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11. 发明授权

US08159866B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08159866B2
公开(公告)日：2012-04-17
申请号：US12609764
申请日：2009-10-30
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C11/00 , G11C5/08 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

12. 发明授权

US08456882B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08456882B2
公开(公告)日：2013-06-04
申请号：US13415261
申请日：2012-03-08
申请人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
发明人： Dmytro Apalkov , Vladimir Nikitin , David Druist , Steven M. Watts
IPC分类号： G11C5/08 , G11C11/06 , G11C11/14 , G11C11/15
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The first pinned layer has a first pinned layer magnetic moment and is nonmagnetic layer-free. The first nonmagnetic spacer layer resides between the first pinned and free layers. The free layer resides between the first and second nonmagnetic spacer layers. The second pinned layer has a second pinned layer magnetic moment and is nonmagnetic layer-free. The second nonmagnetic spacer layer resides between the free and second pinned layers. The first and second pinned layer magnetic moments are antiferromagnetically coupled and self-pinned. The magnetic junction is configured to allow the free layer to be switched between stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。第一被钉扎层具有第一钉扎层磁矩并且是非磁性层。第一非磁性间隔层位于第一被钉扎层和自由层之间。自由层位于第一和第二非磁性间隔层之间。第二被钉扎层具有第二钉扎层磁矩并且是非磁性层。第二非磁性间隔层位于自由和第二被钉扎层之间。第一和第二钉扎层磁矩是反铁磁耦合和自固定的。磁结被配置为当写入电流通过磁性结时，允许自由层在稳定的磁状态之间切换。

13. 发明授权

US08698259B2 Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
标题翻译：使用热辅助切换提供磁隧道结的方法和系统
公开(公告)号：US08698259B2
公开(公告)日：2014-04-15
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

14. 发明申请

US20130154035A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC TUNNELING JUNCTION USING THERMALLY ASSISTED SWITCHING 有权
标题翻译：使用热辅助开关提供磁性隧道接头的方法和系统
公开(公告)号：US20130154035A1
公开(公告)日：2013-06-20
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22 , G11B5/84 , B05D5/12 , G11B5/66 , G11B5/673
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

15. 发明授权

US09142758B2 Method and system for providing a magnetic junction configured for precessional switching using a bias structure 有权
标题翻译：用于提供使用偏置结构配置为进动切换的磁结的方法和系统
公开(公告)号：US09142758B2
公开(公告)日：2015-09-22
申请号：US13495830
申请日：2012-06-13
申请人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。第一非磁性间隔层位于第一被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

16. 发明授权

US08697484B2 Method and system for setting a pinned layer in a magnetic tunneling junction 有权
标题翻译：用于设置磁隧道结中钉扎层的方法和系统
公开(公告)号：US08697484B2
公开(公告)日：2014-04-15
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

17. 发明申请

US20130154034A1 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION 有权
标题翻译：用于在磁性隧道结中设置固定层的方法和系统
公开(公告)号：US20130154034A1
公开(公告)日：2013-06-20
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

18. 发明授权

US08432009B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
标题翻译：用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统
公开(公告)号：US08432009B2
公开(公告)日：2013-04-30
申请号：US13011849
申请日：2011-01-21
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。被钉扎层和自由层中的至少一个包括磁性子结构。磁性子结构包括与至少一个插入层交错的至少两个磁性层。每个插入层包括Cr，Ta，Ti，W，Ru，V，Cu，Mg，氧化铝和MgO中的至少一种。磁层交换耦合。

19. 发明申请

US20120319221A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE 有权
标题翻译：提供使用偏置结构进行精密切换配置的磁连接的方法和系统
公开(公告)号：US20120319221A1
公开(公告)日：2012-12-20
申请号：US13495830
申请日：2012-06-13
申请人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
IPC分类号： H01L27/22 , H01L43/12 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。第一非磁性间隔层位于第一被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

20. 发明申请

US20120168885A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC LAYERS HAVING INSERTION LAYERS FOR USE IN SPIN TRANSFER TORQUE MEMORIES 有权
标题翻译：用于提供插入层的磁性层的方法和系统，用于旋转传递扭矩记忆
公开(公告)号：US20120168885A1
公开(公告)日：2012-07-05
申请号：US13011849
申请日：2011-01-21
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。被钉扎层和自由层中的至少一个包括磁性子结构。磁性子结构包括与至少一个插入层交错的至少两个磁性层。每个插入层包括Cr，Ta，Ti，W，Ru，V，Cu，Mg，氧化铝和MgO中的至少一种。磁层交换耦合。

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