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11. 发明授权

US06252257B1 Isolating wall between power components 失效
标题翻译：功率元件之间的隔离墙
公开(公告)号：US06252257B1
公开(公告)日：2001-06-26
申请号：US09081051
申请日：1998-05-19
申请人： Franck Duclos , Fabien Rami
发明人： Franck Duclos , Fabien Rami
IPC分类号： H01L2974
CPC分类号： H01L27/0817 , H01L21/761 , H01L27/0814
摘要： The present invention relates to an isolating wall for separating elementary components formed in different wells, a component located in at least one of the wells being capable of operating with a high current density. The isolating wall exhibits in its median portion a concentration of carriers higher than 1016 atoms/cm3. Preferably, the width of the openings from which the dopant diffusions are formed in the upper and lower surfaces of the substrate is higher than 1.3 times the half-thickness of the substrate.
摘要翻译：本发明涉及用于分离在不同孔中形成的基本成分的隔离壁，位于至少一个井中的能够以高电流密度运行的部件。隔离壁在其中间部分表现出高于1016原子/ cm3的载流子浓度。优选地，在衬底的上表面和下表面中形成掺杂剂扩散的开口的宽度高于衬底半厚度的1.3倍。

12. 发明授权

US5672694A .beta.-sarcoglycan nucleic acid sequence, and nucleic acid probes 失效
标题翻译： β-聚糖核酸序列和核酸探针
公开(公告)号：US5672694A
公开(公告)日：1997-09-30
申请号：US547182
申请日：1995-10-24
申请人： Kevin P. Campbell , Leland Lim , Franck Duclos , Yoshihide Sunada , Jacques S. Beckmann , Odile Broux , Fernando M. S. Tome , Michel Fardeau , Charles E. Jackson
发明人： Kevin P. Campbell , Leland Lim , Franck Duclos , Yoshihide Sunada , Jacques S. Beckmann , Odile Broux , Fernando M. S. Tome , Michel Fardeau , Charles E. Jackson
IPC分类号： A61K39/00 , C07K14/47 , C12Q1/68 , C07H19/00 , C07H21/02 , C07H21/04
CPC分类号： C07K14/4707 , C12Q1/6883 , A61K39/00 , C12Q2600/156 , C12Q2600/172
摘要： Disclosed herein is a substantially pure nucleic acid sequence encoding a mammalian 43 kDa non-dystrophin component (.beta.-sarcoglycan) of the dystrophin-glycoprotein complex. Also disclosed are immunogenic peptides which, when used to immunize a mammal, stimulate the production of antibodies which bind specifically to the .beta.-sarcoglycan. Mutations in the .beta.-sarcoglycan gene which are associated with autosomal recessive limb-girdle muscular dystrophy are also disclosed. The identification of such mutations enables the design of nucleic acid probes which hybridize specifically to a mutant form of .beta.-sarcoglycan, or the complement thereof, but not to the DNA of the wild-type form of the gene (or the complement thereof), under stringent hybridization conditions. Such probes are useful, for example, in connection with the diagnosis of autosomal recessive limb-girdle muscular dystrophy. In addition, the identification of such mutations enables the diagnosis of autosomal recessive limb-girdle muscular dystrophy through the use of direct DNA sequencing techniques.
摘要翻译：本文公开了编码肌营养不良蛋白 - 糖蛋白复合物的哺乳动物43kDa非肌营养不良蛋白成分（β-卡非糖）的基本上纯的核酸序列。还公开了免疫原性肽，其当用于免疫哺乳动物时，刺激特异性结合β-糖聚糖的抗体的产生。还公开了与常染色体隐性遗传性肢体肌营养不良症相关的β - 肌凝蛋白基因的突变。这种突变的鉴定使得能够设计与β-丝裂核糖苷或其补体的突变形式特异性杂交的核酸探针，而不与野生型形式的基因（或其补体）的DNA杂交，在严格的杂交条件下。这样的探针可用于例如与常染色体隐性性腰带肌营养不良症的诊断有关。此外，通过使用直接DNA测序技术，鉴定这种突变能够诊断常染色体隐性的腰带肌营养不良症。

