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    • 12. 发明授权
    • ESD protection device
    • ESD保护装置
    • US07894170B2
    • 2011-02-22
    • US11081705
    • 2005-03-17
    • Hsueh-Kun LiaoTao Cheng
    • Hsueh-Kun LiaoTao Cheng
    • H02H9/00
    • H01L27/0266
    • For maintaining the regular operating current in an inner circuit under electrostatic discharge (ESD) event, an ESD protection device is provided to control an ESD path switch in the turned-on condition by employing a MOS device and a latch-detected turned-on circuit. The MOS device has a self-aligned silicidation (Salicide) therein. The ESD protection device is used to stabilize operation efficiency and reduce the area of an ESD protection device without a silicide block disposed therein for enhancing the ESD protection capability.
    • 为了在静电放电(ESD)事件下保持内部电路中的常规工作电流,提供ESD保护装置,以通过采用MOS器件和锁存检测的导通电路来控制导通状态下的ESD路径开关 。 MOS器件中具有自对准硅化物(Salicide)。 ESD保护装置用于稳定运行效率并减小ESD保护装置的面积,而不会在其中设置硅化物块,以增强ESD保护能力。
    • 13. 发明授权
    • Protection circuit for electro static discharge
    • 静电放电保护电路
    • US07532446B2
    • 2009-05-12
    • US10838272
    • 2004-05-05
    • Tao ChengHsueh-Kun Liao
    • Tao ChengHsueh-Kun Liao
    • H02H9/00
    • H01L27/0285H01L27/0255H01L2924/0002H01L2924/00
    • An electro static discharge (ESD) protection circuit employing a field-effect transistor (FET) having no silicide block disposed thereon. It is connected with an internal circuit so as to prevent the internal circuit from the influence of an ESD event, wherein the internal circuit has at least a signal input end. The ESD protection circuit includes: an ESD clamp circuit for providing an ESD grounding path as an ESD occurs; and at least a pair of p-n junction diodes. The p-n junction diodes are stacked so that one of the p-n junction diodes has a n-type end coupled to the signal input end and the other one has a p-type end coupled to the signal input end as well. The ESD clamp circuit has at least a FET, whose drain has no silicide block disposed thereon.
    • 采用不设置硅化物块的场效应晶体管(FET)的静电放电(ESD)保护电路。 与内部电路连接,以防止内部电路受到ESD事件的影响,其中内部电路至少具有信号输入端。 ESD保护电路包括:用于提供ESD接地路径作为ESD发生的ESD钳位电路; 和至少一对p-n结二极管。 p-n结二极管被堆叠,使得p-n结二极管中的一个具有耦合到信号输入端的n型端,另一端具有耦合到信号输入端的p型端。 ESD钳位电路至少具有FET,其漏极没有设置在其上的硅化物块。
    • 15. 发明授权
    • Laser power controller and method for performing auto power control
    • 激光功率控制器和执行自动功率控制的方法
    • US07263113B2
    • 2007-08-28
    • US10710970
    • 2004-08-15
    • Yung-Chih LiHsueh-Kun LiaoChing-Chuan Hsu
    • Yung-Chih LiHsueh-Kun LiaoChing-Chuan Hsu
    • H01S3/13H01S3/00
    • H01S5/0683G11B7/1263H01S5/042
    • A laser power controller for performing an auto power control to control the laser power of an optical pick-up unit (OPU) includes: a sample/hold circuit used for sampling and holding a front photodiode output signal to generate an analog feedback signal; an analog-to-digital converter (ADC) electrically coupled to the sample/hold circuit for transferring the analog feedback signal into a digital feedback signal; and a digital control circuit electrically coupled to the ADC for generating a power control signal and outputting the power control signal to the OPU in order to control the laser power of the OPU. The front photodiode output signal corresponds to the laser power of the OPU.
    • 一种用于执行自动功率控制以控制光学拾取单元(OPU)的激光功率的激光功率控制器包括:采样/保持电路,用于采样并保持前光电二极管输出信号以产生模拟反馈信号; 电耦合到采样/保持电路的模拟 - 数字转换器(ADC),用于将模拟反馈信号传送到数字反馈信号; 以及电耦合到ADC的数字控制电路,用于产生功率控制信号,并将功率控制信号输出到OPU以便控制OPU的激光功率。 前光电二极管输出信号对应于OPU的激光功率。
    • 17. 发明授权
    • Laser power control unit and method for performing auto power control
    • 激光功率控制单元和执行自动电源控制的方法
    • US07457332B2
    • 2008-11-25
    • US11759947
    • 2007-06-08
    • Yung-Chih LiHsueh-Kun LiaoChing-Chuan Hsu
    • Yung-Chih LiHsueh-Kun LiaoChing-Chuan Hsu
    • H01S3/13H01S3/00
    • H01S5/0683G11B7/1263H01S5/042
    • A laser power control unit used for controlling the laser power of an optical pick-up unit (OPU) is provided. The laser power control unit includes: at least one analog-to-digital converter (ADC) electrically coupled to the OPU for transferring a front photodiode output signal into a digital feedback signal; and at least one digital control circuit electrically coupled to the ADC for generating a power control signal and outputting the power control signal to the OPU in order to control the laser power of the OPU. The digital control circuit has a compensation circuit used for generating a compensation value according to a difference between the digital feedback signal and a digital target feedback signal so as to adjust the power control signal. The front photodiode output signal corresponds to the laser power of the OPU.
