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11. 发明授权

US08372757B2 Wet etching methods for copper removal and planarization in semiconductor processing 失效
公开(公告)号：US08372757B2
公开(公告)日：2013-02-12
申请号：US12535594
申请日：2009-08-04
申请人： Steven T. Mayer , Eric Webb , David W. Porter
发明人： Steven T. Mayer , Eric Webb , David W. Porter
IPC分类号： H01L21/302
CPC分类号： C23F1/18 , C23F1/02 , C23F1/34 , C23F3/04 , C25D5/48 , C25D7/123 , C25D17/001 , H01L21/02074 , H01L21/288 , H01L21/32115 , H01L21/32134 , H01L21/67051 , H01L21/6708 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L21/76898 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.

12. 发明申请

US20110223772A1 FABRICATION OF SEMICONDUCTOR INTERCONNECT STRUCTURE 有权
标题翻译：半导体互连结构的制造
公开(公告)号：US20110223772A1
公开(公告)日：2011-09-15
申请号：US13116963
申请日：2011-05-26
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： H01L21/306
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.
摘要翻译：描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。氧化和蚀刻可能发生在相同的溶液中。在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。合适的直接金属蚀刻剂包括任何数量的酸性溶液。该方法允许减少点蚀的受控氧化和/或蚀刻。在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

13. 发明授权

US07972970B2 Fabrication of semiconductor interconnect structure 有权
标题翻译：半导体互连结构的制造
公开(公告)号：US07972970B2
公开(公告)日：2011-07-05
申请号：US11888312
申请日：2007-07-30
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： H01L21/302
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.
摘要翻译：描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。氧化和蚀刻可能发生在相同的溶液中。在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。合适的直接金属蚀刻剂包括任何数量的酸性溶液。该方法允许减少点蚀的受控氧化和/或蚀刻。在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

14. 发明申请

US20100015805A1 Wet Etching Methods for Copper Removal and Planarization in Semiconductor Processing 失效
标题翻译：半导体加工中铜去除和平面化的湿蚀刻方法
公开(公告)号：US20100015805A1
公开(公告)日：2010-01-21
申请号：US12535594
申请日：2009-08-04
申请人： Steven T. Mayer , Eric Webb , David W. Porter
发明人： Steven T. Mayer , Eric Webb , David W. Porter
IPC分类号： H01L21/304 , H01L21/306
CPC分类号： C23F1/18 , C23F1/02 , C23F1/34 , C23F3/04 , C25D5/48 , C25D7/123 , C25D17/001 , H01L21/02074 , H01L21/288 , H01L21/32115 , H01L21/32134 , H01L21/67051 , H01L21/6708 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L21/76898 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer. In some embodiments, the etching solutions further include pH adjustors, such as sulfuric acid, aminoacids, and carboxylic acids.
摘要翻译：可以通过湿式蚀刻溶液蚀刻半导体衬底上的暴露的铜区域，所述湿蚀刻溶液包含（i）一种或多种选自二齿，三齿和四齿络合剂的络合剂; 和（ii）pH在约5和12之间的氧化剂。在许多实施方案中，蚀刻基本上是各向同性的，并且在铜的表面上没有可见的不可见物质形成。该蚀刻在半导体制造中的许多工艺中是有用的，包括部分或全部去除铜覆盖层，用于铜表面的平坦化，以及用于在铜填充的镶嵌特征中形成凹陷。合适的蚀刻溶液的实例包括分别作为二齿和三齿络合剂的二胺（例如乙二胺）和/或三胺（例如二亚乙基三胺）和作为氧化剂的过氧化氢的溶液。在一些实施方案中，蚀刻溶液还包括pH调节剂，例如硫酸，氨基酸和羧酸。

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