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11. 发明申请

US20070287233A1 Piezo-TFT cantilever MEMS fabrication 有权
标题翻译：压电薄膜悬臂MEMS制造
公开(公告)号：US20070287233A1
公开(公告)日：2007-12-13
申请号：US11818716
申请日：2007-06-15
申请人： Changqing Zhan , Michael Wolfson , John Hartzell
发明人： Changqing Zhan , Michael Wolfson , John Hartzell
IPC分类号： H01L21/339
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81C1/00246 , B81C2203/075 , C30B1/02 , C30B29/00 , G01L1/044 , G01L9/0042 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L27/12 , H01L29/66757 , H04R17/02 , H04R31/006
摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
摘要翻译：提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

12. 发明申请

US20060211162A1 Crystal-structure-processed devices, methods and systems for making 有权
标题翻译：水晶结构处理设备，制作方法和系统
公开(公告)号：US20060211162A1
公开(公告)日：2006-09-21
申请号：US11227843
申请日：2005-09-14
申请人： John Hartzell
发明人： John Hartzell
IPC分类号： H01L21/00
CPC分类号： B81C1/00 , C30B13/00 , C30B35/00
摘要： Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, mechanical devices. Processing is laser-performed in relation to a selected material whose internal crystalline structure becomes appropriately changed thereby to establish the desired mechanical properties for a created device.
摘要翻译：加工和系统创建，以及与之相关的产品，非常小尺寸的奇异或单片阵列的机械装置。相对于其内部晶体结构变得适当变化的选定材料进行激光处理，从而建立所创造的器件的期望的机械性能。

13. 发明申请

US20050282399A1 Electroformed metallization 失效
标题翻译：电铸金属化
公开(公告)号：US20050282399A1
公开(公告)日：2005-12-22
申请号：US10871938
申请日：2004-06-17
申请人： David Evans , John Hartzell
发明人： David Evans , John Hartzell
IPC分类号： C23C18/16 , C23C18/54 , C25D1/04 , C25D5/02 , C25D5/54 , G02F1/13 , H01L21/288 , H01L21/768 , H01J1/02 , H01L21/31 , H01L21/44 , H01L21/469
CPC分类号： H01L21/288 , C23C18/1605 , C23C18/165 , C23C18/1657 , C25D1/003 , C25D5/022 , C25D5/50 , H01L21/2885 , H01L21/76885
摘要： A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and substrate surface; forming a strike layer overlying the base layer; forming a top layer overlying the strike layer; selectively etching to remove the top layer overlying the substrate surface, exposing a strike layer surface; and, electroforming a metal structure overlying the strike layer surface. The electroformed metal structure is deposited using an electroplating or electroless deposition process. Typically, the metal is Cu, Au, Ir, Ru, Rh, Pd, Os, Pt, or Ag. The base, strike, and top layers can be deposited using physical vapor deposition (PVD), evaporation, reactive sputtering, or metal organic chemical vapor deposition (MOCVD).
摘要翻译：提供了一种电铸金属集成电路结构的方法。该方法包括：通过层间绝缘体形成诸如通孔或线的开口，暴露衬底表面; 形成覆盖层间绝缘体和衬底表面的基层; 形成覆盖基层的冲击层; 形成覆盖所述冲击层的顶层; 选择性蚀刻以去除覆盖在衬底表面上的顶层，暴露出一层击打层表面; 并且电铸在覆盖着撞击层表面的金属结构。使用电镀或无电沉积工艺沉积电铸金属结构。通常，金属是Cu，Au，Ir，Ru，Rh，Pd，Os，Pt或Ag。可以使用物理气相沉积（PVD），蒸发，反应溅射或金属有机化学气相沉积（MOCVD）来沉积基底，打击和顶层。

14. 发明申请

US20050130360A1 Piezo-TFT cantilever MEMS 有权
标题翻译：压电薄膜悬臂MEMS
公开(公告)号：US20050130360A1
公开(公告)日：2005-06-16
申请号：US11031320
申请日：2005-01-05
申请人： Changqing Zhan , Michael Wolfson , John Hartzell
发明人： Changqing Zhan , Michael Wolfson , John Hartzell
IPC分类号： H01L21/336
CPC分类号： B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81C1/00246 , B81C2203/075 , C30B1/02 , C30B29/00 , G01L1/044 , G01L9/0042 , G01P15/0802 , G01P15/124 , G01P2015/0828 , H01L27/12 , H01L29/66757 , H04R17/02 , H04R31/006
摘要： A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.
摘要翻译：提供了压电TFT悬臂微机电系统（MEMS）及相关制造工艺。该方法包括：提供例如玻璃等基板; 形成覆盖衬底的薄膜; 形成薄膜悬臂梁; 并且同时在悬臂梁内形成TFT。 TFT可以形成为最少部分地覆盖在悬臂梁顶表面上，至少部分地覆盖悬臂梁底表面或嵌入在悬臂梁内。在一个示例中，在衬底上形成薄膜包括：选择性地形成具有第一应力水平的第一层; 选择性地形成覆盖在第一层上的第一有源Si区; 以及以第二应力水平选择性地形成覆盖所述第一层的第二层。薄膜悬臂梁由第一和第二层形成，而TFT源极/漏极（S / D）和沟道区域由第一有源Si区形成。

