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11. 发明授权

US07372674B2 Magnetic tunnel transistor with high magnetocurrent and stronger pinning 失效
标题翻译：磁隧道晶体管具有高磁电流和较强的钉扎作用
公开(公告)号：US07372674B2
公开(公告)日：2008-05-13
申请号：US11187665
申请日：2005-07-22
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , G01R33/06 , G11B5/3906 , G11B2005/3996 , G11C11/16
摘要： A magnetic tunnel transistor (MTT) having a pinned layer that is extended in a stripe height direction and is exchange coupled with an antiferromagnetic (AFM) layer in the extended portion outside of the active area of the sensor. Exchange coupling only the extended portion of the pinned layer with the AFM results in strong, robust pinning of the pinned layer while eliminating the AFM layer from the active portion of the sensor. The presence of an AFM layer within the active area of the sensor would result in an extreme loss of hot electrons resulting in a prohibitively large loss of performance. Therefore, eliminating the AFM layer from the active area provides a very large performance enhancement while maintaining robust pinning.
摘要翻译：一种磁隧道晶体管（MTT），其具有在条高度方向上延伸的钉扎层，并且与传感器的有效区域外的延伸部分中的反铁磁（AFM）层交换耦合。仅仅将被钉扎层的延伸部分与AFM交换，导致固定层的强大而鲁棒的钉扎，同时从传感器的有效部分消除AFM层。在传感器的有效区域内AFM层的存在将导致热电子的极度损失，导致性能的极大损失。因此，从活动区域中消除AFM层提供了非常大的性能提升，同时保持了牢固的固定。

12. 发明授权

US07370404B2 Method for resetting pinned layer magnetization in a magnetoresistive sensor 失效
标题翻译：在磁阻传感器中复位钉扎层磁化的方法
公开(公告)号：US07370404B2
公开(公告)日：2008-05-13
申请号：US10857168
申请日：2004-05-28
申请人： Hardayal Singh Gill , Jinshan Li , Kenneth Donald Mackay , Kouichi Nishioka , Andy Cuong Tran
发明人： Hardayal Singh Gill , Jinshan Li , Kenneth Donald Mackay , Kouichi Nishioka , Andy Cuong Tran
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3909 , G11B5/3932 , G11B2005/0008 , G11B2005/0016 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.
摘要翻译：读头中的自旋阀传感器具有位于自固定AP钉扎层结构和自由层结构之间的间隔层。自由层结构通过邻接自旋阀传感器的第一和第二侧表面的第一和第二硬偏压层纵向稳定。 AP钉扎层结构具有位于第一和第二AP钉扎层（AP 1）和（AP 2）之间的反平行耦合层（APC）。本发明采用了一种复位过程，用于通过在与传感器的各层的主平面平行的平面中对头表面施加锐角的场来设定AP钉扎层的磁矩。复位过程设置每个AP固定层的正确极性，极性符合与自旋阀传感器一起使用的处理电路。

13. 发明授权

US07333304B2 CPP sensor having hard bias stabilization placed at back edge of the stripe 失效
标题翻译：具有硬偏置稳定性的CPP传感器放置在条的后边缘
公开(公告)号：US07333304B2
公开(公告)日：2008-02-19
申请号：US10981903
申请日：2004-11-04
申请人： Hardayal Singh Gill , Kuok San Ho
发明人： Hardayal Singh Gill , Kuok San Ho
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A current perpendicular to plane (CPP) having hard magnetic bias layers located at the back of the sensor, opposite the air bearing surface. The bias layer is magnetostatically coupled with the free layer to bias the free layer in a desired direction parallel with the ABS. First and second magnetic shield layers may be provided at either lateral side of the sensor to provide exceptional track width definition. The placement of the bias layer at the back of the sensor makes possible the addition of magnetic shields at the sides of the sensor.
摘要翻译：垂直于平面（CPP）的电流，其具有位于传感器背面的与空气轴承表面相对的硬磁偏置层。偏置层与自由层静磁耦合，以在平行于ABS的期望方向上偏置自由层。第一和第二磁屏蔽层可以设置在传感器的两侧，以提供卓越的轨道宽度定义。偏置层位于传感器背面的位置可以在传感器的侧面添加磁屏蔽。