    • 提供了用于控制光学拾取单元(OPU)的激光功率的激光功率控制单元。 激光功率控制单元包括:电耦合到OPU的至少一个模数转换器(ADC),用于将前光电二极管输出信号转换成数字反馈信号; 以及电耦合到ADC的至少一个数字控制电路,用于产生功率控制信号,并将功率控制信号输出到OPU以便控制OPU的激光功率。 数字控制电路具有补偿电路,用于根据数字反馈信号和数字目标反馈信号之间的差产生补偿值,以便调整功率控制信号。 前光电二极管输出信号对应于OPU的激光功率。
    • 18. 发明授权
    • Method for controlling output power of a pick-up head using automatic power control loop
    • 使用自动功率控制回路控制拾取头的输出功率的方法
    • US07072273B2
    • 2006-07-04
    • US10249221
    • 2003-03-24
    • Hsueh-Kun LiaoHseang-Ji Hsieh
    • Hsueh-Kun LiaoHseang-Ji Hsieh
    • G11B7/125
    • G11B7/1263
    • A method for automatically controlling output power of a pick-up head. When output power of a pick-up head is to be changed, a first switch is utilized to connect a first input port of a comparator circuit to a supply source, and a second switch is utilized to connect a first signal source to a driver circuit such that the driver circuit will control the output power according to a first signal. When voltage drop between the first input port and a output port of the comparator circuit stabilizes, the first switch is utilized to connect the first input port to a sensor, and the second switch is utilized to connect the output port and the driver circuit such that the driver circuit will control the output power according to a comparative signal.
    • 一种用于自动控制拾取头的输出功率的方法。 当要改变拾取头的输出功率时,利用第一开关将比较器电路的第一输入端口连接到电源,而第二开关用于将第一信号源连接到驱动电路 使得驱动器电路将根据第一信号来控制输出功率。 当比较器电路的第一输入端口和输出端口之间的电压降稳定时,第一开关用于将第一输入端口连接到传感器,并且第二开关用于连接输出端口和驱动器电路,使得 驱动电路将根据比较信号控制输出功率。
    • 19. 发明申请
    • ESD protection device
    • ESD保护装置
    • US20050207078A1
    • 2005-09-22
    • US11081705
    • 2005-03-17
    • Hsueh-Kun LiaoTao Cheng
    • Hsueh-Kun LiaoTao Cheng
    • H01L27/02H02H9/00
    • H01L27/0266
    • For maintaining the regular operating current in an inner circuit under electrostatic discharge (ESD) event, the present invention provides an ESD protection device to control an ESD path switch in the turned-on condition by employing a MOS device and a latch-detected turned-on circuit. The MOS device has a self-aligned silicidation (Salicide) therein. The present invention is used to stabilize operation efficiency and reduce the area of an ESD protection device without a silicide block disposed therein for enhancing the ESD protection capability.
    • 为了在静电放电(ESD)事件下保持内部电路中的正常工作电流,本发明提供一种ESD保护装置,通过采用MOS器件和锁存检测的转向开关来控制导通状态下的ESD路径开关, 上电路。 MOS器件中具有自对准硅化物(Salicide)。 本发明用于稳定运行效率并减小ESD保护装置的面积,而不会在其中设置硅化物块以提高ESD保护能力。
    • 20. 发明申请
    • Protection circuit for electro static discharge
    • 静电放电保护电路
    • US20050013073A1
    • 2005-01-20
    • US10838272
    • 2004-05-05
    • Tao ChengHsueh-Kun Liao
    • Tao ChengHsueh-Kun Liao
    • H01L23/60H01L27/02H02H9/00
    • H01L27/0285H01L27/0255H01L2924/0002H01L2924/00
    • An electro static discharge (ESD) protection circuit employing a field-effect transistor (FET) having no silicide block disposed thereon. It is connected with an internal circuit so as to prevent the internal circuit from the influence of an ESD event, wherein the internal circuit has at least a signal input end. The ESD protection circuit includes: an ESD clamp circuit for providing an ESD grounding path as an ESD occurs; and at least a pair of p-n junction diodes. The p-n junction diodes are stacked so that one of the p-n junction diodes has a n-type end coupled to the signal input end and the other one has a p-type end coupled to the signal input end as well. The ESD clamp circuit has at least a FET, whose drain has no silicide block disposed thereon.
    • 采用不设置硅化物块的场效应晶体管(FET)的静电放电(ESD)保护电路。 与内部电路连接,以防止内部电路受到ESD事件的影响,其中内部电路至少具有信号输入端。 ESD保护电路包括:用于提供ESD接地路径作为ESD发生的ESD钳位电路; 和至少一对p-n结二极管。 p-n结二极管被堆叠,使得p-n结二极管中的一个具有耦合到信号输入端的n型端,另一端具有耦合到信号输入端的p型端。 ESD钳位电路至少具有FET,其漏极没有设置在其上的硅化物块。