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11. 发明授权

US5925641A Farnesyltransferase inhibitor 失效
标题翻译：法呢基转移酶抑制剂
公开(公告)号：US5925641A
公开(公告)日：1999-07-20
申请号：US912870
申请日：1997-08-19
申请人： Yutaka Kanda , Yutaka Saitoh , Kazuhito Akasaka , Tamio Mizukami , Hirofumi Nakano
发明人： Yutaka Kanda , Yutaka Saitoh , Kazuhito Akasaka , Tamio Mizukami , Hirofumi Nakano
IPC分类号： A61K31/495 , A61K31/54 , C07D241/08 , C07D513/08
CPC分类号： C07D513/08 , A61K31/495 , A61K31/54 , C07D241/08
摘要： The present invention relates to a farnesyltransferase inhibitor and an antitumor agent comprising, as an active ingredient, a piperazinedione derivative represented by formula (I): ##STR1## wherein R.sup.1 and R.sup.2 independently represent lower alkyl, lower alkoxyalkyl, substituted or unsubstituted aryl, or aralkyl; R.sup.3 and R.sup.4 independently represent mercapto, lower alkanoylthio, aroylthio, lower alkoxycarbonylthio, or aryloxycarbonylthio, or alternatively R.sup.3 and R.sup.4 are combined together to form disulfide; and R.sup.5 and R.sup.6 independently represent hydrogen, lower alkyl, lower alkoxyalkyl, hydroxyalkyl, lower alkanoyloxyalkyl, aroyloxyalkyl, aralkyloxyalkyl, or aralkyl.
摘要翻译：本发明涉及法呢基转移酶抑制剂和抗肿瘤剂，其包含作为活性成分的由式（I）表示的哌嗪二酮衍生物：其中R1和R2独立地表示低级烷基，低级烷氧基烷基，取代或未取代的芳基或芳烷基; R3和R4独立地表示巯基，低级烷酰硫基，芳酰硫基，低级烷氧基羰基硫基或芳氧基羰基硫基，或者R3和R4组合在一起形成二硫化物; R 5和R 6独立地表示氢，低级烷基，低级烷氧基烷基，羟烷基，低级烷酰氧基烷基，芳氧基烷基，芳烷氧基烷基或芳烷基。

12. 发明授权

US5728830A Farnesyltransferase inhibitor 失效
标题翻译：法呢基转移酶抑制剂
公开(公告)号：US5728830A
公开(公告)日：1998-03-17
申请号：US436458
申请日：1995-05-22
申请人： Yutaka Kanda , Yutaka Saitoh , Kazuhito Akasaka , Tamio Mizukami , Hirofumi Nakano
发明人： Yutaka Kanda , Yutaka Saitoh , Kazuhito Akasaka , Tamio Mizukami , Hirofumi Nakano
IPC分类号： A61K31/495 , A61K31/54 , C07D241/08 , C07D513/08 , C07D285/15
CPC分类号： C07D513/08 , A61K31/495 , A61K31/54 , C07D241/08
摘要： The present invention relates to a farnesyltransferase inhibitor and an antitumor agent comprising, as an active ingredient, a piperazinedione derivative represented by formula (I): ##STR1## wherein R.sup.1 and R.sup.2 independently represent lower alkyl, lower alkoxyalkyl, substituted or unsubstituted aryl, or aralkyl; R.sup.3 and R.sup.4 independently represent mercapto, lower alkanoylthio, aroylthio, lower alkoxycarbonylthio, or aryloxycarbonylthio, or alternatively R.sup.3 and R.sup.4 are combined together to form disulfide; and R.sup.5 and R.sup.6 independently represent hydrogen, lower alkyl, lower alkoxyalkyl, hydroxyalkyl, lower alkanoyloxyalkyl, aroyloxyalkyl, aralkyloxyalkyl, or aralkyl.
摘要翻译： PCT No.PCT / JP94 / 01543 Sec。 371日期：1995年5月22日 102（e）日期1995年5月22日PCT 1994年9月20日PCT公布。出版物WO95 / 08542 日期：1995年3月30日本发明涉及法呢基转移酶抑制剂和抗肿瘤剂，其包含作为活性成分的式（I）表示的哌嗪二酮衍生物：其中R 1和R 2独立地表示低级烷基，低级烷氧基烷基，取代或未取代的芳基或芳烷基; R3和R4独立地表示巯基，低级烷酰硫基，芳酰硫基，低级烷氧基羰基硫基或芳氧基羰基硫基，或者R3和R4组合在一起形成二硫化物; R 5和R 6独立地表示氢，低级烷基，低级烷氧基烷基，羟烷基，低级烷酰氧基烷基，芳氧基烷基，芳烷氧基烷基或芳烷基。

