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11. 发明申请

US20140078254A1 Method and Apparatus of Motion and Disparity Vector Prediction and Compensation for 3D Video Coding 审中-公开
标题翻译： 3D视频编码的运动和视差矢量预测和补偿的方法和装置
公开(公告)号：US20140078254A1
公开(公告)日：2014-03-20
申请号：US14115076
申请日：2012-06-08
申请人： Jian-Liang Lin , Yi-Wen Chen , Yu-Pao Tsai , Yu-Wen Huang , Shaw-Min Lei
发明人： Jian-Liang Lin , Yi-Wen Chen , Yu-Pao Tsai , Yu-Wen Huang , Shaw-Min Lei
IPC分类号： H04N13/00 , H04N7/36
CPC分类号： H04N13/161 , H04N19/513 , H04N19/52 , H04N19/58 , H04N19/593 , H04N19/597 , H04N19/70
摘要： A method and apparatus for deriving MV/MVP (motion vector or motion vector predictor) or DV/DVP (disparity vector or disparity vector predictor) associated Skip mode, Merge mode or Inter mode for a block of a current picture in three-dimensional (3D) video coding are disclosed. The 3D video coding may use temporal prediction and inter-view prediction to exploit temporal and inter-view correlation. MV/DV prediction is applied to reduce bitrate associated with MV/DV coding. The MV/MVP or DV/DVP for a block is derived from spatial candidates, temporal candidates and inter-view candidates. For the inter-view candidate, the position of the inter-view co-located block can be located using a global disparity vector (GDV) or warping the current block onto the co-located picture according to the depth information. The candidate can also be derived as the vector corresponding to warping the current block onto the co-located picture according to the depth information.
摘要翻译：用于导出MV / MVP（运动矢量或运动矢量预测器）或DV / DVP（视差矢量或视差矢量预测器）相关联的跳过模式，合并模式或Inter模式用于三维（ 3D）视频编码被公开。 3D视频编码可以使用时间预测和视角间预测来利用时间和视角间的相关性。应用MV / DV预测来减少与MV / DV编码相关的比特率。用于块的MV / MVP或DV / DVP源自空间候选，时间候选和视角间候选。对于视角间候选，可以使用全局视差向量（GDV）来定位视角间同位序列的位置，或者根据深度信息将当前块变形到同位图片上。还可以将候选者导出为对应于根据深度信息将当前块扭曲到同位图片上的向量。

12. 发明授权

US08755437B2 Method and apparatus for derivation of spatial motion vector candidate and motion vector prediction candidate 有权
标题翻译：用于导出空间运动矢量候选和运动矢量预测候选的方法和装置
公开(公告)号：US08755437B2
公开(公告)日：2014-06-17
申请号：US13177808
申请日：2011-07-07
申请人： Jian-Liang Lin , Yi-Wen Chen , Yu-Pao Tsai , Yu-Wen Huang , Shaw-Min Lei
发明人： Jian-Liang Lin , Yi-Wen Chen , Yu-Pao Tsai , Yu-Wen Huang , Shaw-Min Lei
IPC分类号： H04N7/28
CPC分类号： H04N19/513 , H04N19/52
摘要： An apparatus and method for deriving a motion vector predictor are disclosed. In video coding systems, the spatial and temporal redundancy is exploited using spatial and temporal prediction to reduce the information to be transmitted or stored. Motion vector prediction has been used to further conserve the bitrate associated with motion vector coding. In a conventional coding system, a motion vector predictor (MVP) is selected from the spatial MVPs and temporal MVP. The spatial MVP according to a conventional approach is based on motion vectors (MVs) of neighboring blocking pointing to a target reference picture in a given reference list. Embodiments according to the present invention perform the MVP search among an extended search set including MVs pointing to other reference pictures in the given reference list or the other reference list and MVs pointing to the target reference picture in the given reference list or the other reference list. Other aspects of the present invention address the search order of the search set and configuration of neighboring blocks.
摘要翻译：公开了一种用于导出运动矢量预测器的装置和方法。在视频编码系统中，使用空间和时间预测来利用空间和时间冗余来减少要发送或存储的信息。运动矢量预测已被用于进一步节省与运动矢量编码相关的比特率。在常规编码系统中，从空间MVP和时间MVP中选择运动矢量预测器（MVP）。根据常规方法的空间MVP基于指向给定参考列表中的目标参考图片的相邻块的运动矢量（MV）。根据本发明的实施例在包括指定给定参考列表中的其他参考图片的MV的扩展搜索集或另一参考列表中的MVP搜索和指向给定参考列表或另一参考列表中的目标参考图片的MV 。本发明的其它方面解决了搜索集的搜索顺序和相邻块的配置。

