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    • 11. 发明授权
    • Reduced latency row selection circuit and method
    • 减少延迟行选择电路和方法
    • US06356503B1
    • 2002-03-12
    • US09510692
    • 2000-02-23
    • Richard Roy
    • Richard Roy
    • G11C800
    • G11C8/18G11C8/10
    • A reduced latency row selection circuit and method for selecting a wordline in a memory instance. Capacitance associated with row select path is de-coupled from capacitance associated with row de-select path such that both forward path delay and de-selection path delay may be optimized independently. Clock-to-wordline latency is reduced by a rapid six-stage structure that may be implemented using various logic gates. A row pre-decoder portion generates a decoded wordline clock (DXC) signal based on a row decode select clock (XC) signal and a portion of pre-decoded row address signals. The DXC signal is used by a row decoder portion for generating a wordline select (XWL) signal based on another portion of the address signals. Circuitry is provided for releasing the selected wordline in the memory upon receiving a wordline shutdown clock signal generated responsive to signals provided by dummy wordline and dummy read bitline structures disposed in the memory.
    • 用于选择存储器实例中的字线的减少延迟行选择电路和方法。 与行选择路径相关联的电容与与行去选择路径相关联的电容解耦耦合,使得前向路径延迟和解选路径延迟可以独立地优化。 通过可以使用各种逻辑门来实现的快速六级结构来减少时钟到字线延迟。 行预解码器部分基于行解码选择时钟(XC)信号和预解码行地址信号的一部分生成解码字线时钟(DXC)信号。 DXC信号由行解码器部分用于基于地址信号的另一部分生成字线选择(XWL)信号。 提供电路,用于在接收到响应由设置在存储器中的伪字线和伪读位线结构提供的信号产生的字线关闭时钟信号时释放存储器中的选定字线。
    • 14. 发明授权
    • State maintenance pulsing for a memory device
    • 用于存储设备的状态维护脉冲
    • US07379381B1
    • 2008-05-27
    • US11175057
    • 2005-07-05
    • Richard RoyFarid Nemati
    • Richard RoyFarid Nemati
    • G11C8/00
    • G11C11/404G11C11/406G11C11/40622
    • State maintenance of a memory cell and, more particularly, state maintenance pulsing of identified memory cells more frequently than other memory cells, is described. A memory array includes an array of memory cells. State maintenance circuitry is coupled to the array of memory cells. The state maintenance circuitry is configured to select between a first restore address and a second restore address. In a given operation cycle, the first restore address is associated with a first line in the array of memory cells, and the second restore address is associated with a second line in the array of memory cells. The first line has first memory cells coupled thereto. The second line has second memory cells coupled thereto. The first memory cells are capable of passing a threshold retention time with a first frequency of restore cycling. The second memory cells are capable of passing the threshold retention time with a second frequency of restore cycling. The second frequency of restore cycling is greater than the first frequency of restore cycling.
    • 描述了存储器单元的状态维护,更具体地,描述了比其他存储器单元更频繁地状态维持所标识的存储器单元的脉冲。 存储器阵列包括存储器单元阵列。 状态维护电路耦合到存储器单元阵列。 状态维护电路被配置为在第一恢复地址和第二恢复地址之间进行选择。 在给定的操作周期中,第一恢复地址与存储器单元阵列中的第一行相关联,并且第二恢复地址与存储器单元阵列中的第二行相关联。 第一行具有耦合到其上的第一存储单元。 第二行具有与其耦合的第二存储单元。 第一存储器单元能够以第一恢复循环频率通过阈值保持时间。 第二存储器单元能够以第二恢复循环频率通过阈值保持时间。 恢复循环的第二个频率大于恢复循环的第一个频率。
    • 15. 发明授权
    • Bitline shielding for thyristor-based memory
    • 基于晶闸管的存储器的位线屏蔽
    • US07319622B1
    • 2008-01-15
    • US11174813
    • 2005-07-05
    • Richard Roy
    • Richard Roy
    • G11C7/00
    • G11C7/02G11C5/025G11C7/12G11C7/18G11C2211/5614
    • Method and apparatus for writing and reading information to and from a memory cell. For a read, a write path is used to electrically shield at least one adjacent bitline from a bitline associated with the memory cell to be read, and the memory cell is read while the at least one adjacent bitline is electrically shielded from the bitline associated with the memory cell being read. For a write, the write path is used to electrically shield at the least one adjacent bitline from a bitline associated with a memory cell to be written to; memory cells coupled to a wordline are read and buffered; and the memory cell is written to while the at least one adjacent bitline is electrically shielded from the writing to the memory cell.
    • 用于向存储器单元写入和读取信息的方法和装置。 对于读取,写入路径用于将电子屏蔽来自与要读取的存储器单元相关联的位线的至少一个相邻位线,并且读取存储器单元,同时将至少一个相邻位线与与...相关联的位线电屏蔽 正在读取存储单元。 对于写入,写入路径用于在与要写入的存储器单元相关联的位线的至少一个相邻位线处电屏蔽; 耦合到字线的存储单元被读取和缓冲; 并且所述存储单元被写入,而所述至少一个相邻位线与所述存储单元的写入电屏蔽。
    • 17. 发明授权
    • Centrally decoded divided wordline (DWL) memory architecture
    • 集中解码分割字线(DWL)内存架构
    • US06236618B1
    • 2001-05-22
    • US09542033
    • 2000-04-03
    • Richard Roy
    • Richard Roy
    • G11C800
    • G11C8/14
    • A divided wordline memory architecture for memory compilers wherein a main memory array is organized into a plurality of local memory arrays. A plurality of local wordline decoders are provided such that each local memory array is associated with a local wordline decoder for selecting local wordline segments. Main wordline signals are generated based on a first portion of wordline address signals in a main wordline decoder provided as an integrated centrally located decoder structure. A combination of Plane signals, Set signals, or both, which are generated in the integrated centrally located decoder structure, are provided to the local wordline decoder in conjunction with a portion of the main wordline signals for selecting a local wordline segment based on a select main wordline signal and one of a select Plane signal, a select Set signal, or a combination of both.
    • 一种用于存储器编译器的分割字线存储器架构,其中主存储器阵列被组织成多个本地存储器阵列。 提供多个本地字线解码器,使得每个本地存储器阵列与用于选择本地字线段的本地字线解码器相关联。 主字线信号基于作为集成的中央定位的解码器结构提供的主字线解码器中的字线地址信号的第一部分生成。 在集成的位于中心的解码器结构中生成的平面信号,设置信号或两者的组合,与主字线信号的一部分相结合地提供给本地字线解码器,用于基于选择来选择本地字线段 主字线信号和选择平面信号之一,选择设置信号或两者的组合。