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11. 发明授权

US09390831B2 Electronic device using anisotropic conductive composition and film 有权
标题翻译：使用各向异性导电组合物和薄膜的电子装置
公开(公告)号：US09390831B2
公开(公告)日：2016-07-12
申请号：US13680893
申请日：2012-11-19
申请人： Kyoung Soo Park , Nam Ju Kim , Young Woo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Arum Yu , Hyun Min Choi , Jae Sun Han
发明人： Kyoung Soo Park , Nam Ju Kim , Young Woo Park , Joon Mo Seo , Kyung Il Sul , Dong Seon Uh , Arum Yu , Hyun Min Choi , Jae Sun Han
IPC分类号： H01B1/22 , H01R4/04 , H05K3/32 , C09J9/02 , H01B1/12
CPC分类号： H01B1/22 , C09J9/02 , H01B1/12 , H01B1/122 , H01R4/04 , H05K3/323
摘要： An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(═O)R4, —C(═O)OR5, and —C(═O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.
摘要翻译：电子装置包括由粘合剂组合物形成的连接材料，所述粘合剂组合物包括：聚合物树脂; 由式1表示的阳离子聚合催化剂; 和有机碱，其中，在式1中，R 1可以选自氢，C 1 -C 6烷基，C 6 -C 14芳基，-C（= O）R 4，-C（= O）OR 5和-C （ΟO）NHR 6（其中R 4，R 5和R 6可各自独立地选自C 1 -C 6烷基和C 6 -C 14芳基），R 2可以是C 1 -C 6烷基，R 3可以选自硝基苄基二硝基苄基，三硝基苄基，苄基，C1-C6烷基取代的苄基和萘基甲基。

12. 发明授权

US09281097B2 Anisotropic conductive film, composition for the same, and apparatus including the same 有权
标题翻译：各向异性导电膜，其组合物及其制造方法
公开(公告)号：US09281097B2
公开(公告)日：2016-03-08
申请号：US14056989
申请日：2013-10-18
申请人： Youn Jo Ko , Dong Seon Uh , Jang Hyun Cho , Jin Seong Park , Sang Sik Bae , Jin Kyu Kim
发明人： Youn Jo Ko , Dong Seon Uh , Jang Hyun Cho , Jin Seong Park , Sang Sik Bae , Jin Kyu Kim
IPC分类号： H01B1/22 , C09J9/02 , C09J175/16 , C08F290/06 , C09J4/06
CPC分类号： H01B1/22 , C08F290/067 , C08K3/08 , C08L9/02 , C08L33/04 , C08L33/10 , C08L33/12 , C08L35/04 , C08L75/04 , C08L75/14 , C09J4/06 , C09J9/02 , C09J109/02 , C09J175/16 , C08F290/048
摘要： An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the anisotropic conductive film has a halogen ion content of more than 0 ppm to about 100 ppm.
摘要翻译：各向异性导电膜包括粘合剂部分，固化部分，引发剂和导电颗粒，其中粘合剂部分包括丁腈橡胶（NBR）树脂和聚氨酯树脂中的至少一种，各向异性导电膜具有卤素离子含量大于0ppm至约100ppm。

13. 发明授权

US10141084B2 Electronic device 有权
公开(公告)号：US10141084B2
公开(公告)日：2018-11-27
申请号：US13834349
申请日：2013-03-15
申请人： Kyoung Soo Park , Woo Suk Lee , Woo Jun Lim , Kyung Jin Lee , Bong Yong Kim , Jin Seong Park , Dong Seon Uh , Youn Jo Ko , Jang Hyun Cho , Sang Sik Bae , Jin Kyu Kim
发明人： Kyoung Soo Park , Woo Suk Lee , Woo Jun Lim , Kyung Jin Lee , Bong Yong Kim , Jin Seong Park , Dong Seon Uh , Youn Jo Ko , Jang Hyun Cho , Sang Sik Bae , Jin Kyu Kim
IPC分类号： H01L23/52 , H01B3/08 , H01B7/00 , H01B13/00 , H01L23/00 , C09J133/06 , C09J7/10 , C08K3/08
摘要： An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