13. 发明授权

US09384962B2 Oxygen treatment of replacement work-function metals in CMOS transistor gates 有权
标题翻译： CMOS晶体管栅极中替代工作功能金属的氧化处理
公开(公告)号：US09384962B2
公开(公告)日：2016-07-05
申请号：US13082387
申请日：2011-04-07
申请人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
发明人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
IPC分类号： H01L21/28 , H01L21/02
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7846
摘要： A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.
摘要翻译：提供一种制造金属栅极的方法。该方法包括提供基板。然后，在基板上形成栅极电介质层。在栅极电介质层上形成具有功函数金属层的多层堆叠结构。在多层堆叠结构的至少一层上进行O2气氛处理。在多层堆叠结构上形成导电层。

14. 发明授权

US08816439B2 Gate structure of semiconductor device 有权
标题翻译：半导体器件的栅极结构
公开(公告)号：US08816439B2
公开(公告)日：2014-08-26
申请号：US12907036
申请日：2010-10-19
申请人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
发明人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
IPC分类号： H01L29/76 , H01L27/11
CPC分类号： H01L27/11
摘要： A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.
摘要翻译：半导体器件的栅极结构包括第一低电阻导电层，第二低电阻导电层和设置在第一低电阻导电层和第二低电阻导电层的侧壁之间且直接接触的第一类型导电层。

15. 发明授权

US08472648B2 Miniature MEMS condenser microphone package and fabrication method thereof 有权
标题翻译：微型MEMS电容麦克风封装及其制造方法
公开(公告)号：US08472648B2
公开(公告)日：2013-06-25
申请号：US12813730
申请日：2010-06-11
申请人： Yunlong Wang , Yi-Wen Chen
发明人： Yunlong Wang , Yi-Wen Chen
IPC分类号： H04R25/00
CPC分类号： H04R19/005 , H01L2924/16151 , H01L2924/16152 , Y10T29/49005
摘要： MEMS microphone packages and fabrication methods thereof are disclosed. A MEMS microphone package includes a casing with a conductive part disposed over a substrate, to enclose a cavity. A MEMS acoustic sensing element and an IC chip are disposed inside the cavity. An opening with an acoustic passage connects the cavity to an ambient space. A first ground pad is disposed on a backside of the substrate connecting to the conductive part of the casing through a via hole of the substrate. A second ground pad is disposed on the backside of the substrate connecting to the MEMS acoustic sensing element or the IC chip through an interconnection of the substrate, wherein the first ground pad and the second ground pad are isolated from each other.
摘要翻译：公开了MEMS麦克风封装及其制造方法。 MEMS麦克风封装包括具有设置在基板上方的导电部分以封闭空腔的壳体。 MEMS声学传感元件和IC芯片设置在腔内。具有声通道的开口将空腔连接到环境空间。第一接地焊盘设置在通过基板的通孔连接到壳体的导电部分的基板的背面。第二接地焊盘通过衬底的互连设置在连接到MEMS声学感测元件或IC芯片的衬底的背面上，其中第一接地焊盘和第二接地焊盘彼此隔离。

