专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08810996B2 Inkjet-printed flexible electronic components from graphene oxide 有权
标题翻译：喷墨印刷的柔性电子元件由石墨烯氧化物
公开(公告)号：US08810996B2
公开(公告)日：2014-08-19
申请号：US13301124
申请日：2011-11-21
申请人： Woo Young Lee , Linh Le , De Kong , Matthew Henderson Ervin , James L. Zunino, III , Brian E. Fuchs
发明人： Woo Young Lee , Linh Le , De Kong , Matthew Henderson Ervin , James L. Zunino, III , Brian E. Fuchs
IPC分类号： H01G9/00 , H05K3/12 , H01G11/36 , H01G11/86 , H05K1/16 , H05K1/03 , H05K1/09
CPC分类号： H01G11/42 , H01G11/36 , H01G11/48 , H01G11/80 , H01G11/86 , H05K1/0393 , H05K1/092 , H05K1/162 , H05K3/125 , H05K2201/0323 , Y02E60/13
摘要： An electrical component includes an inkjet-printed graphene electrode. Graphene oxide flakes are deposited on a substrate in a graphene oxide ink using an inkjet printer. The deposited graphene oxide is thermally reduced to graphene. The electrical properties of the electrode are comparable to those of electrodes made using activated carbon, carbon nanotubes or graphene made by other methods. The electrical properties of the graphene electrodes may be tailored by adding nanoparticles of other materials to the ink to serve as conductivity enhancers, spacers, or to confer pseudocapacitance. Inkjet-printing can be used to make graphene electrodes of a desired thickness in preselected patterns. Inkjet printing can be used to make highly-transparent graphene electrodes. Inkjet-printed graphene electrodes may be used to fabricate double-layer capacitors that store energy by nanoscale charge separation at the electrode-electrolyte interface (i.e., “supercapacitors”).
摘要翻译：电气部件包括喷墨印刷的石墨烯电极。使用喷墨打印机将石墨烯氧化物薄片沉积在石墨烯氧化物油墨中的基板上。沉积的氧化石墨烯被热还原成石墨烯。电极的电性能与使用其它方法制造的活性炭，碳纳米管或石墨烯制成的电极相当。石墨烯电极的电性能可以通过将其他材料的纳米颗粒加入到墨水中以用作电导率增强剂，间隔物或赋予假电容来定制。喷墨印刷可用于以预选图案制造所需厚度的石墨烯电极。喷墨印刷可用于制造高透明石墨烯电极。喷墨印刷的石墨烯电极可以用于制造在电极 - 电解质界面处（即“超级电容器”）通过纳米级电荷分离来存储能量的双层电容器。

12. 发明授权

US08468872B2 Hydrogen sensor and method of manufacturing the same 有权
标题翻译：氢传感器及其制造方法
公开(公告)号：US08468872B2
公开(公告)日：2013-06-25
申请号：US13059882
申请日：2010-12-03
申请人： Woo Young Lee , Jun Min Lee , Eun Yeong Lee
发明人： Woo Young Lee , Jun Min Lee , Eun Yeong Lee
IPC分类号： G01N27/04 , G01M3/04
CPC分类号： G01N27/127 , G01N33/005
摘要： A novel method of manufacturing a hydrogen sensor is disclosed. The method includes the steps of forming a thin film made of a transition metal or an alloy thereof on a surface of an elastic substrate, and forming a plurality of nanogaps in the thin film formed on the surface of the elastic substrate by applying a tensile force to the elastic substrate. The nanogaps are formed as the thin film is stretched in a direction in which the tensile force acts while being contracted in a direction perpendicular to the direction in which the tensile force acts when the tensile force is applied, and is contracted again in the direction in which the tensile force is released while being stretched again in the direction perpendicular to the direction in which the tensile force is released when the tensile force is released.
摘要翻译：公开了制造氢传感器的新颖方法。该方法包括以下步骤：在弹性基材的表面上形成由过渡金属或其合金制成的薄膜，并通过施加张力在所述弹性基材的表面上形成的薄膜中形成多个纳米点到弹性基材。当薄膜在拉伸力作用的方向上被拉伸时，形成纳米薄膜，同时在垂直于张力作用于拉伸力的方向的方向收缩，并且再次沿着当拉伸力被释放时，张力再次沿与拉伸力释放方向垂直的方向被拉伸。

