专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06908825B2 Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop 失效
标题翻译：制造集成电路电感器的方法，其中在感应环下形成多个孔
公开(公告)号：US06908825B2
公开(公告)日：2005-06-21
申请号：US10298418
申请日：2002-11-14
申请人： Shuming Xu , Hanhua Feng , Pang Dow Foo , Bai Xu , Uppili Sridhar
发明人： Shuming Xu , Hanhua Feng , Pang Dow Foo , Bai Xu , Uppili Sridhar
IPC分类号： H01F17/00 , H01L21/02 , H01L27/08 , H01L21/764
CPC分类号： H01L28/10 , H01F17/0006 , H01L27/08
摘要： The invention relates to a method of making an integrated circuit inductor that comprises a silicon substrate and an oxide layer on the silicon substrate. In one aspect, the method comprises depositing an inductive loop on the oxide layer, and making a plurality of apertures in the oxide layer beneath the inductive loop. The method also comprises providing a plurality of bridges adjacent the apertures and provided by portions of the oxide layer between an inner region within the inductive loop and an outer region of the oxide layer without the inductive loop, the inductive loop being supported on the bridges. The method comprises forming a trench in the silicon substrate beneath the bridges, to provide an air gap between the inductive loop and the silicon substrate.
摘要翻译：本发明涉及一种制造集成电路电感器的方法，该集成电路电感器包括硅衬底和硅衬底上的氧化物层。在一个方面，该方法包括在氧化物层上沉积感应回路，以及在感应回路下面的氧化物层中形成多个孔。该方法还包括提供邻近孔的多个桥，并且由感应环内的内部区域和氧化物层的外部区域之间的氧化物层的部分提供，而没有感应环路，感应环路被支撑在桥上。该方法包括在桥下方的硅衬底中形成沟槽，以在感应环路和硅衬底之间提供气隙。

12. 发明授权

US06667516B2 RF LDMOS on partial SOI substrate 失效
公开(公告)号：US06667516B2
公开(公告)日：2003-12-23
申请号：US10186528
申请日：2002-07-01
申请人： Shuming Xu , Hanhua Feng , Pang-Dow Foo
发明人： Shuming Xu , Hanhua Feng , Pang-Dow Foo
IPC分类号： H01L2994
CPC分类号： H01L29/66659 , H01L29/0653 , H01L29/4175 , H01L29/41766 , H01L29/66636 , H01L29/7835 , Y10S438/923
摘要： In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor power handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

13. 发明授权

US06495903B2 Integrated circuit inductor 失效
标题翻译：集成电路电感
公开(公告)号：US06495903B2
公开(公告)日：2002-12-17
申请号：US09737439
申请日：2000-12-13
申请人： Shuming Xu , Hanhua Feng , Pang Dow Foo , Bai Xu , Uppili Sridhar
发明人： Shuming Xu , Hanhua Feng , Pang Dow Foo , Bai Xu , Uppili Sridhar
IPC分类号： H01L2900
CPC分类号： H01L28/10 , H01F17/0006 , H01L27/08
摘要： An inductor has a spiral aluminum track deposited on an oxide layer over a silicon substrate. The substrate is etched away to form a trench, which extends around beneath the track and provides an air gap having a low dielectric constant. The oxide layer has an inner region within the track, an outer region outside the track and a bridging region extending between the other regions. The bridging region is comprised of intact bridges and gaps therebetween, which are open to the trench and through which an etchant has access to the silicon substrate to form the trench by etching.
摘要翻译：电感器具有沉积在硅衬底上的氧化物层上的螺旋状铝轨道。将衬底蚀刻掉以形成沟槽，该沟槽在轨道下方延伸并提供具有低介电常数的气隙。氧化物层具有轨道内的内部区域，轨道外部的外部区域和在其它区域之间延伸的桥接区域。桥接区域由完整的桥和它们之间的间隙组成，它们对沟槽开放，蚀刻剂可以通过该沟槽进入硅衬底以通过蚀刻形成沟槽。

14. 发明授权

US06461902B1 RF LDMOS on partial SOI substrate 失效
标题翻译： RF LDMOS在部分SOI衬底上
公开(公告)号：US06461902B1
公开(公告)日：2002-10-08
申请号：US09618263
申请日：2000-07-18
申请人： Shuming Xu , Hanhua Feng , Pang-Dow Foo
发明人： Shuming Xu , Hanhua Feng , Pang-Dow Foo
IPC分类号： H01L2100
CPC分类号： H01L29/66659 , H01L29/0653 , H01L29/4175 , H01L29/41766 , H01L29/66636 , H01L29/7835 , Y10S438/923
摘要： In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.
摘要翻译：在现有技术中，能够处理高功率的LDMOSFET器件已经通过将源极接触定位在器件的底表面上，通过连接到源极区域通过沉降片而实现良好的散热。然而，该结构具有差的高频特性。同样在现有技术中，通过在源极/漏极区域（SOI）之下引入介电层已经实现了良好的高频性能，但是该结构具有差的处理能力。本发明在同一设备中实现了良好的高频行为以及良好的功率能力。代替在器件的整个横截面上插入电介质层，电介质层被限制在漏极的重掺杂部分之下，在轻掺杂部分中具有少量的重叠。详细描述该结构及其制造方法。