14. 发明授权

US07330340B2 Magnetoresistive sensor with free layer bias adjustment capability 失效
标题翻译：具有自由层偏置调节功能的磁阻传感器
公开(公告)号：US07330340B2
公开(公告)日：2008-02-12
申请号：US11052968
申请日：2005-02-07
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/127
CPC分类号： G11B5/39
摘要： A magnetoresistive sensor having a free layer biased by an in stack bias layer that has a magnetic moment canted with respect to the ABS, such that the magnetic moment of the biasing layer has a longitudinal component in a direction parallel with the ABS and a component in a transverse direction that is perpendicular to the ABS. The transverse component of the bias layer moment creates a balancing field in the free layer that counterbalances the coupling field in the free layer generated by the pinned layer. The counterbalance field provided by the canted moment of the biasing layer is especially useful in a tunnel valve sensor, because the very thin barrier layer of the tunnel valve design generates a strong coupling field in the free layer and this coupling field cannot be offset by a field from the sensor current.
摘要翻译：一种磁阻传感器，其具有由堆叠偏置层偏置的自由层，其具有相对于ABS倾斜的磁矩，使得偏置层的磁矩在与ABS平行的方向上具有纵向分量，垂直于ABS的横向。偏置层矩的横向分量在自由层中产生平衡场，其平衡由被钉扎层产生的自由层中的耦合场。由于偏移层的倾斜力矩提供的平衡场在隧道阀传感器中特别有用，因为隧道阀设计的非常薄的阻挡层在自由层中产生强耦合场，并且该耦合场不能被场从传感器电流。

15. 发明授权

US07330339B2 Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads 失效
标题翻译：结构为CPP GMR和隧道阀头提供增强的自锁定
公开(公告)号：US07330339B2
公开(公告)日：2008-02-12
申请号：US10627506
申请日：2003-07-25
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： G11B5/37
摘要： A magnetic head having improved self-pinning. The head includes a sensor having an antiparallel (AP) pinned layer structure, where the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer. A pair of compression layers are positioned towards opposite track edges of the sensor. The compression layers provide compressive stress to the sensor.
摘要翻译：具有改善的自锁定的磁头。头包括具有反平行（AP）钉扎层结构的传感器，其中AP钉扎层结构包括至少两个具有彼此自对抗平行的磁矩的钉扎层，钉扎层被AP耦合层分开。一对压缩层朝传感器的相对的轨道边缘定位。压缩层向传感器提供压缩应力。

16. 发明授权

US07313856B2 Method of manufacturing a magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs 有权
标题翻译：制造具有用于固定反平行耦合突片的薄反铁磁层的磁阻传感器的方法
公开(公告)号：US07313856B2
公开(公告)日：2008-01-01
申请号：US11241660
申请日：2005-09-29
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/187 , B05D5/12
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052 , Y10T428/1121 , Y10T428/115
摘要： A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and forming a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer. A cap layer is deposited over the thin AFM layer.
摘要翻译：提供了一种具有薄反铁磁（AFM）层交换的自旋阀传感器的制造方法，该交换耦合到引线重叠区域中的自固定反平行耦合偏置层。自旋阀传感器包括形成反向平行耦合到第一和第二无源区域中的自由层的铁磁偏置层，其中第一和第二引线层与自旋阀传感器层重叠，并形成耦合到偏置层的薄AFM层交换以提供钉扎场到偏置层。覆盖层沉积在薄的AFM层上。

17. 发明授权

US07298595B2 Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors 失效
标题翻译：差分GMR传感器在第一和第二自固定GMR传感器的自由层之间具有多层偏置结构
公开(公告)号：US07298595B2
公开(公告)日：2007-11-20
申请号：US10672992
申请日：2003-09-26
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetizations for the first and second free layers without using an antiferromagnetic layer. The gap layer may include four NiFe ferromagnetic layers separated with three interlayers. The gap may also be formed to include a structure defined by Ta/Al2O3/NiFeCr/CuOx. One of the pinned layer may include three ferromagnetic layers so that the top ferromagnetic layer of the bottom pinned layer and the bottom ferromagnetic layer of the bottom pinned layer have a magnetization 180° out of phase. The self-pinned GMR sensors may include synthetic free layers that includes a first free sublayer, an interlayer and a second free sublayer that are biased 180° out of phase.
摘要翻译：一种提供自固定差动GMR传感器和自固定差动GMR传感器的方法。差分GMR头包括由间隙层隔开的两个自固定GMR传感器。间隙层可以用作偏置结构，以在不使用反铁磁层的情况下为第一和第二自由层提供反平行磁化。间隙层可以包括用三个中间层分离的四个NiFe铁磁层。该间隙也可以形成为包括由Ta / Al 2 O 3 / NiFeCr / CuO x限定的结构。被钉扎层中的一个可以包括三个铁磁层，使得底部被钉扎层的顶部铁磁层和底部被钉扎层的底部铁磁层具有异相180°的相位。自固定GMR传感器可以包括合成自由层，其包括偏相180°异相的第一自由子层，中间层和第二自由子层。