13. 发明申请

US20120170171A1 INKJET-PRINTED FLEXIBLE ELECTRONIC COMPONENTS FROM GRAPHENE OXIDE 有权
标题翻译：喷墨打印柔性电子元件从石墨氧化物
公开(公告)号：US20120170171A1
公开(公告)日：2012-07-05
申请号：US13301124
申请日：2011-11-21
申请人： Woo Young Lee , Linh Le , De Kong , Matthew Henderson Ervin , James L. Zunino, III , Brian E. Fuchs
发明人： Woo Young Lee , Linh Le , De Kong , Matthew Henderson Ervin , James L. Zunino, III , Brian E. Fuchs
IPC分类号： H01G9/155 , H01G9/145 , H01G9/15 , H05K1/00
CPC分类号： H01G11/42 , H01G11/36 , H01G11/48 , H01G11/80 , H01G11/86 , H05K1/0393 , H05K1/092 , H05K1/162 , H05K3/125 , H05K2201/0323 , Y02E60/13
摘要： An electrical component includes an inkjet-printed graphene electrode. Graphene oxide flakes are deposited on a substrate in a graphene oxide ink using an inkjet printer. The deposited graphene oxide is thermally reduced to graphene. The electrical properties of the electrode are comparable to those of electrodes made using activated carbon, carbon nanotubes or graphene made by other methods. The electrical properties of the graphene electrodes may be tailored by adding nanoparticles of other materials to the ink to serve as conductivity enhancers, spacers, or to confer pseudocapacitance. Inkjet-printing can be used to make graphene electrodes of a desired thickness in preselected patterns. Inkjet printing can be used to make highly-transparent graphene electrodes. Inkjet-printed graphene electrodes may be used to fabricate double-layer capacitors that store energy by nanoscale charge separation at the electrode-electrolyte interface (i.e., “supercapacitors”).
摘要翻译：电气部件包括喷墨印刷的石墨烯电极。使用喷墨打印机将石墨烯氧化物薄片沉积在石墨烯氧化物油墨中的基板上。沉积的氧化石墨烯被热还原成石墨烯。电极的电性能与使用其它方法制造的活性炭，碳纳米管或石墨烯制成的电极相当。石墨烯电极的电性能可以通过将其他材料的纳米颗粒加入到墨水中以用作电导率增强剂，间隔物或赋予假电容来定制。喷墨印刷可用于以预选图案制造所需厚度的石墨烯电极。喷墨印刷可用于制造高透明石墨烯电极。喷墨印刷的石墨烯电极可以用于制造在电极 - 电解质界面处（即“超级电容器”）通过纳米级电荷分离来存储能量的双层电容器。

14. 发明申请

US20110259083A1 HYDROGEN SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氢传感器及其制造方法
公开(公告)号：US20110259083A1
公开(公告)日：2011-10-27
申请号：US13059882
申请日：2010-12-03
申请人： Woo Young Lee , Jun Min Lee , Eun Yeong Lee
发明人： Woo Young Lee , Jun Min Lee , Eun Yeong Lee
IPC分类号： G01N9/00 , C23F1/04 , B05D5/12 , B05D3/10 , B82Y40/00
CPC分类号： G01N27/127 , G01N33/005
摘要： A novel method of manufacturing a hydrogen sensor is disclosed. The method includes the steps of forming a thin film made of a transition metal or an alloy thereof on a surface of an elastic substrate, and forming a plurality of nanogaps in the thin film formed on the surface of the elastic substrate by applying a tensile force to the elastic substrate. The nanogaps are formed as the thin film is stretched in a direction in which the tensile force acts while being contracted in a direction perpendicular to the direction in which the tensile force acts when the tensile force is applied, and is contracted again in the direction in which the tensile force is released while being stretched again in the direction perpendicular to the direction in which the tensile force is released when the tensile force is released.
摘要翻译：公开了制造氢传感器的新颖方法。该方法包括以下步骤：在弹性基材的表面上形成由过渡金属或其合金制成的薄膜，并通过施加张力在所述弹性基材的表面上形成的薄膜中形成多个纳米点到弹性基材。当薄膜在拉伸力作用的方向上被拉伸时，形成纳米薄膜，同时在垂直于张力作用于拉伸力的方向的方向收缩，并且再次沿着当拉伸力被释放时，张力再次沿与拉伸力释放方向垂直的方向被拉伸。

