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11. 发明授权

US07443005B2 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US07443005B2
公开(公告)日：2008-10-28
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L29/78
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

12. 发明授权

US08357561B2 Method of fabricating backside illuminated image sensor 有权
标题翻译：制造背面照明图像传感器的方法
公开(公告)号：US08357561B2
公开(公告)日：2013-01-22
申请号：US13044407
申请日：2011-03-09
申请人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
发明人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
IPC分类号： H01L31/18 , H01L21/71 , H01L31/0232
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14627 , Y10S438/977
摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate having a front surface and a back surface; forming an alignment mark at the front surface of the substrate, wherein the alignment mark is detectable for alignment from the back surface; and processing the substrate from the back surface by performing registration from the back surface and using the alignment mark as a reference.
摘要翻译：提供了制造背面照明图像传感器的方法。示例性方法可以包括提供具有前表面和后表面的基底; 在基板的前表面形成对准标记，其中对准标记可从后表面对准检测; 并且通过从背面进行配准并使用对准标记作为基准，从背面处理基板。

13. 发明申请

US20100087029A1 METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：背景照明图像传感器的制作方法
公开(公告)号：US20100087029A1
公开(公告)日：2010-04-08
申请号：US12634080
申请日：2009-12-09
申请人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
发明人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14627 , Y10S438/977
摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.
摘要翻译：提供了制造背面照明图像传感器的方法。示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

14. 发明申请

US20070207566A1 Method of fabricating backside illuminated image sensor 有权
标题翻译：制造背面照明图像传感器的方法
公开(公告)号：US20070207566A1
公开(公告)日：2007-09-06
申请号：US11369054
申请日：2006-03-06
申请人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
发明人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14627 , Y10S438/977
摘要： A method for fabricating a back-side illuminated image sensor includes providing a semiconductor substrate having a front surface and back surface, providing a plurality of transistors, metal interconnects, and metal pads on front surface of the substrate, bonding a supporting layer to the front surface of the substrate, thinning-down the semiconductor substrate from the back surface, clearing-out a region of the semiconductor substrate from the back surface that covers a fine alignment mark by performing registration from the back surface and using a global alignment mark as a reference, and processing the back surface of the substrate by performing registration from the back surface and using the fine alignment mark as a reference.
摘要翻译：制造背面照明图像传感器的方法包括提供具有前表面和后表面的半导体衬底，在衬底的前表面上提供多个晶体管，金属互连和金属焊盘，将支撑层粘合到前面基板的表面，从背面减薄半导体基板，通过从后表面进行配准，从覆盖微细对准标记的背面清除半导体基板的区域，并使用全局对准标记作为通过从后表面进行配准并使用精细对准标记作为参考来处理衬底的背面。

15. 发明授权

US07923344B2 Method of fabricating backside illuminated image sensor 有权
标题翻译：制造背面照明图像传感器的方法
公开(公告)号：US07923344B2
公开(公告)日：2011-04-12
申请号：US12634080
申请日：2009-12-09
申请人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
发明人： Shih-Chi Fu , Gwo-Yuh Shiau , Liang-Lung Yao , Yuan-Chih Hsieh , Feng-Jia Shiu
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14621 , H01L27/14627 , Y10S438/977
摘要： A method for fabricating a backside illuminated image sensor is provided. An exemplary method can include providing a substrate with a front surface and a back surface; forming a first alignment mark for global alignment on the front surface of the substrate; forming a second alignment mark for fine alignment in a clear-out region on the front surface of the substrate; aligning the substrate from the back surface using the first alignment mark; and removing a portion of the back surface of the substrate at the clear-out region for locating the second alignment mark.
摘要翻译：提供了制造背面照明图像传感器的方法。示例性方法可以包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成用于全局对准的第一对准标记; 形成用于在所述基板的前表面上的透明区域中精细对准的第二对准标记; 使用第一对准标记从背面对准基板; 以及在所述清除区域处去除所述基板的背面的一部分以定位所述第二对准标记。

