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11. 发明申请

US20080185624A1 STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件存储电容器
公开(公告)号：US20080185624A1
公开(公告)日：2008-08-07
申请号：US12100042
申请日：2008-04-09
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L29/94
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

12. 发明申请

US20060084263A1 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US20060084263A1
公开(公告)日：2006-04-20
申请号：US11245366
申请日：2005-10-05
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

13. 发明授权

US08138490B2 Variable resistance non-volatile memory cells and methods of fabricating same 有权
标题翻译：可变电阻非易失性存储单元及其制造方法
公开(公告)号：US08138490B2
公开(公告)日：2012-03-20
申请号：US12796084
申请日：2010-06-08
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L47/00 , H01L27/108 , H01L29/94 , H01L31/032
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

14. 发明授权

US07662717B2 Method of forming metal layer used in the fabrication of semiconductor device 有权
标题翻译：用于制造半导体器件的金属层的形成方法
公开(公告)号：US07662717B2
公开(公告)日：2010-02-16
申请号：US12100374
申请日：2008-04-09
申请人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
发明人： Hyun-Suk Lee , Hyun-Young Kim , Kwang-Jin Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/4408 , C23C16/45523 , C23C16/509 , H01L21/28556 , H01L21/76843
摘要： A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined time, thereby forming a first metal layer on the semiconductor substrate, using a plasma enhanced chemical vapor deposition (PECVD) method. The hydrogen gas and metal chloride gases are thereafter alternately supplied for a predetermined time while the purge gas is continuously supplied into the chamber, thereby forming a second metal layer on the first metal layer, using a PECVD method. Deterioration of semiconductor devices due to high heat by a conventional CVD method can be prevented using a PECVD method as a low temperature process, thereby improving a production yield.
摘要翻译：在半导体器件的导电区域上形成金属层的方法包括：将包含氢气和金属氯化物复合气体的混合气体以及吹扫气体同时供给到具有密封空间的室中预定时间，从而形成使用等离子体增强化学气相沉积（PECVD）方法在半导体衬底上的第一金属层。然后，将氢气和金属氯化物气体交替供给预定时间，同时将净化气体连续地供应到室中，从而使用PECVD方法在第一金属层上形成第二金属层。使用PECVD法作为低温处理可以防止由于常规CVD法导致的高热导致的半导体器件劣化，从而提高了生产率。

15. 发明申请

US20080308784A1 VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME 有权
标题翻译：可变电阻非挥发性记忆细胞及其制备方法
公开(公告)号：US20080308784A1
公开(公告)日：2008-12-18
申请号：US11848379
申请日：2007-08-31
申请人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
发明人： Gyu-Hwan Oh , Shin-Jae Kang , In-Sun Park , Hyun-Seok Lim , Nak-Hyun Lim , Hyun-Suk Lee
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
摘要翻译：公开了制造集成电路存储单元和集成电路存储单元的方法。可以通过在导电结构的上表面上形成欧姆层并沿着绝缘层中的开口的侧壁的至少一部分远离结构延伸来制造集成电路存储单元。在欧姆层上形成电极层。在绝缘层上形成可变电阻率材料并与电极层电连接。

16. 发明申请

US20060099760A1 Storage capacitors for semiconductor devices and methods of forming the same 有权
标题翻译：用于半导体器件的存储电容器及其形成方法
公开(公告)号：US20060099760A1
公开(公告)日：2006-05-11
申请号：US11266520
申请日：2005-11-03
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

17. 发明申请

US20060014385A1 Method of forming titanium nitride layer and method of fabricating capacitor using the same 有权
标题翻译：形成氮化钛层的方法和使用其制造电容器的方法
公开(公告)号：US20060014385A1
公开(公告)日：2006-01-19
申请号：US11173771
申请日：2005-06-30
申请人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
发明人： Rak-Hwan Kim , Hyun-Seok Lim , Young-Joo Cho , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： C23C16/45529 , C23C16/34 , H01L27/10817 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： A method of fabricating a storage capacitor includes depositing a first titanium nitride layer on a dielectric layer using a chemical vapor deposition technique or an atomic layer deposition technique performed at a first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas at a predetermined flow ratio and depositing a second titanium nitride layer on the first titanium nitride layer using a chemical vapor deposition process performed at a second temperature that is greater than the first temperature with reactant gases of titanium chloride (TiCl4) gas and ammonia (NH3) gas.
摘要翻译：一种制造存储电容器的方法包括使用化学气相沉积技术或在第一温度下用氯化钛（TiCl 4）的反应气体进行的原子层沉积技术在电介质层上沉积第一氮化钛层 >）气体和氨（NH 3）气体，并且在第一氮化钛层上沉积第二氮化钛层，使用在大于第一温度与氯化钛（TiCl 4 N 3）气体和氨（NH 3）3气体的反应气体反应。

18. 发明授权

US07719045B2 Capacitor for a semiconductor device and method of forming the same 有权
标题翻译：用于半导体器件的电容器及其形成方法
公开(公告)号：US07719045B2
公开(公告)日：2010-05-18
申请号：US12251352
申请日：2008-10-14
申请人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
发明人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
IPC分类号： H01L27/108
CPC分类号： H01L28/90 , H01L27/0207 , H01L27/10852 , H01L28/75
摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
摘要翻译：在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分的下部电极被第二子电极覆盖。第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。第一和第二个应力的方向彼此相反。因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

19. 发明申请

US20060113580A1 Capacitor for a semiconductor device and method of forming the same 失效
标题翻译：用于半导体器件的电容器及其形成方法
公开(公告)号：US20060113580A1
公开(公告)日：2006-06-01
申请号：US11286316
申请日：2005-11-23
申请人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
发明人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
IPC分类号： H01L21/00
CPC分类号： H01L28/90 , H01L27/0207 , H01L27/10852 , H01L28/75
摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
摘要翻译：在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分的下部电极被第二子电极覆盖。第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。第一和第二个应力的方向彼此相反。因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

20. 发明授权

US07452783B2 Capacitor for a semiconductor device and method of forming the same 失效
标题翻译：用于半导体器件的电容器及其形成方法
公开(公告)号：US07452783B2
公开(公告)日：2008-11-18
申请号：US11286316
申请日：2005-11-23
申请人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
发明人： Young-Joo Cho , Hyun-Seok Lim , Rak-Hwan Kim , Jung-Wook Kim , Hyun-Suk Lee
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01L27/0207 , H01L27/10852 , H01L28/75
摘要： In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
摘要翻译：在具有高介电常数的电容器中，电容器包括圆柱形下电极，电介质层和上电极。在作为电介质层的下电极的内表面，顶面和外表面上形成金属氧化物层。第一子电极沿着下电极的轮廓在电介质层的表面上形成，并且第二子电极连续形成在与下电极的顶表面对应的第一子电极上，因此开口部分的下部电极被第二子电极覆盖。第一和第二子电极分别包括施加第一和第二应力的第一和第二金属氮化物层。第一和第二个应力的方向彼此相反。因此，在具有高介电常数的上电极中破裂最小化，从而减少电流泄漏。

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