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11. 发明授权

US06605152B2 Catch pan for melt leakage in apparatus for pulling single crystal 有权
标题翻译：捕捉锅用于拉出单晶的设备中的熔体泄漏
公开(公告)号：US06605152B2
公开(公告)日：2003-08-12
申请号：US09959593
申请日：2001-10-31
申请人： Koji Mizuishi , Tomohiko Ohta
发明人： Koji Mizuishi , Tomohiko Ohta
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/00 , C30B35/00 , Y10T117/1032 , Y10T117/1052
摘要： The present invention provides a catch pan for melt leakage provided under a crucible at a bottom portion of a chamber in a single crystal pulling apparatus based on the CZ method, wherein the catch pan for melt leakage comprises at least a bottom portion and a barrel portion, and the bottom portion and the barrel portion are connected by screw-fitting or by using a tap bolt. There is provided a catch pan for melt leakage provided in a single crystal pulling apparatus, which can, even if a melt flows out of the crucible by a certain possible cause in a CZ method single crystal pulling apparatus, prevent the melt flowed out from reaching lower mechanisms including metal parts, piping and so forth, and thereby prevent bad influences on operators and peripheral equipments.
摘要翻译：本发明提供了一种基于CZ方法的单晶拉制装置中在坩埚底部的坩埚下方设置熔融泄漏捕集盘，其中用于熔体泄漏的捕集盘至少包括底部和筒部分并且底部和筒部通过螺纹配合或使用螺栓连接。在单晶拉制装置中设置有用于熔体泄漏的捕集器，即使在CZ法单晶拉制装置中，熔融物也可以通过某种可能的原因流出坩埚，从而防止熔体流出而达到下部机构包括金属部件，管道等，从而防止对操作员和外围设备的不良影响。

12. 发明授权

US5394829A Device for pulling silicon single crystal 失效
标题翻译：拉硅单晶器件
公开(公告)号：US5394829A
公开(公告)日：1995-03-07
申请号：US35607
申请日：1993-03-23
申请人： Toshiharu Uesugi , Koji Mizuishi , Atsushi Iwasaki , Tadashi Niwayama , Tetsuhiro Oda
发明人： Toshiharu Uesugi , Koji Mizuishi , Atsushi Iwasaki , Tadashi Niwayama , Tetsuhiro Oda
IPC分类号： C30B15/00 , C30B35/00
CPC分类号： C30B15/00 , Y10T117/1032 , Y10T117/1064 , Y10T117/1068 , Y10T117/1088
摘要： A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.
摘要翻译：构造用于拉制单晶硅的装置，以防止SiO元素沉积在器件内的石墨部件上，防止石墨部件变质，延长器件连续使用的持续时间，以及简化了装置的拆卸和重新组装。该装置通过Czochralski法在惰性气体气氛中拉出硅单晶，该装置通过包括用于容纳熔融硅团2的坩埚1，设置在坩埚1的周边的加热器3，外部构件形成用于容纳坩埚1的拉动室6，设置在拉动室6的上部的惰性气体入口部15和与惰性气体出口部16分离的惰性气体出口部16，惰性气体出口部16在同一上部拉动室6。

13. 发明授权

US5106593A Apparatus for producing Czochralski-grown single crystals 失效
标题翻译：用于生产CZOCHRALSKI-GROWN单晶的装置
公开(公告)号：US5106593A
公开(公告)日：1992-04-21
申请号：US631850
申请日：1990-12-21
申请人： Koji Mizuishi , Michiaki Oda , Yasushi Nakamura , Seiichiro Ohtsuka , Atsushi Shiozawa , Fumio Yamada , Masahiro Mashimo , Tooru Ohara , Eizi Namiki
发明人： Koji Mizuishi , Michiaki Oda , Yasushi Nakamura , Seiichiro Ohtsuka , Atsushi Shiozawa , Fumio Yamada , Masahiro Mashimo , Tooru Ohara , Eizi Namiki
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/917 , Y10T117/106 , Y10T117/1072
摘要： An apparatus for producing a single crystal grown by Czochralski method includes a winding drum disposed in a case for winding up and down a flexible pull wire, a power transmission mechanism for driving the winding drum, and a bearing unit for rotatably supporting the winding drum. The power transmission mechanism and the bearing unit are disposed outside the case and isolated from the furnace atmosphere surrounding the winding drum and the pull wire in the case. With this construction, metallic dust produced by abrasion from the power transmission mechanism and the bearing unit has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire.

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