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11. 发明申请

US20130271832A1 ANTISTATIC HARDCOAT FILM, PROCESS FOR PRODUCING SAME, POLARIZER, AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译：抗静电胶片，其制造方法，偏光镜和图像显示装置
公开(公告)号：US20130271832A1
公开(公告)日：2013-10-17
申请号：US13823971
申请日：2011-09-06
申请人： Mayu Youki , Tomoyuki Horio , Yoshihiro Nishimura , Mariko Hayashi , Yuya Inomata , Hiroshi Nakamura
发明人： Mayu Youki , Tomoyuki Horio , Yoshihiro Nishimura , Mariko Hayashi , Yuya Inomata , Hiroshi Nakamura
IPC分类号： G02B1/10
CPC分类号： G02B1/14 , G02B1/10 , G02B1/105 , G02B1/16 , G02B1/18 , G02B5/3033 , G02B27/0006 , Y10T428/24975
摘要： The claimed invention provides an antistatic hard coat film that is extremely excellent in white muddiness resistance and antistatic properties and sufficiently prevents an interference fringe pattern. The claimed invention provides an antistatic hard coat film including a triacetyl cellulose substrate and a hard coat layer formed on the triacetyl cellulose substrate, the hard coat layer including an antistatic agent, a (meth)acrylate resin, and a polymer of a (meth)acrylate monomer, the triacetyl cellulose substrate including a permeation layer formed by permeation of the (meth)acrylate monomer from the hard coat layer side of the interface toward the opposite side of the hard coat layer, the antistatic hard coat film satisfying Formulas (1), (2), and (3): 3 μm≦T≦18 μm Formula (1) 0.3T≦t≦0.9T Formula (2) 2 μm≦T−t≦11 μm Formula (3) where T denotes the total thickness (μm) of the permeation layer and the hard coat layer, and t denotes the thickness (μm) of the permeation layer.
摘要翻译：要求保护的发明提供了一种抗白色混浊性和抗静电性极好的抗静电硬涂膜，并充分防止干涉条纹图案。要求保护的发明提供一种抗静电硬涂膜，其包含三乙酰纤维素基质和在三乙酰纤维素基质上形成的硬涂层，所述硬涂层包含抗静电剂，（甲基）丙烯酸酯树脂和（甲基）丙烯酸酯树脂的聚合物，丙烯酸酯单体，所述三乙酰纤维素基质包括通过（甲基）丙烯酸酯单体从界面的硬涂层侧朝向硬涂层的相对侧渗透而形成的渗透层，满足式（1）的抗静电硬涂层，，（2）和（3）：3μm@ T @ 18 mumFormula（1）0.3T @ t @ 0.9TFormula（2）2mum @ Tt @ 11mumFormula（3）其中T表示总厚度（mum）渗透层和硬涂层，t表示渗透层的厚度（mum）。

12. 发明授权

US08536957B1 High-frequency circuit module having a duplexer disposed between specified module integrated circuits 有权
标题翻译：高频电路模块具有布置在指定的模块集成电路之间的双工器
公开(公告)号：US08536957B1
公开(公告)日：2013-09-17
申请号：US13593141
申请日：2012-08-23
申请人： Hiroshi Nakamura , Tomohiro Igarashi
发明人： Hiroshi Nakamura , Tomohiro Igarashi
IPC分类号： H01P5/12 , H01P1/213 , H03H9/70 , H03H9/72
CPC分类号： H04L5/1461 , H01L23/3735 , H01L2224/16225 , H03H7/463 , H03H9/0547 , H03H9/08 , H04B1/0057 , H05K1/0207 , H05K1/0216 , H05K1/0237
摘要： Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module 100, an RFIC 160 that performs transmission and reception processes for high-frequency signals, a power amplifier IC 155 that amplifies a transmission signal from the RFIC, and a duplexer 110 that separates a transmission signal outputted from the power amplifier IC 155 to an antenna and a reception signal that is inputted from the antenna to the RFIC 160 are formed on the top surface thereof. The duplexer 110 is disposed between the RFIC 160 and the power amplifier IC 155.
摘要翻译：提供了具有高安装密度的高频电路模块。在高频电路模块100中，执行高频信号的发送和接收处理的RFIC 160，放大来自RFIC的发送信号的功率放大器IC 155以及分离从该RFIC输出的发送信号的双工器110 功率放大器IC 155到天线和从天线输入到RFIC 160的接收信号形成在其顶表面上。双工器110设置在RFIC 160和功率放大器IC 155之间。

