专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07864236B2 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US07864236B2
公开(公告)日：2011-01-04
申请号：US11196394
申请日：2005-08-04
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14632 , H01L27/14627 , H04N5/37457
摘要： The CMOS image sensor includes a plurality of photoelectric conversion elements arranged in a matrix having a plurality of rows and columns. A plurality of floating junctions are provided, each of which is arranged between one of a plurality of pairs of the photoelectric conversion elements arranged in adjacent two rows and is connected to one of the pairs of the photoelectric conversion elements, so that output signals of the pair of the photoelectric conversion elements may be transferred. Output circuits are connected to a plurality of the floating junctions arranged in the column for reading in common the output signals of the photoelectric conversion elements transferred to these flowing junctions. Output signal lines are provided for each column so as to supply output signals of the output circuits. The output circuits are arranged between the pairs of photoelectric conversion elements adjacently arranged in the row.A CMOS image sensor has a plurality of pixels PD arranged two-dimensionally at predetermined pitches in the vertical direction and horizontal direction and a plurality of output circuits OUT for reading output signals from the pixels PD and the output circuits OUT are arranged between pairs of PD pixels arranged in the row (vertical) direction. The output circuits OUT read in common accumulated signals of pixels composed of the plurality of pixels PD and output them to signal output lines. By use of such a constitution, integration of the pixels arranged in a two-dimensional matrix in the horizontal direction can be improved.
摘要翻译： CMOS图像传感器包括以矩阵形式布置的多个行和列的多个光电转换元件。提供了多个浮点，每个布置在多对布置在相邻的两排之间的多对光电转换元件中的一对之间，并连接到一对光电转换元件中，使得输出信号可以转移一对光电转换元件。输出电路连接到布置在列中的多个浮动结，用于共同读出转移到这些流动接点的光电转换元件的输出信号。为每列提供输出信号线，以便提供输出电路的输出信号。输出电路布置在相邻布置在该行中的光电转换元件对之间。 CMOS图像传感器具有在垂直方向和水平方向上以预定间距二维布置的多个像素PD，并且用于从像素PD和输出电路OUT读取输出信号的多个输出电路OUT布置在PD对之间排列在行（垂直）方向上的像素。输出电路OUT在由多个像素PD组成的像素的公共累积信号中读取，并将其输出到信号输出线。通过这样的结构，可以提高在水平方向上排列成二维矩阵的像素的集成。

12. 发明申请

US20090181501A1 METHOD FOR MANUFACTURING A CHARGE COUPLED DEVICE 失效
标题翻译：制造充电耦合器件的方法
公开(公告)号：US20090181501A1
公开(公告)日：2009-07-16
申请号：US12352799
申请日：2009-01-13
申请人： Hirokazu Sekine , Shu Sasaki
发明人： Hirokazu Sekine , Shu Sasaki
IPC分类号： H01L21/77 , H01L21/266
CPC分类号： H01L21/2652 , H01L29/76816 , H01L29/76875
摘要： A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region 13 having a concentration gradient by injecting ions into the embedded channel 12 through the resist mask, and arranging transfer electrodes 15 at prescribed positions on the first impurity region 13 through the oxide film 14 after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底11中形成嵌入沟道12，通过氧化物膜14在嵌入沟道12上形成抗蚀剂层，使用其透光率变化的光栅掩模曝光抗蚀剂层显影电荷的转移方向，显影曝光的抗蚀剂层以形成具有梯度的抗蚀剂掩模，通过通过抗蚀剂掩模将离子注入到嵌入通道12中形成具有浓度梯度的第一杂质区域13，并将转移电极15设置在在除去抗蚀剂掩模之后通过氧化膜14在第一杂质区13上的规定位置，其中电位分布朝向电荷的传送方向变深。