13. 发明授权

US06963087B2 Pulsed bistable bidirectional electronic switch 有权
标题翻译：双脉冲双向电子开关
公开(公告)号：US06963087B2
公开(公告)日：2005-11-08
申请号：US10221851
申请日：2001-12-28
申请人： Sophie Gimonet , Franck Duclos
发明人： Sophie Gimonet , Franck Duclos
IPC分类号： H01L29/747 , H01L29/417
CPC分类号： H01L29/747
摘要： The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T1, T2) provided with a first gate terminal (M3), whereof the main electrode (A1) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T3) comprising an upper layer (4) of the vertical bidirectional switch, a first P-type region (11), and a second N-type region (12) formed in the first region; a second gate terminal (G1) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G3) and to the alternating current supply (VAC).
摘要翻译：本发明涉及一种脉冲双稳态双向电子开关，其包括由基板（1）形成的单片半导体电路，其中后表面（A 2）涂覆有连接到地球的金属化层。所述电路包括设置有第一栅极端子（M 3）的垂直双向开关（T 1，T 2），其前表面侧的主电极（A 1）连接到负载和交流电源 ; 包括垂直双向开关的上层（4）的水平晶闸管（T 3），形成在第一区域中的第一P型区域（11）和第二N型区域（12）连接到第一和第二区域中的一个的第二栅极端子（G 1），另一个连接到地球。电容器（C）连接到第一栅极端子（G 3）和交流电源（VAC）。

14. 发明授权

US06559515B1 Insulating wall between power components 有权
标题翻译：功率元件之间的绝缘墙
公开(公告)号：US06559515B1
公开(公告)日：2003-05-06
申请号：US09391636
申请日：1999-09-07
申请人： Franck Duclos
发明人： Franck Duclos
IPC分类号： H01L2900
CPC分类号： H01L27/0814 , H01L21/761
摘要： An insulating wall of a second conductivity type intended for separating elementary components formed in different wells of a semiconductive layer of a first conductivity type, a component located in one at least one of the wells being capable of operating with a high current density. The insulating wall includes at least two elementary insulating walls separated by a portion of the wafer material and, in operation, this portion is connected to a reference potential.
摘要翻译：第二导电类型的绝缘壁，用于分离形成在第一导电类型的半导体层的不同阱中的元素，位于一个至少一个阱中的元件能够以高电流密度操作。绝缘壁包括由晶片材料的一部分分开的至少两个基本绝缘壁，并且在操作中，该部分连接到参考电位。

15. 发明授权

US06380565B1 Bidirectional switch with increased switching breakdown voltage 有权
标题翻译：双向开关具有增加的开关击穿电压
公开(公告)号：US06380565B1
公开(公告)日：2002-04-30
申请号：US09634077
申请日：2000-08-08
申请人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
发明人： Franck Duclos , Jean-Michel Simonnet , Olivier Ladiray
IPC分类号： H01L29747
CPC分类号： H01L29/747
摘要： A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.
摘要翻译：一种形成在具有前表面和后表面的第一导电类型的半导体衬底中的单片双向开关，包括第一主垂直晶闸管，其第二导电类型的后表面层，第二主垂直晶闸管，其后表面层是第一导电类型。用于触发第一和第二主晶闸管中的每一个的结构被布置成面对与两个主晶闸管相互远离的区域，其相邻部分对应于对于第一主晶闸管，阴极之间的短路面积并形成阴极栅极。

16. 发明授权

US06369640B1 Zero crossing control structure for a bidirectional switch with a stable threshold 有权
标题翻译：具有稳定阈值的双向开关的过零点控制结构
公开(公告)号：US06369640B1
公开(公告)日：2002-04-09
申请号：US09628199
申请日：2000-07-28
申请人： Franck Duclos , Olivier Ladiray , Jean-Michel Simonnet
发明人： Franck Duclos , Olivier Ladiray , Jean-Michel Simonnet
IPC分类号： H03K1713
CPC分类号： H02M1/083 , H03K17/136
摘要： A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.
摘要翻译：一种双向开关的过零点控制电路，包括双向开关的栅极与双向开关的主参考端并联连接的两个互补型晶体管，双向开关的栅极经由第一电阻器，并且晶体管的每个控制端子经由高值的第二电阻器连接到双向开关的第二主端子，齐纳二极管根据偏压适配于介于第二电阻器和每个控制端子之间当超过齐纳阈值时，开启每个晶体管。

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