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    • 11. 发明授权
    • Key member for use in insertion or removal of a fuel rod of a nuclear
fuel assembly grid
    • 用于插入或取出核燃料组件电网的燃料棒的关键部件
    • US5272743A
    • 1993-12-21
    • US981105
    • 1992-11-24
    • Shuji YamazakiAkihiro KatoMasashi Yoshida
    • Shuji YamazakiAkihiro KatoMasashi Yoshida
    • G21C19/33G21C3/334G21C21/00
    • G21C3/334G21Y2002/302G21Y2004/501Y02E30/40Y10T29/49817Y10T29/49824Y10T29/531
    • A key member, a method for insertion and/or removal of the fuel rods in a nuclear fuel assembly using the key member and a method of disassembling the nuclear fuel assembly using the same key member are disclosed. The key member has first projections and second projections formed on the opposite faces of an elongated key body. In the insertion or removal of the fuel rods or in the disassembling the nuclear fuel assembly, the key member is inserted into the grid and rotated to bring the first projections and the second projections into engagement with the straps of the grids and the springs on the straps to thereby deflect the springs in a direction away from the dimples opposing the springs. In this situation, the insertion and removal of the fuel rods can be carried out. Further, in disassembling the nuclear fuel assembly, space required for inserting the key member into the grids may be ensured by subjecting prescribed portions of control rod-guide pipes and instrumentation pipes to cutting work and bulging the cut ends to move the cut end away from that of the opposing cut ends of the cut piece. The space may be formed by removing the control rod-guide pipes and instrumentation pipes after having formed slits in the pipes.
    • 公开了一种关键部件,使用该键部件在核燃料组件中插入和/或移除燃料棒的方法以及使用相同的关键部件拆卸核燃料组件的方法。 键构件具有形成在细长键体的相对面上的第一突起和第二突起。 在插入或移除燃料棒或拆卸核燃料组件时,将钥匙件插入格栅并旋转以使第一突起和第二突起与栅格和弹簧的带接合 从而使弹簧沿远离与弹簧相对的凹坑的方向偏转。 在这种情况下,可以进行燃料棒的插入和移除。 此外,在拆卸核燃料组件时,可以通过使控制杆导向管和仪表管的规定部分进行切割加工和使切割端部膨胀以将切割端部移开,从而确保将键构件插入网格所需的空间 切片的相对切割端的那些。 该空间可以通过在管道中形成狭缝之后移除控制杆导向管和仪表管而形成。
    • 12. 发明申请
    • ZOOM LENS SYSTEM
    • 变焦镜头系统
    • US20120212834A1
    • 2012-08-23
    • US13399656
    • 2012-02-17
    • Masashi Yoshida
    • Masashi Yoshida
    • G02B15/14
    • G02B15/173G02B15/14
    • A zoom lens system has a combined focal length fw at the wide angle end and includes, in order from an object side, a first lens group with positive refractive power and combined focal length f1; a second lens group with negative refractive power; a third lens group with positive refractive power; a fourth lens group with positive refractive power; and a fifth lens group with positive refractive power and including, in order from the object side, a negative biconcave lens with focal length f51 and a positive biconvex lens with focal length f52, the negative biconcave lens and the positive biconvex lens disposed with an air space shorter than a center thickness of the negative biconcave lens in between and both surfaces of the positive biconvex lens being aspherical. The system satisfies the following conditions: 13.5
    • 变焦透镜系统在广角端具有组合焦距fw,从物体侧依次包括具有正折光力的第一透镜组和组合焦距f1; 具有负屈光力的第二透镜组; 具有正屈光力的第三透镜组; 具有正屈光力的第四透镜组; 以及具有正屈光力的第五透镜组,并且从物体侧依次包括具有焦距f51的负双凸透镜和焦距为f52的正双凸透镜,负双凸透镜和正双凸透镜配置有空气 空心短于正双凸透镜之间的负双凸透镜的中心厚度,其正面为非球面。 该系统满足以下条件:13.5
    • 14. 发明申请
    • Method of etching the back side of a wafer
    • 刻蚀晶片背面的方法
    • US20100323524A1
    • 2010-12-23
    • US12801594
    • 2010-06-16
    • Masashi Yoshida
    • Masashi Yoshida
    • H01L21/3065
    • B81C1/00801B81C2201/0132B81C2201/053
    • To etch the back side of a wafer, the front side of the wafer is first coated with a positive photoresist to form a protective film. The surface of the protective film is hardened by heating, or by heating and ultraviolet curing. The wafer is then placed in a plasma etching apparatus with the hardened surface of the protective film in contact with an electrode of the etching apparatus, and the back side of the wafer is patterned by plasma etching. When the etching is completed, the front side of the wafer is separated from the electrode and the wafer is removed from the plasma etching apparatus. The hardened positive photoresist prevents the wafer from sticking to the electrode.