13. 发明申请

US20050280729A1 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US20050280729A1
公开(公告)日：2005-12-22
申请号：US11154561
申请日：2005-06-17
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H04N5/37457 , H04N5/374
摘要： A CMOS image sensor is provided in which a first group of output circuits arranged in a two-dimensional matrix and a second group of output circuits arranged in a two-dimensional matrix are arranged in the checkered pattern. The second group of output circuits is dislocated from the first group of output circuits by about one-half pitch of the pitchs in the horizontal and vertical directions.
摘要翻译：提供一种CMOS图像传感器，其中布置在二维矩阵中的第一组输出电路和布置在二维矩阵中的第二组输出电路以方格图案布置。第二组输出电路在第一组输出电路中在水平和垂直方向上偏移大约十分之一的间距。

14. 发明授权

US4602289A Solid state image pick-up device 失效
标题翻译：固态摄像装置
公开(公告)号：US4602289A
公开(公告)日：1986-07-22
申请号：US497130
申请日：1983-05-23
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H01L27/148 , H04N5/3728 , H04N5/376 , H04N3/14 , H01L29/78
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A solid-state image pick-up device is provided which comprises a first group of photosensitive pixels formed on a semiconductor substrate of one conductivity type and arranged in a first two-dimensional matrix form, each of the pixels of the first group inclined by 45.degree. with respect to a horizontal direction; a second group of photosensitive pixels vertically offset from the first group of photosensitive pixels by a distance corresponding to about half a vertical pixel pitch, horizontally offset from the first group of photosensitive pixels by a distance corresponding to a horizontal dimension of each pixel, and having oblique gaps between obliquely adjacent ones of the pixels arranged in the matrix forms, each pixel of the second group being inclined by 45.degree. with respect to the horizontal direction; and a plurality of vertical registers arranged to extend in the oblique gaps and gaps between vertically adjacent ones of the pixels of each of the columns of the pixels.
摘要翻译：提供一种固态图像拾取装置，其包括形成在一种导电类型的半导体衬底上并以第一二维矩阵形式布置的第一组感光像素，第一组的每个像素倾斜45 DEG相对于水平方向; 第二组感光像素，垂直偏离第一组感光像素，距离对应于大约一半垂直像素间距的距离，与第一组光敏像素水平偏移一个与每个像素的水平尺寸相对应的距离，并具有排列成矩阵的倾斜相邻像素之间的倾斜间隙形成，第二组的每个像素相对于水平方向倾斜45°; 以及多个垂直寄存器，其布置成在像素的每个列的垂直相邻像素之间的倾斜间隙和间隙中延伸。

15. 发明授权

US08754974B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08754974B2
公开(公告)日：2014-06-17
申请号：US13421230
申请日：2012-03-15
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H04N5/335
CPC分类号： H01L27/14641 , H01L27/14621 , H01L27/14645
摘要： Provided is a solid-state imaging device. Two unit cells are prepared each having three pixels and sharing an output circuit. One of the basic blocks is rotated by 180° such that a reset drain is shared, resulting in a 6-pixel 1-cell, and the cells are disposed in a square lattice pattern or checkerboard pattern. Thus, element isolation regions between the pixels and the output circuit disposed adjacent thereto are minimized, and the number of wirings disposed around the pixels is reduced. As a result, a margin for white scratches and saturation charge amounts may be increased despite the miniaturization of cells.
摘要翻译：提供了一种固态成像装置。制备两个具有三个像素并共享输出电路的单元电池。一个基本块被旋转180°，使得共享复位漏极，导致6像素1单元，并且单元被布置成方形格子图案或棋盘图案。因此，像素与邻近设置的输出电路之间的元件隔离区域被最小化，并且设置在像素周围的布线数量减少。结果，尽管细胞的小型化，但是白色划痕和饱和电荷量的余量可能增加。

