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11. 发明授权

US5637510A Method for fabricating solar cell 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5637510A
公开(公告)日：1997-06-10
申请号：US596414
申请日：1996-02-02
申请人： Hiroaki Morikawa , Hisao Kumabe
发明人： Hiroaki Morikawa , Hisao Kumabe
IPC分类号： H01L31/04 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/035281 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521 , Y10S136/29 , Y10S148/125 , Y10S148/128 , Y10S148/135 , Y10S148/153 , Y10S438/958 , Y10S438/977
摘要： In a method of producing a solar cell, a photovoltaic thin semiconductor crystalline film is formed on an underlying substrate and hydrogen passivated throughout the film thickness direction of the photovoltaic film whereby a high efficiency solar cell is obtained. In addition, since the passivation process is performed before forming a rear surface electrode on the thin semiconductor crystalline film, the passivation process is not limited by the rear surface electrode. Thereby, a solar cell having a higher energy conversion efficiency is obtained. The passivation process is performed by exposing the thin semiconductor crystalline film to a hydrogen ion ambient having a low acceleration energy, below 2 KeV, or to a plasma ambient. Therefore, the uniformity of the passivation process at a wafer surface is improved and a large area wafer can be efficient processed. Furthermore, the passivation process can be performed to a plurality of solar cells having the thin semiconductor crystalline films and arranged in a module.
摘要翻译：在制造太阳能电池的方法中，在下层基板上形成光电薄膜半导体结晶膜，在光电膜的整个膜厚方向上氢钝化，得到高效率的太阳能电池。此外，由于在薄半导体结晶膜上形成后表面电极之前进行钝化处理，所以钝化处理不受背面电极的限制。从而获得具有较高能量转换效率的太阳能电池。通过将薄半导体晶体膜暴露于具有低加速能量，低于2KeV的氢离子环境或者等离子体环境来进行钝化处理。因此，晶片表面的钝化处理的均匀性得到改善，可以有效地处理大面积晶片。此外，可以对具有薄半导体晶体膜并且布置在模块中的多个太阳能电池执行钝化处理。

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