专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US6031248A Hybrid sensor pixel architecture 失效
标题翻译：混合传感器像素架构
公开(公告)号：US6031248A
公开(公告)日：2000-02-29
申请号：US67657
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/46
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。

12. 发明授权

US5893948A Method for forming single silicon crystals using nucleation sites 失效
标题翻译：使用成核位点形成单晶硅晶体的方法
公开(公告)号：US5893948A
公开(公告)日：1999-04-13
申请号：US630955
申请日：1996-04-05
申请人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
发明人： Norbert H. Nickel , Gregory B. Anderson , Steven E. Ready , James B. Boyce , Ping Mei
IPC分类号： H01L31/04 , C30B13/00 , H01L21/20 , H01L21/336 , H01L29/786 , C30B13/06
CPC分类号： C30B29/06 , C30B13/00 , Y10S117/902
摘要： The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.
摘要翻译：本发明提供了一种在衬底上形成多个单晶硅晶体的方法。该方法在衬底上形成多个成核位点。在覆盖多个硅成核位置的衬底上形成非晶硅层。通过使用激光束熔化非晶硅层，然后结晶以形成多个单晶硅晶体。多个单晶硅晶体中的每一个对应于多个成核位点中的一个。

13. 发明授权

US07710371B2 Variable volume between flexible structure and support surface 失效
标题翻译：柔性结构和支撑表面之间的可变体积
公开(公告)号：US07710371B2
公开(公告)日：2010-05-04
申请号：US11014490
申请日：2004-12-16
申请人： Ping Mei , Jurgen Daniel , James B. Boyce , Kathleen Dore Boyce, legal representative , Jackson Ho , Rachel Lau , Yu Wang
发明人： Ping Mei , Jurgen Daniel , James B. Boyce , Jackson Ho , Rachel Lau , Yu Wang
IPC分类号： G09G3/34 , C25B9/00 , F04B17/00 , B41J2/14 , G02F1/153 , H04R19/00
CPC分类号： C25D5/02 , C23C18/28 , C25D5/56 , H04R19/04
摘要： Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume. Arrays of such cells can be implemented for various applications, such as optical modulators, displays, printheads, and microphones.
摘要翻译：细胞可以包括在诸如聚合物层的柔性结构和支撑表面之间限定的可变体积，其中柔性结构和支撑表面附接在围绕其未连接的第二区域的第一区域中。各种粘合结构可以附接柔性结构和支撑表面。当未拉伸时，柔性结构可以位于支撑表面上的平坦位置。响应于远离支撑表面的拉伸力，柔性结构可以移出平坦位置，从而提供可变的体积。诸如柔性结构的电极，在支撑表面上以及柔性结构上的电极可以具有彼此耦合并且具有可变体积的电荷水平。支撑结构可以包括具有提供电极和外部电路之间的信号路径的信号电路的器件层。一个或多个管道可以提供与每个电池的可变体积的流体连通。可以对诸如光学调制器，显示器，打印头和麦克风的各种应用来实现这种单元的阵列。

14. 发明授权

US06236831B1 Method and apparatus of recycling office paper 有权
标题翻译：办公用纸回收方法和设备
公开(公告)号：US06236831B1
公开(公告)日：2001-05-22
申请号：US09342867
申请日：1999-06-29
申请人： Ping Mei , Jaan Noolandi , James B. Boyce
发明人： Ping Mei , Jaan Noolandi , James B. Boyce
IPC分类号： G03G1500
CPC分类号： G03G21/00 , B41J29/36 , B41M7/0009
摘要： A method and apparatus for recycling marking surfaces such as office paper is described. The system scans a marking surface, determines the location of printing on the marking surface and deposits erasing material directly over the printing. Because the distribution of erasing material is confined to the printed areas, the use of erasing material is minimized. The described system can be easily adapted for use in traditional copying systems to recycle paper.
摘要翻译：描述了用于回收标记表面如办公纸的方法和设备。系统扫描标记表面，确定打印表面上的打印位置，并将擦除材料直接沉积在打印上。由于擦除材料的分布局限于打印区域，所以使用擦除材料最小化。所描述的系统可以容易地适用于传统的复印系统以回收纸张。

15. 发明授权

US6011531A Methods and applications of combining pixels to the gate and data lines for 2-D imaging and display arrays 失效
标题翻译：将像素组合到用于2-D成像和显示阵列的栅极和数据线的方法和应用
公开(公告)号：US6011531A
公开(公告)日：2000-01-04
申请号：US734770
申请日：1996-10-21
申请人： Ping Mei , James B. Boyce , Robert A. Street , David K. Fork
发明人： Ping Mei , James B. Boyce , Robert A. Street , David K. Fork
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , G06F17/30
CPC分类号： G09G3/2085 , G09G3/20 , H04N3/1562 , G09G2300/0465 , G09G2300/08 , G09G2300/0804 , G09G2310/0262
摘要： This invention relates to methods and applications of forming clusters of pixels in 2-D sensing and display arrays. Using TFT switches having more than one predetermined electrical characteristics. The array formed according to these teachings being used in sensing, displaying, adjusting resolution, color selection, image processing, object recognition and filtering.
摘要翻译：本发明涉及在二维感测和显示阵列中形成像素簇的方法和应用。使用具有多于一个预定电特性的TFT开关。根据这些教导形成的阵列用于感测，显示，调整分辨率，颜色选择，图像处理，对象识别和滤波。

