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11. 发明授权

US09299894B2 Wavelength converting substance, wavelength converting gel and light emitting device 有权
标题翻译：波长转换物质，波长转换凝胶和发光器件
公开(公告)号：US09299894B2
公开(公告)日：2016-03-29
申请号：US13904030
申请日：2013-05-29
申请人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
发明人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
IPC分类号： H01L33/50 , G02F1/355 , C09K11/70
CPC分类号： H01L33/502 , C09K11/706 , G02F1/3556 , H01L33/501 , H01L33/504 , Y02B20/181
摘要： A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
摘要翻译：波长转换物质由半导体材料制成。波长转换物质适用于吸收波长范围在300纳米到490纳米之间的激发光，并将激发光转换成波长范围在450纳米到750纳米之间的发射光。

12. 发明授权

US08766307B2 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US08766307B2
公开(公告)日：2014-07-01
申请号：US13778161
申请日：2013-02-27
申请人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
发明人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L2933/0091
摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.
摘要翻译：发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。钝化结构设置在外延衬底上并具有外表面。空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。半导体层设置在外延衬底上并封装钝化结构和空隙。第一类掺杂半导体层设置在半导体层上。发光层设置在第一型掺杂半导体层上。第二种掺杂半导体层设置在发光层上。

13. 发明申请

US20130037796A1 Light-Emitting Device and Method for Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130037796A1
公开(公告)日：2013-02-14
申请号：US13568399
申请日：2012-08-07
申请人： Jyun-De Wu , Yu-Chu Li
发明人： Jyun-De Wu , Yu-Chu Li
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , H01L33/42
摘要： A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
摘要翻译：发光装置包括第一包层，发光层，第二包层，包含含铟氧化物的外延结构和用于供给外部电力的电极单元。电极单元包括：第一电极，其设置成电连接到第一包层，以及第二电极，设置在外延结构上方，以通过外延结构电连接到第二包层，使得外部电被允许通过第一覆层传输到发光层和第二电极。还公开了一种制造发光器件的方法。

14. 发明授权

US08766293B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08766293B2
公开(公告)日：2014-07-01
申请号：US13568399
申请日：2012-08-07
申请人： Jyun-De Wu , Yu-Chu Li
发明人： Jyun-De Wu , Yu-Chu Li
IPC分类号： H01L29/205 , H01L33/00 , H01L21/00
CPC分类号： H01L33/02 , H01L33/42
摘要： A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
摘要翻译：发光装置包括第一包层，发光层，第二包层，包含含铟氧化物的外延结构和用于供给外部电力的电极单元。电极单元包括：第一电极，其设置成电连接到第一包层，以及第二电极，设置在外延结构上方，以通过外延结构电连接到第二包层，使得外部电被允许通过第一覆层传输到发光层和第二电极。还公开了一种制造发光器件的方法。

15. 发明授权

US06470740B2 Low speed wind tunnel with adjustable moving boundary 失效
标题翻译：低速风洞，可移动边界可调
公开(公告)号：US06470740B2
公开(公告)日：2002-10-29
申请号：US09749761
申请日：2000-12-28
申请人： Yu-Chu Li
发明人： Yu-Chu Li
IPC分类号： G01M902
CPC分类号： G01M9/04 , G01M9/02
摘要： A low speed wind tunnel with an adjustable moving boundary is disclosed. The wind tunnel comprises a wind tunnel test section having at least one movable wall installed therein. The movable wall is capable of moving with the same direction and speed of the air flow. The movable wall may be a roller tread or a roller belt. A nested filter is installed at an inlet site of the air flow for regulating a source air flow into an evenly distributed flow field which is then sent to the wind tunnel test section. The nested filter includes a plurality of nested units arranged in order. Each nested unit has an air flow cross. section adjustable structure for varying the cross section area of the air flow passing through the wind tunnel test section, thereby adjusting the speed of the air flow. The movable wall may be designed to be an adaptive boundary for corresponding with different shapes of objects under test located in the wind tunnel test section.
摘要翻译：公开了一种具有可调移动边界的低速风洞。风洞包括一个风洞测试部分，其中安装有至少一个活动壁。可动壁能够以相同的空气流动方向和速度移动。可移动壁可以是辊子胎面或辊子带。在空气流的入口处安装嵌套过滤器，用于将源空气流调节到均匀分布的流场中，然后将其传送到风洞测试部分。嵌套的过滤器包括按顺序布置的多个嵌套单元。每个嵌套单元都有一个气流交叉。用于改变通过风洞试验段的空气流的横截面积，从而调节气流的速度。可动壁可以被设计为适应边界，用于对应于位于风洞测试部分中的被测物体的不同形状。