13. 发明授权

US08472268B2 Non-volatile semiconductor memory and simultaneous writing of data 有权
标题翻译：非易失性半导体存储器和数据同时写入
公开(公告)号：US08472268B2
公开(公告)日：2013-06-25
申请号：US13428678
申请日：2012-03-23
申请人： Koji Hosono , Hiroshi Nakamura , Ken Takeuchi , Kenichi Imamiya
发明人： Koji Hosono , Hiroshi Nakamura , Ken Takeuchi , Kenichi Imamiya
IPC分类号： G11C7/00
CPC分类号： G11C16/0483 , G11C5/145 , G11C7/1006 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5641 , G11C2211/5642 , G11C2211/5643
摘要： A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range.
摘要翻译：非易失性半导体器件具有存储单元阵列，其具有电可擦除可编程非易失性存储器单元，重新编程和检索电路，其临时存储要存储在存储单元阵列中的要编程的数据并感测从存储器单元阵列检索的数据。每个重新编程和检索电路具有选择性地连接到存储单元阵列和传送数据的第一和第二锁存器。控制器控制数据重新编程操作中的重新编程和检索电路以及来自存储单元阵列的数据检索操作。每个重新编程和检索电路都具有多级逻辑操作模式和缓存操作模式。在多级逻辑操作模式中，使用第一和第二锁存器来执行二位四电平数据的高位和低位的重新编程和检索，以将两位四电平数据存储在存储单元之一中在预定的阈值电平范围内。

14. 发明授权

US08333326B2 Stacked barcode reader and stacked barcode reading method 有权
标题翻译：堆叠条形码读取器和堆叠条形码读取方法
公开(公告)号：US08333326B2
公开(公告)日：2012-12-18
申请号：US13240208
申请日：2011-09-22
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： G06K7/10
CPC分类号： G06K7/10712 , G06K7/10851
摘要： In a decoding section of a stacked barcode reader, the brightness values of multiple pixels configuring image data are used to calculate multiple line widths of the bars and the spaces of the stacked barcode. Based on the evaluation value of the frequency distribution of multiple line widths, a priority order of T-sequence is determined. According to this priority order, the T-sequence is measured and the code word corresponding to the T-sequence is obtained. With this, the priority order of the T-sequence is determined based on the evaluation value (such as the maximum value, variance, etc.) of the frequency distribution of the line widths of the bars and the spaces that configure the stacked barcode increasing reading performance of the barcode reader on a stacked barcode while reducing the number of errors in all the decoded code words, despite the level of the resolution of the image pickup optical system.
摘要翻译：在层叠条形码阅读器的解码部分中，使用构成图像数据的多个像素的亮度值来计算条形的多个线宽和堆叠条形码的间隔。基于多行宽度的频率分布的评估值，确定T序列的优先顺序。根据该优先顺序，测定T序列，得到与T序列对应的码字。由此，基于条形的线宽和配置堆叠条形码的间隔的频率分布的评估值（诸如最大值，方差等）来确定T序列的优先顺序尽管图像拾取光学系统的分辨率水平，但是在减少所有解码的码字中的错误数量的同时，在堆叠的条形码上读取条形码读取器的性能。

15. 发明授权

US08280645B2 Method and apparatus of measuring particulate matters 有权
标题翻译：测量颗粒物的方法和装置
公开(公告)号：US08280645B2
公开(公告)日：2012-10-02
申请号：US12122167
申请日：2008-05-16
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： G01N31/00 , F01N3/00
CPC分类号： G01N1/2205 , G01N5/02 , G01N21/67 , G01N21/72
摘要： An apparatus for measuring particulate matters includes a particulate matters collecting part 1 that collects particulate matters contained in exhaust gas from an engine 200 by a collecting filter 41 during a predetermined period while the engine 200 is dynamically driven. A second measuring part 22 continuously measures properties indirectly indicating the mass of the particulate matters contained in the exhaust gas during the predetermined period. A correlation calculating part 82 calculates a correlation between the measurement result of the mass of the particulate matters collected by the particulate matters collecting part 1 and a time integration value of the measurement result in the second measuring part 22 during the predetermined period. A converting part 83 converts the continuous measurement data in the second measuring part 22 into a time series variation of the mass of the particulate matters based on the correlation.
摘要翻译：用于测量颗粒物的装置包括：颗粒物收集部分1，其在发动机200被动态驱动的同时，在预定时间段期间，通过收集过滤器41收集来自发动机200的废气中所含的颗粒物质。第二测量部分22在预定时段内连续测量间接地指示废气中所含的颗粒物质的质量的性质。相关计算部82计算在规定期间内由颗粒物质收集部1收集的颗粒物质的质量与第二测定部22的测定结果的时间积分值的测定结果之间的相关性。 A转换部83基于相关性将第二测量部22中的连续测量数据转换为颗粒物质的时间序列变化。

