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11. 发明授权

US5978230A Battery mounting apparatuses, electronic devices, and methods of forming electrical connections 失效
公开(公告)号：US5978230A
公开(公告)日：1999-11-02
申请号：US26250
申请日：1998-02-19
申请人： Ross S. Dando , Rickie C. Lake , Krishna Kumar
发明人： Ross S. Dando , Rickie C. Lake , Krishna Kumar
IPC分类号： H01M2/10 , H05K1/18 , H05K3/28 , H05K3/32 , H05K7/06
CPC分类号： H05K3/284 , H01M2/1044 , H05K3/321 , H05K1/189 , H05K2201/10037 , H05K2201/10977 , H05K2203/085 , Y10T29/49169 , Y10T29/49171
摘要： Battery mounting apparatuses, electronic devices, and methods of forming electrical connections are described. In one implementation, a flexible circuit substrate has an area within which an electrical component, e.g. a thin-profile battery terminal housing member, is to be adhered. A conductive contact node pattern is disposed within the area and sized to be conductively adhered with the component. In one aspect, the conductive contact node pattern comprises an outer conductive node on the substrate at least a portion of which is positioned within the outermost 25% of the area. An electrical component is conductively bonded with the contact node pattern and encapsulating material is provided over and underneath the component. In a preferred aspect, the substrate and electrical component are vacuum processed sufficiently to redistribute the encapsulating material under the component. The positioning of the contact node pattern provides sufficient support during vacuum processing such that any tendency of the substrate to become lodged against the component is reduced, if not eliminated.

12. 发明授权

US07863187B2 Microfeature workpieces and methods for forming interconnects in microfeature workpieces 有权
标题翻译：微型工件和在微型工件中形成互连的方法
公开(公告)号：US07863187B2
公开(公告)日：2011-01-04
申请号：US11217169
申请日：2005-09-01
申请人： William M. Hiatt , Ross S. Dando
发明人： William M. Hiatt , Ross S. Dando
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13025
摘要： Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.
摘要翻译：在微型工件中形成互连的方法以及具有这种互连的微型工件在此公开。微型工件可以具有端子和具有承载端子的第一侧和与第一侧相对的第二侧的基板。在一个实施例中，一种方法包括（a）构造从终端延伸到衬底中的至少中间深度的导电互连，其中互连电连接到端子，以及（b）从衬底的第二侧去除材料使得互连的一部分从基板突出。

13. 发明授权

US07845540B2 Systems and methods for depositing conductive material into openings in microfeature workpieces 失效
标题翻译：将导电材料沉积在微型工件的开口中的系统和方法
公开(公告)号：US07845540B2
公开(公告)日：2010-12-07
申请号：US11215214
申请日：2005-08-30
申请人： Rick C. Lake , Ross S. Dando
发明人： Rick C. Lake , Ross S. Dando
IPC分类号： B23K1/18 , B23K31/02
CPC分类号： B23K3/0669 , B23K2101/40
摘要： Systems and methods for depositing conductive material into openings in microfeature workpieces are disclosed herein. One particular embodiment of a system for processing microfeature workpieces includes a processing chamber and a solder reservoir in the processing chamber. The solder reservoir includes a slot having a generally vertical orientation positioned to receive a microfeature workpiece. In several embodiments, the system can further include a conductive material at least partially filling the slot.
摘要翻译：本文公开了用于将导电材料沉积在微特征工件的开口中的系统和方法。用于处理微特征工件的系统的一个具体实施例包括在处理室中的处理室和焊料储存器。焊料储存器包括具有定位成接收微特征工件的大致垂直取向的槽。在几个实施例中，系统还可以包括至少部分地填充槽的导电材料。

14. 再颁专利

USRE41815E1 System and method for electronic tracking of units associated with a batch 有权
标题翻译：用于与批次相关联的单元的电子跟踪的系统和方法
公开(公告)号：USRE41815E1
公开(公告)日：2010-10-12
申请号：US11872382
申请日：2007-10-15
申请人： Ross S. Dando , Mark E. Tuttle
发明人： Ross S. Dando , Mark E. Tuttle
IPC分类号： G08B13/14
CPC分类号： G06K7/10366 , A22B5/0064 , A22B7/00 , A22B7/007 , A22C17/10 , G06K7/0008 , G06K17/0022 , G06K2017/0045 , G08B13/2434 , G08B13/2462
摘要： In one aspect, the invention encompasses a method for electronic tracking of units originating from a common source which comprises a plurality of units physically joined with one another. A first transponder is physically associated with the common source, and the source is split to separate it into three or more of the units. A second transponder is physically associated with one of the three or more units, and the second transponder sends a code. The code of the second transponder is electrically associated with an identifier of the common source. In a particular aspect, the common source is an animal carcass. A batch comprises separate units of objects that are physically joined together. RFID tags are attached to each of the units and to the batch. The codes stored in the RFID tags are electrically associated with one another in a database.
摘要翻译：一方面，本发明包括用于电子跟踪源自公共源的单元的方法，该方法包括彼此物理连接的多个单元。第一个转发器与公共源物理关联，源被拆分成三个或更多个单元。第二个转发器与三个或更多个单元中的一个物理相关联，第二个应答器发送一个代码。第二应答器的代码与公共源的标识符电连接。在一个特定方面，共同的来源是动物尸体。批次包括物理连接在一起的单独的物体单元。 RFID标签连接到每个单元和批次。存储在RFID标签中的代码在数据库中彼此电联系。

