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11. 发明授权

US4569697A Method of forming photovoltaic quality amorphous alloys by passivating defect states 失效
标题翻译：通过钝化缺陷状态形成光伏质量非晶态合金的方法
公开(公告)号：US4569697A
公开(公告)日：1986-02-11
申请号：US526831
申请日：1983-08-26
申请人： Raphael Tsu , Stanford R. Ovshinsky , Jesus Hernandez , Denis Martin
发明人： Raphael Tsu , Stanford R. Ovshinsky , Jesus Hernandez , Denis Martin
IPC分类号： H01L31/04 , H01L21/205 , H01L31/20 , H01L21/203 , H01L31/18
CPC分类号： H01L31/208 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： Relatively dense, photovoltaic quality amorphous alloys which are characterized by reduced density of defect states in the band gaps thereof and which are particularly suited for use in tandem photovoltaic devices are formed by evaporating amorphous germanium and amorphous silicon in an ultrahigh vacuum environment, diffusing a density of states reducing element into and through the amorphous material, and finally annealing the resultant amorphous alloy to complete the diffusion process. The amorphous alloy, so formed, is a substantially contaminant-free, substantially tetrahedrally coordinated material. Fluorine is the preferred density of states reducing element which is added to the amorphous material for reducing the density of states through compensation, and for orbital promotion and expansion.
摘要翻译：通过在超高真空环境中蒸发无定形锗和非晶硅，形成特征在于其带隙中缺陷状态密度降低并且特别适用于串联光伏器件的相对致密的光伏质量非晶合金，其扩散密度的状态将元素还原并通过非晶材料，并且最终对所得到的非晶合金进行退火以完成扩散过程。如此形成的非晶合金是基本上无污染的，基本上四面体配位的材料。氟是优选的状态还原元素的密度，其被添加到无定形材料中以通过补偿降低状态密度，以及用于轨道促进和膨胀。

12. 发明授权

US4250515A Heterojunction superlattice with potential well depth greater than half the bandgap 失效
标题翻译：具有潜在阱深度大于带隙一半的异质结超晶格
公开(公告)号：US4250515A
公开(公告)日：1981-02-10
申请号：US914098
申请日：1978-06-09
申请人： Leo Esaki , Raphael Tsu , George A. Sai-Halasz , Leroy L. Chang
发明人： Leo Esaki , Raphael Tsu , George A. Sai-Halasz , Leroy L. Chang
IPC分类号： H01L29/15 , H01L29/205 , H01L47/00
CPC分类号： H01L29/155
摘要： A superlattice structure is disclosed in which alternating layers of semiductor alloy materials provide a one dimensional spatial periodic variation in band edge energy. A first layer of the superlattice device is an alloy including a first Group III material and a first Group V material, preferably In As, while the second layer is an alloy including a second Group III material different from the first Group III material and a second Group V material different from the first Group V material, and preferably GaSb. In the superlattice structure the valence band of the second alloy is closer to the conduction band of the first alloy than it is to the valence band of the first alloy.
摘要翻译：公开了一种超晶格结构，其中半导体合金材料的交替层提供带边能量的一维空间周期性变化。超晶格器件的第一层是包括第一III族材料和第一V族材料（优选In As）的合金，而第二层是包含不同于第一III族材料的第二III族材料的合金， V族材料与第一V族材料不同，优选为GaSb。在超晶格结构中，第二合金的价带比第一合金的价带更接近第一合金的导带。

13. 发明授权

US10374037B2 Incoherent type-III materials for charge carriers control devices 有权
公开(公告)号：US10374037B2
公开(公告)日：2019-08-06
申请号：US14759478
申请日：2014-02-27
申请人： Raphael Tsu , Ian T. Ferguson , Nikolaus Dietz
发明人： Raphael Tsu , Ian T. Ferguson , Nikolaus Dietz
IPC分类号： H01L29/06 , H01L29/15 , H03K3/011 , H01L29/267 , H01L29/205 , H01L31/0304 , H01L31/0352 , H01L29/20
摘要： A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.

14. 发明授权

US09000432B2 Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100) 有权
标题翻译：在GD2O3（100）/ N-SI（100）之间的界面处的增强的电子迁移率
公开(公告)号：US09000432B2
公开(公告)日：2015-04-07
申请号：US14314183
申请日：2014-06-25
申请人： Raphael Tsu , Wattaka Sitapura , John Hudak
发明人： Raphael Tsu , Wattaka Sitapura , John Hudak
IPC分类号： H01L29/12 , H01L29/47 , H01L29/24 , H01L21/02 , H01L21/28 , H01L29/51 , C23C14/08 , C23C14/24 , C30B23/02 , C30B29/16 , H01L29/78
CPC分类号： H01L29/47 , C23C14/08 , C23C14/24 , C30B23/025 , C30B29/16 , H01L21/02192 , H01L21/02269 , H01L21/02293 , H01L21/02565 , H01L21/28008 , H01L21/28185 , H01L21/28194 , H01L29/24 , H01L29/517 , H01L29/7839
摘要： A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
摘要翻译：提供多层结构。多层结构可以包括硅衬底和设置在硅衬底上的氧化钆膜。硅衬底的顶表面可以具有在100方向上取向的硅（Si（100）），并且其上设置的氧化钆可以具有在100方向上的取向（Gd 2 O 3（100））。