16. 发明申请

US20120322218A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120322218A1
公开(公告)日：2012-12-20
申请号：US13161591
申请日：2011-06-16
申请人： Chien-Ming LAI , Yi-Wen Chen , Zhi-Cheng Lee , Tong-Jyun Huang , Che-Hua Hsu , Kun-Hsien Lin , Tzung-Ying Lee , Chi-Mao Hsu , Hsin-Fu Huang , Chin-Fu Lin
发明人： Chien-Ming LAI , Yi-Wen Chen , Zhi-Cheng Lee , Tong-Jyun Huang , Che-Hua Hsu , Kun-Hsien Lin , Tzung-Ying Lee , Chi-Mao Hsu , Hsin-Fu Huang , Chin-Fu Lin
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/28088 , H01L21/32134 , H01L21/823842 , H01L29/42376 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/7833
摘要： A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.
摘要翻译：一种制造半导体器件的方法包括以下步骤。首先，提供具有伪栅极电极层的虚拟栅极结构。然后，去除虚拟栅极电极层，以在虚拟栅极结构中形成开口，从而暴露在伪栅极电极层下面的下面的层。然后，进行氢氧化铵处理处理以处理伪栅极结构。之后，将金属材料填充到开口中。

17. 发明申请

US20100246877A1 Miniature MEMS Condenser Microphone Package and Fabrication Method Thereof 有权
标题翻译：微型MEMS冷凝器麦克风包装和制造方法
公开(公告)号：US20100246877A1
公开(公告)日：2010-09-30
申请号：US12813730
申请日：2010-06-11
申请人： Yunlong Wang , Yi-Wen Chen
发明人： Yunlong Wang , Yi-Wen Chen
IPC分类号： H04R1/04 , H04R31/00
CPC分类号： H04R19/005 , H01L2924/16151 , H01L2924/16152 , Y10T29/49005
摘要： MEMS microphone packages and fabrication methods thereof are disclosed. A MEMS microphone package includes a casing with a conductive part disposed over a substrate, to enclose a cavity. A MEMS acoustic sensing element and an IC chip are disposed inside the cavity. An opening with an acoustic passage connects the cavity to an ambient space. A first ground pad is disposed on a backside of the substrate connecting to the conductive part of the casing through a via hole of the substrate. A second ground pad is disposed on the backside of the substrate connecting to the MEMS acoustic sensing element or the IC chip through an interconnection of the substrate, wherein the first ground pad and the second ground pad are isolated from each other.
摘要翻译：公开了MEMS麦克风封装及其制造方法。 MEMS麦克风封装包括具有设置在基板上方的导电部分以封闭空腔的壳体。 MEMS声学传感元件和IC芯片设置在腔内。具有声通道的开口将空腔连接到环境空间。第一接地焊盘设置在通过基板的通孔连接到壳体的导电部分的基板的背面。第二接地焊盘通过衬底的互连设置在连接到MEMS声学感测元件或IC芯片的衬底的背面上，其中第一接地焊盘和第二接地焊盘彼此隔离。

18. 发明申请

US20100059833A1 METAL GATE TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：金属栅极晶体管及其制造方法
公开(公告)号：US20100059833A1
公开(公告)日：2010-03-11
申请号：US12208352
申请日：2008-09-11
申请人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Cheng-Hsien Chou , Tian-Fu Chiang , Chien-Ming Lai , Yi-Wen Chen , Jung-Tsung Tseng , Chien-Ting Lin , Guang-Hwa Ma
发明人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Cheng-Hsien Chou , Tian-Fu Chiang , Chien-Ming Lai , Yi-Wen Chen , Jung-Tsung Tseng , Chien-Ting Lin , Guang-Hwa Ma
IPC分类号： H01L47/00 , H01L21/8236
CPC分类号： H01L29/6656 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66636 , H01L29/7848
摘要： A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.
摘要翻译：公开了一种用于制造金属栅极晶体管的方法。首先，提供具有第一晶体管区域和第二晶体管区域的衬底。接下来，在基板上形成层叠膜，其中层叠膜包括至少一个高k电介质层和第一金属层。图案化层叠的膜以在第一晶体管区域和第二晶体管区域中形成多个栅极，在栅极上形成电介质层，并且介电层的一部分被平坦化，直到到达每个栅极的顶部。第一金属层从第二晶体管区域的栅极去除，并且第二金属层形成在电介质层的表面上，每个栅极用于在第一晶体管区域和第二晶体管区域中形成多个金属栅极。

