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    • 13. 发明授权
    • Radiation-tolerant imaging device
    • 辐射耐受成像装置
    • US5576561A
    • 1996-11-19
    • US291085
    • 1994-08-18
    • Nicholas J. ColellaJoseph R. Kimbrough
    • Nicholas J. ColellaJoseph R. Kimbrough
    • H01L27/148H01L29/768
    • H01L27/14831
    • A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.
    • 用于整个晶片的均匀深度的屏障用于产生对由电离辐射通过产生的噪声脉冲不太敏感的成像装置。 屏障防止在CCD检测器或半导体逻辑或存储器件的体硅中产生的电荷进入成像装置中每个像素的收集体积。 电荷屏障是物理屏障,势垒或两者的组合。 物理屏障由SiO2绝缘体形成。 通过增加多数载流子(空穴)的浓度与电离辐射产生的电子结合而形成势垒。 CCD成像设备的制造商可以通过将从标准晶片馈送到其工艺流中的晶片类型改变为在其表面之下具有屏障的晶片类型来产生耐辐射器件,从而为其生产成本引入非常小的附加成本。 有效的屏障类型是SiO 2层。