15. 发明授权

US07132307B2 High performance silicon condenser microphone with perforated single crystal silicon backplate 失效
公开(公告)号：US07132307B2
公开(公告)日：2006-11-07
申请号：US10736377
申请日：2003-12-15
申请人： Zhe Wang , Qingxin Zhang , Hanhua Feng
发明人： Zhe Wang , Qingxin Zhang , Hanhua Feng
IPC分类号： H01L21/00 , H04R25/00
CPC分类号： H04R19/005 , Y10T29/49005
摘要： A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

16. 发明授权

US06855640B2 Apparatus and process for bulk wet etch with leakage protection 失效
公开(公告)号：US06855640B2
公开(公告)日：2005-02-15
申请号：US10083990
申请日：2002-02-26
申请人： Zhe Wang , Qingxin Zhang , Pang Dow Foo , Hanhua Feng
发明人： Zhe Wang , Qingxin Zhang , Pang Dow Foo , Hanhua Feng
IPC分类号： H01L21/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/67086 , H01L21/30608 , H01L21/6708
摘要： When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.

17. 发明授权

US09264506B2 Pull data transfer method in request-response models 有权
标题翻译：在请求响应模型中拉数据传输方法
公开(公告)号：US09264506B2
公开(公告)日：2016-02-16
申请号：US13469423
申请日：2012-05-11
申请人： Hanhua Feng , Anton Viktorovich Riabov
发明人： Hanhua Feng , Anton Viktorovich Riabov
IPC分类号： H04L29/08 , H04L12/733 , H04L12/703
CPC分类号： H04L67/26 , H04L45/20 , H04L45/28 , H04L67/325
摘要： Systems, methods, and products for pull data transfer in a request-response model are provided herein. One aspect provides for generating output data utilizing at least one data generation station; and communicating via the at least one data generation station output data related to at least one data request received from at least one data requesting station responsive to at least one criterion, the at least one criterion comprising one of expiration of a time period or generation of a threshold amount of output data. Other embodiments and aspects are also described herein.
摘要翻译：本文提供了在请求 - 响应模型中拉数据传输的系统，方法和产品。一方面提供了利用至少一个数据生成站产生输出数据的方法; 以及响应于至少一个标准，经由所述至少一个数据生成站输出与从至少一个数据请求站接收的至少一个数据请求相关的数据，所述至少一个标准包括一个时间段的到期或生成输出数据的阈值量。本文还描述了其它实施例和方面。

18. 发明申请

US20130324863A1 GUIDE WIRE ARRANGEMENT, STRIP ARRANGEMENT AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：指导布置，条纹布置及其形成方法
公开(公告)号：US20130324863A1
公开(公告)日：2013-12-05
申请号：US13883274
申请日：2011-11-02
申请人： Daquan Yu , Woo Tae Park , Li Shiah Lim , Muhammad Hamidullah , Rama Krishna Kotlanka , Vaidyanathan Kripesh , Hanhua Feng
发明人： Daquan Yu , Woo Tae Park , Li Shiah Lim , Muhammad Hamidullah , Rama Krishna Kotlanka , Vaidyanathan Kripesh , Hanhua Feng
IPC分类号： A61B5/0215
CPC分类号： A61B5/02158 , A61M25/09 , A61M2025/09108 , A61M2025/09175 , Y10T29/49169
摘要： A guide wire arrangement, a strip arrangement, a method of forming a guide wire arrangement, and a method of forming a strip arrangement are provided. The guide wire arrangement includes a strip; a sensor being disposed on a first portion of the strip; a chip being disposed next to the sensor on a second portion of the strip, wherein the second portion of the strip is next to the first portion of the strip; wherein the strip is folded at a folding point between the first portion of the strip and the second portion of the strip such that the first portion of the strip and the second portion of the strip form a stack of strip portions.
摘要翻译：提供导丝布置，条带布置，形成导丝布置的方法以及形成条布置的方法。导丝布置包括条带; 传感器设置在所述带的第一部分上; 在所述条带的第二部分上邻近所述传感器布置的芯片，其中所述条带的第二部分紧邻所述条带的第一部分; 其中所述条带在所述条带的第一部分和所述条带的第二部分之间的折叠点处折叠，使得所述条带的第一部分和所述带的第二部分形成条带部分的堆叠。