13. 发明授权

US5726468A Compound semiconductor bipolar transistor 失效
标题翻译：复合半导体双极晶体管
公开(公告)号：US5726468A
公开(公告)日：1998-03-10
申请号：US614688
申请日：1996-03-13
申请人： Tomoki Oku , Hirofumi Nakano , Shinichi Miyakuni , Teruyuki Shimura , Ryo Hattori
发明人： Tomoki Oku , Hirofumi Nakano , Shinichi Miyakuni , Teruyuki Shimura , Ryo Hattori
IPC分类号： H01L29/41 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/331 , H01L23/52 , H01L29/205 , H01L29/423 , H01L29/43 , H01L29/73 , H01L29/732 , H01L29/737 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7371 , H01L29/42304
摘要： A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on the lower stage and having an overhanging portion protruding from the lower stage; an insulating film continuously covering a surface of the second active layer, a side surface of the lower stage of the first electrode, and a lower surface and a side surface of the overhanging portion of the upper stage; and a second electrode disposed on the surface of the first active layer at opposite sides of the second active layer, self-aligned with the second active layer. The distance between the second electrode and the second active layer is minimized and the thickness of the second electrode can be about 7000 .ANG., minimizing the resistance of the first active layer and improving high frequency characteristics. Electrical separation between the first and second active layers can be achieved reliably. Recombination at the surface of the second active layer is suppressed.
摘要翻译：半导体器件包括半导体衬底; 设置在所述半导体衬底上的第一有源层; 设置在所述第一有源层上的第二有源层; 第一电极，其包括设置在第二有源层上的下层和设置在下层上的上层，具有从下层突出的突出部; 绝缘膜，连续地覆盖第二有源层的表面，第一电极的下层的侧表面，以及上层的突出部的下表面和侧表面; 以及第二电极，其设置在所述第二有源层的与所述第二有源层自对准的所述第二有源层的相对侧的所述表面上。第二电极和第二有源层之间的距离被最小化，并且第二电极的厚度可以是约7000，使第一有源层的电阻最小化并提高高频特性。可以可靠地实现第一和第二有源层之间的电气分离。第二活性层的表面的重组被抑制。

14. 发明授权

US5670801A Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US5670801A
公开(公告)日：1997-09-23
申请号：US582317
申请日：1996-01-03
申请人： Hirofumi Nakano
发明人： Hirofumi Nakano
IPC分类号： H01L21/28 , H01L21/331 , H01L23/482 , H01L23/522 , H01L29/41 , H01L29/417 , H01L29/45 , H01L29/73 , H01L29/737 , H01L29/201
CPC分类号： H01L29/66318 , H01L23/4821 , H01L23/5221 , H01L29/452 , H01L29/7371 , H01L2924/0002
摘要： A method of fabricating a semiconductor device includes producing a collector layer, a base layer, and an emitter layer on a semiconductor substrate; producing a dummy emitter electrode on a region of the emitter layer; forming a first resist except where the dummy emitter electrode is present; completely removing the dummy emitter electrode to expose the surface of the emitter layer; depositing an emitter electrode material on the first resist and the emitter layer that is exposed by the removal of the dummy emitter electrode; forming a mask on a region of the emitter electrode material film where an emitter electrode is later produced; and etching the emitter electrode material film using the mask; and removing the first resist, thereby producing an emitter electrode layer, a peripheral side part extending upward from the bottom part, and an upper fringe part protruding outward from the peripheral side part perpendicular to the peripheral side part. A minute emitter electrode is produced without employing vacuum evaporation and lift-off techniques that can cause burrs on the emitter electrode. Since a refractory metal can be employed as the emitter electrode material, a highly-reliable emitter electrode is produced with high stability.
摘要翻译：制造半导体器件的方法包括在半导体衬底上制造集电极层，基极层和发射极层; 在发射极层的区域上产生虚拟发射极; 形成除了存在虚拟发射极之外的第一抗蚀剂; 完全去除虚拟发射极电极以暴露出发射极层的表面; 在第一抗蚀剂和通过去除虚拟发射极电极而暴露的发射极层上沉积发射极电极材料; 在发射电极材料膜的稍后产生发射电极的区域上形成掩模; 并使用掩模蚀刻发射电极材料膜; 除去第一抗蚀剂，从而产生发射极电极层，从底部向上延伸的周边部分和从垂直于周边侧部分的周边侧部分向外突出的上边缘部分。在不使用可能引起发射极电极上的毛刺的真空蒸发和剥离技术的情况下制造微小的发射极。由于难熔金属可以用作发射极电极材料，所以产生高可靠性的发射极电极，其稳定性高。