16. 发明授权

US07593049B2 CMOS image sensor 失效
标题翻译： CMOS图像传感器
公开(公告)号：US07593049B2
公开(公告)日：2009-09-22
申请号：US10675960
申请日：2003-10-02
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H04N5/335 , H01L31/112
CPC分类号： H01L27/14603 , H04N5/3741 , H04N5/37457 , H04N5/378
摘要： In the pixel portions of the CMOS image sensor, a plurality of unit cells are arranged in the row and column directions at a predetermined pitch respectively in a two-dimensional plain forming a matrix. Each unit cell includes the first and second photodiodes PDa and PDb, the first and second transfer transistors Ta and Tb for transferring the stored charges of the photodiodes to their common floating junctions FJ, the reset transistors R for resetting the potential of the floating junctions FJ, the driver transistors D whose output potential is controlled by the potential of the floating junctions FJ, and the address transistors A for selectively driving the driver transistors D. With the arrangement of the elements and wires in the pixel portions, the integration can be increased and the resolution in the horizontal and vertical directions can be improved.
摘要翻译：在CMOS图像传感器的像素部分中，分别在形成矩阵的二维平面中以预定间距在行和列方向上排列多个单元电池。每个单位单元包括第一和第二光电二极管PDa和PDb，第一和第二传输晶体管Ta和Tb，用于将存储的光电二极管的电荷传送到它们的公共浮点FJ，用于复位浮点FJ的电位的复位晶体管R ，其输出电位由浮动接点FJ的电位控制的驱动晶体管D和用于选择性驱动驱动晶体管D的地址晶体管A.通过像素部分中的元件和电线的布置，可以增加积分并且可以提高水平和垂直方向上的分辨率。

17. 发明申请

US20060262308A1 Stage apparatus and exposure apparatus 失效
标题翻译：舞台装置和曝光装置
公开(公告)号：US20060262308A1
公开(公告)日：2006-11-23
申请号：US11411295
申请日：2006-04-25
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： G01B11/00 , G01B11/02
CPC分类号： G03F7/70858 , G03F7/70775
摘要： At least one exemplary embodiment is directed to a stage apparatus which comprises a movable stage, a mirror for reflecting light from an interferometer to measure the position of the stage, a heating-and cooling unit for heating or cooling the mirror, and a calculator for calculating the shape of the mirror. The shape of the mirror can be changed by controlling the heating-and-cooling unit according to the shape of the mirror obtained from the calculator.
摘要翻译：至少一个示例性实施例涉及一种舞台装置，其包括可移动舞台，用于反射来自干涉仪的光以测量舞台位置的反射镜，用于加热或冷却镜子的加热和冷却单元，以及用于计算镜子的形状。可以通过根据从计算器获得的反射镜的形状控制加热和冷却单元来改变反射镜的形状。

18. 发明授权

US5734178A Imaging system using area sensor 失效
标题翻译：成像系统使用区域传感器
公开(公告)号：US5734178A
公开(公告)日：1998-03-31
申请号：US717078
申请日：1996-10-04
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H01L27/148 , H04N1/04 , H04N1/195 , H04N5/335 , H04N5/349 , H01L31/062 , H01L31/113
CPC分类号： H04N1/1951 , H04N1/19505 , H04N1/19584
摘要： An imaging system using an area sensor in which reading of very fine object such as a manuscript, etc. is permitted to be carried out. This imaging system includes an area sensor in which a plurality of pixels are two-dimensionally arranged so that a pixel pitch in an X direction is an integer multiple A of a pixel width and a pixel pitch in a Y direction is an integer multiple B of a pixel length; object driving means for moving an object by the pixel width/length so that in a condition where one of the pixels corresponds to a part of an object, an image of a unit of 1/AB of the part of the object is formed on one of the pixels; and photoelectric conversion control means for allowing the area sensor to carry out photoelectric conversion in a manner synchronized with movement of the object. The system preferably further includes an optical system for carrying out enlargement or contraction adapted to form an image of the unit of 1/AB of the part of the object on the pixel and picture synthesizing means for AB numbered synthesizing image pick-up signals to obtain an image pick-up pattern of the entirety of the object.
摘要翻译：使用区域传感器的成像系统，其中允许执行诸如原稿等非常精细的物体的读取。该成像系统包括区域传感器，其中多个像素被二维排列，使得X方向上的像素间距为像素宽度的整数倍A，Y方向上的像素间距为整数倍B 像素长度对象驱动装置，用于使物体移动像素宽度/长度，使得在像素中的一个对应于物体的一部分的状态下，物体的部分的1 / AB的单位的图像形成在一个的像素; 以及光电转换控制装置，用于允许区域传感器以与物体的移动同步的方式进行光电转换。该系统优选地还包括用于进行放大或缩小的光学系统，其适于形成像素上的对象部分的1 / AB的单位的图像，以及用于AB编号的合成图像拾取信号的图像合成装置，以获得整个对象的图像拾取模式。

