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11. 发明授权

US08110496B2 Method for performing chemical shrink process over BARC (bottom anti-reflective coating) 有权
标题翻译：在BARC（底部防反射涂层）上进行化学收缩工艺的方法
公开(公告)号：US08110496B2
公开(公告)日：2012-02-07
申请号：US11831137
申请日：2007-07-31
申请人： Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
发明人： Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
IPC分类号： B32B3/24 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31144 , H01L21/76816 , Y10T428/24322 , Y10T428/24331 , Y10T428/24521 , Y10T428/249953
摘要： A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
摘要翻译：一种结构及其形成方法。该方法包括提供一种结构，其包括（a）空穴层，（b）在空穴层顶部的BARC（底部抗反射涂层）层，和（c）在BARC层的顶部上的图案化光致抗蚀剂层，光刻胶孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层，以在孔层中形成孔。

12. 发明授权

US07493186B2 Method and algorithm for the control of critical dimensions in a thermal flow process 失效
标题翻译：用于控制热流过程中关键尺寸的方法和算法
公开(公告)号：US07493186B2
公开(公告)日：2009-02-17
申请号：US11613238
申请日：2006-12-20
申请人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
发明人： Colin J. Brodsky , Michael M. Crouse , Allen H. Gabor
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G03F7/70508 , G03F7/70558 , G03F7/70625 , G03F7/70875 , G05B2219/32182 , G05B2219/32187 , G05B2219/32188 , G05B2219/37224 , G05B2219/45028 , H01L22/12 , H01L22/20
摘要： A method of controlling one or more critical dimension (CD) features, dependent upon at least a first and a second processing parameter, with a single metrology step, while still enabling decoupled feedback to the first and the second processing parameter, includes an initial process characterization; producing a production piece; a single metrology step to determine the critical dimensions of the produced features; solving a system of equations simultaneously for individual feedback correction values for the first and second processing parameters; and applying the individual feedback correction values to their respective processing parameters.
摘要翻译：一种基于至少第一和第二处理参数的单个度量步骤来控制一个或多个关键维度（CD）特征的方法，同时仍然使能到第一和第二处理参数的解耦反馈，包括初始过程表征生产一块; 一个单一的度量步骤来确定所产生的特征的关键尺寸; 针对第一和第二处理参数的各个反馈校正值同时求解方程组; 以及将各个反馈校正值应用于它们各自的处理参数。

13. 发明授权

US07786017B1 Utilizing inverse reactive ion etching lag in double patterning contact formation 失效
标题翻译：在双重图案化接触形成中利用反向离子蚀刻滞后
公开(公告)号：US07786017B1
公开(公告)日：2010-08-31
申请号：US12561612
申请日：2009-09-17
申请人： Bradley J. Morgenfeld , Scott D. Allen , Colin J. Brodsky , Wai-Kin Li
发明人： Bradley J. Morgenfeld , Scott D. Allen , Colin J. Brodsky , Wai-Kin Li
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/76816
摘要： Solutions for solutions for utilizing Inverse Reactive Ion Etching lag in double patterning contact formation are disclosed. In one embodiment, a method includes providing a CMOS device including: an NMOS device having an NMOS gate and a PMOS device having a PMOS gate; a shallow trench isolation located between the NMOS device and the PMOS device; and an inter-level dielectric located over the NMOS device, the PMOS device and the shallow trench isolation; performing a double-patterning etch process on the CMOS device under conditions causing inverse reactive ion etching lag, the performing including forming a first opening, a second opening and a third opening, the second opening being wider than the first opening, and the third opening being contiguous with the second opening; and forming a first contact in the first opening and forming a second contact in both of the second opening and the third opening.
摘要翻译：公开了用于在双重图案化接触形成中利用反向离子蚀刻滞后的解决方案。在一个实施例中，一种方法包括提供CMOS器件，其包括：具有NMOS栅极和PMOS器件的NMOS器件，具有PMOS栅极; 位于NMOS器件和PMOS器件之间的浅沟槽隔离; 以及位于NMOS器件，PMOS器件和浅沟槽隔离之上的级间电介质; 在引起反向离子蚀刻滞后的条件下在CMOS器件上进行双图案化蚀刻工艺，其特征在于包括形成第一开口，第二开口和第三开口，第二开口比第一开口宽，第三开口与第二个开口连续; 以及在所述第一开口中形成第一触点并且在所述第二开口和所述第三开口中形成第二触点。

