会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明授权
    • Chalcopyrite type solar cell
    • 黄铜矿型太阳能电池
    • US07964791B2
    • 2011-06-21
    • US11718434
    • 2006-05-24
    • Satoshi YonezawaTadashi Hayashida
    • Satoshi YonezawaTadashi Hayashida
    • H01L31/042B05D5/12
    • H01L31/046H01L31/03928H01L31/0465H01L31/0749Y02E10/541Y02P70/521
    • A first electrode layer 14 is formed on a mica substrate 54, and then first scribe portions 64 are disposed. Next, a light absorbing layer 16 and a buffer layer 18 are disposed on the first electrode layer 14, and through holes (second scribe portions 66) which penetrate from the upper end face of the buffer layer 18 to the lower end face of the mica substrate 54 are formed in a spot-like manner. Then, a second electrode layer 20 is disposed on the buffer layer 18. At this time, the lower end face of the second electrode layer 20 reaches the first electrode layer 14 along the inner peripheral walls of the second scribe portions 66. Furthermore, the second electrode layer 20 is scribed to dispose third scribe portions 70.
    • 第一电极层14形成在云母基板54上,然后设置第一划线部分64。 接下来,在第一电极层14上设置有光吸收层16和缓冲层18,从缓冲层18的上端面贯穿到云母的下端面的通孔(第二划片部66) 基板54以点状形成。 然后,第二电极层20设置在缓冲层18上。此时,第二电极层20的下端面沿着第二划线部66的内周壁到达第一电极层14.此外, 刻划第二电极层20以设置第三划线部分70。
    • 13. 发明申请
    • Solar Cell
    • 太阳能电池
    • US20090242022A1
    • 2009-10-01
    • US12091862
    • 2006-07-04
    • Satoshi Yonezawa
    • Satoshi Yonezawa
    • H01L31/00
    • H01L31/0336B23K26/364B23K26/40B23K2103/12B23K2103/172H01L31/022466H01L31/046H01L31/0463Y02E10/541Y02E10/549Y02P70/521
    • A flexible solar cell is achieved which has a high photoelectric conversion efficiency and no aged deterioration. A cell 10 (unit cell) is formed as a unit, comprising: a lower electrode layer 2 (Mo electrode layer) formed on a flexible mica sheet substrate 1 (substrate); a light absorber layer 3 (CIGS light absorber layer) which contains copper indium gallium selenide; a highly resistant buffer layer thin film 4 formed of InS, ZnS, CdS, or the like on the light absorber layer 3; and an upper electrode layer 5 (TCO) formed of ZuOAl or the like, and furthermore, a contact electrode section 6 for connecting between the upper electrode layer 5 and the lower electrode layer 2 is formed in order to connect a plurality of unit cells 10 in series. The contact electrode section 6 has a Cu/In ratio higher than that of the light absorber layer 3, and in other words, has less In contained therein to have a property of p+ (plus) type or a conductor relative to the light absorber layer 3 which is a p-type semiconductor.
    • 实现了具有高光电转换效率并且没有老化劣化的柔性太阳能电池。 单元10(单元电池)形成为单元,包括:形成在柔性云母片基板1(基板)上的下电极层2(Mo电极层); 包含铜铟镓硒的光吸收层3(CIGS光吸收层); 在光吸收层3上由InS,ZnS,CdS等形成的高电阻缓冲层薄膜4; 和由Zu1l等形成的上电极层5(TCO),此外,形成用于连接上电极层5和下电极层2的接触电极部分6,以便连接多个单元电池10 系列。 接触电极部分6的Cu / In比高于光吸收层3的Cu / In比,换句话说,其中含有较少的具有p +(正)型或相对于光吸收层的导体的性能 3是p型半导体。