16. 发明授权

US06672372B1 Hydrogen storage device for avoiding powder dispersion 有权
标题翻译：用于避免粉末分散的储氢装置
公开(公告)号：US06672372B1
公开(公告)日：2004-01-06
申请号：US10294589
申请日：2002-11-15
申请人： Yu-Chu Li , Shih-Ming Lee , Jenn-Chen Tang
发明人： Yu-Chu Li , Shih-Ming Lee , Jenn-Chen Tang
IPC分类号： F28D1500
CPC分类号： F17C11/005 , Y02E60/321 , Y02P90/45
摘要： A hydrogen storage device for avoiding powder dispersion, having a magnetic hydrogen-absorbing material, prevents powder, generated as the hydrogen-absorbing material releases and absorbs hydrogen, from clogging pipelines, a design that can increase the gas flux and work efficiency, thus extending the device lifetime; a magnetic component having a strong magnetic field is further included to keep the magnetic property of the hydrogen-absorbing material, thus the magnetic strength of the hydrogen-absorbing material will not reduce due to the repeated residual stress actions.
摘要翻译：一种用于避免粉末分散的储氢装置，具有吸磁材料，可防止吸收吸收材料释放和吸收氢气而产生的粉末堵塞管道，可提高气体通量和工作效率的设计，从而延长器件寿命; 还包括具有强磁场的磁性部件以保持吸氢材料的磁性，因此由于重复的残余应力作用，吸氢材料的磁强度不会降低。

17. 发明申请

US20150179874A1 LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构
公开(公告)号：US20150179874A1
公开(公告)日：2015-06-25
申请号：US14257012
申请日：2014-04-21
申请人： Yu-Chu Li
发明人： Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02
摘要： A light emitting diode (LED) structure includes a substrate, a N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The N-type semiconductor layer is disposed on the substrate. The light emitting layer is adapted to emit a light with dominant wavelength between 365 nm and 490 nm and disposed on the N-type semiconductor layer. The P-type semiconductor layer is disposed on the blue light emitting layer and includes a P—AlGaN layer. A thickness of the P—AlGaN layer is more than 85% a thickness of the P-type semiconductor layer.
摘要翻译：发光二极管（LED）结构包括衬底，N型半导体层，发光层和P型半导体层。 N型半导体层设置在基板上。发光层适于发射主波长在365nm和490nm之间的光并且设置在N型半导体层上。 P型半导体层设置在蓝色发光层上，并且包括P-AlGaN层。 P型AlGaN层的厚度大于P型半导体层的厚度的85％以上。

18. 发明申请

US20140131751A1 WAVELENGTH CONVERTING SUBSTANCE, WAVELENGTH CONVERTING GEL AND LIGHT EMITTING DEVICE 有权
标题翻译：波长转换物质，波长转换凝胶和发光装置
公开(公告)号：US20140131751A1
公开(公告)日：2014-05-15
申请号：US13904030
申请日：2013-05-29
申请人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
发明人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
IPC分类号： H01L33/50
CPC分类号： H01L33/502 , C09K11/706 , G02F1/3556 , H01L33/501 , H01L33/504 , Y02B20/181
摘要： A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
摘要翻译：波长转换物质由半导体材料制成。波长转换物质适用于吸收波长范围在300纳米到490纳米之间的激发光，并将激发光转换成波长范围在450纳米到750纳米之间的发射光。

19. 发明申请

US20130277697A1 LIGHT EMITTING DIODE DEVICE 有权
标题翻译：发光二极管装置
公开(公告)号：US20130277697A1
公开(公告)日：2013-10-24
申请号：US13778161
申请日：2013-02-27
申请人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
发明人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L2933/0091
摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.
摘要翻译：发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。钝化结构设置在外延衬底上并具有外表面。空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。半导体层设置在外延衬底上并封装钝化结构和空隙。第一类掺杂半导体层设置在半导体层上。发光层设置在第一型掺杂半导体层上。第二种掺杂半导体层设置在发光层上。

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