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11. 发明授权

US4134766A Dye image forming process 失效
标题翻译：染料成像工艺
公开(公告)号：US4134766A
公开(公告)日：1979-01-16
申请号：US843704
申请日：1977-10-19
申请人： Shoji Kikuchi , Hajime Wada , Takaya Endo , Hidetaka Deguchi , Toshiki Komaita , Wataru Ishikawa
发明人： Shoji Kikuchi , Hajime Wada , Takaya Endo , Hidetaka Deguchi , Toshiki Komaita , Wataru Ishikawa
IPC分类号： G03C7/32 , C09B53/00 , G03C7/305 , G03C7/34 , G03C7/00 , G03C1/40
CPC分类号： G03C7/30541 , G03C7/30523
摘要： Cyan couplers of the 2-equivalent type having the formula ##STR1## wherein C.sub.p, R.sub.1 -R.sub.6, Z, n, p and q are herein defined are described. These couplers are useful in photography, and photographic materials and developers incorporating these couplers are also described.
摘要翻译：本文定义了具有式“IMAGE”的2-等价类型的青色成色剂，其中Cp，R1-R6，Z，n，p和q在此定义。这些耦合器在摄影中是有用的，并且还描述了结合这些耦合器的照相材料和显影剂。

12. 发明授权

US07771038B2 Printing apparatus and printing method 有权
标题翻译：印刷装置和印刷方法
公开(公告)号：US07771038B2
公开(公告)日：2010-08-10
申请号：US10530174
申请日：2003-10-02
申请人： Midori Araya , Keisuke Haba , Hajime Wada , Naruhiko Katagiri , Yu Shinagawa
发明人： Midori Araya , Keisuke Haba , Hajime Wada , Naruhiko Katagiri , Yu Shinagawa
IPC分类号： B41J2/17
CPC分类号： B41J11/0065 , B41J11/0015 , B41J13/02 , B41J13/076
摘要： A printing apparatus is provided. The printing apparatus forms a dot in a desired position of a printing sheet by ejecting an ink droplet from a nozzle. A static electricity eliminating mechanism eliminates static electricity generated on the printing sheet by a conductive portion that is arranged in a position to which the ink droplet is ejected from the nozzle or an upstream side of such position on a path through which the printing sheet passes. The conductive portion is formed in at least one of a sheet feed roller and an idle roller that carry the printing sheet. The sheet feed roller or the idle roller is formed by coating a predetermined insulating coating on a surface of a conductive rod-shaped member. The conductive portion is formed by stripping off a part of the coating on the sheet feed roller or the idle roller.
摘要翻译：提供了一种打印装置。打印装置通过从喷嘴喷射墨滴而在打印纸的期望位置形成点。静电消除机构通过布置在墨滴从喷嘴喷射的位置或打印纸通过的路径上游侧的导电部分消除印刷纸上产生的静电。导电部分形成在承载打印片材的片材进给辊和空转辊中的至少一个中。送纸辊或空转辊是通过在导电棒状构件的表面上涂覆预定的绝缘涂层而形成的。导电部分通过剥离片材进给辊或空转辊上的涂层的一部分而形成。

