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    • 11. 发明授权
    • Electrical contact probe for sampling high frequency electrical signals
    • 用于采样高频电信号的电接触探头
    • US5847569A
    • 1998-12-08
    • US694925
    • 1996-08-08
    • Francis HoDavid M. Bloom
    • Francis HoDavid M. Bloom
    • G01R1/067G01R19/25G01R31/28
    • G01R1/06772G01R19/2509Y10S977/852
    • An all-electrical high frequency contact sampling probe provides sub-micron spatial resolution and picosecond or sub-picosecond temporal resolution. In a preferred embodiment, the probe is a monolithic integration of a sampling circuit with a cantilever and probe tip, where the distance between the circuit and the tip is less than a wavelength of interest in an RF signal �V.sub.RF !. The sampling circuit �44! uses Schottky diodes �SD! for sampling the RF signal �V.sub.RF ! from a device under test at a rate determined by local oscillator signals �50, 52!. An IF signal �V.sub.IF ! produced by the sampling probe is an equivalent time representation of the RF signal. Applications include testing signals at interior nodes of high speed integrated circuits.
    • 全电高频接点采样探头提供亚微米空间分辨率和皮秒或次皮秒时间分辨率。 在优选实施例中,探针是采样电路与悬臂和探针尖端的单片整合,其中电路和尖端之间的距离小于RF信号[VRF]中感兴趣的波长。 采样电路[44]使用肖特基二极管[SD]以本地振荡器信号[50,52]确定的速率从被测器件采样RF信号[VRF]。 由采样探针产生的IF信号[VIF]是RF信号的等效时间表示。 应用包括在高速集成电路的内部节点的测试信号。
    • 14. 发明授权
    • Method of making released micromachined structures by directional etching
    • 通过定向蚀刻制造释放的微加工结构的方法
    • US6086774A
    • 2000-07-11
    • US993924
    • 1997-12-18
    • Francis HoYoshihisa Yamamoto
    • Francis HoYoshihisa Yamamoto
    • B81C1/00C25F3/02G01P15/08G01P15/09G01P15/12G01Q70/16B44C1/22C25F3/12G01P15/02
    • G01Q70/16B81C1/00531B82Y35/00G01P15/0802G01P15/0922G01P15/123B81B2201/0235B81B2203/0118B81C2201/0132B81C2201/0143G01P2015/0828
    • A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.
    • 通过使用至少两个方向蚀刻步骤来制造释放结构的方法。 悬臂,桥梁和许多其他结构可以用本发明制成。 在优选实施例中,以相对于基板表面非正常的角度执行两个定向蚀刻步骤,使得基底被切削并且结构被释放。 或者,可以以各种角度执行多于两个的定向蚀刻步骤。 例如,可以在定向蚀刻工艺期间连续旋转衬底。 通过本发明的方法形成的悬臂必须具有基本上三角形的横截面。 可以使用的定向蚀刻工艺包括聚焦离子束蚀刻和ECR等离子体蚀刻。 一些定向蚀刻工艺可能需要使用图案化的抗蚀剂层。 诸如聚焦离子束蚀刻的其它蚀刻工艺可以使用扫描技术来选择蚀刻哪些区域。 可以执行背面蚀刻以在释放的微加工结构下去除剩余的基底材料。 该方法特别适用于制备释放的悬臂。