15. 发明授权

US5393344A Apparatus for molten metal plating 失效
标题翻译：熔融金属电镀设备
公开(公告)号：US5393344A
公开(公告)日：1995-02-28
申请号：US195465
申请日：1994-02-14
申请人： Yashichi Oyagi , Hirofumi Nakano
发明人： Yashichi Oyagi , Hirofumi Nakano
IPC分类号： C23C2/00 , B05C21/00
CPC分类号： C23C2/006
摘要： A method of molten metal plating, comprising the steps of: bringing a travelling steel strip into contact with a revolving roll; applying a molten metal on the roll through a nozzle disposed near the roll; and transferring the applied molten metal from the roll to the steel strip by the revolution of the roll. An apparatus for molten metal plating, comprising: a coating roll capable of being brought into contact with a travelling steel strip; a nozzle disposed near the roll for applying a molten metal on the roll; and a source for supplying a molten metal to the nozzle.
摘要翻译：一种熔融金属电镀方法，包括以下步骤：使行进的钢带与旋转辊接触; 通过设置在辊附近的喷嘴将熔融金属施加在辊上; 并且通过辊的旋转将所施加的熔融金属从辊转移到钢带。一种用于熔融金属电镀的设备，包括：能够与行进的钢带接触的涂布辊; 设置在辊附近的用于将熔融金属施加在辊上的喷嘴; 以及用于将熔融金属供应到喷嘴的源。

16. 发明授权

US5151352A Process for producing diterpene compounds 失效
标题翻译：生产二苯并噻吩化合物的方法
公开(公告)号：US5151352A
公开(公告)日：1992-09-29
申请号：US767819
申请日：1991-09-30
申请人： Hirofumi Nakano , Shozo Kawada , Yoichi Uosaki , Yutaka Saito , Katsushige Gomi , Toshiaki Iwazaki
发明人： Hirofumi Nakano , Shozo Kawada , Yoichi Uosaki , Yutaka Saito , Katsushige Gomi , Toshiaki Iwazaki
IPC分类号： A61K31/335 , A61K31/336 , A61P35/00 , C07D303/32 , C07D407/06 , C07D493/10 , C12P17/02 , C12R1/465
CPC分类号： C07D407/06 , C07D303/32 , C07D493/10 , C12P17/02 , C12R1/465 , Y10S435/886
摘要： A clerodane-type diterpene derivative, which has antibacterial and antitumor activities, as well as chemically equivalent tautomers thereof and a process for producing said derivative using a microorganism belonging to the genus Streptomyces.

17. 发明授权

US5082857A Chemical compound 失效
标题翻译：化合物
公开(公告)号：US5082857A
公开(公告)日：1992-01-21
申请号：US612317
申请日：1990-11-13
申请人： Hirofumi Nakano , Mitsunobu Hara , Yohichi Uosaki , Isao Kawamoto , Keiiechi Takahashi , Katsushige Gomi
发明人： Hirofumi Nakano , Mitsunobu Hara , Yohichi Uosaki , Isao Kawamoto , Keiiechi Takahashi , Katsushige Gomi
IPC分类号： C12P17/16 , A61K31/35 , A61P35/00 , C07D493/04 , C12N1/20 , C12P17/06 , C12R1/465
CPC分类号： C07D493/04 , C12P17/06
摘要： The present invention relates to a compound designated "DC114-C" having excellent anti-bacterial and anti-tumor activities. This compound may be obtained by fermentation of a microorganism of the genus Streptomyces, preferably Streptomyces sp. DO-114 (FERM BP-2641).