13. 发明申请

US20090304565A1 METHOD FOR REMOVING LEAD FROM CEMENT BURNING FURNACE 有权
标题翻译：从水泥中除去铅的方法
公开(公告)号：US20090304565A1
公开(公告)日：2009-12-10
申请号：US12446966
申请日：2007-10-19
申请人： Junichi Terasaki , Hajime Wada , Takahiro Hayashida , Soichiro Okamura
发明人： Junichi Terasaki , Hajime Wada , Takahiro Hayashida , Soichiro Okamura
IPC分类号： B01D53/64
CPC分类号： C22B7/02 , C04B7/365 , C22B5/16 , C22B13/025 , Y02P10/214
摘要： A method to efficiently reduce lead content of cement without exerting influence upon quality of the cement. The method comprises the steps of: controlling O2 concentration of combustion gas in an inlet end of a cement kiln to 5% or lower and/or CO concentration thereof 1000 ppm or more; extracting a part of combustion gas from the cement kiln and collecting dust contained in the combustion gas; and collecting lead from the dust collected. With this, the area where raw material temperature in the cement kiln is between 800° and 1100° can be turned into reducing atmosphere to sharply increase volatilization rate of lead, and collection of lead from the dust allows lead content of cement to efficiently be reduced without exerting influence upon quality of the cement. Together with the control described above, where the inner diameter of the cement kiln is D and the distance from the inlet end of the cement kiln longitudinally into the kiln is L, supplying fuel and/or raw material including inflammable material to the area where L/D of the cement kiln is 0 or more and 12 or lower causes securely maintaining the reducing atmosphere of the area.
摘要翻译：一种有效降低水泥铅含量而不影响水泥质量的方法。该方法包括以下步骤：将水泥窑入口端的燃烧气体的O 2浓度控制在5％以下，和/或其CO浓度为1000ppm以上; 从水泥窑中提取一部分燃烧气体并收集燃烧气体中含有的灰尘; 并从收集的灰尘中收集铅。因此，水泥窑的原料温度在800°〜1100°之间的区域可以转化为还原气氛，从而大大提高铅的挥发率，从灰尘中收集铅可以有效降低水泥的铅含量而不影响水泥的质量。连同上述控制，其中水泥窑的内径为D，水泥窑的入口端纵向进入窑的距离为L，将包括可燃材料的燃料和/或原料供应到L / D为0以上且12以下的原因可靠地维持该区域的还原气氛。

14. 发明授权

US07242102B2 Bond pad structure for copper metallization having increased reliability and method for fabricating same 有权
标题翻译：用于铜金属化的焊盘结构具有增加的可靠性及其制造方法
公开(公告)号：US07242102B2
公开(公告)日：2007-07-10
申请号：US10887585
申请日：2004-07-08
申请人： Inkuk Kang , Hiroyuki Kinoshita , Boon-Yong Ang , Hajime Wada , Simon S Chan , Cinti X Chen
发明人： Inkuk Kang , Hiroyuki Kinoshita , Boon-Yong Ang , Hajime Wada , Simon S Chan , Cinti X Chen
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/28
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/02166 , H01L2224/05073 , H01L2224/05147 , H01L2224/05181 , H01L2224/05554 , H01L2224/05624 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042
摘要： According to one exemplary embodiment, a structure in a semiconductor die comprises a metal pad situated in an interconnect metal layer, where the metal pad comprises copper. The structure further comprises an interlayer dielectric layer situated over the metal pad. The structure further comprises a terminal via defined in the interlayer dielectric layer, where the terminal via is situated on the metal pad. The terminal via extends along only one side of the metal pad. The structure further comprises a terminal metal layer situated on the interlayer dielectric layer and in the terminal via. The structure further comprises a dielectric liner situated on the terminal metal layer, where a bond pad opening is defined in the dielectric liner, and where the bond pad opening exposes a portion of the terminal metal layer. The interlayer dielectric layer is situated between the exposed portion of the terminal metal layer and metal pad.
摘要翻译：根据一个示例性实施例，半导体管芯中的结构包括位于互连金属层中的金属焊盘，其中金属焊盘包括铜。该结构还包括位于金属焊盘上的层间电介质层。该结构还包括限定在层间电介质层中的端子通孔，其中端子通孔位于金属焊盘上。端子通孔仅沿着金属焊盘的一侧延伸。该结构还包括位于层间电介质层和端子通孔中的端子金属层。所述结构还包括位于所述端子金属层上的电介质衬垫，其中所述电介质衬垫中限定了焊盘开口，并且所述接合焊盘开口露出所述端子金属层的一部分。层间绝缘层位于端子金属层的暴露部分和金属焊盘之间。

