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11. 发明授权

US5556501A Silicon scavenger in an inductively coupled RF plasma reactor 失效
标题翻译：电感耦合RF等离子体反应器中的硅清除剂
公开(公告)号：US5556501A
公开(公告)日：1996-09-17
申请号：US41796
申请日：1993-04-01
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Y. Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence C. Lei , Masato M. Toshima , Gerald Z. Yin
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Y. Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence C. Lei , Masato M. Toshima , Gerald Z. Yin
IPC分类号： C23C16/509 , H01J37/32 , H01L21/311 , H05H1/46 , C23F1/02
CPC分类号： H01J37/32871 , C23C16/509 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H05H1/46 , H01F2029/143
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

12. 发明授权

US06440866B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06440866B1
公开(公告)日：2002-08-27
申请号：US09595750
申请日：2000-06-16
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

13. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

14. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

15. 发明授权

US5770099A Plasma etch apparatus with heated scavenging surfaces 失效
公开(公告)号：US5770099A
公开(公告)日：1998-06-23
申请号：US503467
申请日：1995-07-18
申请人： Michael Rice , Jeffrey Marks , David W. Groechel , Nicolas J. Bright
发明人： Michael Rice , Jeffrey Marks , David W. Groechel , Nicolas J. Bright
IPC分类号： C23F4/00 , B44C1/22 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00 , H01L21/00
CPC分类号： H01J37/32871 , H01J37/32082 , H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J2237/3343 , H01J2237/3346 , Y10S438/909
摘要： The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

16. 发明授权

US5477975A Plasma etch apparatus with heated scavenging surfaces 失效
公开(公告)号：US5477975A
公开(公告)日：1995-12-26
申请号：US138060
申请日：1993-10-15
申请人： Michael Rice , Jeffrey Marks , David W. Groechel , Nicolas J. Bright
发明人： Michael Rice , Jeffrey Marks , David W. Groechel , Nicolas J. Bright
IPC分类号： C23F4/00 , B44C1/22 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32871 , H01J37/32082 , H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J2237/3343 , H01J2237/3346 , Y10S438/909
摘要： The invention is embodied in a method of operating a plasma etch reactor, consisting of introducing a gas into the reactor which disassociates as a plasma into an etch species which etches oxide films on a work piece in the reactor and a non-etching species combinable with the etch species into an etch-preventing polymer condensable onto the work piece below a characteristic deposition temperature, providing an interior wall comprising a material which scavenges the etching species, and maintaining a temperature of the interior wall above the deposition temperature.

17. 发明授权

US6053801A Substrate polishing with reduced contamination 有权
标题翻译：底物抛光，污染减少
公开(公告)号：US6053801A
公开(公告)日：2000-04-25
申请号：US309182
申请日：1999-05-10
申请人： Jay D. Pinson , Nitin Shah , David W. Groechel , Joe Waidl
发明人： Jay D. Pinson , Nitin Shah , David W. Groechel , Joe Waidl
IPC分类号： B08B17/02 , B24B53/007 , B24B53/017 , B24B57/02 , B24B55/12
CPC分类号： B24B53/017 , B08B17/02 , B24B57/02
摘要： Systems and methods for polishing a substrate with reduced contamination are described. A rinse arm has one or more nozzles configured to direct rinse fluid toward a polishing surface for polishing a substrate. The rinse arm further includes a fluid dispenser configured to direct rinse fluid to one or more surfaces of the rinse arm in proximity to the polishing surface and exposed to airborne slurry particles generated from slurry on the polishing surface. By maintaining the atmosphere in the vicinity of the exposed rinse arm surfaces at an elevated relative humidity level, airborne slurry particles adhering to the exposed rinse arm surfaces remain in suspension and, therefore, may be easily cleaned, e.g., during a high pressure rinse cycle. This feature reduces the likelihood that slurry particles will accumulate on exposed surfaces of the polishing apparatus and flake off while a substrate is being polished, reducing the likelihood of substrate defects caused by such slurry contamination.
摘要翻译：描述了用于抛光具有降低的污染物的基底的系统和方法。冲洗臂具有一个或多个喷嘴，其构造成将冲洗流体引向研磨表面以抛光基底。冲洗臂还包括流体分配器，其配置成将冲洗流体引导到靠近抛光表面的冲洗臂的一个或多个表面，并暴露于由抛光表面上的浆料产生的空气传播的浆料颗粒。通过在升高的相对湿度水平下保持暴露的冲洗臂表面附近的气氛，附着在暴露的冲洗臂表面上的气载浆料颗粒保持悬浮状态，因此可以容易地清洁，例如在高压漂洗循环。该特征降低了浆料颗粒在抛光装置的暴露表面上积聚的可能性，并且在抛光衬底时剥落，从而降低了由这种浆料污染引起的衬底缺陷的可能性。

