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11. 发明申请

US20090206737A1 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US20090206737A1
公开(公告)日：2009-08-20
申请号：US12322039
申请日：2009-01-27
申请人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
发明人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01L33/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , H01L27/3265 , H01L27/3269 , H01L29/04
摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.
摘要翻译：本发明公开了一种包括基板的有机电致发光器件。衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

12. 发明申请

US20070159442A1 ANALOG OUTPUT BUFFER CIRCUIT FOR FLAT PANEL DISPLAY 有权
标题翻译：用于平板显示的模拟输出缓冲电路
公开(公告)号：US20070159442A1
公开(公告)日：2007-07-12
申请号：US11306813
申请日：2006-01-12
申请人： Huang-Chung Cheng , Ya-Hsiang Tai , Bo-Ting Chen , Chun-Hsiang Fang
发明人： Huang-Chung Cheng , Ya-Hsiang Tai , Bo-Ting Chen , Chun-Hsiang Fang
IPC分类号： G09G3/36
CPC分类号： G09G3/3685 , G09G3/20 , G09G2310/0291 , G09G2310/08 , G09G2320/02
摘要： An analog output buffer circuit for a flat panel display is provided for improving an output signal distortion. The circuit includes a transistor, a current source, an input capacitor, an upper switch, a lower switch, a first switch, a second switch and a third switch. In which, the transistor and the current source are electrically connected in series between a first power supply and a second power supply. The current source provides a compensatory current for the transistor when a leakage current occurs. The upper switch and the first switch are turned on during the first period, and the lower switch and the second switch are turn on during the second period, in which the second period is after the first period. Those switches eliminate the drawback of different voltage levels between the input signal and the output signal obtained from the output buffer circuit inputted by the input signal.
摘要翻译：提供了一种用于平板显示器的模拟输出缓冲电路，用于改善输出信号失真。电路包括晶体管，电流源，输入电容器，上开关，下开关，第一开关，第二开关和第三开关。其中，晶体管和电流源串联电连接在第一电源和第二电源之间。当发生漏电流时，电流源为晶体管提供补偿电流。上部开关和第一开关在第一时段期间导通，并且下部开关和第二开关在第二时段期间接通，其中第二周期在第一周期之后。这些开关消除了输入信号与从输入信号输入的输出缓冲电路获得的输出信号之间的不同电压电平的缺点。

13. 发明申请

US20070054442A1 Method for manufacturing thin film transistor, thin film transistor and pixel structure 审中-公开
标题翻译：制造薄膜晶体管，薄膜晶体管和像素结构的方法
公开(公告)号：US20070054442A1
公开(公告)日：2007-03-08
申请号：US11223659
申请日：2005-09-08
申请人： Po-Chih Liu , Chun-Hsiang Fang , Ming-Che Ho , Chia-Chien Lu
发明人： Po-Chih Liu , Chun-Hsiang Fang , Ming-Che Ho , Chia-Chien Lu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/458 , H01L29/665 , H01L29/66757 , H01L29/78675
摘要： A method for manufacturing a thin film transistor is provided. First, a poly-silicon island is formed on a substrate. Then, a patterned gate dielectric layer and a gate are formed on the poly-silicon island. Next, a source/drain is formed in the poly-silicon island beside the gate, wherein the region between the source/drain is a channel. Furthermore, a metal layer is formed on the substrate to cover the gate, the patterned gate dielectric layer and the poly-silicon island. Moreover, the metal layer above the source/drain will react with the poly-silicon island to form a silicide layer. Then, the non-reacted metal layer is removed. Afterwards, an inter-layer dielectric (ILD) is formed to cover the substrate. Then, the inter-layer dielectric above the source/drain is removed to form a source/drain contacting hole, wherein the silicide layer is used as an etching stopper.
摘要翻译：提供了制造薄膜晶体管的方法。首先，在基板上形成多晶硅岛。然后，在多晶硅岛上形成图案化的栅介质层和栅极。接下来，在栅极旁边的多晶硅岛中形成源极/漏极，其中源极/漏极之间的区域是沟道。此外，在基板上形成金属层以覆盖栅极，图案化栅介质层和多晶硅岛。此外，源极/漏极之上的金属层将与多晶硅岛反应形成硅化物层。然后，除去未反应的金属层。之后，形成层间电介质（ILD）以覆盖基板。然后，除去源极/漏极之上的层间电介质以形成源极/漏极接触孔，其中硅化物层用作蚀刻停止层。

