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11. 发明授权

US5403756A Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor 失效
标题翻译：制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
公开(公告)号：US5403756A
公开(公告)日：1995-04-04
申请号：US158592
申请日：1993-11-24
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
IPC分类号： H01L21/30 , H01L21/3215 , H01L21/336 , H01L21/266
CPC分类号： H01L29/66757 , H01L21/3003 , H01L21/32155
摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
摘要翻译：公开了一种多晶半导体膜的制造方法。该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。

12. 发明申请

US20100022102A1 LASER ANNEALING METHOD AND DEVICE 有权
标题翻译：激光退火方法和装置
公开(公告)号：US20100022102A1
公开(公告)日：2010-01-28
申请号：US11916687
申请日：2006-09-12
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： H01L21/268 , H01L21/64
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译：一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

13. 发明授权

US08629522B2 Laser annealing method and device 有权
标题翻译：激光退火方法及装置
公开(公告)号：US08629522B2
公开(公告)日：2014-01-14
申请号：US13608818
申请日：2012-09-10
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： H01L27/14 , H01L31/00
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译：一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

14. 发明申请

US20080160783A1 Method For Manufacturing Semiconductor Device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080160783A1
公开(公告)日：2008-07-03
申请号：US10598961
申请日：2004-05-28
申请人： Tomoyuki Watanabe , Atsushi Yoshinouchi
发明人： Tomoyuki Watanabe , Atsushi Yoshinouchi
IPC分类号： H01L21/469
CPC分类号： H01L21/02129 , H01L21/02131 , H01L21/3165 , H01L21/76232 , H01L21/76801 , H01L21/76837 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing semiconductor device according to the present invention comprises a first film forming step of forming, on a concave and convex portion formed by an element on a semiconductor substrate, an oxidation preventive layer which prevents permeation of moisture into the element; a second film forming step of forming, on this oxidation preventive layer, an expansion layer which can be oxidized and expanded by a heat treatment in an oxidation atmosphere; a third film forming step of forming, on this expansion layer, an insulating film which can be fluidized by the heat treatment in the oxidation atmosphere; and an expansion step of subjecting, to the heat treatment in the oxidation atmosphere, the semiconductor substrate on which the oxidation preventive layer, the expansion layer and the insulating film have been formed, to fluidize the insulating film and to oxidize and expand the expansion layer, thereby eliminating bubbles generated in the insulating film.
摘要翻译：根据本发明的制造半导体器件的方法包括：第一膜形成步骤，在由半导体衬底上的元件形成的凹凸部上形成防止水分渗透到元件中的防氧化层; 在该氧化防止层上形成能够在氧化气氛中进行热处理而被氧化膨胀的膨胀层的第二成膜工序; 在该膨胀层上形成能够在氧化气氛中通过热处理而流化的绝缘膜的第三成膜工序; 以及在氧化气氛中对其上形成有氧化层，膨胀层和绝缘膜的半导体衬底进行热处理以使绝缘膜流化并使膨胀层氧化和膨胀的膨胀步骤从而消除在绝缘膜中产生的气泡。

15. 发明授权

US06492213B1 Semiconductor device, thin film transistor and method for producing the same, and liquid crystal display apparatus and method for producing the same 有权
标题翻译：半导体装置，薄膜晶体管及其制造方法以及液晶显示装置及其制造方法
公开(公告)号：US06492213B1
公开(公告)日：2002-12-10
申请号：US09502487
申请日：2000-02-11
申请人： Atsushi Yoshinouchi , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Yasuaki Murata
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/2022
摘要： A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.
摘要翻译：半导体器件包括：衬底; 形成在基板上的线; 以及含有与该线连接的硅的结晶半导体膜。结晶半导体膜通过退火结晶，其中线的构成材料用作催化剂。

16. 发明授权

US08115137B2 Laser annealing method and laser annealing apparatus 有权
标题翻译：激光退火方法和激光退火装置
公开(公告)号：US08115137B2
公开(公告)日：2012-02-14
申请号：US12997543
申请日：2008-06-12
申请人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Miyuki Masaki , Masaru Morita , Atsushi Yoshinouchi
发明人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Miyuki Masaki , Masaru Morita , Atsushi Yoshinouchi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： B23K26/0732 , B23K26/046 , B23K26/0665 , G02B27/0905 , G02B27/0966 , G02B27/48 , H01L21/02678
摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.
摘要翻译：在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝在半导体膜3的矩形梁的小轴向的表面上。半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动的检测。

17. 发明授权

US07833871B2 Laser annealing method and device 有权
标题翻译：激光退火方法及装置
公开(公告)号：US07833871B2
公开(公告)日：2010-11-16
申请号：US11916687
申请日：2006-09-12
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译：一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

18. 发明授权

US5126859A Contact type image sensor 失效
标题翻译：接触式图像传感器
公开(公告)号：US5126859A
公开(公告)日：1992-06-30
申请号：US536446
申请日：1990-06-12
申请人： Atsushi Yoshinouchi , Shuhei Tsuchimoto
发明人： Atsushi Yoshinouchi , Shuhei Tsuchimoto
IPC分类号： H04N1/028 , H01L27/14 , H04N1/031
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact type image sensor includes a light source for illuminating an original to be read and a substrate in which an optical fiber array member is assembled. The substrate is disposed such that one end of the optical fiber array member faces the original for transmitting a reflected light from the illuminated original therethrough. The contact type image sensor further includes a light detecting element array formed on the substrate and facing the other end of the optical fiber array member for receiving the transmitted light and converting the received light to an electrical signal. The contact type image sensor also includes a driving circuit disposed on the substrate and electrically connected to the light detecting element array for driving the light detecting element array.

19. 发明授权

US5004905A Contact type image sensor with a fiber array coated in part with an absorber 失效
标题翻译：具有部分涂覆有吸收体的纤维阵列的接触式图像传感器
公开(公告)号：US5004905A
公开(公告)日：1991-04-02
申请号：US432995
申请日：1989-11-08
申请人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto
发明人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto
IPC分类号： H04N1/031
CPC分类号： H04N1/02865 , H04N1/0311 , H04N1/0312 , H04N1/0316
摘要： A contact type image sensor comprising a light-detecting element array formed on a substrate, a light source for irradiating an original to be read, and an optical fiber array disposed between said light-detecting element array and said original to be read, said optical fiber array being formed by laminating an optical fiber array member that is composed of optical fibers not coated with an absorber on an optical fiber array member that is composed of optical fibers coated with an absorber, said optical fibers being disposed between said light-detecting element array and said original to be read, and said light source being disposed at the light emission side of said optical fiber array, thereby attaining a precise irradiation of an original with light from a light source and reliably shuts off the leakage to maintain excellent resolution characteristics of the sensor.

20. 发明授权

US4942481A Contact-type image sensor 失效
标题翻译：接触式图像传感器
公开(公告)号：US4942481A
公开(公告)日：1990-07-17
申请号：US217681
申请日：1988-07-11
申请人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
发明人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
IPC分类号： H04N1/031 , H04N1/40
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript; an optical fiber array that is constituted by a bundle of optical fibers that are buried in the substrate, the optical fiber array introducing the reflected light from the manuscript into the light-receiving surfaces of the photodetectors; and a light-absorbing substance that is disposed on the outer surface of each of the optical fibers, wherein the light-absorbing substance is disposed on the outer surface of each of the optical fibers, except for the region with a given length from the end of the optical fiber array that faces the manuscript.

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