15. 再颁专利

USRE41562E1 System and method for electronic tracking of units associated with a batch 有权
公开(公告)号：USRE41562E1
公开(公告)日：2010-08-24
申请号：US11102887
申请日：2005-04-08
申请人： Ross S. Dando , Mark E. Tuttle
发明人： Ross S. Dando , Mark E. Tuttle
IPC分类号： G06B13/14 , G06K17/00
CPC分类号： G06K7/10366 , A22B5/0064 , A22B7/00 , A22B7/007 , A22C17/10 , G06K7/0008 , G06K17/0022 , G06K2017/0045 , G08B13/2434 , G08B13/2462
摘要： In one aspect, the invention encompasses a method for electronic tracking of units originating from a common source which comprises a plurality of units physically joined with one another. A first transponder is physically associated with the common source, and the source is split to separate it into three or more of the units. A second transponder is physically associated with one of the three or more units, and the second transponder sends a code. The code of the second transponder is electrically associated with an identifier of the common source. In a particular aspect, the common source is an animal carcass. A batch comprises separate units of objects that are physically joined together. RFID tags are attached to each of the units and to the batch. The codes stored in the RFID tags are electrically associated with one another in a database.

16. 发明授权

US07378127B2 Chemical vapor deposition methods 失效
标题翻译：化学气相沉积法
公开(公告)号：US07378127B2
公开(公告)日：2008-05-27
申请号：US09805620
申请日：2001-03-13
申请人： Craig M. Carpenter , Ross S. Dando
发明人： Craig M. Carpenter , Ross S. Dando
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45519 , C23C16/45527
摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by chamber walls, a substrate holder inside the chamber, and at least one process chemical inlet to the chamber. At least one purge inlet to the chamber is positioned elevationally above the substrate holder and outside a lateral periphery of the substrate holder. The purge inlet is configured to inject at least one purge material into the chamber and past the substrate holder. The purge inlet can be positioned and configured to inject an annular purge material curtain concentric to the substrate holder. A chemical vapor deposition method includes injecting at least one purge material into a deposition chamber and forming a purge curtain from the injected purge material. The purge curtain can extend downward from elevationally above a substrate holder and outside a lateral periphery of the substrate holder. The purge curtain can flow past the substrate holder.
摘要翻译：化学气相沉积设备包括至少部分地由室壁限定的沉积室，室内的衬底保持器，以及至室的至少一个工艺化学入口。至少一个到室的净化入口位于衬底保持器的正上方并且位于衬底保持器的侧边外侧。净化入口构造成将至少一种清洗材料注入室中并经过衬底保持器。吹扫入口可以被定位和构造成将衬套保持器同心的环形吹扫材料窗口注入。化学气相沉积方法包括将至少一种吹扫材料注入沉积室并从注入的吹扫材料形成清洗帘。清洗帘幕可从基板保持器的正上方向下延伸并且在基板保持器的侧边外侧延伸。清洗帘可以流过基板支架。