16. 发明申请

US20120182798A1 Non-Volatile Semiconductor Memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20120182798A1
公开(公告)日：2012-07-19
申请号：US13428678
申请日：2012-03-23
申请人： Koji Hosono , Hiroshi Nakamura , Ken Takeuchi , Kenichi Imamiya
发明人： Koji Hosono , Hiroshi Nakamura , Ken Takeuchi , Kenichi Imamiya
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/0483 , G11C5/145 , G11C7/1006 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5641 , G11C2211/5642 , G11C2211/5643
摘要： A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has first and second latches that are selectively connected to the memory cell array and transfer data. A controller controls the reprogramming and retrieval circuits on a data-reprogramming operation to and a data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches to store the two-bit four-level data in one of the memory cells in a predetermined threshold level range.
摘要翻译：非易失性半导体器件具有存储单元阵列，其具有电可擦除可编程非易失性存储器单元，重新编程和检索电路，其临时存储要存储在存储单元阵列中的要编程的数据并感测从存储器单元阵列检索的数据。每个重新编程和检索电路具有选择性地连接到存储单元阵列和传送数据的第一和第二锁存器。控制器控制数据重新编程操作中的重新编程和检索电路以及来自存储单元阵列的数据检索操作。每个重新编程和检索电路都具有多级逻辑操作模式和缓存操作模式。在多级逻辑操作模式中，使用第一和第二锁存器来执行二位四电平数据的高位和低位的重新编程和检索，以将两位四电平数据存储在存储单元之一中在预定的阈值电平范围内。

17. 发明授权

US08200016B2 Method and apparatus for character string recognition 有权
标题翻译：用于字符串识别的方法和装置
公开(公告)号：US08200016B2
公开(公告)日：2012-06-12
申请号：US12110524
申请日：2008-04-28
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： G06K9/34
CPC分类号： G06K9/348 , G06K2209/01
摘要： A method for character string recognition may include processing image data into black-and-white binary image data, calculating vertical projection data of the binary image data in a vertical direction perpendicular to a direction of the character string while shifting the binary image data, detecting positions exceeding a prescribed border judgment threshold value in the vertical projection data, judging validity of the border judgment threshold value, and deciding whether to segment characters out of the character string based on whether the border judgment threshold value is valid.
摘要翻译：用于字符串识别的方法可以包括将图像数据处理成黑白二值图像数据，在移动二进制图像数据的同时，在垂直于字符串的方向的垂直方向上计算二值图像数据的垂直投影数据，检测判定在垂直投影数据中超过规定的边界判定阈值的位置，判断边界判定阈值的有效性，以及基于边界判定阈值是否有效来决定是否从字符串中分割字符。

18. 发明授权

US08148421B2 Phenylacetic acid derivative 有权
标题翻译：苯乙酸衍生物
公开(公告)号：US08148421B2
公开(公告)日：2012-04-03
申请号：US12440540
申请日：2007-09-10
申请人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
发明人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
IPC分类号： A61K31/382 , C07D335/02
CPC分类号： C07D335/02 , C07D333/24 , C07D333/28 , C07D333/32 , C07D333/38 , C07D333/48
摘要： A compound represented by the formula (1) or a salt thereof ( represents a single bond, or a double bond; R1 represents hydrogen atom, or an alkyl group; R2 and R3 represent hydrogen atom, or an alkyl group; R4 and R5 represent hydrogen atom, hydroxy group, an alkoxyl group, a halogen atom, or a mono- or di-alkyl-substituted amino group; R6 represents hydrogen atom, cyano group, an alkoxycarbonyl group, or carboxy group; R7 represents one or two of substituents on the benzene ring (the substituents are selected from hydrogen atom, a halogen atom, nitro group, cyano group, hydroxy group, amino group, an alkyl group, and an alkoxyl group); A represents a 5-membered or 6-membered non-aromatic heterocyclic ring containing one or two contiguous sulfur atoms (the sulfur atoms may independently form oxide); W represents oxo group, hydrogen atom, an alkyl group, hydroxy group, an alkoxyl group, or a halogen atom; and X represents oxygen atom, or sulfur atom), or a salt thereof, which has a superior suppressing action against prostaglandin E2 production and is useful as an active ingredient of medicaments with reduced adverse reactions such as gastrointestinal disorders.
摘要翻译：由式（1）表示的化合物或其盐（表示单键或双键; R1表示氢原子或烷基; R2和R3表示氢原子或烷基; R4和R5表示氢原子，羟基，烷氧基，卤素原子或一或二烷基取代的氨基; R 6表示氢原子，氰基，烷氧基羰基或羧基; R 7表示一个或两个取代基在苯环上（取代基选自氢原子，卤素原子，硝基，氰基，羟基，氨基，烷基和烷氧基）; A表示5元或6元非含有一个或两个相邻硫原子的杂环（硫原子可以独立地形成氧化物）; W表示氧代基，氢原子，烷基，羟基，烷氧基或卤素原子; X表示氧原子，或硫原子）或其盐对前列腺素E2产生的抑制作用较差，并且可用作具有减少的不良反应如胃肠道疾病的药物的活性成分。

