会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明申请
    • RESIN MATERIAL MEASURING METHOD AND RESIN MATERIAL MEASURING APPARATUS
    • 树脂材料测量方法和树脂材料测量装置
    • US20100024577A1
    • 2010-02-04
    • US12523182
    • 2008-02-04
    • Noriko EihaHidekane ItoSeiichi Watanabe
    • Noriko EihaHidekane ItoSeiichi Watanabe
    • G01N33/00
    • B29C31/063B29C31/048
    • A resin material measuring method which obtains a prescribed amount of a resin material by measuring liquid resin material, the resin material measuring method including: charging the resin material having a fluidity into an internal space of a cylinder using a cylinder-piston mechanism which includes: the cylinder having a discharge aperture at one end and the internal space being constant in cross-sectional area; and a piston which is inserted in the internal space; determining a necessary movement stroke length of the piston corresponding to the resin material of a prescribed volume according to a relationship between the volume of the resin material and the cross-sectional area and the movement stroke length; discharging the resin material from the cylinder through the discharge aperture by moving the piston by the determined movement stroke length; and cutting the discharged resin material from the resin material located inside the cylinder.
    • 一种通过测量液体树脂材料来获得规定量的树脂材料的树脂材料测量方法,所述树脂材料测量方法包括:使用气缸活塞机构将具有流动性的具有流动性的树脂材料装入圆筒的内部空间,该气缸活塞机构包括: 所述圆筒在一端具有排出孔,并且所述内部空间的横截面积恒定; 以及插入在所述内部空间中的活塞; 根据树脂材料的体积与横截面积和移动冲程长度之间的关系确定对应于规定体积的树脂材料的活塞的必要移动行程长度; 通过使活塞移动所确定的移动行程长度,通过排出孔将树脂材料从圆筒排出; 并且从位于气缸内部的树脂材料切割排出的树脂材料。
    • 13. 发明授权
    • Light guide body
    • 导光体
    • US07286733B2
    • 2007-10-23
    • US11169692
    • 2005-06-30
    • Seiichi Watanabe
    • Seiichi Watanabe
    • G02B6/26
    • G02B6/305G02B6/2808
    • A light guide body includes: at least a front end tapered portion including one end connectable to an optical fiber and the other end, the one end being thinner than the other end; a plurality of second taper portions, each including one end connectable to an optical fiber and the other end, the one end of the second taper portion being thinner than the other end of the second taper portion; and a main body connected to the other ends of the first and second taper portions. The front end tapered portion, the main body, and the second taper portions provide transmission of incident light with division between the one end of the front end tapered portion and the one ends of the second taper portions.
    • 导光体包括:至少前端锥形部分,其包括可连接到光纤的一端,而另一端的一端比另一端更薄; 多个第二锥形部分,每个第二锥形部分包括可连接到光纤的一个端部,另一端部的第二锥形部分的一端比第二锥形部分的另一端更薄; 以及连接到第一和第二锥形部分的另一端的主体。 前端锥形部分,主体和第二锥形部分提供在前端锥形部分的一端与第二锥形部分的一端之间分开的入射光的透射。
    • 17. 发明授权
    • Plasma processing apparatus and method with controlled biasing functions
    • 具有受控偏置功能的等离子体处理装置和方法
    • US06875366B2
    • 2005-04-05
    • US09946491
    • 2001-09-06
    • Masahiro SumiyaNaoki YasuiSeiichi Watanabe
    • Masahiro SumiyaNaoki YasuiSeiichi Watanabe
    • C23C16/44C23C16/50C23C16/509H01L21/00
    • C23C16/5096C23C16/4401H01J37/32165
    • Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
    • 使用等离子体处理诸如半导体器件的样品表面的处理技术。 施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反,使得电极中的任一个被强制地始终用作接地。 因此,流过用于控制等离子体的磁场的电流减少,并且待处理样品的表面的电位分布差减小,从而可以抑制充电损伤。 可以控制入射到待处理样品的离子的能量,以进行高精度蚀刻。 也可以控制等离子体电位,使离子冲击室内壁的强度降低,从而减少从处理装置的内壁脱离的颗粒,以提高生产量。