15. 发明授权

US06910757B2 Waste liquid treating device and liquid ejecting apparatus incorporating the same 有权
标题翻译：废液处理装置和包括该废液处理装置的液体喷射装置
公开(公告)号：US06910757B2
公开(公告)日：2005-06-28
申请号：US10458749
申请日：2003-06-11
申请人： Masatomo Kanamitsu , Naruhiko Katagiri , Hajime Wada , Keisuke Haba , Midori Araya , Masahiro Isono
发明人： Masatomo Kanamitsu , Naruhiko Katagiri , Hajime Wada , Keisuke Haba , Midori Araya , Masahiro Isono
IPC分类号： B41J2/165 , B41J2/17
CPC分类号： B41J2/16523 , B41J2/1721 , B41J2002/1742
摘要： A liquid ejecting head is operable to move in a first direction. A platen is opposed to the liquid ejecting head to support an object to which a liquid droplet is ejected from the liquid ejecting head and to define a gap between the liquid ejecting head and the object. The platen is formed with a groove hole to which a liquid droplet deviated from an edge of the object is disposed, and through holes formed in a bottom portion of the groove hole and arranged in the first direction. A tray member is arranged below the platen to receive liquid dropped through the through holes. A first liquid absorber is provided in the groove hole. A second liquid absorber is provided in the tray member. At least one liquid leading member extends through at least one of the through holes to lead liquid absorbed by the first liquid absorber to the second liquid absorber.
摘要翻译：液体喷射头可操作以沿第一方向移动。压板与液体喷射头相对，以支撑从液体喷射头喷射液滴的物体并限定液体喷射头与物体之间的间隙。压板形成有凹槽，液体从物体的边缘偏离的液滴，以及形成在凹槽孔的底部并沿第一方向布置的通孔。托盘构件布置在压板下方以接收通过通孔滴落的液体。第一液体吸收器设置在凹槽中。第二液体吸收器设置在托盘构件中。至少一个液体引导构件延伸穿过至少一个通孔以将由第一液体吸收器吸收的液体引导到第二液体吸收器。

16. 发明授权

US06642589B2 Semiconductor device having pocket and manufacture thereof 有权
公开(公告)号：US06642589B2
公开(公告)日：2003-11-04
申请号：US10266689
申请日：2002-10-09
申请人： Hajime Wada , Kenichi Okabe , Kou Watanabe
发明人： Hajime Wada , Kenichi Okabe , Kou Watanabe
IPC分类号： H01L218238
CPC分类号： H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L29/1083
摘要： A semiconductor device has first and second active regions defined on the principal surface of a silicon substrate, a first n-channel MOS transistor formed in the first active region and having first extension regions and first pocket regions being deeper than the first extension regions and being doped with indium at a first concentration, and a second n-channel MOS transistor formed in the second active region and having second extension regions and second pocket regions being deeper than the second extension regions and being doped with indium at a second concentration lower than the first concentration. Boron ions may be implanted into the second pocket regions. The pocket regions can be formed by implanting indium ions and an increase in leak current to be caused by indium implantation can be reduced.

17. 发明授权

US5029025A Magnetic tape recording and playback apparatus 失效
标题翻译：磁带录音和播放设备
公开(公告)号：US5029025A
公开(公告)日：1991-07-02
申请号：US362713
申请日：1989-06-07
申请人： Hajime Wada
发明人： Hajime Wada
IPC分类号： G11B15/10 , G11B15/18
CPC分类号： G11B15/103 , G11B15/1883
摘要： A magnetic tape recording and playback apparatus includes a tape driving system for driving a tape, a recording/playing system for recording/playing/erasing and a linking device for mechanically linking the operations of the tape driving system with the recording/playing system. The tape driving system includes a motor, a gear train coupled to the motor and a reel shaft for rotating reels of the cassette. The gear train includes an planetary gear which swings. The planetary gear selectively rotates the reel shaft in correspondence with respective operation modes of the magnetic recording and playback apparatus. The linking device includes a cam coupled to the planetary gear and a head base mounting a recording/playing head. The cam transmits the driving power from the motor to the head base through the planetary gear. The head base moves corresponding to the shape of the cam and in association with the operation of the planetary gear. Operation such as recording and playing is carried out on the tape by the movement of the head base.