15. 发明申请

US20070155137A1 High density plasma non-stoichiometric SiOxNy films 有权
标题翻译：高密度等离子体非化学计量的SiOxNy薄膜
公开(公告)号：US20070155137A1
公开(公告)日：2007-07-05
申请号：US11698623
申请日：2007-01-26
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/20
CPC分类号： G02B1/10 , C23C16/308 , C23C16/509 , G02B1/11
摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
摘要翻译：提供了高密度等离子体法，用于形成SiO x N N Y Y薄膜。该方法提供衬底并引入硅（Si）前体。使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。结果，形成SiO（X + Y <2和Y> 0）的SiO N 薄膜。 SiO 2薄膜可以是化学计量的或非化学计量的。 SiO 2薄膜可以分级，这意味着X和Y的值随着SiO 2 X N的厚度而变化， SUB> Y 薄膜。此外，该方法能够实现SiO 2薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiO x N N Y Y薄膜的组合。

16. 发明申请

US20060079100A1 High density plasma grown silicon nitride 审中-公开
标题翻译：高密度等离子体生长氮化硅
公开(公告)号：US20060079100A1
公开(公告)日：2006-04-13
申请号：US11218111
申请日：2005-09-01
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02247 , H01L21/02252 , H01L21/02329 , H01L21/0234 , H01L21/049 , H01L29/66666 , H01L29/6675
摘要： A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.
摘要翻译：提供了形成氮化硅（SiNx）膜的方法。该方法包括：提供Si衬底或Si膜层; 可选地保持约400℃或更低的衬底温度; 执行高电压（HD）氮等离子体处理，其中顶电极连接到感应耦合的HD等离子体源; 并且在衬底上形成SiN x的生长层。更具体地说，HD氮等离子体处理包括使用电感耦合等离子体（ICP）源，在氮源的气氛中，独立于供给底部电极的功率的功率和频率，向顶部电极供电加油站。 SiNx层可以在大约第一分钟内以至少约的初始生长速率生长。

17. 发明申请

US20050215066A1 High density plasma process for the formation of silicon dioxide on silicon carbide substrates 有权
标题翻译：用于在碳化硅衬底上形成二氧化硅的高密度等离子体工艺
公开(公告)号：US20050215066A1
公开(公告)日：2005-09-29
申请号：US10812591
申请日：2004-03-29
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L29/872 , B05D5/12 , C23C16/02 , C23C16/40 , C23C16/509 , C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/31 , H01L21/316 , H01L21/36 , H01L21/469 , H01L29/47
CPC分类号： H01L21/049 , C23C16/0272 , C23C16/402 , C23C16/509 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H01L21/045 , H01L21/31612
摘要： Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer overlying the SiC substrate. Typically, performing the HD plasma-based process includes connecting a top electrode to an inductively coupled HD plasma source. In one aspect, SiO2 is grown on the SiC substrate. Then, an HD plasma oxidation process is performed that creates a reactive oxygen species and breaks the Si—C bonds in the SiC substrate, to form free Si and C atoms in the SiC substrate. The free Si atoms in the SiC substrate are bonded to the HD plasma-generated reactive oxygen species, and the SiO2 layer is grown.
摘要翻译：提供了在碳化硅（SiC）衬底上形成二氧化硅（SiO 2）的方法。该方法包括：提供SiC衬底; 提供包含氧气的气氛; 执行高密度（HD）等离子体工艺; 并且形成覆盖在SiC衬底上的SiO 2层。通常，执行基于HD等离子体的工艺包括将顶部电极连接到电感耦合的HD等离子体源。在一个方面，在SiC衬底上生长SiO 2。然后，进行HD等离子体氧化处理，其产生活性氧物质并破坏SiC衬底中的Si-C键，以在SiC衬底中形成游离的Si和C原子。 SiC衬底中的自由Si原子与HD等离子体产生的活性氧结合，并且生长SiO 2层。