19. 发明授权

US5194724A Solid-state imaging device having signal transferring groups formed of a CCD register and two pixel trains 失效
标题翻译：具有由CCD寄存器和两个像素列组成的信号传送组的固态成像装置
公开(公告)号：US5194724A
公开(公告)日：1993-03-16
申请号：US883373
申请日：1992-05-15
申请人： Hirokazu Sekine
发明人： Hirokazu Sekine
IPC分类号： H01L27/148 , H04N5/335 , H04N5/359 , H04N5/3722
CPC分类号： H01L27/14831
摘要： A solid-state imaging device having a high resolution, comprises a plurality of pixels disposed in rows and columns each converting optical signals into signal charges; a vertical charge coupled device (CCD) register disposed between two pixel trains forming one group for transferring said signal charges; a first charge read-out element for reading out signal charges of each pixel disposed in one pixel train of two pixel trains and for transferring the signal charges to the vertical CCD register; a second charge read-out element for reading out signal charges of each pixel disposed in another pixel train of two pixel trains and for transferring the signal charges to the vertical CCD register; a charge storage element for separately storing signal charges which are separately transferred from respective pixel of each train of two pixel trains through the vertical CCD register; and a horizontal CCD register for transferring signal charges as one line unit, which are sequentially read out from the charge storage element in the order.
摘要翻译：具有高分辨率的固态成像装置包括排列成行和列的多个像素，每个像素将光信号转换为信号电荷; 设置在形成一组的两个像素列之间的垂直电荷耦合器件（CCD）寄存器，用于传送所述信号电荷; 用于读出设置在两个像素列的一个像素列中的每个像素的信号电荷并用于将信号电荷传送到垂直CCD寄存器的第一电荷读出元件; 第二电荷读出元件，用于读出设置在两个像素列的另一个像素列中的每个像素的信号电荷，并用于将信号电荷传送到垂直CCD寄存器; 电荷存储元件，用于分别存储通过垂直CCD寄存器从两个像素列的每个列的各个像素分别传送的信号电荷; 以及用于将信号电荷作为一个线路单元传送的水平CCD寄存器，它们按顺序从电荷存储元件顺序地读出。

20. 发明授权

US4649408A Charge storage type semiconductor device and method for producing same 失效
标题翻译：电荷存储型半导体器件及其制造方法
公开(公告)号：US4649408A
公开(公告)日：1987-03-10
申请号：US551001
申请日：1983-11-15
申请人： Hirokazu Sekine , Katuhiko Morimune , Masaharu Watanabe , Nobuo Suzuki
发明人： Hirokazu Sekine , Katuhiko Morimune , Masaharu Watanabe , Nobuo Suzuki
IPC分类号： H01L21/324 , H01L27/108 , H01L27/148 , H01L29/10 , H01L29/32 , H01L29/768 , H01L29/78 , H01L27/02 , H01L27/14 , H01L29/167
CPC分类号： H01L27/14887 , H01L21/324 , H01L27/10805 , H01L29/1091 , H01L29/32 , H01L29/76841
摘要： A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.
摘要翻译：一种电荷存储型半导体器件，包括半导体衬底和用于在衬底的那些部分中积累电荷的装置，所述装置位于衬底的一个主表面附近。基板具有高缺陷密度的缺陷区域和至少一个不存在晶体缺陷或低缺陷密度的无缺陷区域，并形成在至少基板主表面附近。缺陷区域防止不必要的少数载流子流入电荷存储区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式