18. 发明授权

US5292399A Plasma etching apparatus with conductive means for inhibiting arcing 失效
标题翻译：具有用于抑制电弧放电的导电装置的等离子体蚀刻装置
公开(公告)号：US5292399A
公开(公告)日：1994-03-08
申请号：US819573
申请日：1992-01-08
申请人： Terrance Y. Lee , Fred C. Redeker , Petru N. Nitescu , Robert J. Steger , David W. Groechel , Semyon Sherstinsky , Maya Shendon , Samuel Luong
发明人： Terrance Y. Lee , Fred C. Redeker , Petru N. Nitescu , Robert J. Steger , David W. Groechel , Semyon Sherstinsky , Maya Shendon , Samuel Luong
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L21/68721 , H01L21/67069 , Y10S156/915
摘要： An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.
摘要翻译：公开了用于半导体晶片的等离子体蚀刻的改进的等离子体蚀刻装置。该改进包括导电装置，用于抑制积聚在装置内的rf电位的构件上的一个或多个不导电保护表面上的电荷的电弧，例如支撑被蚀刻的晶片并将rf电位提供给它的金属基座，以及夹紧环机构，其将晶片夹持到基座。导电装置可以包括延伸穿过一个或多个保护表面的一个或多个导电插塞或围绕金属基座的顶表面上的晶片的导电环。导电材料选自碳; 硅化物氮化钛; 硬质合金以及掺杂硅的半导体，以提供约0.001至约20欧姆 - 厘米的电阻率。

19. 发明授权

US06623596B1 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US06623596B1
公开(公告)日：2003-09-23
申请号：US09523824
申请日：2000-03-13
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： C23F100
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23G2200/06 , A23L2/60 , A23L9/12 , A23L19/115 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01J2237/3345 , H01J2237/3346 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.
摘要翻译：一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。

20. 发明授权

US5021121A Process for RIE etching silicon dioxide 失效
标题翻译： RIE蚀刻二氧化硅的工艺
公开(公告)号：US5021121A
公开(公告)日：1991-06-04
申请号：US481135
申请日：1990-02-16
申请人： David W. Groechel , Brad Taylor , John R. Henri , Naomi Obinata
发明人： David W. Groechel , Brad Taylor , John R. Henri , Naomi Obinata
IPC分类号： C23F4/00 , C03C15/00 , G01Q30/16 , G01Q70/00 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： C03C15/00 , H01L21/31116
摘要： An improved RIE process is disclosed for etching one or more openings in a layer of an oxide of silicon on a semiconductor wafer characterized by a contact angle of at least 80.degree., with respect to the plane of the oxide layer, and highly selective to silicon which comprises flowing an inert gas and CHF.sub.3 into an RIE chamber while maintaining respective gas flows within a range of from about 15 to about 185 sccm of inert gas and from about 15 to about 60 sccm of CHF.sub.3, with a total gas flow not exceeding about 200 sccm, and a ratio of inert gas to CHF.sub.3 ranging from about 1:1 to about 10:1. A plasma is maintained in the RIE chamber during the gas flow at a power level within a range of from about 400 to about 1000 watts. In a preferred embodiment, CF.sub.4 gas is also flowed into the RIE chamber within a range of from about 1 to about 10 sccm to control the selectivity of the etch to silicon, and the wafer is immersed in a magnetic field of 1 to 120 gauss during the etching process.

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