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11. 发明申请

US20080061353A1 Flash Memory Device 有权
标题翻译：闪存设备
公开(公告)号：US20080061353A1
公开(公告)日：2008-03-13
申请号：US11942227
申请日：2007-11-19
申请人： Sang Oh , Hee Chang , Hee Lee
发明人： Sang Oh , Hee Chang , Hee Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11551 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can be reduced while maintaining the overlap area between the control gate and the floating gate. Therefore, inter-cell interference can be reduced without lowering program speed.
摘要翻译：一种闪存器件及其制造方法，其中浮置栅极顶部的宽度比浮置栅极底部处的宽度窄。可以减小浮动栅极的面积，同时保持控制栅极和浮动栅极之间的重叠区域。因此，可以降低小区间干扰而不降低程序速度。

12. 发明申请

US20070004137A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070004137A1
公开(公告)日：2007-01-04
申请号：US11297917
申请日：2005-12-09
申请人： Sang Oh , Hee Chang , Hee Lee
发明人： Sang Oh , Hee Chang , Hee Lee
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L21/28273 , H01L27/11521 , H01L27/11551 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can be reduced while maintaining the overlap area between the control gate and the floating gate. Therefore, inter-cell interference can be reduced without lowering program speed.
摘要翻译：一种闪存器件及其制造方法，其中浮置栅极顶部的宽度比浮置栅极底部处的宽度窄。可以减小浮动栅极的面积，同时保持控制栅极和浮动栅极之间的重叠区域。因此，可以降低小区间干扰而不降低程序速度。

13. 发明申请

US20050142752A1 Method for fabricating flash memory device 失效
标题翻译：闪存器件制造方法
公开(公告)号：US20050142752A1
公开(公告)日：2005-06-30
申请号：US11026610
申请日：2004-12-30
申请人： Sang Oh
发明人： Sang Oh
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01L29/42324
摘要： A flash memory device fabrication method is disclosed. A disclosed method comprises: depositing a first oxide layer on a substrate; depositing a first polysilicon layer on the first oxide layer; forming a second oxide layer on the entire surface of the first polysilicon layer; removing the second oxide layer; making the first polysilicon layer with an embossed shape by performing a heat treatment; depositing a dielectric layer on the top of the first polysilicon layer; depositing a second polysilicon layer on the entire surface of the dielectric layer; and removing some parts of the dielectric layer and the second polysilicon layer through a patterning process and an etching process.
摘要翻译：公开了一种闪存器件制造方法。所公开的方法包括：在衬底上沉积第一氧化物层; 在所述第一氧化物层上沉积第一多晶硅层; 在所述第一多晶硅层的整个表面上形成第二氧化物层; 去除所述第二氧化物层; 通过进行热处理来制造具有压花形状的第一多晶硅层; 在所述第一多晶硅层的顶部上沉积介电层; 在所述电介质层的整个表面上沉积第二多晶硅层; 以及通过图案化工艺和蚀刻工艺去除电介质层和第二多晶硅层的一些部分。

14. 发明申请

US20050020076A1 Method for manufacturing MTJ cell of magnetic random access memory 审中-公开
标题翻译：磁性随机存取存储器的MTJ单元的制造方法
公开(公告)号：US20050020076A1
公开(公告)日：2005-01-27
申请号：US10734226
申请日：2003-12-15
申请人： Kye Lee , In Jang , Sang Oh , Young Yang , Jin Seong , Suk Hong , Jin Kim
发明人： Kye Lee , In Jang , Sang Oh , Young Yang , Jin Seong , Suk Hong , Jin Kim
IPC分类号： H01L27/105 , H01L21/302 , H01L21/461 , H01L21/82 , H01L21/8239 , H01L21/8246 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12
摘要： The present invention discloses a method for manufacturing MTJ cell of MRAM. In accordance with the method, a portion of a free magnetic layer by a hard mask layer pattern is subjected to a halo ion implant process. The state of the portion of the free magnetic layer subjected to the halo ion implant process is converted into an amorphous state. The portion of the free magnetic layer is then oxidized to form an oxide film. A patterning of MTJ cell is performed to form a MTJ cell, wherein polymers are not generated since the oxide film is etched instead of the free magnetic layer.
摘要翻译：本发明公开了一种制造MRAM的MTJ电池的方法。根据该方法，通过硬掩模层图案的自由磁性层的一部分进行晕圈离子注入工艺。经过卤素离子注入工艺的自由磁性层部分的状态被转换为无定形状态。然后将自由磁性层的部分氧化形成氧化膜。执行MTJ电池的图案化以形成MTJ电池，其中由于氧化膜被蚀刻而不是自由磁性层，不会产生聚合物。