15. 发明授权

US07875194B2 Method for manufacturing hydrogen sensors using Pd nano wire 有权
标题翻译：使用Pd纳米线制造氢传感器的方法
公开(公告)号：US07875194B2
公开(公告)日：2011-01-25
申请号：US11959959
申请日：2007-12-19
申请人： Woo Young Lee , Kye Jin Jeon , Eun Song Yi Lee
发明人： Woo Young Lee , Kye Jin Jeon , Eun Song Yi Lee
IPC分类号： C23F1/00
CPC分类号： G01N33/005 , B82Y15/00
摘要： Disclosed is a method for manufacturing a hydrogen sensor using Pd nano-wires. The method includes steps of forming an external electrode pattern on a substrate applying a first resin layer to the substrate and forming a resin layer nano-channel pattern; depositing Pd on the substrate having the nano-channel pattern, by sputtering, and removing the first resin layer to form Pd nano-wires; applying a second resin layer to the substrate having the Pd nano-wires, and forming a resin layer pattern on the external electrode pattern, at opposing ends of the Pd nano-wires, and at predetermined positions between the external electrode pattern and the opposing ends of the Pd nano-wires; and depositing conductive metal on the resin layer pattern and removing the resin layer pattern, thereby electrically connecting the external electrode pattern to the Pd nano-wires.
摘要翻译：公开了使用Pd纳米线制造氢传感器的方法。该方法包括以下步骤：在基板上施加第一树脂层并形成树脂层纳米通道图案的基板上形成外部电极图案; 通过溅射在具有纳米通道图案的衬底上沉积Pd并除去第一树脂层以形成Pd纳米线; 在具有Pd纳米线的基板上施加第二树脂层，在外部电极图案上形成树脂层图案，在Pd纳米线的相对端，并且在外部电极图案和相对端之间的预定位置的Pd纳米线; 并在树脂层图案上沉积导电金属并除去树脂层图案，从而将外部电极图案电连接到Pd纳米线。

16. 发明申请

US20100175734A1 Thermoelectric nanowire and method of manufacturing the same 审中-公开
标题翻译：热电纳米线及其制造方法
公开(公告)号：US20100175734A1
公开(公告)日：2010-07-15
申请号：US12657084
申请日：2010-01-13
申请人： Woo Young Lee , Jin Hee Ham , Seung Hyun Lee , Jong Wook Roh , Hyun Su Kim , Woo Chul Kim
发明人： Woo Young Lee , Jin Hee Ham , Seung Hyun Lee , Jong Wook Roh , Hyun Su Kim , Woo Chul Kim
IPC分类号： H01L35/16 , B05D5/12 , B32B15/02
CPC分类号： H01L35/16 , B82Y30/00 , B82Y40/00 , C30B1/12 , C30B29/02 , C30B29/52 , C30B29/60 , H01L35/34 , Y10T428/12097
摘要： A thermoelectric nanowire and a method of manufacturing the same, in which an oxide layer and a thermoelectric material layer, both of which have different thermal expansion coefficients, are stacked on a substrate, and a single crystal thermoelectric nanowire is grown from a thermoelectric material using the compressive stress caused by the difference between the thermal expansion coefficients. The method includes preparing a substrate on which an oxide layer is formed, forming a plurality of nanoparticles, each of which includes aluminum (Al), silver (Ag), iron (Fe) or oxides thereof, on the oxide layer, forming a thermoelectric material thin film, which has thermoelectric properties, above the oxide layer so as to include the nanoparticles formed on the oxide layer, heat-treating the substrate having the thermoelectric material thin film to grow the thermoelectric nanowire containing the nanoparticles, and cooling the substrate at room temperature after the heat-treatment.
摘要翻译：热电纳米线及其制造方法，其中具有不同热膨胀系数的氧化物层和热电材料层堆叠在基板上，并且单晶热电纳米线由热电材料生长，使用由压缩应力引起的热膨胀系数之差。该方法包括制备其上形成有氧化物层的基板，在氧化物层上形成多个纳米颗粒，每个纳米颗粒包括铝（Al），银（Ag），铁（Fe）或氧化物），形成热电具有热电性质的材料薄膜，以包含形成在氧化物层上的纳米颗粒，对具有热电材料薄膜的基板进行热处理，以生长含有纳米颗粒的热电纳米线，并将基板冷却热处理后的室温。