17. 发明申请

US20080057691A1 Methods and systems for selectively filling apertures in a substrate to form conductive vias with a liquid using a vacuum 有权
标题翻译：用于选择性地填充衬底中的孔以与使用真空的液体形成导电通孔的方法和系统
公开(公告)号：US20080057691A1
公开(公告)日：2008-03-06
申请号：US11511619
申请日：2006-08-29
申请人： Ross S. Dando , Steven Oliver , Swarnal Borthakur , Kevin Hutto
发明人： Ross S. Dando , Steven Oliver , Swarnal Borthakur , Kevin Hutto
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H05K3/3468 , H05K2201/09572 , H05K2203/0763 , H05K2203/082
摘要： Methods of forming a conductive via in a substrate include contacting the substrate with a wave of conductive liquid material, such as molten solder, and drawing the liquid material into the aperture with a vacuum. The wave may be formed by flowing the liquid material out from an outlet in a direction generally against the gravitational field. The liquid material may be solidified to form an electrically conductive structure. A plurality of apertures may be selectively filled with the liquid material one at a time, and liquids having different compositions may be used to provide conductive vias having different compositions in the same substrate. Systems for forming conductive vias include a substrate fixture, a vacuum device having a vacuum fixture, and a solder dispensing device configured to provide a wave of molten solder material. Relative lateral and vertical movement is provided between the wave of molten solder and a substrate supported by the substrate fixture.
摘要翻译：在衬底中形成导电通孔的方法包括使衬底与诸如熔融焊料的导电液体材料的波接触，并且用真空将液体材料拉入孔中。该波浪可以通过使液体材料沿着通常抵靠重力场的方向从出口流出而形成。液体材料可以被固化以形成导电结构。可以一次一个地选择性地填充多个孔，并且可以使用具有不同组成的液体来在同一基底中提供具有不同组成的导电通孔。用于形成导电通孔的系统包括衬底夹具，具有真空夹具的真空装置以及被配置为提供熔融焊料材料波的焊料分配装置。在熔融焊料的波浪和由基板夹具支撑的基板之间提供相对的横向和垂直运动。

18. 发明授权

US07000636B2 Valve assemblies for use with a reactive precursor in semiconductor processing 失效
标题翻译：用于半导体加工中的反应性前体的阀组件
公开(公告)号：US07000636B2
公开(公告)日：2006-02-21
申请号：US10691769
申请日：2003-10-22
申请人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
发明人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
IPC分类号： F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译：本发明包括化学气相沉积方法，包括原子层沉积和用于半导体加工中的反应性前体的阀组件。在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。第一种物质流入沉积室。在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。考虑了其他方面和实现。

19. 发明授权

US06997403B2 Liquid vaporizer with positive liquid shut-off 失效
标题翻译：液体蒸发器具有正液体关闭
公开(公告)号：US06997403B2
公开(公告)日：2006-02-14
申请号：US10340976
申请日：2003-01-13
申请人： Ross S. Dando , Allen P. Mardian , Raynald B. Cantin , Gurtej S. Sandhu
发明人： Ross S. Dando , Allen P. Mardian , Raynald B. Cantin , Gurtej S. Sandhu
IPC分类号： B05B1/30 , B05B1/24 , C23C16/00 , F22B23/06
CPC分类号： H01L21/6708 , C23C16/4481
摘要： The present invention is generally directed to a vaporizer with positive liquid shut-off. In one illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body, a nozzle positioned within the body, the nozzle having at least one opening formed therethrough that defines a vaporized liquid exit, and a positive shut-off valve, a portion of which is adapted to engage the vaporized liquid exit of the nozzle. In another illustrative embodiment, the vaporizer is comprised of a body, a liquid inlet and a carrier gas inlet coupled to the body and a plurality of peltier cells coupled to the body.
摘要翻译：本发明一般涉及具有正液体截止的汽化器。在一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口，位于主体内的喷嘴，喷嘴具有限定蒸发的液体出口的至少一个通过其形成的开口，以及正截止阀，其一部分适于接合喷嘴的汽化液体出口。在另一个说明性实施例中，蒸发器包括主体，液体入口和连接到主体的载气入口以及耦合到主体的多个珀耳帖细胞。

20. 发明授权

US06935372B2 Semiconductor processing reactive precursor valve assembly 失效
标题翻译：半导体加工反应性前体阀组件
公开(公告)号：US06935372B2
公开(公告)日：2005-08-30
申请号：US11034015
申请日：2005-01-11
申请人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
发明人： Ross S. Dando , Gurtej S. Sandhu , Allen P. Mardian
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , C30B25/10 , C30B25/14 , F16K11/085
CPC分类号： C30B25/14 , C23C16/452 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45561 , C30B25/105 , Y10S118/90 , Y10T137/86839 , Y10T137/86863
摘要： The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.
摘要翻译：本发明包括化学气相沉积方法，包括原子层沉积，以及用于半导体加工中的反应性前体的阀组件。在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在化学气相沉积室内。第一沉积前体被供给到位于沉积室上游的远程等离子体产生室，并且在远程室内产生等离子体，并有效地形成第一活性沉积前体物质。第一种物质流入沉积室。在流动期间，至少一些第一物质的流动被转移进入沉积室，同时在远程室内馈送和保持第一沉积前体的等离子体产生。在某些时候，在远程室内进给和维持第一沉积前体的等离子体产生的同时停止转移。考虑了其他方面和实现。

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