18. 发明授权

US5004580A Method and apparatus for packing permanent magnet powder 失效
标题翻译：永磁粉末包装方法及装置
公开(公告)号：US5004580A
公开(公告)日：1991-04-02
申请号：US508421
申请日：1990-04-13
申请人： Yoshio Matsuo , Hirofumi Nakano , Masakuni Kamiya , Kezuo Matsui
发明人： Yoshio Matsuo , Hirofumi Nakano , Masakuni Kamiya , Kezuo Matsui
IPC分类号： B22F3/00 , B30B11/00 , H01F41/02
CPC分类号： B29C43/003 , B22F3/004 , B30B11/008 , H01F41/028 , B22F2999/00 , B29C43/006 , B29L2023/00
摘要： A method and apparatus for packing a permanent magnet powder wherein a solenoid coil is provided near the opening of a cylindrical molding space of a mold in such a manner that the direction of the central axis of the solenoid coil substantially coincides with the central axis of the molding space, and an alternating current magnetic field is applied, so that a permanent magnet powder above the opening is packed into the molding space. A magnetic pole may be provided in the center of the solenoid coil. The method of the present invention can be applied to not only a powder for a sintered magnet but also a powder for a bonded magnet.

19. 发明授权

US09111649B2 Tamper resistant semiconductor device with access control 有权
标题翻译：防篡改半导体器件具有访问控制
公开(公告)号：US09111649B2
公开(公告)日：2015-08-18
申请号：US13105324
申请日：2011-05-11
申请人： Yoshifumi Kawamura , Hirofumi Nakano , Hiroyuki Kawai
发明人： Yoshifumi Kawamura , Hirofumi Nakano , Hiroyuki Kawai
IPC分类号： G06F12/14 , G06F21/79 , G11C29/00 , G06F12/02
CPC分类号： G11C29/846 , G06F12/0246 , G06F12/1416 , G06F12/1441 , G06F21/79 , G06F2212/7201 , G06F2212/7209
摘要： There is provided a semiconductor device which is simple in configuration and resistant to tampering. A user input unit receives an authentication code input by a user. A CPU determines whether a user's access is legal based on the input authentication code and activates an enable signal if the user's access is legal. A normal row decoder decodes the row address specified by the CPU and selects a normal memory cell of any row based on the result of decode. A redundancy row decoder prohibits the selection by the normal row decoder when the specified row address agrees with the row address of a predetermined normal memory cell only if the enable signal is activated and selects a redundant memory cell of any row.
摘要翻译：提供了一种结构简单且易于篡改的半导体器件。用户输入单元接收用户输入的认证码。 CPU根据输入的认证码确定用户的访问是否合法，如果用户的访问是合法的，则激活启用信号。正常行解码器对CPU指定的行地址进行解码，并根据解码结果选择任意行的正常存储单元。当指定的行地址与预定的正常存储单元的行地址一致时，只有在使能信号被激活并且选择任何行的冗余存储单元时，冗余行解码器禁止正常行解码器的选择。

20. 发明申请

US20100174876A1 MEMORY MANAGEMENT METHOD, INFORMATION PROCESSING DEVICE, PROGRAM CREATION METHOD, AND PROGRAM 有权
标题翻译：内存管理方法，信息处理设备，程序创建方法和程序
公开(公告)号：US20100174876A1
公开(公告)日：2010-07-08
申请号：US12525404
申请日：2008-02-27
申请人： Hironori Kasahara , Keiji Kimura , Hirofumi Nakano , Takumi Nito , Takanori Maruyama , Tsuyoshi Miura , Tomohiro Tagawa
发明人： Hironori Kasahara , Keiji Kimura , Hirofumi Nakano , Takumi Nito , Takanori Maruyama , Tsuyoshi Miura , Tomohiro Tagawa
IPC分类号： G06F12/00 , G06F9/312 , G06F12/06
CPC分类号： G06F9/5033 , G06F8/453 , G06F9/4881 , G06F9/5016 , G06F12/0284 , G06F12/0646 , G06F2209/483 , G06F2209/5017
摘要： Provided is a method for managing a memory storage region used by a processor. The processor is connected to the memory that stores data accessed while a task is being executed. The memory management method including the steps of: dividing the memory area of the memory into blocks having a plurality of different sizes; selecting a block having a size matching a size of the data accessed while the task is being executed; and storing the data accessed while the task is being executed in the selected block.
摘要翻译：提供了一种用于管理由处理器使用的存储器存储区域的方法。处理器连接到存储器，用于存储在执行任务时访问的数据。存储器管理方法包括以下步骤：将存储器的存储区域划分为具有多个不同大小的块; 选择具有与执行任务期间访问的数据大小匹配的大小的块; 并且在所选择的块中存储在执行任务期间访问的数据。

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