16. 发明授权

US06645851B1 Method of forming planarized coatings on contact hole patterns of various duty ratios 有权
标题翻译：在各种占空比的接触孔图案上形成平面化涂层的方法
公开(公告)号：US06645851B1
公开(公告)日：2003-11-11
申请号：US10245429
申请日：2002-09-17
申请人： Chia-Tung Ho , Feng-Jia Shih , Jieh-Jang Chen , Ching-Sen Kuo , Shih-Chi Fu , Gwo-Yuh Shiau , Chia-Shiung Tsia
发明人： Chia-Tung Ho , Feng-Jia Shih , Jieh-Jang Chen , Ching-Sen Kuo , Shih-Chi Fu , Gwo-Yuh Shiau , Chia-Shiung Tsia
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , G03F7/0035 , G03F7/09 , G03F7/16 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： A method of forming a planarized photoresist coating on a substrate having holes with different duty ratios is described. A first photoresist preferably comprised of a Novolac resin and a diazonaphthoquinone photoactive compound is coated on a substrate and baked at or slightly above its Tg so that it reflows and fills the holes. The photoresist is exposed without a mask at a dose that allows the developer to thin the photoresist to a recessed depth within the holes. After the photoresist is hardened with a 250° C. bake, a second photoresist is coated on the substrate to form a planarized film with a thickness variation of less than 50 Angstroms between low and high duty ratio hole regions. One application is where the second photoresist is used to form a trench pattern in a via first dual damascene method. Secondly, the method is useful in fabricating MIM capacitors.
摘要翻译：描述了在具有不同占空比的孔的基板上形成平坦化光致抗蚀剂涂层的方法。优选将包含酚醛清漆树脂和重氮萘醌光敏化合物的第一光致抗蚀剂涂覆在基材上并在其Tg以上或略高于其Tg的温度下使其回流并填充孔。以允许显影剂将光致抗蚀剂减薄到孔内的凹陷深度的剂量，光刻胶不用掩模曝光。在250℃烘烤后光致抗蚀剂硬化后，在基板上涂覆第二光致抗蚀剂，以形成厚度变化小于50埃的低和高占空比孔区域的平坦化膜。一种应用是第二光致抗蚀剂用于以通孔第一双镶嵌方法形成沟槽图案。其次，该方法在制造MIM电容器方面是有用的。

17. 发明授权

US06803291B1 Method to preserve alignment mark optical integrity 有权
标题翻译：保持对准标记光学完整性的方法
公开(公告)号：US06803291B1
公开(公告)日：2004-10-12
申请号：US10394089
申请日：2003-03-20
申请人： Shih-Chi Fu , Feng-Jia Shih , Chia-Tung Ho , Chih-Ta Wu , Ching-Sen Kuo , Jieh-Jang Chen , Gwo-Yuh Shiau , Chia-Shiung Tsia
发明人： Shih-Chi Fu , Feng-Jia Shih , Chia-Tung Ho , Chih-Ta Wu , Ching-Sen Kuo , Jieh-Jang Chen , Gwo-Yuh Shiau , Chia-Shiung Tsia
IPC分类号： H01L2176
CPC分类号： H01L21/76229 , H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for protecting an alignment mark area during a CMP process including forming at least a first material layer over a process surface of a semiconductor wafer including active areas and alignment mark trenches formed in the at least one alignment mark area; forming at least a second material layer over the first material layer including the active areas and the at least one alignment mark area; lithographically patterning and etching the at least a second material layer to form at least a plurality lines of the at least a second material layer adjacent to the alignment mark trenches; and, carrying out a CMP process to remove at least a portion of the at least a second material layer.
摘要翻译：一种用于在CMP工艺期间保护对准标记区域的方法，包括在半导体晶片的工艺表面上形成至少第一材料层，所述半导体晶片包括形成在所述至少一个对准标记区域中的有源区和对准标记沟槽; 在包括所述有源区域和所述至少一个对准标记区域的所述第一材料层上形成至少第二材料层; 对所述至少第二材料层进行光刻图案化和蚀刻，以形成与所述对准标记沟槽相邻的所述至少第二材料层的至少多条线; 以及执行CMP处理以去除所述至少第二材料层的至少一部分。

