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11. 发明申请

US20080246109A1 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US20080246109A1
公开(公告)日：2008-10-09
申请号：US12073741
申请日：2008-03-10
申请人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L21/782 , H01L27/12
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层结合到具有绝缘表面的基板或绝缘基板上时，使用在一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

12. 发明授权

US08101501B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08101501B2
公开(公告)日：2012-01-24
申请号：US12240186
申请日：2008-09-29
申请人： Hideto Ohnuma , Yoichi Iikubo , Shunpei Yamazaki
发明人： Hideto Ohnuma , Yoichi Iikubo , Shunpei Yamazaki
IPC分类号： H01L21/46
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to thereby form a fragile layer in the bonding substrate. Then, a region of the bonding substrate that is on and near the surface thereof, i.e., a region ranging from a shallower position than the fragile layer to the surface is removed by etching, polishing, or the like. Next, after attaching the bonding substrate to a base substrate, the bonding substrate is separated at the fragile layer to thereby form a semiconductor film over the base substrate. After forming the semiconductor film over the base substrate, a semiconductor element is formed using the semiconductor film.
摘要翻译：提供一种防止杂质进入SOI衬底的半导体器件的制造方法。激发包括选自氢气，氦气或卤素气体中的一种或多种的源气体以产生离子，并将离子加入到接合衬底中，从而在接合衬底中形成脆性层。然后，通过蚀刻，抛光等除去在其表面上及其附近，即从比脆弱层更浅的位置到表面的区域的接合基板的区域。接下来，在将接合基板粘贴到基底基板上之后，在脆性层分离接合基板，从而在基底基板上形成半导体膜。在基底基板上形成半导体膜之后，使用半导体膜形成半导体元件。

13. 发明申请

US20080311726A1 Manufacturing method of SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US20080311726A1
公开(公告)日：2008-12-18
申请号：US12078091
申请日：2008-03-27
申请人： Hideto Ohnuma , Yoichi Iikubo , Takayoshi SATO
发明人： Hideto Ohnuma , Yoichi Iikubo , Takayoshi SATO
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76259 , H01L27/1214 , H01L29/66772
摘要： There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first heat treatment is conducted when a semiconductor layer on the separation layer is bonded to the supporting substrate and separated. A second heat treatment is conducted to the supporting substrate to which the semiconductor layer is bonded. The second heat treatment is conducted at a temperature which is equal to or higher than the temperature of the first heat treatment and does not exceed a strain point of the supporting substrate. When the first heat treatment and the second heat treatment are conducted at the same temperature, a treatment time of the second heat treatment may be set to be longer.
摘要翻译：提供了制造SOI衬底的方法，即使使用具有低允许温度极限的支撑衬底也是可行的。在与半导体衬底的表面一定深度的区域中形成分离层，并且当分离层上的半导体层结合到支撑衬底上并分离时，进行第一热处理。对与半导体层接合的支撑基板进行第二热处理。第二热处理在等于或高于第一热处理的温度的温度下进行，并且不超过支撑基板的应变点。当在相同温度下进行第一热处理和第二热处理时，可以将第二热处理的处理时间设定得更长。

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