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    • 11. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08741734B2
    • 2014-06-03
    • US12649605
    • 2009-12-30
    • Seung Bum Kim
    • Seung Bum Kim
    • H01L21/76
    • H01L27/10894H01L21/76229H01L27/0207H01L27/10855
    • A semiconductor device includes a semiconductor substrate having a trench defining an active region. A wall oxide is formed on side walls of the active region extending in the longitudinal direction, and an element isolation layer is formed in the trenches. A method of manufacturing a semiconductor device includes forming line-shape first trenches on a semiconductor substrate so as to define an active region; forming a wall oxide on surfaces of the first trenches; forming a second trench which separates the active region into a plurality of active regions; and filling the trenches with an element isolation layer.
    • 半导体器件包括具有限定有源区的沟槽的半导体衬底。 在沿纵向方向延伸的有源区的侧壁上形成壁氧化物,并且在沟槽中形成元件隔离层。 一种制造半导体器件的方法包括:在半导体衬底上形成线状的第一沟槽,以限定有源区; 在所述第一沟槽的表面上形成壁氧化物; 形成将所述有源区域分成多个有源区域的第二沟槽; 并用元件隔离层填充沟槽。
    • 14. 发明授权
    • Nonvolatile memory device, memory system, and read method thereof
    • 非易失存储器件,存储器系统及其读取方法
    • US08665647B2
    • 2014-03-04
    • US13302573
    • 2011-11-22
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • G11C11/34
    • G11C11/5642G11C16/0483G11C16/26G11C16/3418
    • A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
    • 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作,基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此,在选择的存储单元被读取之前,选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时,根据相邻存储单元的编程状态,根据相邻存储单元的编程状态,读取电压变化,执行所选存储单元的一个或多个读操作 。
    • 15. 发明申请
    • NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM, AND READ METHOD THEREOF
    • 非易失性存储器件,存储器系统及其读取方法
    • US20120134208A1
    • 2012-05-31
    • US13302573
    • 2011-11-22
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • Ju Seok LeeJae Yong JeongSeung Bum Kim
    • G11C16/26
    • G11C11/5642G11C16/0483G11C16/26G11C16/3418
    • A non-volatile memory device performs a read operation for compensating for coupling due to an adjacent memory cell. With the read operation of the non-volatile memory device, the coupling effect included in a read result of the selected memory cell is compensated on the basis of a program state of an adjacent memory cell adjacent to the selected memory cell. Toward this end, a read operation for the adjacent memory cell is selectively performed before the selected memory cell is read. Upon sensing of data from the selected memory cell, one or more read operations for the selected memory cell are performed according to the program state of the adjacent memory cell with a read voltage being changed in level depending on the program state of the adjacent memory cell.
    • 非易失性存储器件执行用于补偿由于相邻存储单元的耦合的读取操作。 利用非易失性存储器件的读取操作,基于与所选择的存储器单元相邻的相邻存储器单元的编程状态来补偿包括在所选存储单元的读取结果中的耦合效应。 为此,在选择的存储单元被读取之前,选择性地执行相邻存储单元的读取操作。 在感测到来自所选择的存储单元的数据时,根据相邻存储单元的编程状态,根据相邻存储单元的编程状态,读取电压变化,执行所选存储单元的一个或多个读操作 。