18. 发明授权

US07586145B2 EEPROM flash memory device with jagged edge floating gate 有权
标题翻译：具有锯齿状边缘浮动栅极的EEPROM闪存器件
公开(公告)号：US07586145B2
公开(公告)日：2009-09-08
申请号：US11191437
申请日：2005-07-27
申请人： Yuan-Hung Liu , Shih-Chi Fu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Shih-Chi Fu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521 , H01L29/7881
摘要： An EEPROM flash memory device having a floating gate electrode enabling a reduced erase voltage and method for forming the same, the floating gate electrode including an outer edge portion including multiple charge transfer pointed tips.
摘要翻译：一种具有能够减小擦除电压的浮动栅电极的EEPROM闪速存储器件及其形成方法，该浮栅电极包括包括多个电荷转移尖端的外边缘部分。

19. 发明申请

US20060170029A1 Novel process for erase improvement in a non-volatile memory device 有权
标题翻译：用于擦除非易失性存储器件中的擦除的新方法
公开(公告)号：US20060170029A1
公开(公告)日：2006-08-03
申请号：US11045850
申请日：2005-01-28
申请人： Shih-Chang Liu , Chi-Hsin Lo , Shih-Chi Fu , Chia-Ta Hsieh , Wen-Ting Chu , Chia-Shiung Tsai
发明人： Shih-Chang Liu , Chi-Hsin Lo , Shih-Chi Fu , Chia-Ta Hsieh , Wen-Ting Chu , Chia-Shiung Tsai
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115
摘要： A method of making embedded non-volatile memory devices includes forming a first mask layer overlying a polycrystalline silicon layer in a cell region and a peripheral region on a semiconductor substrate wherein the first mask layer has a plurality of openings in the cell region. Portions of the polycrystalline silicon layer exposed in the plurality of openings can be oxidized to form a plurality of poly-oxide regions, and the first mask layer can then be removed. The polycrystalline silicon layer not covered by the plurality of poly-oxide regions can be etched to form a plurality of floating gates, wherein etching the polycrystalline silicon layer is accompanied by a sputtering. A dielectric layer can then be formed, as well as a second mask layer in both the cell region and the peripheral region. The second mask layer in the cell region is partially etched back after a photoresist layer is formed over the second mask layer in the peripheral region. The dielectric layer is partially etched to form multiple thicknesses of the dielectric layer. The second mask layer is removed and a plurality of control gates are formed partially overlying the plurality of floating gates in the cell region.
摘要翻译：一种制造嵌入式非易失性存储器件的方法包括形成覆盖单元区域中的多晶硅层的第一掩模层和半导体衬底上的外围区域，其中第一掩模层在单元区域中具有多个开口。在多个开口中暴露的多晶硅层的一部分可以被氧化以形成多个多晶氧化物区域，然后可以去除第一掩模层。可以蚀刻不被多个多晶氧化物区域覆盖的多晶硅层以形成多个浮栅，其中蚀刻多晶硅层伴随着溅射。然后可以形成电介质层，以及在电池区域和周边区域中形成第二掩模层。在周边区域中的第二掩模层上形成光致抗蚀剂层之后，单元区域中的第二掩模层被部分地回蚀。电介质层被部分蚀刻以形成介电层的多个厚度。去除第二掩模层，并且多个控制栅极部分地覆盖在单元区域中的多个浮动栅极上。

20. 发明申请

US20080087921A1 Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same 有权
标题翻译：适用于逻辑嵌入式CIS芯片的图像传感器装置及其制造方法
公开(公告)号：US20080087921A1
公开(公告)日：2008-04-17
申请号：US11542064
申请日：2006-10-03
申请人： Chung-Yi Yu , Chia-Shiung Tsai , Shih-Chi Fu
发明人： Chung-Yi Yu , Chia-Shiung Tsai , Shih-Chi Fu
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.
摘要翻译：提供图像传感器装置。衬底在其中和/或其上形成有光电传感器区域。在衬底上形成互连结构，并且包括在金属间电介质（IMD）层中形成的金属线。在光电传感器区域中的至少一个IMD层中形成至少一个IMD级微透镜。优选地，阻挡层位于IMD层之间。优选地，除了在IMD级微透镜所在的位置之外，每个级别的每个阻挡层的净厚度在光电传感器区域之外的位置处具有限制在100埃或更小的净厚度。 IMD级微透镜和蚀刻停止层优选具有大于IMD层的折射率的折射率。优选在金属线上形成覆盖层，特别是当金属线包括铜时。上级微透镜可以位于互连结构之上的层上。

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