18. 发明授权

US4138264A Silver halide emulsion containing two equivalent type coupler for use in photography 失效
标题翻译：含有两种用于摄影的等效型耦合器的卤化银乳剂
公开(公告)号：US4138264A
公开(公告)日：1979-02-06
申请号：US872387
申请日：1978-01-26
申请人： Hajime Wada , Kazuhiko Kimura , Haruo Hori , Shoji Kikuchi , Takaya Endo
发明人： Hajime Wada , Kazuhiko Kimura , Haruo Hori , Shoji Kikuchi , Takaya Endo
IPC分类号： G03C7/305 , G03C7/333 , G03C8/10 , G03C1/40
CPC分类号： G03C7/30523 , G03C7/3335 , G03C8/10
摘要： A novel two-equivalent naphthol or phenol type cyan coupler is disclosed wherein the active position thereof has a split-off group which contains a bonding group of the formula ##STR1## wherein R is hydrogen atom or a divalent organic group. The present coupler is incorporated into a photographic material containing a photosensitive emulsion layer.
摘要翻译：公开了一种新颖的双等效萘酚或苯酚型青色成色剂，其中其活性位置具有分开基团，其含有式（Ia）的键合基团，其中R是氢原子或二价有机基团。本发明的成色剂结合到含感光乳剂层的照相材料中。

19. 发明授权

US07928515B2 Semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07928515B2
公开(公告)日：2011-04-19
申请号：US12136955
申请日：2008-06-11
申请人： Masayoshi Asano , Yoshiyuki Suzuki , Tetsuya Ito , Hajime Wada
发明人： Masayoshi Asano , Yoshiyuki Suzuki , Tetsuya Ito , Hajime Wada
IPC分类号： H01L29/00
CPC分类号： H01L29/66181 , H01L21/84 , H01L27/0629 , H01L27/1052 , H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L29/945
摘要： A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of the substrate for the trench capacitor, a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film. The cell plate electrode includes a first poly silicon film formed on the dielectric film partially filling the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench. The second poly silicon film includes a sufficient film thickness for forming gate electrodes, wherein the impurity concentration of the first poly silicon film is higher than the impurity concentration of the second poly silicon film.
摘要翻译：一种半导体器件包括具有不同导电类型的栅电极和同一衬底上的沟槽电容器型存储器的双栅极CMOS逻辑电路，包括用于沟槽电容器的衬底的沟槽，形成在沟槽中的电介质膜，第一多晶硅形成在沟槽内部的膜，以及位于电介质膜上方的电池板电极。电池板电极包括形成在部分地填充沟槽的电介质膜上的第一多晶硅膜和形成在第一多晶硅膜上以完全填充沟槽的第二多晶硅膜。第二多晶硅膜包括用于形成栅电极的足够的膜厚度，其中第一多晶硅膜的杂质浓度高于第二多晶硅膜的杂质浓度。

20. 发明授权

US07220643B1 System and method for gate formation in a semiconductor device 有权
标题翻译：用于半导体器件中栅极形成的系统和方法
公开(公告)号：US07220643B1
公开(公告)日：2007-05-22
申请号：US11147207
申请日：2005-06-08
申请人： Hajime Wada , Jaeyong Park , Hirokazu Tokuno , Rinji Sugino
发明人： Hajime Wada , Jaeyong Park , Hirokazu Tokuno , Rinji Sugino
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/7624
摘要： A method for forming a memory device is provided. A memory cell stack is formed over a substrate. The memory cell stack includes a first layer formed over the substrate and a second layer formed over the first layer. A dielectric layer is formed over the first and second layers and the substrate. The dielectric layer is etched to expose at least an upper surface of the memory cell stack. The second layer is etched to recess the second layer with respect to an upper surface of the dielectric layer. A silicide region is formed on the second layer in the memory cell stack, where the silicide region in each memory cell stack is bounded by the dielectric layer extending above the upper surface of the memory cell stack.
摘要翻译：提供了一种用于形成存储器件的方法。在衬底上形成存储单元堆叠。存储单元堆叠包括形成在衬底上的第一层和形成在第一层上的第二层。介电层形成在第一层和第二层和衬底之上。蚀刻电介质层以暴露存储单元堆叠的至少上表面。蚀刻第二层以使第二层相对于电介质层的上表面凹陷。在存储单元堆叠中的第二层上形成硅化物区域，其中每个存储单元堆叠中的硅化物区域由在存储单元堆叠的上表面上方延伸的介电层界定。

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