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11. 发明申请

US20190288078A1 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190288078A1
公开(公告)日：2019-09-19
申请号：US16430444
申请日：2019-06-04
申请人： FUJI ELECTRIC CO., LTD.
发明人： Hiroki WAKIMOTO , Hiroshi TAKISHITA , Takashi YOSHIMURA , Takahiro TAMURA , Yuichi ONOZAWA
IPC分类号： H01L29/36 , H01L29/739 , H01L29/66 , H01L29/06 , H01L29/861 , H01L29/32 , H01L21/324 , H01L21/22 , H01L21/265
摘要： A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an n-type field stop region formed in the semiconductor substrate on its rear surface side with protons as a donor; and an n-type cathode region formed in the semiconductor substrate to be closer to its rear surface than the field stop region is, wherein a concentration distribution of the donor in the field stop region in its depth direction has a first peak, and a second peak that is closer to the rear surface of the semiconductor substrate than the first peak is, and has a concentration lower than that of the first peak, and a carrier lifetime in at least a partial region between the anode region and the cathode region is longer than carrier lifetimes in the anode region.

12. 发明申请

US20160276446A1 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20160276446A1
公开(公告)日：2016-09-22
申请号：US15169740
申请日：2016-06-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Hiroki WAKIMOTO , Hiroshi TAKISHITA , Takashi YOSHIMURA , Takahiro TAMURA , Yuichi ONOZAWA
IPC分类号： H01L29/36 , H01L21/265 , H01L21/324 , H01L29/06 , H01L29/861 , H01L29/739 , H01L27/06 , H01L21/22 , H01L29/66
CPC分类号： H01L29/36 , H01L21/221 , H01L21/265 , H01L21/26506 , H01L21/324 , H01L27/0664 , H01L29/0619 , H01L29/0638 , H01L29/32 , H01L29/6609 , H01L29/66128 , H01L29/66348 , H01L29/7397 , H01L29/861 , H01L29/8611
摘要： A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an n-type field stop region formed in the semiconductor substrate on its rear surface side with protons as a donor; and an n-type cathode region formed in the semiconductor substrate to be closer to its rear surface than the field stop region is, wherein a concentration distribution of the donor in the field stop region in its depth direction has a first peak, and a second peak that is closer to the rear surface of the semiconductor substrate than the first peak is, and has a concentration lower than that of the first peak, and a carrier lifetime in at least a partial region between the anode region and the cathode region is longer than carrier lifetimes in the anode region.
摘要翻译：半导体器件包括：n型半导体衬底; 形成在其表面侧的半导体衬底中的p型阳极区域; 形成在其后表面侧的半导体衬底中的质子作为供体的n型场阻挡区域; 并且形成在所述半导体衬底中比所述场停止区更靠近其后表面的n型阴极区域，其中所述场停止区域中的供体在其深度方向上的浓度分布具有第一峰值，并且第二比第一峰更靠近半导体衬底的后表面的峰，并且具有低于第一峰的浓度，并且在阳极区域和阴极区域之间的至少部分区域中的载流子寿命更长比载体寿命在阳极区域。

13. 发明申请

US20150064852A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150064852A1
公开(公告)日：2015-03-05
申请号：US14537279
申请日：2014-11-10
申请人： FUJI ELECTRIC CO., LTD.
发明人： Hiroki WAKIMOTO
IPC分类号： H01L29/66 , H01L21/322 , H01L21/02 , H01L29/06
CPC分类号： H01L29/66333 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/3221 , H01L29/0619 , H01L29/0646 , H01L29/404 , H01L29/7395 , H01L29/78
摘要： In a method for manufacturing a reverse blocking MOS semiconductor device, a gettering polysilicon layer is formed on a rear surface of an FZ silicon substrate. Then, a p+ isolation layer for obtaining a reverse voltage blocking capability is formed. A front surface structure including a MOS gate structure is formed on a front surface of the FZ silicon substrate. The rear surface of the FZ silicon substrate is ground to reduce the thickness of the FZ silicon substrate. The gettering polysilicon layer is formed with such a thickness that it remains, without being vanished by single crystallization, until a process for forming the front surface structure including the MOS gate structure ends. Therefore, it is possible to sufficiently maintain the gettering function of the gettering polysilicon layer even in a heat treatment process subsequent to an isolation diffusion process.
摘要翻译：在制造反向阻挡MOS半导体器件的方法中，在FZ硅衬底的后表面上形成吸杂多晶硅层。然后，形成用于获得反向电压阻断能力的p +隔离层。在FZ硅衬底的前表面上形成包括MOS栅极结构的前表面结构。研磨FZ硅衬底的后表面以减小FZ硅衬底的厚度。吸气多晶硅层形成的厚度保持不变，直到用于形成包括MOS栅极结构的前表面结构的工艺结束为止，通过单一结晶消失。因此，即使在隔离扩散处理之后的热处理工序中，也可以充分地保持吸杂多晶硅层的吸杂功能。

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