专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08328943B2 Film forming apparatus and method 有权
标题翻译：成膜装置及方法
公开(公告)号：US08328943B2
公开(公告)日：2012-12-11
申请号：US12521176
申请日：2007-11-29
申请人： Eisuke Morisaki , Hirokatsu Kobayashi , Masayuki Harashima
发明人： Eisuke Morisaki , Hirokatsu Kobayashi , Masayuki Harashima
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/46 , H01L21/02529 , H01L21/0262 , H01L21/67115 , H01L29/66068
摘要： A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.
摘要翻译：成膜装置包括：处理室，在该处理室内保持有真空空间，供给成膜气体;基板支撑单元，设置在处理室内部并支撑基板;加热器，由化合物包含高熔点金属和碳的材料设置在处理室内部，并加热基板。

12. 发明申请

US20120128892A1 SURFACE PROCESSING METHOD AND SURFACE PROCESSING APPARATUS 审中-公开
标题翻译：表面处理方法和表面处理装置
公开(公告)号：US20120128892A1
公开(公告)日：2012-05-24
申请号：US13114096
申请日：2011-05-24
申请人： Noriaki TOYODA , Isao Yamada , Masaki Narushima , Masayuki Harashima , Eisuke Morisaki
发明人： Noriaki TOYODA , Isao Yamada , Masaki Narushima , Masayuki Harashima , Eisuke Morisaki
IPC分类号： C23C16/02 , C23C16/34
CPC分类号： H01L21/02024 , C30B33/00 , H01L29/1608
摘要： A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.
摘要翻译：所公开的表面处理方法包括：第一处理步骤，其中从不含氮的源材料产生气体束束并照射到待处理的构件;以及第二处理步骤，其中氮气簇束为产生并照射到待处理的构件。

13. 发明申请

US20140174364A1 HEAT TREATMENT DEVICE 审中-公开
标题翻译：热处理装置
公开(公告)号：US20140174364A1
公开(公告)日：2014-06-26
申请号：US14236955
申请日：2012-07-23
申请人： Ken Nakao , Eisuke Morisaki
发明人： Ken Nakao , Eisuke Morisaki
IPC分类号： C23C16/46
CPC分类号： C23C16/46 , C23C16/4588 , H01L21/67109 , H01L21/67115
摘要： A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element.
摘要翻译：热处理装置包括：容纳要进行热处理的多个基板的处理容器; 保持所述多个基板的基板保持部件; 感应加热线圈，其在处理容器内部形成感应磁场; 向感应加热线圈施加高频电力的高频电源; 气体供给机构，其向处理容器的内部供给处理气体; 排出处理容器内部的排气机构; 以及感应加热元件，其设置在所述感应加热线圈和所述基板保持部件之间，以将所述基板保持部件包围在所述处理容器内。感应加热元件由感应磁场形成的感应电流加热，并且基板被来自感应加热元件的辐射热加热。感应电流流向基板被感应加热元件阻挡。

14. 发明授权

US08696814B2 Film deposition apparatus and film deposition method 有权
标题翻译：薄膜沉积装置和薄膜沉积方法
公开(公告)号：US08696814B2
公开(公告)日：2014-04-15
申请号：US12519933
申请日：2007-11-29
申请人： Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
发明人： Eisuke Morisaki , Hirokatsu Kobayashi , Jun Yoshikawa , Ikuo Sawada , Tsunenobu Kimoto , Noriaki Kawamoto , Masatoshi Aketa
IPC分类号： C23C16/52 , C23C16/455 , C23C16/46 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/481 , C23C16/325 , C23C16/46 , C30B25/10 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/0262 , H01L21/67109 , H01L21/6719 , H01L21/67748 , H01L21/68764 , H01L21/68771 , H01L29/66068
摘要： A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.
摘要翻译：所公开的膜沉积设备包括处理室，其内保持有减压空间; 气体供给部，其向所述处理室供给成膜气体; 基板保持部，其由以碳为主要成分的材料制成，并将基板保持在所述处理室中; 线圈，其布置在所述处理室的外部并感应加热所述基板保持部; 以及绝热构件，其覆盖所述基板保持部并被布置成与所述处理室分离，其中所述减压空间被分离成供给所述成膜气体的成膜气体供给空间和限定了所述隔热空间的成膜气体供给空间在所述基板保持部和所述处理室之间，并且其中向所述绝热空间供给冷却介质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式