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11. 发明授权

US07863754B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07863754B2
公开(公告)日：2011-01-04
申请号：US11374037
申请日：2006-03-14
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
IPC分类号： H01L23/02 , H01L23/48
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.
摘要翻译：提供了一种用于制造低成本，小体积和高度集成的半导体器件的技术。本发明的特征在于，通过使用半导体薄膜形成的半导体元件通过转印技术通过使用半导体衬底形成的半导体元件转印以制造半导体器件。与以往的制造方法相比，能够实现成本低，吞吐量更高的半导体装置的批量生产，能够降低半导体装置的生产成本。

12. 发明授权

US07375006B2 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US07375006B2
公开(公告)日：2008-05-20
申请号：US11542216
申请日：2006-10-04
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

13. 发明申请

US20070032042A1 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US20070032042A1
公开(公告)日：2007-02-08
申请号：US11542216
申请日：2006-10-04
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

14. 发明授权

US07666719B2 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US07666719B2
公开(公告)日：2010-02-23
申请号：US12149131
申请日：2008-04-28
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

15. 发明申请

US20080206959A1 Peeling method 有权
公开(公告)号：US20080206959A1
公开(公告)日：2008-08-28
申请号：US12149131
申请日：2008-04-28
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/20
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

16. 发明授权

US07122445B2 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US07122445B2
公开(公告)日：2006-10-17
申请号：US10619074
申请日：2003-07-15
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

17. 发明授权

US08634041B2 Liquid crystal display device and manufacturing method of liquid crystal display device 有权
标题翻译：液晶显示装置及液晶显示装置的制造方法
公开(公告)号：US08634041B2
公开(公告)日：2014-01-21
申请号：US13466406
申请日：2012-05-08
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
IPC分类号： G02F1/1335
CPC分类号： G02F1/1362 , G02F1/133305 , G02F1/133603 , G02F2001/13613 , H01L27/14678 , H01L2221/68359 , H01L2221/68368 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592
摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
摘要翻译：为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板，布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元，电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

18. 发明授权

US08040456B2 Liquid crystal display device and manufacturing method of liquid crystal display device 有权
标题翻译：液晶显示装置及液晶显示装置的制造方法
公开(公告)号：US08040456B2
公开(公告)日：2011-10-18
申请号：US10756833
申请日：2004-01-14
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
IPC分类号： G02F1/1335
CPC分类号： G02F1/1362 , G02F1/133305 , G02F1/133603 , G02F2001/13613 , H01L27/14678 , H01L2221/68359 , H01L2221/68368 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592
摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
摘要翻译：为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板，布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元，电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

19. 发明授权

US07518692B2 IC card and booking account system using the IC card 有权
标题翻译： IC卡和预订账号系统使用IC卡
公开(公告)号：US07518692B2
公开(公告)日：2009-04-14
申请号：US10739084
申请日：2003-12-19
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
IPC分类号： G02F1/1339 , G02F1/1345
CPC分类号： G06K19/07749 , G06K19/077 , G06K19/07703 , G06Q20/341 , G06Q20/40145 , G07F7/1008
摘要： It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.
摘要翻译：本发明的目的是提供一种高度复杂的功能卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。一种包括显示装置和薄膜集成电路的卡; 其中所述显示装置的驱动由所述薄膜集成电路控制; 通过使用多晶半导体膜形成用于薄膜集成电路的半导体元件和显示装置; 薄膜集成电路和显示装置用卡在第一基板和第二基板之间的树脂密封; 并且第一基板和第二基板是塑料基板。

20. 发明申请

US20090091014A1 Semiconductor Device Having a Flexible Printed Circuit 有权
标题翻译：具有柔性印刷电路的半导体器件
公开(公告)号：US20090091014A1
公开(公告)日：2009-04-09
申请号：US12249523
申请日：2008-10-10
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
IPC分类号： G09G3/36
CPC分类号： H01L27/1266 , H01L21/6835 , H01L27/1214 , H01L2221/68368 , H01L2224/05172 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/07811 , H01L2924/00 , H01L2224/05624 , H01L2924/00014 , H01L2224/05639 , H01L2224/05647 , H01L2224/05664 , H01L2224/05681 , H01L2224/05684 , H01L2224/05124 , H01L2224/05147 , H01L2224/05184
摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.
摘要翻译：为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件，通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

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