14. 发明申请

US20100173247A1 SUBSTRATE PLANARIZATION WITH IMPRINT MATERIALS AND PROCESSES 有权
标题翻译：基材平面化与印刷材料和工艺
公开(公告)号：US20100173247A1
公开(公告)日：2010-07-08
申请号：US12350250
申请日：2009-01-08
申请人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
发明人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
IPC分类号： G03F7/027 , G03F7/20 , G03F7/36
CPC分类号： G03F7/027 , G03F7/094 , G03F7/168
摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
摘要翻译：本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。在基板上形成平坦化组合物的平坦化层。平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。基本平坦的表面与平坦化层接触。平坦化层通过暴露于第一辐射或通过烘烤而固化。然后去除基本平坦的表面。在平坦化层上形成光致抗蚀剂层。将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。然后将浮雕图像转移到基底中。

15. 发明授权

US07132316B2 After deposition method of thinning film to reduce pinhole defects 失效
公开(公告)号：US07132316B2
公开(公告)日：2006-11-07
申请号：US11029812
申请日：2005-01-05
申请人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
发明人： Wai-Kin Li , Colin J. Brodsky , Steven A. Scheer
IPC分类号： H01L21/00 , H01L21/8238
CPC分类号： G03F7/11 , H01L21/312
摘要： A method of forming a thin film is provided in which a film having a first thickness is deposited over a substrate, wherein the first thickness is greater than a thickness at which the initially deposited film begins to dewet from the substrate. The initially deposited film is then stabilized to form a stabilized film. Thereafter, the stabilized film is then thinned to a second thickness, such that the resulting film now has a smaller thickness than the thickness at which the initially deposited film would begin to dewet from the substrate. However, as a result of the prior stabilization, the reduced thickness film remains free of dewetting defects.

16. 发明授权

US08582078B2 Test method for determining reticle transmission stability 失效
标题翻译：确定掩模传输稳定性的测试方法
公开(公告)号：US08582078B2
公开(公告)日：2013-11-12
申请号：US13098723
申请日：2011-05-02
申请人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
发明人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
IPC分类号： G03B27/52 , G03B27/32 , G03B27/68 , G03B27/62
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译：通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

17. 发明授权

US08084185B2 Substrate planarization with imprint materials and processes 有权
标题翻译：基板平面化与压印材料和工艺
公开(公告)号：US08084185B2
公开(公告)日：2011-12-27
申请号：US12350250
申请日：2009-01-08
申请人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
发明人： Sean D. Burns , Colin J. Brodsky , Ryan L. Burns
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/027 , G03F7/094 , G03F7/168
摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.
摘要翻译：本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。在基板上形成平坦化组合物的平坦化层。平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。基本平坦的表面与平坦化层接触。平坦化层通过暴露于第一辐射或通过烘烤而固化。然后去除基本平坦的表面。在平坦化层上形成光致抗蚀剂层。将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。然后将浮雕图像转移到基底中。

18. 发明授权

US08023102B2 Test method for determining reticle transmission stability 有权
标题翻译：确定掩模传输稳定性的测试方法
公开(公告)号：US08023102B2
公开(公告)日：2011-09-20
申请号：US12105311
申请日：2008-04-18
申请人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
发明人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
IPC分类号： G03B27/52 , G03B27/68 , G03B27/32
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译：通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

19. 发明授权

US07816069B2 Graded spin-on organic antireflective coating for photolithography 有权
标题翻译：梯度旋涂有机抗反射涂层用于光刻
公开(公告)号：US07816069B2
公开(公告)日：2010-10-19
申请号：US11473338
申请日：2006-06-23
申请人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
发明人： Colin J. Brodsky , Sean D. Burns , Dario L. Goldfarb , Michael Lercel , David R. Medeiros , Dirk Pfeiffer , Daniel P. Sanders , Steven A. Scheer , Libor Vyklicky
IPC分类号： G03F7/11 , G03C1/00 , C08L29/04 , C08L27/12
CPC分类号： G03F7/091 , Y10S438/952
摘要： An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.
摘要翻译：提供了包含至少两种聚合物组分并且包含发色团部分和透明部分的抗反射涂层。抗反射涂层可用于提供在光致抗蚀剂层下形成的单层复合渐变抗反射涂层。

20. 发明申请

US20090262317A1 TEST METHOD FOR DETERMINING RETICLE TRANSMISSION STABILITY 有权
标题翻译：用于确定传输稳定性的测试方法
公开(公告)号：US20090262317A1
公开(公告)日：2009-10-22
申请号：US12105311
申请日：2008-04-18
申请人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
发明人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
IPC分类号： G03B27/52 , G01N21/00
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译：通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

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