14. 发明授权

US09173303B2 Anisotropic conductive film and apparatus including the same 有权
标题翻译：各向异性导电膜及其制造方法
公开(公告)号：US09173303B2
公开(公告)日：2015-10-27
申请号：US13311920
申请日：2011-12-06
申请人： Young Woo Park , Arum Amy Yu , Nam Ju Kim , Hyun Min Choi , Jin Seong Park , Dong Seon Uh
发明人： Young Woo Park , Arum Amy Yu , Nam Ju Kim , Hyun Min Choi , Jin Seong Park , Dong Seon Uh
IPC分类号： C09K19/00 , H05K3/32 , C09J163/00 , B32B7/02 , B32B27/08 , B32B27/18 , B32B27/26 , B32B27/38 , C08J5/18 , G02F1/1345 , H01R4/04
CPC分类号： H05K3/323 , B32B7/02 , B32B27/08 , B32B27/18 , B32B27/26 , B32B27/38 , B32B2250/02 , B32B2250/24 , B32B2264/102 , B32B2264/12 , B32B2307/202 , B32B2307/706 , B32B2457/202 , C08J5/18 , C08J2363/00 , C09J163/00 , G02F1/13452 , H01R4/04 , Y10T428/1055
摘要： An apparatus includes a first member including a plurality of first electrodes on a first substrate, a second member including a plurality of second electrodes on a second substrate, the second electrodes facing the first electrodes of the first member, and an anisotropic conductive film (ACF) between the first member and the second member, the ACF having a double-layered structure and electrically connecting the first member and the second member, the ACF including an epoxy resin with a polycyclic aromatic ring and exhibiting a minimum melt viscosity of about 3,000 Pa·s to about 10,000 Pa·s at about 30° C. to about 200° C.
摘要翻译：一种装置包括：第一构件，包括在第一衬底上的多个第一电极，第二构件，在第二衬底上包括多个第二电极，第二电极面对第一构件的第一电极;以及各向异性导电膜（ACF ），所述ACF具有双层结构并且电连接所述第一构件和所述第二构件，所述ACF包括具有多环芳环的环氧树脂并且具有约3,000Pa的最小熔体粘度在约30℃至约200℃的温度下至约10,000Pa·s

15. 发明申请

US20090140216A1 Anisotropic conductive film composition, anisotropic conductive film including the same, and associated methods 有权
标题翻译：各向异性导电膜组合物，各向异性导电膜及其相关方法
公开(公告)号：US20090140216A1
公开(公告)日：2009-06-04
申请号：US12289963
申请日：2008-11-07
申请人： Hyoun Young Kim , Dong Seon Uh , Jeong Ku Kang , Young Hoon Kim , Jae Sun Han , Ja Young Hwang , Gyu Ho Lee , Tae Hyun Lee
发明人： Hyoun Young Kim , Dong Seon Uh , Jeong Ku Kang , Young Hoon Kim , Jae Sun Han , Ja Young Hwang , Gyu Ho Lee , Tae Hyun Lee
IPC分类号： H01B1/20 , H01B1/22 , H01B1/24
CPC分类号： H05K3/323 , C08J5/18 , C08J2363/00
摘要： An anisotropic conductive film composition includes a polymer resin, a first epoxy resin including at least one of a bisphenol epoxy resin, a novolac epoxy resin, a glycidyl epoxy resin, an aliphatic epoxy resin, and an alicyclic epoxy resin, a second epoxy resin including an acetal epoxy resin, an epoxy resin curing agent, and conductive particles.
摘要翻译：各向异性导电膜组合物包括聚合物树脂，包含双酚环氧树脂，酚醛环氧树脂，缩水甘油环氧树脂，脂族环氧树脂和脂环族环氧树脂中的至少一种的第一环氧树脂，包括缩醛环氧树脂，环氧树脂固化剂和导电颗粒。

16. 发明授权

US08299197B2 Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same 有权
标题翻译：具有改善半导体器件间隙填充性能的有机硅烷聚合物和使用其的涂料组合物
公开(公告)号：US08299197B2
公开(公告)日：2012-10-30
申请号：US12659379
申请日：2010-03-08
申请人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
发明人： Chang Soo Woo , Hyun Hoo Sung , Jin Hee Bae , Dong Seon Uh , Jong Seob Kim
IPC分类号： C08G77/08
CPC分类号： C08G77/50 , C08L83/14
摘要： A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3 (1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX (2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R′ (3) wherein R and R′ are independently a C1-C6 alkyl group; and [RO]3Si—H (4) wherein R is a C1-C6 alkyl group.
摘要翻译：一种用于半导体器件间隙填充的聚合物，该聚合物通过由式1表示的化合物的水解产物，由式2表示的化合物和一种或多种由式3和4表示的化合物缩合制备：[RO] 3 Si - [CH 2] n -Si [OR] 3（1）其中n为0至2，并且每个R独立地为C 1 -C 6烷基; [RO] 3Si- [CH2] nX（2）其中X为C6-C12芳基，n为0-2，R为C1-C6烷基; [RO] 3Si-R'（3）其中R和R'独立地为C1-C6烷基; 和[RO] 3 Si-H（4）其中R是C1-C6烷基。

