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11. 发明授权

US07601241B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07601241B2
公开(公告)日：2009-10-13
申请号：US10784275
申请日：2004-02-24
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： C23C16/50 , C23C16/505 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/30 , C23C16/38 , C23C16/32
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
摘要翻译：一种等离子体处理装置，其具有覆盖有电介质102的反应室1的内壁101的侧壁的90％以上，并具有面积小于侧壁面积10％的接地导电部件21a 并且具有允许来自等离子体的直流电流流过其中的结构，其中由导电构件21形成的DC接地位于等离子体的浮动电位（或等离子体密度）高于浮动的位置位于晶片保持电极14附近的等离子体9的电位，其中存在相对较大的壁切屑。

12. 发明申请

US20080190893A1 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080190893A1
公开(公告)日：2008-08-14
申请号：US12068889
申请日：2008-02-13
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
摘要翻译：本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

13. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

14. 发明申请

US20070175586A1 Plasma Processing Apparatus And Plasma Processing Method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070175586A1
公开(公告)日：2007-08-02
申请号：US11696280
申请日：2007-04-04
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.
摘要翻译：一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中，直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

15. 发明申请

US20060032584A1 Plasma processing apparatus capable of suppressing variation of processing characteristics 审中-公开
标题翻译：能够抑制处理特性的变化的等离子体处理装置
公开(公告)号：US20060032584A1
公开(公告)日：2006-02-16
申请号：US10934510
申请日：2004-09-07
申请人： Naoshi Itabashi , Tsutomu Tetsuka , Atsushi Ito
发明人： Naoshi Itabashi , Tsutomu Tetsuka , Atsushi Ito
IPC分类号： C23F1/00
CPC分类号： H01J37/3299 , H01J37/32183 , H01J37/32211 , H01J37/32935
摘要： A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.
摘要翻译：等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

16. 发明授权

US08546266B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US08546266B2
公开(公告)日：2013-10-01
申请号：US13212909
申请日：2011-08-18
申请人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
发明人： Masahito Mori , Naoyuki Kofuji , Naoshi Itabashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32798 , C23F4/00 , H01J37/32009 , H01J37/32183 , H01J37/32706 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137 , H01L29/517
摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

17. 发明申请

US20130202479A1 PLASMA STERILIZER, PLASMA STERILIZATION SYSTEM, AND PLASMA STERILIZATION METHOD 审中-公开
标题翻译：等离子灭菌器，等离子体灭菌系统和等离子灭菌方法
公开(公告)号：US20130202479A1
公开(公告)日：2013-08-08
申请号：US13823122
申请日：2010-10-21
申请人： Takumi Tandou , Nobuyuki Negishi , Naoshi Itabashi
发明人： Takumi Tandou , Nobuyuki Negishi , Naoshi Itabashi
IPC分类号： A61L2/20
CPC分类号： A61L2/20 , A61L2/14 , G01N21/67 , H05H1/2406 , H05H2001/2443 , H05H2001/2462 , H05H2245/1225
摘要： An apparatus which determines activeness/inactiveness of bacteria in real time by measuring a specific light emission spectrum upon performing sterilization using plasma to highly efficiently sterilize is provided. As solving means, plasma is irradiated on a processing target from a plasma source connected to an alternate-current power supply and light emission of the processing target caused by the irradiation of plasma is detected by a light emission intensity detector unit. Particularly, by detecting wavelength intensity of hydrogen or hydroxyl group, activeness/inactiveness of bacteria can be determined at an early stage. Thus, an appropriate output of a power supply for sterilization can be controlled.
摘要翻译：提供了一种通过使用等离子体进行灭菌来测量特定发光光谱以实现高效灭菌来确定细菌活性/不活动性的装置。作为解决方案，等离子体从连接到交流电源的等离子体源照射在处理目标上，并且由发光强度检测器单元检测由等离子体的照射引起的处理目标的发光。特别地，通过检测氢或羟基的波长强度，可以在早期阶段确定细菌的活性/失活。因此，可以控制用于灭菌的电源的适当输出。

18. 发明授权

US08282767B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08282767B2
公开(公告)日：2012-10-09
申请号：US13031839
申请日：2011-02-22
申请人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
发明人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.
摘要翻译：一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理使用等离子体。该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化，并在气体注射板中异常注入。

19. 发明申请

US20110081655A1 NUCLEIC ACID ANALYZING DEVICE AND NUCLEIC ACID ANALYZER 有权
标题翻译：核酸分析装置和核酸分析仪
公开(公告)号：US20110081655A1
公开(公告)日：2011-04-07
申请号：US12997469
申请日：2009-05-13
申请人： Masatoshi Narahara , Toshiro Saito , Naoshi Itabashi , Jiro Yamamoto , Hiroyuki Uchiyama
发明人： Masatoshi Narahara , Toshiro Saito , Naoshi Itabashi , Jiro Yamamoto , Hiroyuki Uchiyama
IPC分类号： C12Q1/68 , C12M1/34
CPC分类号： G01N21/648
摘要： An object of the present invention relates to distinguishing, from a fluorophore of an unreacted substrate, a single fluorophore attached to a nucleotide that is incorporated into a probe by a nucleic acid synthesis. The present invention relates to a nucleic acid analyzing device that analyzes a nucleic acid in sample by fluorescence, wherein a localized surface plasmon is generated by illumination, and a probe for analyzing the nucleic acid in the sample is on the site where the surface plasmon is generated. According to the present invention, since it is possible to efficiently produce fluorescence intensifying effects due to the surface plasmon and to immobilize the probe to a region within the reach of the fluorescence intensifying effects, it becomes possible to measure a nucleic acid synthesis without removing unreacted nucleotide to which fluorophores are attached.
摘要翻译：本发明的目的在于从未反应的底物的荧光团区分与通过核酸合成并入探针中的核苷酸连接的单个荧光团。本发明涉及通过荧光分析样品中的核酸的核酸分析装置，其中通过照射产生局部表面等离子体激元，并且用于分析样品中的核酸的探针位于表面等离子体为生成。根据本发明，由于可以有效地产生由于表面等离子体激元引起的荧光增强作用并且将探针固定在荧光增强作用范围内的区域，因此可以测量核酸合成而不去除未反应的附着有荧光团的核苷酸。

20. 发明申请

US20080110569A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080110569A1
公开(公告)日：2008-05-15
申请号：US11682382
申请日：2007-03-06
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32935 , H01J37/32972
摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
摘要翻译：本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

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