15. 发明授权

US08846506B2 Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100) 有权
标题翻译： Gd2O3（100）/ N-Si（100）之间的界面处的增强的电子迁移率
公开(公告)号：US08846506B2
公开(公告)日：2014-09-30
申请号：US13867380
申请日：2013-04-22
申请人： Raphael Tsu , Wattaka Sitapura , John Hudak
发明人： Raphael Tsu , Wattaka Sitapura , John Hudak
IPC分类号： H01L21/20 , C30B29/16 , H01L29/51 , C23C14/24 , H01L21/28 , H01L29/24 , C23C14/08 , C30B23/02 , H01L21/02 , H01L29/78
CPC分类号： H01L29/47 , C23C14/08 , C23C14/24 , C30B23/025 , C30B29/16 , H01L21/02192 , H01L21/02269 , H01L21/02293 , H01L21/02565 , H01L21/28008 , H01L21/28185 , H01L21/28194 , H01L29/24 , H01L29/517 , H01L29/7839
摘要： A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
摘要翻译：提供多层结构。多层结构可以包括硅衬底和设置在硅衬底上的氧化钆膜。硅衬底的顶表面可以具有在100方向上取向的硅（Si（100）），并且其上设置的氧化钆可以具有在100方向上的取向（Gd 2 O 3（100））。

16. 发明授权

US5895934A Negative differential resistance device based on tunneling through microclusters, and method therefor 失效
标题翻译：基于通过微型集群隧穿的负差动电阻装置及其方法
公开(公告)号：US5895934A
公开(公告)日：1999-04-20
申请号：US915547
申请日：1997-08-13
申请人： James F. Harvey , Robert A. Lux , Raphael Tsu
发明人： James F. Harvey , Robert A. Lux , Raphael Tsu
IPC分类号： H01L29/32 , H01L29/88
CPC分类号： B82Y10/00 , H01L29/32 , H01L29/882
摘要： A solid state electronic device exhibiting negative differential resistances fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N.sup.+. The amorphous silicon is simultaneously crystallized and oxidized in a dry N.sub.2 and O.sub.2 mixture. The result is a layer of amorphous Sio.sub.2 surrounding microclusters of crystalline silicon. A layer of polycrystalline silicon is deposited to a thickness of approximately 0.5 micron. Ohmic metal contacts are made to the top and bottom. These active layers are isolated by insulating SiO.sub.2. A bias voltage applied between the metal contacts results in negative differential resistance due to tunneling through resonant energy levels in microclusters.
摘要翻译：通过在掺杂N +的单晶衬底上沉积非晶硅薄层来制造显示负差分电阻的固态电子器件。非晶硅同时结晶并在干燥的N 2和O 2混合物中氧化。结果是结晶硅周围微团簇的无定形Sio2层。一层多晶硅沉积到约0.5微米的厚度。欧姆金属触点制成顶部和底部。这些有源层通过绝缘SiO 2来隔离。施加在金属触点之间的偏置电压导致由于在微型集群中通过谐振能级的隧穿而导致的负差分电阻。

17. 发明授权

US5627386A Silicon nanostructure light-emitting diode 失效
标题翻译：硅纳米结构发光二极管
公开(公告)号：US5627386A
公开(公告)日：1997-05-06
申请号：US549286
申请日：1995-10-27
申请人： James F. Harvey , Robert A. Lux , Raphael Tsu
发明人： James F. Harvey , Robert A. Lux , Raphael Tsu
IPC分类号： H01L33/34 , H01L27/15
CPC分类号： H01L33/34
摘要： The invention provides light sources which are easily compatible with standard silicon VLSI processing and can be located directly in the material of the silicon VLSI chip. P-type silicon substrate is processed to produce proturbances, the proturbances preferably having tip dimensions on the order of 5-10 mm. A native oxide film (SiO.sub.2) is caused to develop on the surface of the silicon substrate. A thin, transparent, conductive film is then deposited on top of the SiO.sub.2. Electrical contacts are made to the top of the conductive film and to the bottom of the silicon substrate. The carriers for electroluminescence are supplied by the P-doped silicon substrate (holes) and the conductive film (electrons). When a voltage is applied across the layers via the electrical contacts, the holes are concentrated in the region of the tip of the proturbances because the electric field lines concentrate near a pointed object, and electron current across the SiO.sub.2 barrier in response to the voltage drop will be largest in the vicinity of the tip because the SiO.sub.2 barrier is thinnest there, resulting in strong visible luminescence.
摘要翻译：本发明提供了与标准硅VLSI处理容易兼容的光源，并且可以直接位于硅VLSI芯片的材料中。 P型硅衬底被加工以产生温度，其优点是尖端尺寸为5-10mm。使天然氧化膜（SiO 2）在硅衬底的表面上显影。然后将薄的，透明的导电膜沉积在SiO 2的顶部上。电触点被制成导电膜的顶部和硅衬底的底部。用于电致发光的载体由P掺杂硅衬底（空穴）和导电膜（电子）提供。当通过电触点跨越层施加电压时，由于电场线集中在尖锐物体附近，所以孔集中在保护尖端的区域中，并且响应于电压降而跨越SiO 2势垒的电子电流在尖端附近将是最大的，因为SiO 2屏障在那里最薄，导致强烈的可见发光。

18. 发明授权

US4163238A Infrared semiconductor device with superlattice region 失效
标题翻译：带超晶格区域的红外半导体器件
公开(公告)号：US4163238A
公开(公告)日：1979-07-31
申请号：US914099
申请日：1978-06-09
申请人： Leo Esaki , Raphael Tsu
发明人： Leo Esaki , Raphael Tsu
IPC分类号： H01L33/00 , H01L33/06 , H01S5/30 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0025 , H01S5/30 , H01S5/34 , H01S5/3419
摘要： It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught.
摘要翻译：据说可以通过向具有超晶格区域的半导体器件施加电压来产生红外光，此外，可以在这种器件中实现群体反转，从而可以产生红外放大和振荡。公开了利用具有超晶格区域的半导体器件产生红外辐射和放大红外辐射的方法。此外，教导了具有用作激光放大器或振荡器的超晶格区域的半导体器件。

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