17. 发明授权

US6154414A Semiconductor memory device having a plurality of memory blocks 有权
标题翻译：具有多个存储块的半导体存储器件
公开(公告)号：US6154414A
公开(公告)日：2000-11-28
申请号：US317211
申请日：1999-05-24
申请人： Woo Young Lee
发明人： Woo Young Lee
IPC分类号： G11C11/407 , G11C7/12 , G11C8/12 , G11C7/00
CPC分类号： G11C7/12 , G11C8/12
摘要： A semiconductor memory device has a plurality of memory blocks. The semiconductor memory device pre-charges a memory block when a block address signal applied to the memory block is identical with a previous block address signal previously applied, and activates the memory block when the block address signal is not identical with the previous block address signal. As a result, a pre-charge operation of a previous block and an activation operation of a present block are simultaneously performed so that the operation speed of an entire system becomes high-speed.
摘要翻译：半导体存储器件具有多个存储块。半导体存储器件当施加到存储器块的块地址信号与先前施加的先前块地址信号相同时对存储器块进行预充电，并且当块地址信号与先前块地址信号不同时激活存储块。结果，同时执行前一块的预充电操作和当前块的激活操作，使得整个系统的操作速度变得高速。

18. 发明申请

US20160336776A1 WIRELESS CHARGING DEVICE 审中-公开
标题翻译：无线充电器
公开(公告)号：US20160336776A1
公开(公告)日：2016-11-17
申请号：US14922135
申请日：2015-10-24
申请人： Woo Young Lee , Si Hun Yang , In Yong Yeo , Tae Jong Ha , Gyu Yeong Choe , Hyun Wook Seong
发明人： Woo Young Lee , Si Hun Yang , In Yong Yeo , Tae Jong Ha , Gyu Yeong Choe , Hyun Wook Seong
IPC分类号： H02J7/00 , H05K7/20 , H02J7/02
CPC分类号： H02J7/0042 , H02J7/025 , H02J50/10
摘要： Disclosed herein is a wireless charging device including a heat radiation panel having a radiation plate and a radiation fin protruding from an upper surface of the radiation plate; a core section arranged in a region other than the protruding radiation fin, the core section being made of a material having high permeability; and a coil section arranged on the core section so as to come into contact with the protruding radiation fin.
摘要翻译：这里公开了一种无线充电装置，其包括具有从辐射板的上表面突出的辐射板和辐射翅片的散热板; 芯部，其布置在除了所述突出散热片之外的区域中，所述芯部由具有高导磁率的材料制成; 以及设置在所述芯部上以与所述突出的辐射翅片接触的线圈部分。

19. 发明授权

US07095070B2 Method for fabricating Bi thin film and device using the same 有权
标题翻译：制造Bi薄膜的方法及使用其的装置
公开(公告)号：US07095070B2
公开(公告)日：2006-08-22
申请号：US10798447
申请日：2004-03-12
申请人： Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
发明人： Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01F10/1936 , C25D3/54 , C25D5/50 , G11C11/14 , H01F1/401 , H01F41/18 , H01F41/26 , H01L43/12
摘要： In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
摘要翻译：在室温下具有大的MR（磁阻）的Bi薄膜的制造方法以及使用该Bi薄膜的自旋电子学装置的制造方法中，Bi薄膜通过电沉积法和溅射法制造，具有非常大的MR 在室温下的特性，并且可以应用于各种自旋电子器件。

20. 发明授权

US06580656B2 Semiconductor memory device having memory cell block activation control circuit and method for controlling activation of memory cell blocks thereof 失效
公开(公告)号：US06580656B2
公开(公告)日：2003-06-17
申请号：US10029215
申请日：2001-12-28
申请人： Woo Young Lee
发明人： Woo Young Lee
IPC分类号： G11C800
CPC分类号： G11C8/12
摘要： A semiconductor memory device having a plurality of memory cell blocks employs a block activation control unit for controlling an activation timing of the plurality of memory cell blocks. Therefore, when a previously inputted block activation signal is identical to a currently inputted block activation signal, the currently inputted block activation signal is delayed for a predetermined time, so that the memory cell block can be activated after a precharge operation. When the previously inputted block activation signal is different from the currently inputted block activation signal, the memory cell block corresponding to the currently inputted block activation signal is activated, and the memory cell block corresponding to the previously inputted block activation signal performs the precharge operation at the same time. As a result, unnecessary delay time is reduced in memory block activation, thereby improving operation speed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式