19. 发明授权

US07924718B2 Distributed joint admission control and dynamic resource allocation in stream processing networks 失效
标题翻译：流处理网络中的分布式联合准入控制和动态资源分配
公开(公告)号：US07924718B2
公开(公告)日：2011-04-12
申请号：US12535805
申请日：2009-08-05
申请人： Hanhua Feng , Zhen Liu , Honghui Xia , Li Zhang
发明人： Hanhua Feng , Zhen Liu , Honghui Xia , Li Zhang
IPC分类号： G01R31/08
CPC分类号： G06F9/5066 , G06F9/5038
摘要： Methods and apparatus operating in a stream processing network perform load shedding and dynamic resource allocation so as to meet a pre-determined utility criterion. Load shedding is envisioned as an admission control problem encompassing source nodes admitting workflows into the stream processing network. A primal-dual approach is used to decompose the admission control and resource allocation problems. The admission control operates as a push-and-pull process with sources pushing workflows into the stream processing network and sinks pulling processed workflows from the network. A virtual queue is maintained at each node to account for both queue backlogs and credits from sinks. Nodes of the stream processing network maintain shadow prices for each of the workflows and share congestion information with neighbor nodes. At each node, resources are devoted to the workflow with the maximum product of downstream pressure and processing rate, where the downstream pressure is defined as the backlog difference between neighbor nodes. The primal-dual controller iteratively adjusts the admission rates and resource allocation using local congestion feedback. The iterative controlling procedure further uses an interior-point method to improve the speed of convergence towards optimal admission and allocation decisions.
摘要翻译：在流处理网络中操作的方法和装置执行卸载和动态资源分配，以满足预定的效用标准。负载脱落被设想为包括允许流程处理网络中的工作流的源节点的准入控制问题。使用原始双重方法来分解入学控制和资源分配问题。准入控制作为推拉过程进行操作，其中源将工作流推送到流处理网络并且从网络中吸收经处理的工作流。每个节点都维护一个虚拟队列，以解决队列积压和来自宿的积分。流处理网络的节点维护每个工作流的影子价格，并与邻居节点共享拥塞信息。在每个节点，资源用于工作流程，具有下游压力和处理速率的最大乘积，其中下游压力被定义为相邻节点之间的积压差异。原始双控制器使用局部拥塞反馈迭代地调整入局速率和资源分配。迭代控制程序进一步使用内点方法来提高收敛速度以达到最佳准入和分配决策。

20. 发明申请

US20090300183A1 Distributed Joint Admission Control and Dynamic Resource Allocation in Stream Processing Networks 失效
标题翻译：流处理网络中的分布式联合接纳控制和动态资源分配
公开(公告)号：US20090300183A1
公开(公告)日：2009-12-03
申请号：US12535805
申请日：2009-08-05
申请人： Hanhua Feng , Zhen Liu , Honghui Xia , Li Zhang
发明人： Hanhua Feng , Zhen Liu , Honghui Xia , Li Zhang
IPC分类号： G06F15/173 , G06F15/16
CPC分类号： G06F9/5066 , G06F9/5038
摘要： Methods and apparatus operating in a stream processing network perform load shedding and dynamic resource allocation so as to meet a pre-determined utility criterion. Load shedding is envisioned as an admission control problem encompassing source nodes admitting workflows into the stream processing network. A primal-dual approach is used to decompose the admission control and resource allocation problems. The admission control operates as a push-and-pull process with sources pushing workflows into the stream processing network and sinks pulling processed workflows from the network. A virtual queue is maintained at each node to account for both queue backlogs and credits from sinks. Nodes of the stream processing network maintain shadow prices for each of the workflows and share congestion information with neighbor nodes. At each node, resources are devoted to the workflow with the maximum product of downstream pressure and processing rate, where the downstream pressure is defined as the backlog difference between neighbor nodes. The primal-dual controller iteratively adjusts the admission rates and resource allocation using local congestion feedback. The iterative controlling procedure further uses an interior-point method to improve the speed of convergence towards optimal admission and allocation decisions.
摘要翻译：在流处理网络中操作的方法和装置执行卸载和动态资源分配，以满足预定的效用标准。负载脱落被设想为包括允许流程处理网络中的工作流的源节点的准入控制问题。使用原始双重方法来分解入学控制和资源分配问题。准入控制作为推拉过程进行操作，其中源将工作流推送到流处理网络并且从网络中吸收经处理的工作流。每个节点都维护一个虚拟队列，以解决队列积压和来自宿的积分。流处理网络的节点维护每个工作流的影子价格，并与邻居节点共享拥塞信息。在每个节点，资源用于工作流程，具有下游压力和处理速率的最大乘积，其中下游压力被定义为相邻节点之间的积压差异。原始双控制器使用局部拥塞反馈迭代地调整入局速率和资源分配。迭代控制程序进一步使用内点方法来提高收敛速度以达到最佳准入和分配决策。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式