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    • 11. 发明申请
    • CMOS Image Sensor and Method for Manufacturing the Same
    • CMOS图像传感器及其制造方法
    • US20070145504A1
    • 2007-06-28
    • US11616054
    • 2006-12-26
    • Duk Kim
    • Duk Kim
    • H01L31/0232
    • H01L27/14685H01L27/14621H01L27/14627
    • A CMOS image sensor is provided. The CMOS image sensor can include: a plurality of photodiodes formed on a semiconductor substrate; an interlayer dielectric layer formed on an entire surface of the semiconductor substrate having the plurality of photodiodes; color filter layers including multi-layered blue color filter layers formed on the interlayer dielectric layer corresponding to respective photodiodes of the plurality of photodiodes; a planarization layer formed on the semiconductor substrate having the color filter layers; and microlenses formed on the planarization layer.
    • 提供CMOS图像传感器。 CMOS图像传感器可以包括:形成在半导体衬底上的多个光电二极管; 形成在具有多个光电二极管的半导体衬底的整个表面上的层间绝缘层; 彩色滤光层,包括形成在与多个光电二极管的各个光电二极管相对应的层间电介质层上的多层蓝色滤色层; 形成在具有滤色器层的半导体衬底上的平坦化层; 和形成在平坦化层上的微透镜。