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11. 发明申请

US20100019298A1 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding 有权
标题翻译：组件包括磁性元件和磁屏障或屏蔽
公开(公告)号：US20100019298A1
公开(公告)日：2010-01-28
申请号：US12561994
申请日：2009-09-17
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H01L29/82
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08 , H01L43/12
摘要： The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.
摘要翻译：本发明包括形成诸如MRAM结构的半导体结构的方法。在半导体衬底上形成块。第一层和第二层形成在块上方，并且在靠近块的衬底的区域上方形成。将第一层和第二层从块上方移除，同时将第一层和第二层的部分留在靠近块的区域上。从第二层下面移除第一层中的至少一些，以在靠近块的区域上形成通道。在通道内提供诸如软磁材料的材料。本发明还包括半导体结构。

12. 发明授权

US07470552B2 Method for production of MRAM elements 有权
标题翻译：生产MRAM元件的方法
公开(公告)号：US07470552B2
公开(公告)日：2008-12-30
申请号：US11700958
申请日：2007-02-01
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08 , H01L43/12
摘要： Magneto-resistive random access memory elements include a ferromagnetic layer having uniaxial anisotropy provided by elongate structures formed in the ferromagnetic film. The magnetic dipole aligns with the long axis of each structure. The structures can be formed in a variety of ways. For example, the ferromagnetic film can be applied to a seed layer having a textured surface. Alternatively, the ferromagnetic film can be stressed to generate the textured structure. Chemical mechanical polishing also can be used to generated the structures.
摘要翻译：磁阻随机存取存储元件包括由在铁磁膜中形成的细长结构提供的具有单轴各向异性的铁磁层。磁偶极子与每个结构的长轴对齐。可以以各种方式形成结构。例如，铁磁膜可以施加到具有纹理表面的种子层。或者，铁磁膜可以被应力以产生纹理结构。化学机械抛光也可用于生成结构。

13. 发明授权

US07214547B2 Methods of forming semiconductor constructions 有权
公开(公告)号：US07214547B2
公开(公告)日：2007-05-08
申请号：US11326643
申请日：2006-01-06
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08 , H01L43/12
摘要： The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.

14. 发明授权

US07189583B2 Method for production of MRAM elements 有权
标题翻译：生产MRAM元件的方法
公开(公告)号：US07189583B2
公开(公告)日：2007-03-13
申请号：US10610823
申请日：2003-07-02
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H03L21/00
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08 , H01L43/12
摘要： Magneto-resistive random access memory elements include a ferromagnetic layer having uniaxial anisotropy provided by elongate structures formed in the ferromagnetic film. The magnetic dipole aligns with the long axis of each structure. The structures can be formed in a variety of ways. For example, the ferromagnetic film can be applied to a seed layer having a textured surface. Alternatively, the ferromagnetic film can be stressed to generate the textured structure. Chemical mechanical polishing also can be used to generated the structures.
摘要翻译：磁阻随机存取存储元件包括由在铁磁膜中形成的细长结构提供的具有单轴各向异性的铁磁层。磁偶极子与每个结构的长轴对齐。可以以各种方式形成结构。例如，铁磁膜可以施加到具有纹理表面的种子层。或者，铁磁膜可以被应力以产生纹理结构。化学机械抛光也可用于生成结构。

15. 发明授权

US07034374B2 MRAM layer having domain wall traps 有权
公开(公告)号：US07034374B2
公开(公告)日：2006-04-25
申请号：US10645981
申请日：2003-08-22
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H01L29/82
CPC分类号： G11C19/0808 , B82Y25/00 , G11C11/14 , G11C11/15 , G11C2213/77 , H01F10/325 , H01F10/3254 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A common pinned layer is shared by multiple memory cells in an MRAM device. The common pinned layer includes a plurality of domain wall traps that prevent the formation of domain walls within a region of the common pinned layer corresponding to a given memory cell. Therefore, the memory cells can advantageously be formed such that the domain walls, to the extent they exist, fall between (rather than within) the memory cells, thereby improving the performance of the MRAM device.

16. 发明授权

US06903399B2 Antiferromagnetically stabilized pseudo spin valve for memory applications 有权
标题翻译：用于存储器应用的反铁磁稳定的假自旋阀
公开(公告)号：US06903399B2
公开(公告)日：2005-06-07
申请号：US10760127
申请日：2004-01-16
申请人： Romney R. Katti , Joel A. Drewes , Timothy J. Vogt
发明人： Romney R. Katti , Joel A. Drewes , Timothy J. Vogt
IPC分类号： G11C11/00 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/12 , H01L31/119
CPC分类号： H01L27/222 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3268 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.
摘要翻译：本发明涉及提高磁性随机存取存储器（MRAM）中磁存储单元的开关可靠性。本发明的实施例将反铁磁体添加到磁存储单元。可以在与MRAM的硬层相对的软层侧的MRAM中与软层相邻地形成反铁磁性层。一个实施例还包括在反铁磁层和软层之间的非反铁磁材料的附加中间层。