16. 发明授权

US5821135A Methods for and applications of making buried structures in semiconductor thin films 失效
标题翻译：在半导体薄膜中制作掩埋结构的方法和应用
公开(公告)号：US5821135A
公开(公告)日：1998-10-13
申请号：US730981
申请日：1996-10-16
申请人： Ping Mei , Gregory B. Anderson , James B. Boyce , David K. Fork , Richard I. Johnson
发明人： Ping Mei , Gregory B. Anderson , James B. Boyce , David K. Fork , Richard I. Johnson
IPC分类号： H01L21/20 , H01L21/00 , H01L21/84
CPC分类号： H01L21/2026
摘要： A transparent substrate as formed on its front side a layer of amorphous silicon. A laser beam is used to irradiate through the backside of the transparent substrate in order to form buried nucleation sites within the amorphous silicon. The buried nucleation sites which are used as nucleation seeds are then used during a front side crystallization process in order to form large single silicon crystals over the substrate surface.
摘要翻译：在其正面形成非晶硅层的透明基板。使用激光束照射穿过透明基板的背面，以便在非晶硅内形成掩埋的成核位置。然后在前侧结晶过程中使用用作成核种子的掩埋成核位点，以便在基材表面上形成大的单硅晶体。

17. 发明授权

US6051827A Hybrid sensor pixel architecture with threshold response 失效
标题翻译：具有阈值响应的混合传感器像素结构
公开(公告)号：US6051827A
公开(公告)日：2000-04-18
申请号：US67941
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H01J40/14
CPC分类号： H01L27/14609
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Threshold response is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供阈值响应。

18. 发明授权

US06019796A Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage 失效
标题翻译：制造具有降低的寄生电容和降低的馈通电压的薄膜晶体管的方法
公开(公告)号：US06019796A
公开(公告)日：2000-02-01
申请号：US960025
申请日：1997-10-29
申请人： Ping Mei , Rene A. Lujan , James B. Boyce , Christopher L. Chua , Michael G. Hack
发明人： Ping Mei , Rene A. Lujan , James B. Boyce , Christopher L. Chua , Michael G. Hack
IPC分类号： H01L21/223 , H01L21/225 , H01L21/266 , H01L21/336 , H01L27/144 , H01L27/146 , H01L29/786 , H01L31/0216 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/223 , H01L21/2236 , H01L21/2254 , H01L21/2255 , H01L21/266 , H01L27/1443 , H01L27/14603 , H01L29/66757 , H01L29/66765 , H01L29/78669 , H01L31/02162 , H01L31/02165 , Y10S438/94
摘要： A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
摘要翻译：提供了不具有源极/栅极或漏极/栅极重叠的制造改进的薄膜晶体管结构的方法。应用激光辅助掺杂技术来制造这种晶体管。使用辐射滤光器，其在光刻波长下对光是透明的，但在激光波长处是反射的或不透明的。消除源极/栅极和漏极/栅极重叠显着降低或消除了源极和栅极之间的寄生电容和馈通电压。可以获得具有高场效应迁移率的短沟道a-Si：H薄膜晶体管。提供了改进的像素性能和像素到像素的均匀性。

19. 发明授权

US6005238A Hybrid sensor pixel architecture with linearization circuit 失效
标题翻译：具有线性化电路的混合传感器像素架构
公开(公告)号：US6005238A
公开(公告)日：1999-12-21
申请号：US67942
申请日：1998-04-28
申请人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
发明人： Ping Mei , Andrew J. Moore , Raj B. Apte , Steven E. Ready , Robert A. Street , James B. Boyce
IPC分类号： H01L27/146 , H03F3/08 , H01J40/14
CPC分类号： H01L27/14609 , H03F3/082
摘要： A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.
摘要翻译：用于图像感测的像素电路结构包括光电传感器，放大器，选择器开关和复位开关。放大器可以是用于高增益的单个多晶硅（沟道）晶体管。选择器开关也可以是用于高导电性的单个多晶硅（沟道）晶体管。复位开关可以是用于低漏电流的单个非晶态硅（沟道）晶体管。光传感器和放大器可以连接到共享偏置线，或者可以分别连接到单独的偏置线和驱动线。选择器和复位开关可以连接到共享数据线，或者可以分别连接到单独的数据和复位线。激光结晶和再氢化技术非常适合于获得本文所述的装置。提供输出响应的线性化。

20. 发明授权

US5871826A Proximity laser doping technique for electronic materials 失效
标题翻译：电子材料接近激光掺杂技术
公开(公告)号：US5871826A
公开(公告)日：1999-02-16
申请号：US655549
申请日：1996-05-30
申请人： Ping Mei , Rene A. Lujan , James B. Boyce
发明人： Ping Mei , Rene A. Lujan , James B. Boyce
IPC分类号： H01L21/20 , H01L21/22 , H01L21/223 , H01L21/225 , H01L21/268 , H01L21/30 , H01L21/336 , H01L21/8238 , B05D3/06
CPC分类号： H01L29/66757 , H01L21/22 , H01L21/2225 , H01L21/223 , H01L21/2233 , H01L21/2252 , H01L21/3003 , H01L21/823871 , H01L21/2026
摘要： This invention relates to a method of altering the electrical characteristics of a material through a laser ablation process. It can achieve high doping levels and shallow junctions at low temperatures, which are desirable in the fabrication of thin film transistors.
摘要翻译：本发明涉及通过激光烧蚀工艺改变材料的电特性的方法。它可以在低温下实现高掺杂水平和浅结，这在薄膜晶体管的制造中是期望的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式