18. 发明授权

US07218488B2 Method and apparatus for reducing the thickness of a sensor stack in a current-perpendicular-to-plane GMR/tunnel valve sensor 有权
标题翻译：用于减小电流垂直于平面的GMR /隧道阀传感器中的传感器堆叠的厚度的方法和装置
公开(公告)号：US07218488B2
公开(公告)日：2007-05-15
申请号：US10811526
申请日：2004-03-29
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A method and apparatus for reducing the thickness of a sensor stack in a current-perpendicular-to-plane (CPP) GMR/tunnel valve (TV) sensor is disclosed. A layer of alpha-Fe2O3 having a high coercivity is formed adjacent the active areas for pinning the bias layer.
摘要翻译：公开了用于减小电流垂直平面（CPP）GMR /隧道阀（TV）传感器中的传感器堆叠的厚度的方法和装置。在有源区域附近形成具有高矫顽力的α-Fe 2 O 3 3层以钉住偏置层。

19. 发明授权

US07180715B2 Canted easy axis in self-pinned layers 有权
标题翻译：自固定层中的易取轴
公开(公告)号：US07180715B2
公开(公告)日：2007-02-20
申请号：US10788688
申请日：2004-02-26
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/39
CPC分类号： G11B5/1272 , G11B5/33
摘要： A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer, the AP pinned layer structure including at least two AP-pinned layers having magnetic moments that are self-pinned antiparallel to each other, the AP-pinned layers being separated by an AP coupling layer. An easy axis of a first or both of the AP-pinned layers is oriented at an angle of at least 5° from the ABS along a plane of the first AP-pinned layer.
摘要翻译：具有自由层和与所述自由层间隔开的反平行（AP）钉扎层结构的磁头，所述AP钉扎层结构包括至少两个具有彼此反平行自对准的磁矩的AP钉扎层， AP钉扎层由AP耦合层分离。所述AP钉扎层中的第一或两者的容易轴线沿着所述第一AP钉扎层的平面与所述ABS至少5°的角度定向。

20. 发明授权

US07154716B2 Tunnel valve free layer stabilization system and method using additional current in lead 有权
标题翻译：隧道阀自由层稳定系统和使用额外电流的铅的方法
公开(公告)号：US07154716B2
公开(公告)日：2006-12-26
申请号：US10452561
申请日：2003-05-30
申请人： Hardayal Singh Gill
发明人： Hardayal Singh Gill
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3909 , G11B5/3932
摘要： A magnetic tunnel junction (MTJ) sensor system and a method for fabricating the same. A sensor includes a pinned layer, a free layer, and a tunnel barrier layer positioned between the pinned layer and the free layer. The pinned layer, the free layer, and the tunnel barrier layer define a track width. The pinned layer, the free layer, and the tunnel barrier layer are positioned between first and second lead layers. A pair of hard bias layers generate a hard bias magnetic field. Insulating layers are positioned between the hard bias layers and the first and second lead layers. In use, a sensor magnetic field generated by the current is opposite and substantially equal to the hard bias magnetic field at a center of the track width of the sensor.
摘要翻译：磁隧道结（MTJ）传感器系统及其制造方法。传感器包括被钉扎层，自由层和位于被钉扎层和自由层之间的隧道势垒层。被钉扎层，自由层和隧道势垒层限定轨道宽度。钉扎层，自由层和隧道势垒层位于第一和第二引线层之间。一对硬偏置层产生硬偏磁场。绝缘层位于硬偏压层和第一和第二引线层之间。在使用中，由电流产生的传感器磁场与传感器的磁道宽度的中心处的硬偏置磁场相反并且基本上等于。

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