17. 发明授权

US06900489B2 Reducing the effects of néel coupling in MRAM structures 失效
标题翻译：减少MRAM结构中nel耦合的影响
公开(公告)号：US06900489B2
公开(公告)日：2005-05-31
申请号：US10424791
申请日：2003-04-29
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： H01F10/32 , H01L27/22 , H01L43/08 , H01L29/76
CPC分类号： H01L27/222 , B82Y25/00 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L43/08
摘要： A magnetic memory element has reduced Néel coupling between a pinned layer and a free layer. The magnetic memory element includes a first pinned ferromagnet and a free ferromagnet which are separated by a barrier layer. The magnetic field direction of the pinned layer is fixed, for example, by an antiferromagnetic exchange layer. An additional ferromagnetic layer, provided in coupling relationship with the first pinned ferromagnet, offsets Néel coupling between the free ferromagnetic layer and the first pinned ferromagnet.
摘要翻译：磁记忆元件在钉扎层和自由层之间减少了Néel耦合。磁存储元件包括由势垒层分开的第一固定铁磁体和自由铁磁体。被钉扎层的磁场方向例如由反铁磁性交换层固定。与第一被钉扎铁磁体成耦合关系的附加铁磁层抵消了自由铁磁层与第一固定铁磁体之间的Néel耦合。

18. 发明授权

US06885073B2 Method and apparatus providing MRAM devices with fine tuned offset 有权
标题翻译：为MRAM设备提供微调偏移的方法和设备
公开(公告)号：US06885073B2
公开(公告)日：2005-04-26
申请号：US10404146
申请日：2003-04-02
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： G11C11/15 , H01F10/32 , H01F41/30 , H01L43/08 , H01L29/82 , H01L43/00
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/15 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： A MRAM cell structure is disclosed as containing an additional ferromagnetic layer and coupling layer between the third ferromagnetic layer and the anti-ferromagnetic layer. The additional ferromagnetic layer affects the demagnetization field to which the free layer is exposed, thereby reducing any bias introduced to the free layer. Further, by adjusting the thickness of the additional ferromagnetic layer, the effects of Neel coupling on the free layer are reduced.
摘要翻译：公开了一种MRAM单元结构，其在第三铁磁层和反铁磁层之间包含附加的铁磁层和耦合层。附加的铁磁层影响自由层暴露的去磁场，从而减少引入自由层的任何偏压。此外，通过调整附加铁磁层的厚度，Neel耦合对自由层的影响降低。

19. 发明授权

US06781173B2 MRAM sense layer area control 有权
公开(公告)号：US06781173B2
公开(公告)日：2004-08-24
申请号：US10230300
申请日：2002-08-29
申请人： Mark E. Tuttle , Joel A. Drewes
发明人： Mark E. Tuttle , Joel A. Drewes
IPC分类号： H01L2976
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F41/308 , H01L43/08 , H01L43/12
摘要： This invention relates to MRAM technology and new MRAM memory element designs. Specifically, this invention relates to the use of ferromagnetic layers of different sizes in an MRAM element. This reduces magnetic coupling between a pinned layer and a sense layer and provides a more effective memory element. In addition, the design of the present invention reduces the instances of electrical shorts occurring between the ferromagnetic layers in an MRAM element

20. 发明授权

US06683806B2 Methods of operating MRAM devices 有权
标题翻译：操作MRAM设备的方法
公开(公告)号：US06683806B2
公开(公告)日：2004-01-27
申请号：US10107605
申请日：2002-03-26
申请人： Joel A. Drewes
发明人： Joel A. Drewes
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： An MRAM construction can include an MRAM device between a pair of substantially orthogonal conductive lines, with one of the substantially orthogonal conductive lines being configured to induce Hx within the device, and the other being configured to induce Hy within the device. A first pulse of current is passed along a first of the two conductive lines while passing at least two sequential pulses of current along a second of the two conductive lines. The sequential pulses include a pulse along a first direction of the second of the two conductive lines, and a pulse along a second direction opposite to the first direction.
摘要翻译： MRAM结构可以包括在一对基本上正交的导线之间的MRAM器件，其中一个基本上正交的导线被配置为在器件内引入Hx，而另一个被配置为在器件内诱导Hy。电流的第一脉冲沿着两条导线中的第一条通过，同时沿着两条导线中的第二条通过至少两条顺序的电流脉冲。顺序脉冲包括沿着两条导线中第二条线的第一方向的脉冲，以及沿与第一方向相反的第二方向的脉冲。

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