19. 发明授权

US08146818B2 Apparatus and method for symbol information reading 有权
标题翻译：符号信息读取的装置和方法
公开(公告)号：US08146818B2
公开(公告)日：2012-04-03
申请号：US12415431
申请日：2009-03-31
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： G06K7/10
CPC分类号： G06K7/14 , G06K7/1443
摘要： A symbol information reading apparatus may include an imaging element; an image memory structured to store image data; a position detecting processor structured to fetch the image data and structured to detect a position of symbol information. The position detecting processor may include a temporary area judgment unit that structured to calculate a variation of brightness, and structured to judge a temporary area having a possibility of corresponding to the symbol information; a correlation map creating unit that structured to calculate correlation between areas neighboring in a direction perpendicular to the scanning direction, and structured to create a map showing an area provided with large correlation values; a labeling unit that structured to check presence of a basic barcode on the correlation map, and structured to label an area judged as having the basic barcode; and a position determining unit that structured to detect a position of the symbol information recorded.
摘要翻译：符号信息读取装置可以包括成像元件; 构造成存储图像数据的图像存储器; 位置检测处理器，被构造成获取图像数据并构造成检测符号信息的位置。位置检测处理器可以包括临时区域判断单元，其被构造为计算亮度的变化，并被构造为判断具有与符号信息相对应的可能性的临时区域; 相关图生成单元，其构造为计算与扫描方向垂直的方向相邻的区域之间的相关性，并且构造成生成表示具有大相关值的区域的地图; 标记单元，其被构造为检查所述相关图上的基本条形码的存在，并且被构造成标记被判断为具有所述基本条形码的区域; 以及位置确定单元，其被构造成检测记录的符号信息的位置。

20. 发明授权

US08130589B2 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line 有权
标题翻译：半导体存储器件仅使用单通道晶体管对所选字线施加电压
公开(公告)号：US08130589B2
公开(公告)日：2012-03-06
申请号：US13109694
申请日：2011-05-17
申请人： Hiroshi Nakamura , Kenichi Imamiya
发明人： Hiroshi Nakamura , Kenichi Imamiya
IPC分类号： G11C8/00
CPC分类号： G11C8/10 , G11C16/0483 , G11C16/08 , G11C16/3459 , H01L27/115
摘要： A semiconductor memory device has a memory cell array, a first transistor of a first conductivity type, a second transistor of a second conductivity type and a third transistor of the first conductivity type. A source or drain of the first transistor is connected to each of word lines. A drain of the second transistor is connected to a gate of the first transistor. A source of the third transistor is connected to the gate of the first transistor. The gates of the second transistor and the third transistor are not connected, a source of the second transistor is not connected to a drain of the third transistor, and the gate of the second transistor and the drain of the third transistor have different voltage levels corresponding to opposite logic levels each other.
摘要翻译：半导体存储器件具有存储单元阵列，第一导电类型的第一晶体管，第二导电类型的第二晶体管和第一导电类型的第三晶体管。第一晶体管的源极或漏极连接到每条字线。第二晶体管的漏极连接到第一晶体管的栅极。第三晶体管的源极连接到第一晶体管的栅极。第二晶体管和第三晶体管的栅极不连接，第二晶体管的源极不连接到第三晶体管的漏极，并且第二晶体管的栅极和第三晶体管的漏极具有不同的电压电平彼此相反的逻辑水平。

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