专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07782577B2 MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture 有权
标题翻译：用于抗铁磁体的牺牲层的MRAM结构及其制造方法
公开(公告)号：US07782577B2
公开(公告)日：2010-08-24
申请号：US11448170
申请日：2006-06-06
申请人： Wolfgang Raberg , Ulrich Klostermann
发明人： Wolfgang Raberg , Ulrich Klostermann
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01L43/08 , H01L43/12
摘要： A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.
摘要翻译：磁性随机存取存储器结构包括反铁磁层结构，物理耦合到反铁磁层结构的结晶铁磁结构和物理耦合到结晶铁磁结构的铁磁自由层结构。

12. 发明授权

US07697322B2 Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module 失效
标题翻译：集成电路; 集成电路制造方法; 降低磁场影响的方法; 内存模块
公开(公告)号：US07697322B2
公开(公告)日：2010-04-13
申请号：US11775599
申请日：2007-07-10
申请人： Rainer Leuschner , Ulrich Klostermann
发明人： Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction may include a free layer with a magnetization orientation that is selected by the application of a write current through the magnetic tunnel junction, and a retention layer that retains the selectable magnetization orientation of the free layer at temperatures below a retention temperature.
摘要翻译：本发明的实施例一般涉及集成电路，集成电路的制造方法，减小磁场影响的方法以及存储器模块。在本发明的实施例中，提供了具有磁性隧道结的集成电路。磁性隧道结可以包括具有通过施加通过磁性隧道结的写入电流而选择的磁化取向的自由层，以及在低于保持温度的温度下保持自由层的可选磁化取向的保留层。

13. 发明申请

US20090273966A1 Integrated Circuit, Memory Cell Array, Memory Module, and Method of Operating an Integrated Circuit 有权
标题翻译：集成电路，存储单元阵列，存储器模块和操作集成电路的方法
公开(公告)号：US20090273966A1
公开(公告)日：2009-11-05
申请号：US12114466
申请日：2008-05-02
申请人： Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
发明人： Dietmar Gogl , Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/02
CPC分类号： G11C11/1675 , G11C11/1659
摘要： According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a programming current. The integrated circuit is configured such that the heating current and the programming current can be routed respectively to the first and the second portion of the conductive line independently from each other.
摘要翻译：根据本发明的一个实施例，集成电路包括多个热可选择存储单元，每个存储单元连接到导电线，该导线具有用于施加加热电流的第一部分和用于施加加热电流的第二部分编程电流。集成电路被配置为使得加热电流和编程电流可以彼此独立地分别路由到导线的第一和第二部分。

14. 发明授权

US07602032B2 Memory having cap structure for magnetoresistive junction and method for structuring the same 失效
标题翻译：具有用于磁阻结的帽结构的存储器及其结构化方法
公开(公告)号：US07602032B2
公开(公告)日：2009-10-13
申请号：US11117854
申请日：2005-04-29
申请人： Ulrich Klostermann , Chanro Park , Wolfgang Raberg
发明人： Ulrich Klostermann , Chanro Park , Wolfgang Raberg
IPC分类号： H01L29/82
CPC分类号： G11C11/15 , H01L43/08 , H01L43/12
摘要： A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.
摘要翻译：公开了一种存储器和制造存储器的方法。在一个实施例中，存储器包括用于磁阻随机存取存储器件的盖结构，其包括形成在磁阻结（MTJ / MCJ）分层结构的上磁层上的蚀刻停止层和形成在所述蚀刻停止层上的硬掩模层，其中所述蚀刻停止层选自材料，使得用于去除所述硬掩模层的蚀刻化学性质对蚀刻所述蚀刻停止层材料具有选择性。在打开硬掩模层的方法中，实现去除硬掩模层的暴露部分的蚀刻工艺，其中蚀刻工艺在蚀刻停止层上终止。

15. 发明申请

US20090072217A1 Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module 有权
标题翻译：集成电路; 制造集成电路和存储器模块的方法
公开(公告)号：US20090072217A1
公开(公告)日：2009-03-19
申请号：US11856668
申请日：2007-09-17
申请人： Ulrich Klostermann
发明人： Ulrich Klostermann
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L27/2463 , H01L45/085 , H01L45/1226 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1658
摘要： Embodiments of the present invention relate generally to integrated circuits, to methods for manufacturing an integrated circuit and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a programmable arrangement. The programmable arrangement includes a substrate having a main processing surface, at least two first electrodes, wherein each of the two first electrodes has a side surface being arranged at a respective angle with regard to the main processing surface, the side surfaces facing one another. The programmable arrangement may further include at least one second electrode and ion conducting material between each of the at least two first electrodes and the at least one second electrode, wherein the at least one second electrode is arranged partially between the side surfaces of the two first electrodes facing one another.
摘要翻译：本发明的实施例一般涉及集成电路，制造集成电路和存储器模块的方法。在本发明的实施例中，提供具有可编程布置的集成电路。可编程布置包括具有主处理表面的基板，至少两个第一电极，其中两个第一电极中的每一个具有相对于主处理表面相对于主处理表面相对的角度布置的侧表面。所述可编程布置还可以包括在所述至少两个第一电极和所述至少一个第二电极中的每一个之间的至少一个第二电极和离子传导材料，其中所述至少一个第二电极部分地布置在所述两个第一电极电极彼此面对。

