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    • 18. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD OF THE SAME
    • 有机发光二极管显示及其制作方法
    • US20110186847A1
    • 2011-08-04
    • US13020687
    • 2011-02-03
    • Jong-Yun KimIl-Jeong LeeDo-Hyun KwonJong-Mo Yeo
    • Jong-Yun KimIl-Jeong LeeDo-Hyun KwonJong-Mo Yeo
    • H01L51/52H01L51/56
    • H01L51/52H01L27/1255H01L29/4908H01L51/56
    • An organic light emitting diode display and a fabricating method of the same are disclosed. In one embodiment, the display includes i) a substrate having a thin film transistor region and a pixel region, ii) a semiconductor layer formed in the thin film transistor region, iii) a gate insulating layer formed on the substrate and the semiconductor layer and vi) a lower electrode formed on the gate insulating layer, wherein the lower electrode is formed in the pixel region. The display further includes i) a gate electrode formed on the gate insulating layer, wherein the gate electrode is formed substantially directly above the semiconductor layer, ii) an interlayer insulating layer formed on the gate insulating layer, the lower electrode and the gate electrode and iii) source and drain electrodes formed on the interlayer insulating layer and electrically connected with the semiconductor layer. Each of the lower electrode and the gate electrode is formed of a first conductive layer and a second conductive layer formed on the first conductive layer. The second conductive layer and the source/drain electrodes are formed of the same material.
    • 公开了一种有机发光二极管显示器及其制造方法。 在一个实施例中,显示器包括i)具有薄膜晶体管区域和像素区域的衬底,ii)形成在薄膜晶体管区域中的半导体层,iii)形成在衬底和半导体层上的栅极绝缘层,以及 vi)形成在栅绝缘层上的下电极,其中下电极形成在像素区域中。 所述显示器还包括i)形成在所述栅极绝缘层上的栅电极,其中所述栅电极基本上直接形成在所述半导体层上方,ii)形成在所述栅绝缘层,所述下电极和所述栅电极上的层间绝缘层,以及 iii)形成在层间绝缘层上并与半导体层电连接的源极和漏极。 下电极和栅电极各自由形成在第一导电层上的第一导电层和第二导电层形成。 第二导电层和源极/漏极由相同的材料形成。