15. 发明授权

US5955700A Housing unit including a latching mechanism with a cam 失效
标题翻译：壳体单元包括具有凸轮的闩锁机构
公开(公告)号：US5955700A
公开(公告)日：1999-09-21
申请号：US728
申请日：1997-12-30
申请人： Michael John Slipy , Sang Oh
发明人： Michael John Slipy , Sang Oh
IPC分类号： H01M2/10 , H04M1/02 , H05K5/02 , H02G3/14
CPC分类号： H04M1/0262 , H01M2/1055 , H04M1/0202 , H05K5/0221
摘要： A housing unit (302) includes a latching mechanism (106) having a cylindrical head (202), a cylindrical rod (204), a cam (206), and a catch (208). The latching mechanism (106) is rotatably mounted in the housing unit (302). The catch (208) and a cam surface (216) of the cam (206) are rotatably exposable through an opening (164) on the housing unit (302) and the cylindrical head (202) is exposed through a circular opening (314) on the housing unit (302). When a battery door cover (102) meets with the housing unit (302) for attachment, a catch (118) of the battery door cover (102) rides the cam surface (216) to rotate the latching mechanism (106) until the catch (208) locks with the catch (118).
摘要翻译：壳体单元（302）包括具有圆柱形头部（202），圆柱形杆（204），凸轮（206）和止动件（208）的锁定机构（106）。闩锁机构（106）可旋转地安装在壳体单元（302）中。凸轮（206）的凸轮（208）和凸轮表面（216）可旋转地通过壳体单元（302）上的开口（164）露出，圆柱形头部（202）通过圆形开口（314）露出，在壳体单元（302）上。当电池门盖（102）与用于附接的壳体单元（302）相接触时，电池门盖102的卡扣118将凸轮表面216滑动以旋转闩锁机构106直到卡扣（208）与捕捉器（118）锁定。

16. 发明授权

US5598964A Apparatus for ultrasonic welding of battery assemblies 失效
标题翻译：电池组件超声波焊接设备
公开(公告)号：US5598964A
公开(公告)日：1997-02-04
申请号：US536558
申请日：1995-09-29
申请人： Kiron Gore , Sang Oh
发明人： Kiron Gore , Sang Oh
IPC分类号： B29C65/08 , B29C65/78 , H01M2/10 , B23K20/10
CPC分类号： B29C66/8322 , B29C65/08 , B29C65/7867 , B29C66/542 , H01M2/1022 , Y10T29/4911
摘要： An unwelded battery assembly (32) is fed to a shuttle (36) which moves the unwelded battery assembly (32) to a moveable platform (46) in a raised position. The platform lowers the battery assembly into a nest (44) which rigidly supports the battery assembly. An ultrasonic horn is lowered into contact with the battery assembly and welds the battery cover (16) to the battery housing (14). The welded battery assembly (57) is then raised out of the nest by the moveable platform (46), and is moved to a second stage (48) while another unwelded battery assembly is shuttled to the platform. A central control circuit (49) operates and synchronizes the apparatus.
摘要翻译：未焊接的电池组件（32）被供给到将未焊接的电池组件（32）移动到升高位置的可移动平台（46）的梭子（36）。该平台将电池组件降低成刚性地支撑电池组件的嵌套（44）。将超声波喇叭降低成与电池组件接触并将电池盖（16）焊接到电池壳体（14）。焊接的电池组件（57）然后通过可移动平台（46）从嵌套中升出，并移动到第二阶段（48），而另一个未焊接的电池组件穿梭到平台。中央控制电路（49）操作并同步该设备。

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