16. 发明申请

US20090016096A1 Integrated Circuits; Method for Manufacturing an Integrated Circuit; Method for Decreasing the Influence of Magnetic Fields; Memory Module 失效
标题翻译：集成电路; 集成电路制造方法降低磁场影响的方法内存模块
公开(公告)号：US20090016096A1
公开(公告)日：2009-01-15
申请号：US11775599
申请日：2007-07-10
申请人： Rainer Leuschner , Ulrich Klostermann
发明人： Rainer Leuschner , Ulrich Klostermann
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction is provided. The magnetic tunnel junction may include a free layer with a magnetization orientation that is selected by the application of a write current through the magnetic tunnel junction, and a retention layer that retains the selectable magnetization orientation of the free layer at temperatures below a retention temperature.
摘要翻译：本发明的实施例一般涉及集成电路，集成电路的制造方法，减小磁场影响的方法以及存储器模块。在本发明的实施例中，提供了具有磁性隧道结的集成电路。磁性隧道结可以包括具有通过施加通过磁性隧道结的写入电流而选择的磁化取向的自由层，以及在低于保持温度的温度下保持自由层的可选磁化取向的保留层。

17. 发明授权

US07436700B2 MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same 失效
标题翻译：具有弱本征各向异性存储层的MRAM存储单元及其制造方法
公开(公告)号：US07436700B2
公开(公告)日：2008-10-14
申请号：US11769454
申请日：2007-06-27
申请人： Manfred Ruehrig , Joachim Wecker , Ulrich Klostermann
发明人： Manfred Ruehrig , Joachim Wecker , Ulrich Klostermann
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
摘要翻译：提供了具有由圆盘形层制成的层系统的MRAM存储单元。存储单元包括由非磁性中间层隔开的第一和第二磁性层。第一磁性层表现出硬磁性能并且用作参考层。第二磁性层表现出软磁性能并用作存储层。可以在存储层上设置反铁磁层。通过存储层的磁化状态存储信息。存储层具有限定磁性优选方向的弱本征各向异性。参考层的磁化方向平行于存储层内部的剩余磁化的磁化方向。作为施加具有垂直于存储层的固有各向异性的优选方向的场分量的外部磁场的结果，发生剩余磁化。

18. 发明授权

US07423282B2 Memory structure and method of manufacture 有权
标题翻译：内存结构和制造方法
公开(公告)号：US07423282B2
公开(公告)日：2008-09-09
申请号：US11483264
申请日：2006-07-06
申请人： Chanro Park , Wolfgang Raberg , Ulrich Klostermann
发明人： Chanro Park , Wolfgang Raberg , Ulrich Klostermann
IPC分类号： H01L29/04
CPC分类号： H01L45/142 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/146 , H01L45/1675
摘要： A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.
摘要翻译：固态电解质存储结构包括固态电解质层，固态电解质层上的金属层和金属层上的蚀刻停止层。

19. 发明申请

US20080002462A1 MRAM Memory Cell Having a Weak Intrinsic Anisotropic Storage Layer and Method of Producing the Same 失效
标题翻译：具有弱本征各向异性存储层的MRAM存储单元及其制造方法
公开(公告)号：US20080002462A1
公开(公告)日：2008-01-03
申请号：US11769454
申请日：2007-06-27
申请人： Manfred Ruehrig , Joachim Wecker , Ulrich Klostermann
发明人： Manfred Ruehrig , Joachim Wecker , Ulrich Klostermann
IPC分类号： G11C13/06
CPC分类号： G11C11/16
摘要： An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
摘要翻译：提供了具有由圆盘形层制成的层系统的MRAM存储单元。存储单元包括由非磁性中间层隔开的第一和第二磁性层。第一磁性层表现出硬磁性能并且用作参考层。第二磁性层表现出软磁性能并用作存储层。可以在存储层上设置反铁磁层。通过存储层的磁化状态存储信息。存储层具有限定磁性优选方向的弱本征各向异性。参考层的磁化方向平行于存储层内部的剩余磁化的磁化方向。作为施加具有垂直于存储层的固有各向异性的优选方向的场分量的外部磁场的结果，发生剩余磁化。

20. 发明授权

US07112861B2 Magnetic tunnel junction cap structure and method for forming the same 有权
标题翻译：磁隧道结盖结构及其形成方法
公开(公告)号：US07112861B2
公开(公告)日：2006-09-26
申请号：US10709573
申请日：2004-05-14
申请人： Sivananda K. Kanakasabapathy , David W. Abraham , Ulrich Klostermann
发明人： Sivananda K. Kanakasabapathy , David W. Abraham , Ulrich Klostermann
IPC分类号： G01R33/09
CPC分类号： H01L43/12
摘要： A a magnetic random access memory (MRAM) device includes a cap layer formed over a magnetic tunnel junction (MTJ) stack layer, an etch stop layer formed over the first cap layer, and a hardmask layer formed over the etch stop layer. The etch stop layer is selected from a material such that an etch chemistry used for removing the hardmask layer has selectivity against etching the etch stop layer material.
摘要翻译：磁性随机存取存储器（MRAM）器件包括形成在磁隧道结（MTJ）堆叠层上的覆盖层，形成在第一覆盖层上的蚀刻停止层，以及形成在蚀刻停止层上的硬掩模层。蚀刻停止层选自材料，使得用于去除硬掩模层的蚀刻化学性质对蚀刻停止层材料的蚀刻具有选择性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式