19. 发明申请

US20090242997A1 METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE AND STRUCTURE OF STATIC RANDOM ACCESS MEMORY 有权
标题翻译：制造半导体结构和静态随机存取存储器结构的方法
公开(公告)号：US20090242997A1
公开(公告)日：2009-10-01
申请号：US12058208
申请日：2008-03-28
申请人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
发明人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L27/11
摘要： A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.
摘要翻译：公开了一种制造半导体结构的方法。提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。第一晶体管和第二晶体管的导电类型不同。同时去除第一和第二伪栅极以形成相应的第一和第二开口。在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。第一开口中的第一低电阻导电层和第二导电层被去除。然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填满第一开口。

20. 发明授权

US06333277B1 Method for reducing non-homogenous density during forming process of borophosphosilicate glass layer 失效
标题翻译：在硼磷硅酸盐玻璃层成型过程中降低非均匀密度的方法
公开(公告)号：US06333277B1
公开(公告)日：2001-12-25
申请号：US09725069
申请日：2000-11-29
申请人： Keng-Chu Lin , Hsiao-Wen Lee , Hou-Hung Chou , Yi-Wen Chen
发明人： Keng-Chu Lin , Hsiao-Wen Lee , Hou-Hung Chou , Yi-Wen Chen
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , H01L21/02271 , H01L21/31625
摘要： A method for reducing non-homogenous density during forming process of borophosphosilicate glass layer, at least includes following basic steps: delivers an oxygen gas through a gas pipeline into a chamber, and also delivers a tetraethyl-orthosilicate gas, a tri-ethyl-borate gas and a tri-ethyl-phosphate gas through a reactant pipeline into a bypass pipeline to let the chamber is filled by only the oxygen gas, wherein the bypass pipeline is adjacent to the chamber; whenever flow of the oxygen gas in both the gas pipeline and the chamber is stable and flow of both the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas in the reactant pipeline also is stable, closes the reactant pipeline and then delivers the tetraethyl-orthosilicate gas, the tri-ethyl-borate gas and the tri-ethyl-phosphate gas into the chamber; and performs at least a process to form a borophosphosilicate glass layer on a wafer that locates inside the chamber. Obviously, one essential characteristic of the method is reactants are delivered into chamber after flow of reactants are stable, and then non-homogenous density of borophosphosilicate glass layer that induced by unstable flow is effectively prevented.
摘要翻译：一种在硼磷硅酸盐玻璃层形成过程中降低非均匀密度的方法至少包括以下基本步骤：将氧气通过气体管道输送到室中，并且还输送四乙基原硅酸盐气体，三乙基硼酸盐气体和三乙基磷酸盐气体通过反应物管线进入旁路管道，以使腔室仅被氧气填充，其中旁路管道与腔室相邻; 只要气体管道和腔室中的氧气流都稳定，反应物管道中的四乙基原硅酸盐，三乙基硼酸盐气体和三乙基磷酸盐气体的流动也是稳定的，关闭反应物管道，然后将四乙基原硅酸气体，三乙基硼酸盐气体和三乙基磷酸盐气体输送到室中; 并且至少执行在位于室内的晶片上形成硼磷硅酸盐玻璃层的工艺。显然，该方法的一个基本特征是在反应物流动稳定后将反应物输送到室中，然后有效地防止了由不稳定流动引起的不均匀的硼磷硅酸盐玻璃层密度。

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