17. 发明授权

US08263321B2 Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer 有权
标题翻译：具有抗反射性能和高碳含量的聚合物，包含其的硬掩模组合物，以及用于形成图案化材料层的方法
公开(公告)号：US08263321B2
公开(公告)日：2012-09-11
申请号：US12929072
申请日：2010-12-29
申请人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
发明人： Kyong Ho Yoon , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyung Hee Hyung , Min Soo Kim , Jin Kuk Lee
IPC分类号： G03F7/40 , C08G61/12 , C08L65/00
CPC分类号： G03F7/091 , C08G61/02 , C08G61/10 , G03F7/11 , Y10S438/952
摘要： An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.
摘要翻译：抗反射硬掩模组合物包括有机溶剂，引发剂和至少一种如说明书中所述由式A，B或C表示的聚合物。

18. 发明授权

US07879526B2 Hardmask compositions for resist underlayer films 有权
标题翻译：用于抗蚀剂底层膜的硬掩模组合物
公开(公告)号：US07879526B2
公开(公告)日：2011-02-01
申请号：US11508074
申请日：2006-08-22
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/825
CPC分类号： H01L21/0273 , G03F7/11
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m (2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中根据本发明的一些实施方案，硬掩模组合物包括通过式1的化合物与式2（R）m-Si-（OCH 3）的化合物反应制备的聚合物，（2）在催化剂存在下，其中R为一价有机基团，n为3至20的整数，m为1或2; 和有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。还提供了通过本发明的方法实施例制造的半导体集成电路器件。

19. 发明授权

US07655386B2 Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device 有权
标题翻译：具有抗反射性的聚合物，包含其的硬掩模组合物，用于形成图案化材料层的方法和相关联的装置
公开(公告)号：US07655386B2
公开(公告)日：2010-02-02
申请号：US12003152
申请日：2007-12-20
申请人： Kyung Hee Hyung , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyong Ho Yoon , Min Soo Kim , Jin Kuk Lee
发明人： Kyung Hee Hyung , Jong Seob Kim , Dong Seon Uh , Chang Il Oh , Kyong Ho Yoon , Min Soo Kim , Jin Kuk Lee
IPC分类号： G03F7/40 , C08G61/12 , C07C2/88 , C07F9/40 , G03F7/11
CPC分类号： G03F7/091 , C08G61/02
摘要： An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1 is methylene or includes a non-fluorene-containing aryl linking group.
摘要翻译：抗反射硬掩模组合物包括有机溶剂和由式A，B或C表示的至少一种聚合物：在式A和B中，芴基是未取代的或取代的，在式C中，萘基是未取代的或取代的，n 至少为1，小于约750，m为至少1，m + n小于约750，G为含有烷氧基的芳香环，R1为亚甲基或包含非芴的芳基连接基团。

20. 发明授权

US07405029B2 Antireflective hardmask composition and methods for using same 有权
标题翻译：防反射硬掩模组合物及其使用方法
公开(公告)号：US07405029B2
公开(公告)日：2008-07-29
申请号：US11325281
申请日：2006-01-04
申请人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
发明人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
IPC分类号： G03C1/73 , G03C1/76 , G03F7/095
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, C1-10 alkyl, C6-10 aryl, allyl, or halo; R3 and R4 may be each independently be hydrogen, a crosslinking functionality, or a chromophore; R5 and R6 may each independently be hydrogen or an alkoxysiloxane having the structure of Formula (II), wherein at least one of R5 and R6 is an alkoxysilane; wherein R8, R9, and R10 may each independently be a hydrogen, alkyl, or aryl; and x is 0 or a positive integer; R7 may be hydrogen, C1-10 alkyl, C6-10 aryl, or allyl; and n is a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有式（I）的单体单元的聚合物的聚合物组分，其中R 1和R 2各自独立地是氢，羟基，C 1-10烷基，C 6-10芳基，烯丙基或卤素; R 3和R 4可以各自独立地为氢，交联官能团或发色团; R 5和R 6可各自独立地为氢或具有式（II）结构的烷氧基硅氧烷，其中R 5和和R 6是烷氧基硅烷; 其中R 8，R 9和R 10可各自独立地为氢，烷基或芳基; x为0或正整数; R 7可以是氢，C 1-10烷基，C 6-10芳基或烯丙基; 并且n是正整数; （b）交联组分; 和（c）酸催化剂。

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