14. 发明申请

US20130115426A1 METHOD OF MANUFACTURING FLEXIBLE ELECTRONIC DEVICE 审中-公开
标题翻译：制造柔性电子器件的方法
公开(公告)号：US20130115426A1
公开(公告)日：2013-05-09
申请号：US13292599
申请日：2011-11-09
申请人： Chun-Hsiang Fang , Yu-Ling Lin
发明人： Chun-Hsiang Fang , Yu-Ling Lin
IPC分类号： B32B3/00 , B05D5/12 , G03F7/20 , C23C16/44 , H05K3/00 , B05D3/02 , B05D5/00 , C23C14/34
CPC分类号： H01L27/1266 , Y10T29/4913
摘要： A method for manufacturing a flexible electronic device includes forming a first layer on a substrate to define a first area and a second area surrounding the first area such that the substrate is exposed at least partially in the first area and the first layer is in the second area, forming a second layer on the first area and the first layer over the second area such that an adhesion force between the second layer and the substrate in the first area is weaker than that between the second and first layers in the second area, forming an electronic device layer (EDL) on the second layer over the first area, the EDL defining a boundary projectively within the first area, and separating the EDL from the substrate by cutting through the first and second layers along a contour within the first area but not less than the boundary.
摘要翻译：一种用于制造柔性电子器件的方法包括在衬底上形成第一层以限定第一区域和围绕第一区域的第二区域，使得衬底至少部分地暴露在第一区域中，并且第一层处于第二区域中区域，在所述第一区域上形成第二层，在所述第二区域上形成所述第一层，使得所述第一区域中的所述第二层和所述衬底之间的粘附力弱于所述第二区域中的所述第二层和所述第一层之间的粘附力，形成在所述第一区域上的所述第二层上的电子器件层（EDL），所述EDL在所述第一区域内投影地界定边界，以及沿着所述第一区域内的轮廓切割所述第一层和所述第二层，不小于边界。

15. 发明授权

US08436819B2 Flexible touch display apparatus 有权
标题翻译：柔性触摸显示装置
公开(公告)号：US08436819B2
公开(公告)日：2013-05-07
申请号：US12609812
申请日：2009-10-30
申请人： Wan-Ting Huang , Chun-Hsiang Fang , Chung-Chun Lee
发明人： Wan-Ting Huang , Chun-Hsiang Fang , Chung-Chun Lee
IPC分类号： G06F3/041 , G09G3/38
CPC分类号： G06F3/041 , G02F1/133305 , G02F1/13338 , G02F1/167 , G09G3/3208
摘要： A flexible touch display apparatus includes a flexible substrate, a display unit, a flexible insulation layer and a touch sensor layer. The display unit is disposed on the flexible substrate, the flexible insulation layer is disposed on the display unit, and the touch sensor layer is formed on the flexible insulation layer. The flexible touch display apparatus is light in weight, thin in thickness, flexible and unbreakable.
摘要翻译：柔性触摸显示装置包括柔性基板，显示单元，柔性绝缘层和触摸传感器层。显示单元设置在柔性基板上，柔性绝缘层设置在显示单元上，并且触摸传感器层形成在柔性绝缘层上。柔性触摸显示装置重量轻，厚度薄，柔软牢固。

