiconductor device can include forming gate structures for transistors on a semiconductor substrate in a cell region and in a peripheral circuit region, forming an offset spacer of a first material on the gate structure, performing first ion implantation for source/drain region formation using the gate structures and the offset spacer as an ion implantation mask, forming a material layer of a second material on the semiconductor substrate and the gate structures, forming a material layer of a third material, which has an etch selectivity with respect to the second material, on the material layer made of the second material, etching-back the material layer made of the third material using the material layer made of the second material as an etch stop layer to form a multi-layered spacer comprising the second material and the third material, performing second ion implantation for source/drain region formation using the gate structures and the multi-layered spacer as an ion implantation mask, and removing the material layer of the third material.
摘要翻译：制造半导体器件的方法可以包括在单元区域和周边电路区域中的半导体衬底上形成用于晶体管的栅极结构，在栅极结构上形成第一材料的偏移间隔物，进行源极/漏极的第一离子注入使用栅极结构和偏移间隔物作为离子注入掩模的区域形成，在半导体衬底上形成第二材料的材料层和栅极结构，形成第三材料的材料层，其具有相对于在由第二材料制成的材料层上的第二材料使用由第二材料制成的材料层作为蚀刻停止层来蚀刻由第三材料制成的材料层，以形成包含第二材料的多层间隔物和第三材料，使用门结构和多层温泉进行源/漏区形成的第二离子注入 cer作为离子注入掩模，并且去除第三材料的材料层。

12. 发明授权

US08043922B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08043922B2
公开(公告)日：2011-10-25
申请号：US12696886
申请日：2010-01-29
申请人： Jun-bum Lee , Tae-hong Ha , Seong-hwee Cheong
发明人： Jun-bum Lee , Tae-hong Ha , Seong-hwee Cheong
IPC分类号： H01L21/336
CPC分类号： H01L29/6656 , H01L21/823425 , H01L27/1052 , H01L27/11536 , H01L29/6653
摘要： A method of fabricating a semiconductor device, can be provided by forming gate structures for transistors on a semiconductor substrate in a cell region and in a peripheral circuit region. An offset spacer can be formed including a first material on the gate structures. A first ion implantation can be done using the gate structures and the offset spacer as an ion implantation mask to form source/drain regions. A material layer can be formed including a second material on the semiconductor substrate and on the gate structures. A material layer can be formed of a third material, having an etch selectivity with respect to the second material, on the material layer of the second material. An etch-back can be performed the material layer comprising the third material in the cell region and in the peripheral region, to simultaneously expose the source/drains region in the peripheral region and not expose the source/drain regions in the cell region.
摘要翻译：可以通过在单元区域和外围电路区域中的半导体衬底上形成用于晶体管的栅极结构来提供制造半导体器件的方法。可以在栅极结构上形成包括第一材料的偏移间隔物。可以使用栅极结构和偏移间隔物作为离子注入掩模来进行第一离子注入以形成源极/漏极区域。可以在半导体衬底上和门结构上形成包括第二材料的材料层。材料层可以由第二材料的材料层上具有相对于第二材料的蚀刻选择性的第三材料形成。可以在单元区域和外围区域中执行包括第三材料的材料层的回蚀，以同时暴露外围区域中的源极/漏极区域，并且不暴露电池区域中的源极/漏极区域。

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