    • 为了蚀刻晶片的背面,首先用正性光致抗蚀剂涂覆晶片的正面以形成保护膜。 保护膜的表面通过加热或加热和紫外线固化而硬化。 然后将晶片放置在等离子体蚀刻装置中,其中保护膜的硬化表面与蚀刻装置的电极接触,并且通过等离子体蚀刻对晶片的背面进行图案化。 当蚀刻完成时,晶片的前侧与电极分离,晶片从等离子体蚀刻装置中除去。 硬化的正性光致抗蚀剂防止晶片粘到电极上。
    • 16. 发明授权
    • Semiconductor device fabrication method
    • 半导体器件制造方法
    • US07687296B2
    • 2010-03-30
    • US11513130
    • 2006-08-31
    • Masashi Yoshida
    • Masashi Yoshida
    • H01L21/00
    • G03F7/168
    • Circuit elements, such as aluminum interconnects, and a protective film for protecting these circuit elements are formed on a surface of a semiconductor substrate. Resist is formed covering the protective film. The semiconductor substrate on which the resist covering the protective film is formed is dipped into pure water so as to allow the water to filter into a gap between the resist and semiconductor substrate. Then the semiconductor substrate having the resist thereon is dried in high temperature air, and the resist is adhered to the semiconductor substrate by a sticking function due to the surface tension generated when the water is decreasing. The semiconductor substrate to which the resist is adhered is cleaned by a hydrogen fluoride aqueous solution.
    • 诸如铝互连的电路元件和用于保护这些电路元件的保护膜形成在半导体衬底的表面上。 形成覆盖保护膜的抗蚀剂。 将形成有保护膜的抗蚀剂的半导体基板浸入纯水中,以使水过滤到抗蚀剂和半导体衬底之间的间隙。 然后将其上具有抗蚀剂的半导体衬底在高温空气中干燥,并且由于当水下降时产生的表面张力,抗蚀剂通过粘附功能粘附到半导体衬底。 用氟化氢水溶液清洗附着有抗蚀剂的半导体衬底。
    • 19. 发明申请
    • Semiconductor device fabrication method
    • 半导体器件制造方法
    • US20070072134A1
    • 2007-03-29
    • US11513130
    • 2006-08-31
    • Masashi Yoshida
    • Masashi Yoshida
    • G03F7/16
    • G03F7/168
    • Circuit elements, such as aluminum interconnects, and a protective film for protecting these circuit elements are formed on a surface of a semiconductor substrate. Resist is formed covering the protective film. The semiconductor substrate on which the resist covering the protective film is formed is dipped into pure water so as to allow the water to filter into a gap between the resist and semiconductor substrate. Then the semiconductor substrate having the resist thereon is dried in high temperature air, and the resist is adhered to the semiconductor substrate by a sticking function due to the surface tension generated when the water is decreasing. The semiconductor substrate to which the resist is adhered is cleaned by a hydrogen fluoride aqueous solution.
    • 诸如铝互连的电路元件和用于保护这些电路元件的保护膜形成在半导体衬底的表面上。 形成覆盖保护膜的抗蚀剂。 将形成有保护膜的抗蚀剂的半导体基板浸入纯水中,以使水过滤到抗蚀剂和半导体衬底之间的间隙。 然后将其上具有抗蚀剂的半导体衬底在高温空气中干燥,并且由于当水下降时产生的表面张力,抗蚀剂通过粘附功能粘附到半导体衬底。 用氟化氢水溶液清洗附着有抗蚀剂的半导体衬底。