16. 发明申请

US20120032582A1 ORGANIC ELECTROLUMINESCENT DISPLAY UNIT AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：有机电致发光显示单元及其制造方法
公开(公告)号：US20120032582A1
公开(公告)日：2012-02-09
申请号：US12907033
申请日：2010-10-19
申请人： Ting-Kuo Chang , Chun-Hsiang Fang
发明人： Ting-Kuo Chang , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L27/3269
摘要： An organic electroluminescent display unit including at least one transistor electrically connected to a scan line and a data line; a first photo-sensor including a first reflective bottom electrode, a first photo-sensitive layer and a first transparent top electrode; a second photo-sensor including a second reflective bottom electrode, a second photo-sensitive layer and a second transparent top electrode, the first photo-sensor being electrically connected to the second photo-sensor; a reflective conductive layer including a pixel electrode, a light-shielding pattern, and a connection pattern, the pixel electrode being electrically connected to the transistor, the light-shielding pattern being electrically connected to the second transparent top electrode and entirely covered the second photo-sensitive layer, and the connection pattern electrically connected to the first transparent top electrode, the first reflective bottom electrode, and the second reflective bottom electrode; an organic electroluminescent layer; and a cathode layer.
摘要翻译：一种有机电致发光显示单元，包括电连接到扫描线和数据线的至少一个晶体管; 包括第一反射底电极，第一光敏层和第一透明顶电极的第一光传感器; 第二光传感器，包括第二反射底电极，第二光敏层和第二透明顶电极，第一光传感器电连接到第二光传感器; 包括像素电极，遮光图案和连接图案的反射导电层，所述像素电极电连接到所述晶体管，所述遮光图案电连接到所述第二透明顶部电极并且完全覆盖所述第二照片电连接到第一透明顶电极，第一反射底电极和第二反射底电极的连接图案; 有机电致发光层; 和阴极层。

17. 发明授权

US07897445B2 Fabrication methods for self-aligned LDD thin-film transistor 有权
标题翻译：自对准LDD薄膜晶体管的制造方法
公开(公告)号：US07897445B2
公开(公告)日：2011-03-01
申请号：US11709480
申请日：2007-02-21
申请人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
发明人： Shih Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai , Chang-Ho Tseng
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.
摘要翻译：自对准LDD TFT及其制造方法。该方法包括提供半导体层。第一掩模层设置在半导体层的第一区域上，所述第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。半导体层被包括第一掩模层覆盖的第一区域暴露于掺杂剂，其中由第一掩模层覆盖的第一区域与未被第一掩模层覆盖的第二区域相比，轻掺杂掺杂剂。

18. 发明授权

US07388265B2 Thin film transistor and fabrication method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07388265B2
公开(公告)日：2008-06-17
申请号：US11598844
申请日：2006-11-13
申请人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
发明人： Shih-Chang Chang , De-Hua Deng , Chun-Hsiang Fang , Yaw-Ming Tsai
IPC分类号： H01L29/76
CPC分类号： H01L27/1214 , H01L27/127 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645
摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.
摘要翻译：具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。屏蔽区域比扩展区域厚。形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

19. 发明授权

US08390188B2 Light emitting unit of electroluminescence device capable of increasing aperture rate manufacturing method thereof 有权
标题翻译：能够提高孔径率制造方法的电致发光元件的发光单元
公开(公告)号：US08390188B2
公开(公告)日：2013-03-05
申请号：US12961510
申请日：2010-12-07
申请人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
发明人： Hui-Jun Wang , Chieh-Wei Chen , Chun-Hsiang Fang
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L51/5206 , H01L27/329 , H01L2251/5346 , H01L2251/5392 , H01L2251/55
摘要： A light emitting unit of an electroluminescence device and a manufacturing method thereof are provided. The light emitting unit of the electroluminescence device includes a power line, a first electrode layer, a light emitting layer and a second electrode layer. The power line is on a substrate. The first electrode layer is disposed on the substrate and is electrically connected to the power line. In particular, a top portion of the first electrode layer has an oxygen concentration higher than that of a bottom portion of the first electrode layer. The light emitting layer is disposed on the first electrode layer and the second electrode layer is disposed on the light emitting layer.
摘要翻译：提供了一种电致发光器件的发光单元及其制造方法。电致发光器件的发光单元包括电源线，第一电极层，发光层和第二电极层。电源线在基板上。第一电极层设置在基板上并电连接到电力线。特别地，第一电极层的顶部的氧浓度高于第一电极层的底部的氧浓度。发光层设置在第一电极层上，第二电极层设置在发光层上。

20. 发明授权

US08299471B2 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US08299471B2
公开(公告)日：2012-10-30
申请号：US12322039
申请日：2009-01-27
申请人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
发明人： Hanson Liu , Ryan Lee , Chun-Hsiang Fang
IPC分类号： H01L27/14 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , H01L27/3265 , H01L27/3269 , H01L29/04
摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.
摘要翻译：本发明公开了一种包括基板的有机电致发光器件。衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

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