18. 发明申请

US20050202653A1 High density plasma process for silicon thin films 失效
标题翻译：硅薄膜的高密度等离子体工艺
公开(公告)号：US20050202653A1
公开(公告)日：2005-09-15
申请号：US10871939
申请日：2004-06-17
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L29/872 , B05D5/12 , C23C16/24 , C23C16/455 , C23C16/509 , C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/31 , H01L21/316 , H01L21/36 , H01L21/42 , H01L21/469 , H01L29/47 , H01L29/786
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/049 , H01L21/31612
摘要： A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an inductively coupled plasma (ICP) source; maintaining a substrate temperature of 400 degrees C., or less; and, forming a semiconductor layer overlying the substrate that is made from Si or Si-germanium. The HD PECVD process is capable of depositing Si at a rate of greater than 100 Å per minute. The substrate temperature can be as low as 50 degrees C. Microcrystalline Si, a-Si, or a polycrystalline Si layer can be formed over the substrate. Further, the deposited Si can be either intrinsic or doped. Typically, the supplied atmosphere includes Si and H. For example, an atmosphere can be supplied including SiH4 and H2, or comprising H2 and Silane with H2/Silane ratio in the range of 0-100.
摘要翻译：提供了形成Si和Si-Ge薄膜的方法。该方法包括：提供塑料或玻璃的低温基材; 提供气氛; 执行高密度（HD）等离子体处理，例如使用电感耦合等离子体（ICP）源的HD PECVD工艺; 保持基板温度在400摄氏度以下; 并且形成由Si或Si-锗制成的衬底上的半导体层。 HD PECVD工艺能够以每分钟大于100埃的速率沉积Si。衬底温度可以低至50摄氏度。可以在衬底上形成微晶Si，a-Si或多晶Si层。此外，沉积的Si可以是固有的或掺杂的。通常，供给的气氛包括Si和H.例如，可以提供包括SiH 4和H 2的气体，或者包含H 2和硅烷，H 2 /硅烷比在0-100范围内。

19. 发明申请

US20050153475A1 Microelectromechanical thin-film device 有权
标题翻译：微机电薄膜器件
公开(公告)号：US20050153475A1
公开(公告)日：2005-07-14
申请号：US11058501
申请日：2005-02-14
申请人： John Hartzell
发明人： John Hartzell
IPC分类号： B81C1/00 , C30B13/00 , C30B35/00 , H01L21/20 , H01L21/268 , H01L49/00 , H01L21/00
CPC分类号： B81C1/00 , C30B13/00 , C30B35/00
摘要： Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on selected semiconductor material whose internal crystalline structure becomes appropriately changed to establish the desired mechanical properties for a created device.
摘要翻译：加工和制造系统，以及与之相关的产品，非常小尺寸的奇异或单片阵列的半导体机械装置。对选择的半导体材料进行激光处理，该半导体材料的内部晶体结构被适当地改变以建立所需的机械性能。

20. 发明授权

US06878640B2 Method for fabricating silicon targets 有权
标题翻译：制造硅靶的方法
公开(公告)号：US06878640B2
公开(公告)日：2005-04-12
申请号：US10749060
申请日：2003-12-30
申请人： Apostolos Voutsas , John Hartzell
发明人： Apostolos Voutsas , John Hartzell
IPC分类号： C23C14/34 , C23C14/56 , C30B33/00 , H01L21/203 , H01L21/336 , H01L29/786 , H01L21/302 , H01L21/461
CPC分类号： C30B29/06 , C23C14/3407 , C23C14/564 , C30B33/00 , H01L29/66757 , H01L29/78675 , Y10S438/977
摘要： A method for fabricating silicon tiles and silicon tile targets has been provided, such as may be used in the sputter deposition of thin film transistor (TFT) silicon films. The method describes processes of cutting the tiles, beveling the tiles edges, etching the tiles to minimize residual damage caused by cutting the tiles, polishing the tiles to a specified flatness, and attaching the tiles to a backing plate. All these processes are performed with the aim of minimizing contamination and particle formations when the target is used for sputter deposition.
摘要翻译：已经提供了制造硅瓦和硅瓦靶的方法，例如可以用于薄膜晶体管（TFT）硅膜的溅射沉积。该方法描述了切割瓦片的方法，使瓦片边缘倾斜，蚀刻瓦片以最小化由切割瓦片引起的残余损伤，将瓦片抛光到指定的平面度，以及将瓦片附接到背板。所有这些过程都是为了在将目标物用于溅射沉积时最大限度地减少污染物和颗粒形成。

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